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MRF21010LR1 MRF21010LSR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
•Typical W--CDMA Performance: --45 dBc ACPR, 2140 MHz, 28 Volts,
5 MHz Offset/4.096 MHz BW, 15 DTCH
Output Power — 2.1 Watts
Power Gain — 13.5 dB
Efficiency — 21%
•Capable of Handling 10:1 VSWR @ 28 Vdc, 2140 MHz,
10 Watts CW Output Power
Features
•High Gain, High Efficiency and High Linearity
•Integrated ESD Protection
•Designed for Maximum Gain and Insertion Phase Flatness
•Excellent Thermal Stability
•Characterized with Series Equivalent Large--Signal Impedance Parameters
•Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
•RoHS Compliant.
•In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
--0.5, +65 Vdc
Gate--Source Voltage V
GS
-- 0.5, +15 Vdc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
43.75
0.25
W
W/°C
Storage Temperature Range T
stg
-- 65 to +150 °C
Case Operating Temperature T
C
150 °C
Operating Junction Temperature T
J
200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case R
θJC
5.5 °C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M1 (Minimum)
Document Number: MRF21010
Rev. 9, 5/2006
Freescale Semiconductor
Technical Data
2110--2170 MHz, 10 W, 28 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B--05, STYLE 1
NI--360
MRF21010LR1
MRF21010LR1
MRF21010LSR1
CASE 360C--05, STYLE 1
NI--360S
MRF21010LSR1
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
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2
RF Device Data
Freescale Semiconductor
MRF21010LR1 MRF21010LSR1
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=10 µA)
V
(BR)DSS
65 — — Vdc
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 10 µAdc
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
— — 1 µAdc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 50 µA)
V
GS(th)
2.5 3 4 Vdc
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 100 mA)
V
GS(Q)
2.5 4 4.5 Vdc
Drain--Source On--Voltage
(V
GS
= 10 V, I
D
= 0.5 A)
V
DS(on)
— 0.4 0.5 Vdc
Forward Transconductance
(V
DS
= 10 V, I
D
= 1 A)
g
fs
— 0.95 — S
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
— 1 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two--Tone Common Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 10 W PEP, I
DQ
= 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
G
ps
12 13.5 — dB
Two--Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 10 W PEP, I
DQ
= 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
η31 35 — %
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 10 W PEP, I
DQ
= 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
IMD — --35 --30 dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 10 W PEP, I
DQ
= 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
IRL — --12 --10 dB
Output Power, 1 dB Compression Point, CW
(V
DD
= 28 Vdc, I
DQ
= 100 mA, f = 2170 MHz)
P1dB — 11 — W
Common--Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 10 W CW, I
DQ
= 100 mA,
f = 2170 MHz)
G
ps
— 12 — dB
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 10 W CW, I
DQ
= 100 mA,
f = 2170 MHz)
η— 42 — %
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MRF21010LR1 MRF21010LSR1
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF21010L Test Circuit Schematic
RF
INPUT
RF
OUTPUT
Z1
V
GG
C2
C10
C3
+
DUT
V
DD
Z6 0.453″x 1.118″Microstrip
Z7 0.921″x 0.154″Microstrip
Z8 0.925″x 0.087″Microstrip
PCB Taconic TLX8--0300, 0.030″,
ε
r
= 2.55
Z2
C8C7
Z6 Z7
C6
Z4
R2
C4
C1
Z3
Z8
+
C9
+
R1
C5
Z5
Z1 0.964″x 0.087″Microstrip
Z2 0.905″x 0.087″Microstrip
Z3 0.433″x 0.512″Microstrip
Z4 1.068″x 0.087″Microstrip
Z5 0.752″x 0.087″Microstrip
Table 5. MRF21010L Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 * (eared) 2.2 pF Chip Capacitor 100B2R2BW ATC
(earless) 1.8 pF Chip Capacitor 100B1R8BW ATC
C2 0.5 pF Chip Capacitor 100B0R5BW ATC
C3, C9 10 µF, 35 V Tantalum Chip Capacitors 293D106X9035D2T Sprague--Vishay
C4, C7 1 nF Chip Capacitors 100B102JW ATC
C5, C6 5.6 pF Chip Capacitors 100B5R6BW ATC
C8 470 µF, 63 V Electrolytic Capacitor
C10 10 pF Chip Capacitor 100B100GW ATC
N1, N2 Type N Connector Flange Mounts 3052--1648--10 Macom
R1 1.0 kΩChip Resistor (0805)
R2 12 ΩChip Resistor (0805)
* Piece part depending on eared / earless version of the device.
Figure 2. MRF21010L Test Circuit Component Layout
RF Output
C2
C1
C3
C4 C5
R1
R2 C6 C7
C8
C9
C10
CUTOUT AREA
VGG VDD
RF Input
C--XM--00--001--01
MRF21010
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes
will have no impact on form, fit or function of the current product.
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4
RF Device Data
Freescale Semiconductor
MRF21010LR1 MRF21010LSR1
VDD
VGG
C--XM--99--001--01
C1 R1
T1
R2
R3
P1
T2
C8
C9
R4
C2
C3 R5
C4 C5
L1 L2 L3 L4
C7
L5
R6
C10
Ground
C6
MRF21010
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes
will have no impact on form, fit or function of the current product.
Figure 3. MRF21010L Demonstration Board Component Layout
Table 6. MRF21010L Demonstration Board Component Designations and Values
Designators Description
C1 1F Chip Capacitor (0805), AVX #08053G105ZATEA
C2, C6 10 F, 35 V Tantalum Capacitors, Vishay--Sprague #293D106X9035D
C3, C4 6.8 pF Chip Capacitors, ACCU--P (0805), AVX #08051J6R8CBT
C5 10 nF Chip Capacitor (0805), AVX #08055C103KATDA
C7 1.5 pF Chip Capacitor, ACCU--P (0805), AVX #08051J2R2BBT
C8, C10 0.5 pF Chip Capacitors, ACCU--P (0805), AVX #08051J0R5BBT
C9 10 pF Chip Capacitor, ACCU--P (0805), AVX #08055J100GBT
L1 19 mm ×1.07 mm
L2 7.7 mm ×13.8 mm
L3 9.3 mm ×22 mm
L4 17.7 mm ×3.5 mm
L5 3.4 mm ×1.5 mm
R1, R6 10 Ω, 1/8 W Chip Resistors (0805)
R2, R3 1 kΩ, 1/8 W Chip Resistors (0805)
R4 2.2 kΩ, 1/8 W Chip Resistor (0805)
R5 0Ω, 1/8 W Chip Resistor (0805)
P1 5 kΩPotentiometer CMS Cermet Multi--Turn, Bourns #3224W
T1 Voltage Regulator, Micro--8, #LP2951
T2 Bipolar NPN Transistor, SOT--23, #BC847
PCB Rogers RO4350, 0.5 mm, ε
r
= 3.53
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MRF21010LR1 MRF21010LSR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 4. Class AB Broadband Circuit Performance
f, FREQUENCY (MHz)
Figure 5. W--CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
Figure 6. Intermodulation Distortion versus
Output Power
V
DD
, DRAIN VOLTAGE (VOLTS)
12
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) PEP
100
22
2000
--45
--25
13
2140
--55
32
101
--60
2280
15
0
40
10
5
15
20
--35
Figure 9. Intermodulation and Gain versus Supply
Voltage
P
out
, OUTPUT POWER (WATTS) PEP
13.5
14.5
0.1
13.0
12.0
14.0
IMD
V
DD
= 28 Vdc, P
out
= 10 W (PEP), I
DQ
= 100 mA
Two Tone Measurement, 100 kHz Tone Spacing
IMD, INTERMODULATION DISTORTION (dBc)
Gps , POWER GAIN (dB)
10 100
V
DD
= 28 Vdc, f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
--50
--40
150 mA
130 mA
100 mA
80 mA
--30
V
DD
= 28 Vdc, f = 2140 MHz
Two Tone Measurement,
100 kHz Tone Spacing
100 mA
150 mA
130 mA
80 mA
26 28 30
14
--42
--38
--34
--30
, DRAIN EFFICIENCY (%),ηGps , POWER GAIN (dB)
2080 2110 22002170
25
30
35
--40
--35
--30
--25
--20
--15
--10
--5
0
IMD
IRL
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
G
ps
η
G
ps
, DRAIN EFFICIENCY (%),ηGps , POWER GAIN (dB)
3
P
out
, OUTPUT POWER (WATTS Avg.) W--CDMA
30
20
1 2 3.5
25
5
10
--60
--20
--40
η
V
DD
= 28 Vdc, I
DQ
= 130 mA, f = 2140 MHz
Channel Spacing 5 MHz, BW 4.096 MHz
(15 Channels)
2.50.5 1.5
--50
G
ps
ACPR
ACPR, ADJACENT CHANNEL POWER RATIO (dB)
15
--30
--10
0.1
P
out
, OUTPUT POWER (WATTS) PEP
100
--45
--25
--55
101
--60
--35
IMD, INTERMODULATION DISTORTION (dBc)
--50
--40
--30
V
DD
= 28 Vdc, I
DQ
= 100 mA, f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing 3rd Order
7th Order
5th Order
0.1
--65
--70
--20
1
12.5
IMD, INTERMODULATION DISTORTION (dBc)
Gps , POWER GAIN (dB)
--40
--36
--32
P
out
= 10 W (PEP), I
DQ
= 100 mA, f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
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6
RF Device Data
Freescale Semiconductor
MRF21010LR1 MRF21010LSR1
f
MHz
Z
source
Ω
Z
load
Ω
1990
2110
2230
2.85 -- j4.38
2.73 -- j6.19
2.89 -- j5.04
2.93 -- j1.71
2.76 -- j2.28
2.83 -- j2.59
V
DD
= 28 V, I
DQ
= 100 mA, P
out
= 10 W PEP
Figure 10. Series Equivalent Source and Load Impedance
Z
o
= 10 Ω
f = 1990 MHz
f = 2230 MHz
f = 1990 MHz
f = 2230 MHz
Z
source
Z
load
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
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MRF21010LR1 MRF21010LSR1
7
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 360B--05
ISSUE G
NI--360
MRF21010LR1
G
EC
SEATING
PLANE
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.795 0.805 20.19 20.45
INCHES
B0.225 0.235 5.72 5.97
C0.125 0.175 3.18 4.45
D0.210 0.220 5.33 5.59
E0.055 0.065 1.40 1.65
F0.004 0.006 0.10 0.15
G0.562 BSC 14.28 BSC
H0.077 0.087 1.96 2.21
K0.220 0.250 5.59 6.35
M0.355 0.365 9.02 9.27
Q0.125 0.135 3.18 3.43
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
2
3
Q
2X
M
A
M
aaa B
M
T
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R0.227 0.233 5.77 5.92
S0.225 0.235 5.72 5.97
N0.357 0.363 9.07 9.22
aaa 0.005 REF 0.13 REF
bbb 0.010 REF 0.25 REF
ccc 0.015 REF 0.38 REF
M
A
M
bbb B
M
T
D
2X
K
2X
B
B
(FLANGE)
HF
M
A
M
ccc B
M
T
M
A
M
bbb B
M
T
A
M
(INSULATOR)
A
T
N
(LID)
M
A
M
ccc B
M
T
R
(LID)
S
(INSULATOR)
M
A
M
aaa B
M
T
360C--05
ISSUE E
MRF21010LSR1
NI--360S
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.375 0.385 9.53 9.78
INCHES
B0.225 0.235 5.72 5.97
C0.105 0.155 2.67 3.94
D0.210 0.220 5.33 5.59
E0.035 0.045 0.89 1.14
F0.004 0.006 0.10 0.15
H0.057 1.45
K0.085 0.115 2.16 2.92
M0.355 0.365 9.02 9.27
E
C
SEATING
PLANE
2
0.067 1.70
1
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
S0.225 0.235 5.72 5.97
aaa 0.005 REF 0.13 REF
bbb 0.010 REF 0.25 REF
ccc 0.015 REF 0.38 REF
HF
M
A
M
ccc B
M
T
R
(LID)
S
(INSULATOR)
M
A
M
aaa B
M
T
M
A
M
bbb B
M
T
D
2X
B
B
(FLANGE)
M
A
M
ccc B
M
T
M
A
M
bbb B
M
T
M
(INSULATOR)
T
N
(LID)
A
(FLANGE)
A
K
2X
PIN 3
N0.357 0.363 9.07 9.22
R0.227 0.23 5.77 5.92
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8
RF Device Data
Freescale Semiconductor
MRF21010LR1 MRF21010LSR1
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
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All other product or service names are the property of their respective owners.
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Document Number: MRF21010
Rev. 9, 5/2006
