6MBP75JA120 - Fuji Electric

IGBT IPM R-series 1200V class 1200V / 75A 6 in one-package

6MBP75RJ120

Features

· Temperature protection provided by directly detecting the junction

temperature of the IGBTs

· Low power loss and soft switching

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in

built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Symbol Rating Unit

Min. Max.

Bus voltage DC

Surge

Short operating

Collector-Emitter voltage *1

Collector current DC

1ms

Duty=76.1% *2

Collector power dissipation One transistor *3

Supply voltage of Pre-Driver *4

Input signal voltage *5

Input signal current

Alarm signal voltage *6

Alarm signal current *7

Junction temperature

Operating case temperature

Storage temperature

Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)

Screw torque Terminal (M5)

Mounting (M5)

VDC

VDC(surge)

VSC

VCES

IC

ICP

-IC

PC

VCC

Vin

Iin

VALM

IALM

Tj

Topr

Tstg

Viso

Item

0

200

0

-

-0.5

-

-0.5

-

-20

-40

-

900

1000

800

1200

75

150

75

500

20

Vcc+0.5

3

Vcc

20

150

100

125

AC2500

3.5

V

A

W

V

mA

V

mA

°C

V

N·m

Inverter

Note

*1 : Vces shall be applied to the input voltage between terminal P and U or ‚u or W , N and U or V or W

*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.73/(75 x 3.0) x 100=76.1%

*3 : Pc=125°C/IGBT Rth(j-c)=125/0.25=500W [Inverter]

*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13

*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13.

*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.

*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.

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6MBP75RJ120 IGBT-IPM

Control circuit

Item Symbol Condition Min. Typ. Max. Unit

Supply current of P-line side pre-driver(one unit)

Supply current of N-line side pre-driver

Input signal threshold voltage (on/off)

Input zener voltage

Alarm signal hold time

Limiting Resistor for Alarm

Switching Trequency : 0 to 15kHz

Tc=-20 to 125°C Fig.7

ON

OFF

Rin=20k ohm

Tc=-20°C Fig.2

Tc=25°C Fig.2

Tc=125°C Fig.2

Iccp

ICCN

Vin(th)

VZ

tALM

RALM

-

1.00

1.25

-

1.1

-

1425

-

1.35

1.60

8.0

-

2.0

-

1500

18

65

1.70

1.95

-

4.0

1575

mA

V

ms

ohm

Protection Section ( Vcc=15V)

Turn-on time

Turn-off time

Reverse recovery time

ton VDC=600V,Tj=125°C

toff IC=75A Fig.1, Fig.6

trr VDC=600V, IF=75A Fig.1, Fig.6

Thermal characteristics( Tc=25°C)

Item Symbol Min. Typ. Max. Unit

Junction to Case thermal resistance *8

Case to fin thermal resistance with compound

Rth(j-c)

Rth(c-f)

- - 0.25

- - 0.73

- 0.05 -

°C/W

Inverter IGBT

FWD

Item Symbol Min. Typ. Max. Unit

DC Bus Voltage

Operating Supply Voltage of Pre-Driver

Screw torque (M5)

VDC

VCC

-

Recommendable value

Over Current Protection Level of Inverter circuit

Over Current Protection Delay time

SC Protection Delay time

IGBT Chip Over Heating

Protection Temperature Level

Over Heating Protection Hysteresis

Over Heating Protection

Protection Temperature Level

Over Heating Protection Hysteresis

Under Voltage Protection Level

Under Voltage Protection Hysteresis

Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)

Main circuit

Item Symbol Condition Min. Typ. Max. Unit

Collector current at off signal input

Collector-Emitter saturation voltage

Forward voltage of FWD

ICES

VCE(sat)

VF

VCE=1200V Vin terminal open.

Ic=75A

-Ic=75A

Terminal

Chip

Terminal

Chip

IOC

tDOC

tSC

TjOH

TjH

TcOH

TcH

VUV

VH

Tj=125°C

Tj=125°C Fig.4

Surface of IGBT chips

VDC=0V, IC=0A

CaseTemperature

113 - -

-10-

--12

150 -

-20 -

1 10 - 125

-20 -

11.0 - 12.5

0.2 0.5 -

A

µs

°C

V

Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)

Common mode rectangular noise

Common mode lightning surge

Pulse width 1µs, polarity ±,10minuets

Judge : no over-current, no miss operating

Rise time 1.2µs, Fall time 50µs

Interval 20s, 10 times

Judge : no over-current, no miss operating

±2.0 - -

±5.0 - -

Item Symbol Condition Min. Typ. Max. Unit

Item Condition Min. Typ. Max. Unit

kV

- - 800 V

13.5 15.0 16.5 V

2.5 - 3.0 Nm

Item Symbol Min. Typ. Max. Unit

Weight

Weight Wt - 450 - g

Inverter

- - 1.0 mA

- - 2.6 V

- 1.9 -

- - 3.0 V

- 2.3 -

1.2 - - µs

- - 3.6

- - 0.3

*8 : (For 1 device, Case is under the device)

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6MBP75RJ120 IGBT-IPM

Figure 1. Switching Time Waveform Definitions

Figure 2. Input/Output Timing Diagram

Figure.4 Definition of tsc

Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit

Figure 6. Switching Characteristics Test Circuit

Ic Ic

IALM

tsc

IALM IALM

Ic

Ic Ic

IALM

tsc

IALM IALM

Ic

/Vin

Vge (Inside IPM )

Faul t (I nsi de IP M )

/ALM

Gate Off

on

Gate On

2ms (typ.)

off

normal

tALMMax. tALM > Max.

off

Faul t : Over-c urrent ,Over -heat or Under-voltage

on

alarm

tALM > 123

/Vin

Vge (Inside IPM )

Faul t (I nsi de IP M )

/ALM

Gate Off

on

Gate On

2ms (typ.)

off

normal

tALMMax. tALM > Max.

off

Faul t : Over-c urrent ,Over -heat or Under-voltage

on

alarm

tALM > 123

On

ton

Vin

Ic

Vin(th)

50%

toff

10%

trr 90%

90%

On

ton

Vin

Ic

Vin(th)

50%

toff

10%

trr 90%

90%

Vin

DC

15V

DC

300V

N

+

L

IPM

Ic

P

HCPL-

4504

Vcc

GND N

+

IPM

P

-

20k

Vin

DC

15V

DC

300V

N

+

L

IPM

Ic

P

HCPL-

4504

Vcc

GND N

+

IPM

P

-

20k

AVcc

Vin

GND

Icc P

U

V

W

N

P.G

+8V

fsw

IPM

DC

15V

AVcc

Vin

GND

Icc P

U

V

W

N

P.G

+8V

fsw

IPM

DC

15V

VccU

DC

15V

+

IPM

P

U

V

W

N

20k VinU

GNDU

SW1

Vcc

DC

15V

20k VinX

GND

SW2

Cooling

Fin

Earth

AC200V

4700p Noise

CT

VccU

DC

15V

+

IPM

P

U

V

W

N

20k VinU

GNDU

SW1

Vcc

DC

15V

20k VinX

GND

SW2

Cooling

Fin

Earth

AC200V

4700p Noise

CT

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6MBP75RJ120 IGBT-IPM

Block diagram

Outline drawings, mm

Mass : 450g

Pre-drivers include following functions

1.Amplifier for driver

2.Short circuit protection

3.Under voltage lockout circuit

4.Over current protection

5.IGBT chip over heating protection

U

V

W

Vcc

VinX

GND

VinY

VinZ

ALM

B

N

VinDB

VccW

ALMW

GNDW

VccV

ALMV

GNDV

P

VccU

ALMU

GNDU

VinU

VinV

VinW

Pre - Driv er

Pre -Driver

Pre - Driv er

Vz

RALM 1.5k

RALM 1.5k Vz

Vz

RALM 1.5k

Over heating protect ion

circuit

NC

4

12

3

2

1

8

7

6

5

11

10

9

14

16

13

17

18

15

19

U

V

W

Vcc

VinX

GND

VinY

VinZ

ALM

B

N

VinDB

VccW

ALMW

GNDW

VccV

ALMV

GNDV

P

VccU

ALMU

GNDU

VinU

VinV

VinW

Pre - Driv er

Pre -Driver

Pre - Driv er

Vz

RALM 1.5k

RALM 1.5k Vz

Vz

RALM 1.5k

Over heating protect ion

circuit

NC

44

1212

33

22

11

88

77

66

55

1111

1010

99

1414

1616

1313

1717

1818

1515

1919

1

12.5

31

22 9

717

1.0

52.02.02.02.0

51.051.0

3.0

1

3.0

66.44

2

1210

6

10

6

10

6

6.0+

3.0-

0.1+

3.0-

17

0.1+

2.0-

5M-6

0.1+

3.0-

3.0

1

51.0

3.0

22

8

0.5 262624

0.5

2

10

17 20 20

74

88

3.22

13.8

95

109

B

U

V

W

N

P

4- 5

19- 0.5 2- 2.5

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

+

_

O

/

O

/

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IGBT-IPM

Characteristics

Control circuit characteristics (Respresentative)

6MBP75RJ120

0

10

20

30

40

50

0 5 10 15 20 25

P ower supply cur rent vs. Switching frequency

Tj=100°C

N-side

P-side

Pow er supp ly current : Icc (mA)

Sw itching frequency : fsw (kHz)

Vcc=13V

Vcc=15V

Vcc=17V

0

0.5

1

1.5

2

2.5

12 13 14 15 16 17 18

Input signal threshold voltage

vs. Power supply voltage

Input signal threshold voltage

Power supply voltage : Vcc (V)

Tj=25°C

Tj=125°C

} Vin(on)

} Vin(off)

: Vin(on),Vin(off) (V)

0

2

4

6

8

10

12

14

20 40 60 80 100 120 140

Under voltage v s. Junction te mperature

Un der v oltage : VU V T (V)

Junction temperature : Tj (°C)

0

0.2

0.4

0.6

0.8

1

20 40 60 80 100 120 140

Under v oltage hys terisis vs. Jnction temperature

Under voltage hysterisis : VH (V)

Junction temperature : Tj (°C)

0

0.5

1

1.5

2

2.5

3

12 13 14 15 16 17 18

Alarm hold time vs. Power supply voltage

Alarm hold time : tALM (mSec)

Power supply voltage : Vcc (V)

Tj=125°C

Tj=25°C

0

50

100

150

200

12 13 14 15 16 17 18

Over heating characteristics

TcO H,TjO H ,TcH,TjH vs. Vcc

Over he ating protection : T cO H,TjOH (°C)

Po wer supply voltage : Vcc (V)

TjOH

TcOH

TcH,TjH

OH hysterisis : TcH,TjH (°C)

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6MBP75RJ120 IGBT-IPM

Main circuit characteristics (Respresentative)

0

20

40

60

80

100

120

00.511.522.53

Coll ector cu rre nt vs . Co llector-Emitter voltag e

Tj=25°C(Chip)

Co llector Cur rent : Ic (A)

C olle ct or- Em itt er vo lta ge : V ce ( V)

Vcc=13V

Vcc=15V

Vcc=17V

0

20

40

60

80

100

120

00.511.522.53

Coll ector cu rre nt vs . Co llector-Emitter voltag e

Tj=25°C(Terminal)

Collector Current : Ic (A)

C olle ct or- Em itt er vo ltage : V ce ( V)

Vcc=13V

Vcc=15V

Vcc=17V

0

20

40

60

80

100

120

00.511.522.53

Vcc=13V

Vcc=15V

Vcc=17V

C ollector current vs. Collec to r-Emitter vol ta ge

Tj=125°C(Chip)

Collector Current : Ic (A)

C olle ct or- Em itt er vo lta ge : V ce ( V)

0

20

40

60

80

100

120

00.511.522.53

Vcc=13V

Vcc=15V

Vcc=17V

C ollector current vs. Collec to r-Emitter vol ta ge

Tj=125°C(Terminal)

Co llector Cur rent : Ic (A)

Co lle c t o r - Em itt er voltage : Vce ( V)

0

20

40

60

80

100

120

00.511.522.53

Forward c urrent vs. Forward v oltage

(Chip)

Forw ard Current : If (A)

Forward vo ltage : V f (V)

125°C 25°C

0

20

40

60

80

100

120

00.511.522.53

Forward c urrent vs. Forward v oltage

(Terminal)

Forward Current : If (A)

Forward vo ltage : V f (V)

125°C 25°C

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6MBP75RJ120 IGBT-IPM

0

5

10

15

20

25

30

35

0 20 40 60 80 100 120

S w it ching Loss vs . Co llector Cu rr ent

Edc=600V,Vcc=15V,Tj=25°C

Sw itch ing loss : Eon ,Eof f, Err ( m J /cycle)

Collector current : Ic (A)

Eon

Eoff

Err

0

5

10

15

20

25

30

35

0 20406080100120

Sw itching L oss vs. Collector Cur rent

Edc=600V,Vcc=15V,Tj=125°C

Eon

Eoff

Err

Sw it ching loss : Eon,Eoff, Er r ( mJ /c ycle)

Colle ctor current : Ic (A)

0.01

0.1

1

0.001 0.01 0.1 1

Transient thermal resistance

T hermal resistance : Rth(j-c) (°C/W)

P ulse width :Pw (sec)

FWD

IGBT

0

100

200

300

400

500

600

0 20 40 60 80 100 120 140 160

Power der ating fo r IGBT

(per dev ice)

Collecter Power D issipat ion : Pc (W)

Ca se Tem pe rature : Tc (°C)

0

25

50

75

100

125

150

175

200

0 20 40 60 80 100 120 140 160

Power derating for FWD

(per dev ice)

Collec ter P ow er Dissipatio n : Pc (W)

Ca se Tem pe rature : Tc (°C)

0

150

300

450

600

750

900

1050

0 200 400 600 800 1000 1200 1400

Reversed biased safe operating area

Vcc=15V,Tj 125°C

Coll ec to r c urren t : Ic (A )

Collector-Emitter voltage : Vce (V)

SCSOA

(non-repetitive pulse)

RBSOA

(Re petit ive pul se)

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6MBP75RJ120 IGBT-IPM

10

100

1000

10000

0 20 40 60 80 100 120

Switc hing time vs. Collector c urrent

Edc=600V,Vcc=15V,Tj=25°C

Sw itching time : ton,toff,tf (nSec)

Collec tor current : Ic (A)

toff

ton

tf

100

1000

10000

0 20 40 60 80 100 120

Switc hing time vs. Collector c urrent

Edc=600V,Vcc=15V,Tj=125°C

Switching tim e : ton,toff,tf (nSec)

Collec tor current : Ic (A)

toff

ton

tf

10

100

1000

0 20 40 60 80 100 120

R e ve r s e re covery c ha ra c teristics

trr,Irr vs. IF

Reve rse r ecovery curre nt : Irr(A)

Reverse recovery time : trr(nSec)

For w ard current : IF( A)

trr125°C

trr25°C

Irr125°C

Irr25°C

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