1N4003ST SILICON RECTIFIER DIODE
PRV : 200 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratin
at 25 °C ambient tem
erature unless otherwise s
ecifi
.
Sin
le
hase, half wave, 60 Hz, resistive or inductive loa
For ca
acitive load, derate current b
20
SYMBOL VALUE UNIT
Maximum Repetitive Peak Reverse Voltage VRRM 200 Volts
Maximum RMS Voltage VRMS 140 Volts
Maximum DC Blocking Voltage VDC 200 Volts
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75 °CIF(AV) 1.0 Amp.
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method) IFSM 30 Amps.
Maximum Forward Voltage at IF = 1.0 Amp. VF1.1 Volts
Maximum DC Reverse Current
at rated DC Blocking Voltage IR5.0 μA
Typical Junction Capacitance (Note1) CJ15 pF
Typical Thermal Resistance (Note2) RθJA 26 °C/W
Junction Temperature Range TJ - 65 to + 175 °C
Storage Temperature Range TSTG - 65 to + 175 °C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2 Rev. 02 : March 31, 2005
RATING
DO - 41
Dimensions in inches and
millimeters
1.00 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)