2SJ530(L), 2SJ530(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-655C (Z) 4th. Edition Mar. 2001 Features * Low on-resistance R DS(on) = 0.08 typ. * 4V gate drive devices. * High speed switching. Outline DPAK-2 4 4 D 1 2 G 1 2 S 3 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ530(L),2SJ530(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS -60 V Gate to source voltage VGSS 20 V Drain current ID -15 A -60 A -15 A -15 A 19 mJ 30 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Avalanche current Avalanche energy I AP Note1 Note3 EAR Note3 Note2 Channel dissipation Pch Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Note: 2 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2SJ530(L),2SJ530(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS -60 -- -- V I D = -10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100A, VDS = 0 Zero gate voltege drain current I DSS -- -- -10 A VDS = -60 V, VGS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16V, VDS = 0 Gate to source cutoff voltage VGS(off) -1.0 -- -2.0 V I D = -1mA, VDS = -10V Static drain to source on state RDS(on) -- 0.08 0.10 I D = -8A, VGS = -10V Note4 resistance RDS(on) -- 0.11 0.16 I D = -8A, VGS = -4V Note4 Forward transfer admittance |yfs| 6.5 11 -- S I D = -8A, VDS = -10V Note4 Input capacitance Ciss -- 850 -- pF VDS = -10V Output capacitance Coss -- 420 -- pF VGS = 0 Reverse transfer capacitance Crss -- 110 -- pF f = 1MHz Turn-on delay time t d(on) -- 12 -- ns VGS = -10V, ID = -8A Rise time tr -- 75 -- ns RL = 3.75 Turn-off delay time t d(off) -- 125 -- ns Fall time tf -- 75 -- ns Body-drain diode forward voltage VDF -- -1.1 -- V I F = -15A, VGS = 0 Body-drain diode reverse recovery time t rr -- 70 -- ns I F = -15A, VGS = 0 diF/ dt =50A/s Note: 4. Pulse test 3 2SJ530(L),2SJ530(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area -1000 40 I D (A) 30 -100 Drain Current Channel Dissipation Pch (W) -300 20 10 -30 -10 -3 -1 -0.3 -0.1 0 50 100 150 200 Typical Output Characteristics -16 -3 V VGS = -2.5 V 0 4 I D (A) -3.5 V -12 -4 -2 -4 -6 Drain to Source Voltage V -8 DS(V) Ta = 25 C -30 -100 (V) DS V DS = -10 V Pulse Test Pulse Test -5 V -8 =1 Typical Transfer Characteristics Drain Current Drain Current I D (A) -6 V PW -20 -4 V -10 V 10 0 1m s 0 Op s ms era tio (1 sh n( ot) Tc Operation in =2 5 this area is ) limited by R DS(on) DC -0.1 -0.3 -1 -3 -10 Drain to Source Voltage V Case Temperature Tc (C) -20 10 s -10 -16 -12 -8 Tc = 75 C -4 0 25 C -25 C -1 -2 -3 Gate to Source Voltage V -4 (V) GS -5 2SJ530(L),2SJ530(S) Body-Drain Diode Reverse Recovery Time 500 Typical Capacitance vs. Drain to Source Voltage 5000 Reverse Recovery Time trr (ns) VGS = 0 f = 1 MHz Capacitance C (pF) 200 100 50 20 10 5 -0.1 Ciss 1000 Coss 300 100 Crss 30 di / dt = 50 A / s VGS = 0, Ta = 25 C 10 -1 -10 -20 -0.3 -3 Reverse Drain Current I DR (A) 0 -4 -40 -60 -8 V GS V DS -12 V DD = -50 V -25 V -10 V -80 -100 0 8 32 16 24 Gate Charge Qg (nc) -40 -50 -16 -20 40 1000 300 Switching Time t (ns) I D = -15 A V GS (V) -20 -30 Switching Characteristics 0 Gate to Source Voltage V DS (V) Drain to Source Voltage V DD = -10 V -25 V -50 V -20 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 0 -10 V GS = -10 V, V DD = -30 V Pw = 5 s, duty < 1 % t d(off) 100 tf 30 tr t d(on) 10 3 1 -0.1 -0.3 -1 Drain Current -3 -10 -20 I D (A) 5 2SJ530(L),2SJ530(S) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy E AR (mJ) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) -20 Pulse Test -16 -12 -10 V -8 V GS = 0, 5 V -5 V -4 0 -0.4 -0.8 -1.2 Source to Drain Voltage -1.6 -2.0 20 I AP = -15 A V DD = -25 V duty < 0.1 % Rg > 50 W 16 12 8 4 0 25 V SD (V) 50 75 100 125 150 Channel Temperature Tch (C) Avalanche Test Circuit V DS Monitor Avalanche Waveform EAR = L 1 2 * L * I AP * 2 I AP Monitor VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin -15 V 50W 0 6 VDD 2SJ530(L),2SJ530(S) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance g s (t) 3 Tc = 25C D=1 1 0.5 0.3 0.2 0.1 0.05 0.1 q ch - c(t) = g s (t) * q ch - c q ch - c = 4.17 C/W, Tc = 25 C 0.02 e uls 1 0.0 0.03 PDM P ot D= h 1s PW T PW T 0.01 10 100 1m 10 m Pulse Width 100 m 1 PW (S) Switching Time Test Circuit Vout Monitor Vin Monitor 10 Waveform Vin 10% D.U.T. RL 90% Vin 50W -10 V V DD = -30 V 90% 90% Vout td(on) 10% 10% tr td(off) tf 7 2SJ530(L),2SJ530(S) Package Dimensions As of January, 2001 1.7 0.5 Unit: mm 2.3 0.2 0.55 0.1 4.7 0.5 1.2 0.3 16.2 0.5 1.15 0.1 0.8 0.1 (0.7) 3.1 0.5 5.5 0.5 6.5 0.5 5.4 0.5 0.55 0.1 0.55 0.1 2.29 0.5 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 8 DPAK (L)-(2) -- -- 0.42 g 2SJ530(L),2SJ530(S) As of January, 2001 2.3 0.2 0.55 0.1 (4.9) (5.3) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.7 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (S)-(1),(2) -- Conforms 0.28 g 9 2SJ530(L),2SJ530(S) As of January, 2001 (0.1) 2.3 0.2 0.55 0.1 (5.1) (5.1) (0.1) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.5 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 10 DPAK (S)-(3) -- Conforms 0.28 g 2SJ530(L),2SJ530(S) Cautions 1. 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