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© 2002
JUNCTION FIELD EFFECT TRANSISTOR
2SK3653
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No. D16293EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3653 is suitable for converter of ECM.
FEATURES
•Compact package
•High forward transfer admittance
1000
µ
S TYP. (IDSS = 100
µ
A)
1600
µ
S TYP. (IDSS = 200
µ
A)
•Includes diode and high resistance at G - S
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3653 3pinXSOF (0814)
ABSOLUTE MAX IMUM RATINGS (TA = 25°C)
Drain to Source Voltage Note1 VDSX 20 V
Gate to Drain Voltage VGDO –20 V
Drain Current ID10 mA
Gate Current IG10 mA
Total Power Dissipation Note2 PT80 mW
Junction Temperature Tj125 °C
Storage Temperature Tstg –55 to +125 °C
Notes 1. VGS = –1.0 V
2. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
PACKAGE DRAWING (Unit: mm)
0.3 ±0.05
1.2 ±0.1
MAX. 0.4
0.8 ±0.1
D
0.9
1.4 ±0.1
G
S
0~0.05
0.13+0.1
–0.05
0.2 +0.1
–0
EQUIVALENT CIRCUIT
Source
Gate
Drain
Data Sheet D16293EJ1V0DS
2
2SK3653
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERIST ICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Volt age Drai n Cut-off Current IDSS1 VDS = 2.0 V, VGS = 0 V 38 570
µ
A
Zero Gate Volt age Drai n Cut-off Current IDSS2 VDS = 5.0 V, VGS = 0 V 40 600
µ
A
Gate Cut-off Voltage VGS(off) VDS = 5.0 V, ID = 1.0
µ
A−0.1 −1.0 V
Forward Transfer Adm i t tance | yfs1 |V
DS = 5.0 V, ID = 30
µ
A, f = 1. 0 kHz 350
µ
S
Forward Transfer Adm i t tance | yfs2 |V
DS = 5.0 V, VGS = 0 V, f = 1.0 kHz 350
µ
S
Input Capac i t ance Ciss VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz 7.0 8.0 pF
Noise Vol t age NV See Test Ci rcuit 1.8 3.0
µ
V
IDSS RANK
MARKINGJ2J3J4J5J6J7
IDSS1 (
µ
A)
VDS = 2.0 V 38 to 65 56 to 105 85 to 170 140 to 280 185 to 425 280 to 570
NOISE VOLTAGE TEST CIRCUIT
NV (r.m.s)
R = 1 kΩ
C = 10 pF
+4.5 V
JIS A
Data Sheet D16293EJ1V0DS 3
2SK3653
TYPICAL CHARA CTERISTICS (TA = 25°C)
20 40 60 80 100 120 140 160
00
40
20
80
60
100
DERATING FACTOR OF
POWER DISSIPATION
TA - Ambient Temperature - ˚C
dT - Derating Factor - %
VGS - Gate to Source Voltage - V
IG - Gate Current - A
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
µ
0
10
20
30
−30
−40
−20
−10
40
−0.2−0.4−0.6−0.8−1.0 1.00.80.60.40.2
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - mA
−0.6 −0.4 −0.2 0 +0.2
0.2
0.6
0.4
0.8
1
V
DS
= 5.0 V
I
D
S
S
=
3
0
0
A
I
D
S
S
=
2
0
0
A
I
D
S
S
=
1
0
0
A
µ
µ
µ
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10 20 50 100
V
DS
- Drain to Source Voltage - V
C
iSS
- Input Capacitance - pF
10
20
50
100
1
2
5
152
V
DS
= 0 V
f = 1.0 MHz
GATE CUT-OFF VOLTAGE AND FORWARD
TRANSFER ADMITTANCE vs. ZERO-GATE
VOLTAGE DRAIN CURRENT CO-RELATION
Zero-Gate Voltage Drain Current - A
V
GS (off)
- Gate Cut-off Voltage - V
|y
fs
| - Forward Transfer Admittance - S
V
DS
= 5.0 V
1
0.5
0.2
0.1
0.05
0.02
10
20 50 100 200 500 1000
0.01
5
2
10
µ
V
GS (off)
|y
fs
|
µ
Data Sheet D16293EJ1V0DS
4
2SK3653
RANK: J2
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
150
200
250
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
50
01002468
−0.05 V
0.15 V
0.10 V
0.05 V
−0.10 V
V
GS
= 0 V −0.15 V
µ
RANK: J3
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
120
180
240
300
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
60
01002468
−0.05 V
0.15 V
0.10 V
0.05 V
−0.10 V
V
GS
= 0 V
−0.15 V
µ
RANK: J4
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
160
240
320
400
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
80
01002468
−0.05 V
0.15 V
0.10 V
0.05 V
−0.10 V
V
GS
= 0 V
−0.15 V
µ
RANK: J5
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
300
400
500
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
100
01002468
−0.05 V
0.15 V
0.10 V
0.05 V
−0.10 V
−0.15 V
µ
V
GS
= 0 V
RANK: J6
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
280
420
560
700
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
140
01002468
−0.05 V
0.15 V
0.10 V
0.05 V
−0.10 V
V
GS
= 0 V
−0.15 V
µ
µ
RANK: J7
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
360
540
720
900
VDS - Drain to Source Voltage - V
ID - Drain Current - A
180
01002468
−0.05 V
0.15 V
0.10 V
0.05 V
−0.10 V
VGS = 0 V
−0.15 V
Data Sheet D16293EJ1V0DS 5
2SK3653
[MEMO]
2SK3653
M8E 00. 4
The information in this document is current as of June, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
•
•
•
•
•
•
