7MBR25NE120 - Fuji Electric

7MBR25NE120 IGBT Modules

IGBT MODULE

1200V / 25A / PIM

Features

· High Speed Switching

· Voltage Driv e

· Low Inductance Module Structure

· Converter Diode Bridge Dynamic Brake Circuit

Applications

· Inver ter for Motoe Drive

· AC and DC Servo Dr ive Amplifier

· Uninterruptible Power Supply

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless without specified)

Item Symbol Condition Rating Unit

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power disspation

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power disspation

Repetitive peak reverse voltage

Average forward current

Surge current

Repetitive peak reverse voltage

Non-Repetitive peak reverse voltage

Ave rage output current

Surge current (Non-Repetitive)

I²t (Non-Repetitive)

Conver ter Bra ke Inverter

Operating junction temperature

Storage temperature

Isolation voltage

Mounting screw torque

VCES

VGES

IC

ICP

-IC

PC

VCES

VGES

IC

ICP

PC

IF(AV)

IFSM

VRRM

VRSM

IO

IFSM

Tj

Tstg

Viso

Continuous

1ms

1 device

Continuous

1ms

1 device

10ms

50Hz/60Hz sine wave

Tj=150°C, 10ms

AC : 1 minute

1200

±20

25

50

25

200

1200

±20

15

30

120

1200

1

50

1600

1700

25

320

512

+150

-40 to +125

AC 2500

1.7 *1

V

A

W

V

A

W

V

A

V

A

A²s

°C

V

N·m

*1 Recommendable value : 1.3 to 1.7 N·m (M4)

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Electrical characteristics (Tj=25°C unless without specified)

Item Symbol Condition Characteristics Unit

Min. Typ. Max.

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Collector-Emitter voltage

Input capacitance

Switching time

Reverse recovery time of FRD

Zero gate voltage collector current

Gate-Emitter leakage current

Collector-Emitter saturation voltage

Switching time

Reverse current

Reverse recovery time

Forward voltage

Reverse current

Converter Brake Brake (IGBT) Inver ter (IGBT)

(FWD)

ICES

IGES

VGE(th)

VCE(sat)

-VCE

Cies

ton

tr

toff

tf

trr

ICES

IGES

VCE(sat)

ton

tr

toff

tf

IRRM

trr

VFM

IRRM

VCE=1200V, VGE=0V

VCE=0V, VGE=±20V

VCE=20V, IC=25mA

VGE=15V, Ic=25A

-Ic=25A

VGE=0V, VCE=10V, f=1MHz

VCC=600V

IC=25A

VGE=±15V

RG=51 ohm

IF=25A

VCES=1200V, VGE=0V

VCE=0V, VGE=±20V

IC=15A, VGE=15V

VCC=600V

IC=15A

VGE=±15V

RG=82 ohm

VR=1200V

IF=25A

VR=1600V

1.0

20

7.5

3.3

3.0

1.2

0.6

1.5

0.5

0.35

1.0

0.1

3.3

0.8

0.6

1.5

0.5

1

0.6

1.4

1.0

4000

4.5

mA

µA

V

pF

µs

mA

µA

V

µs

mA

µs

V

mA

Item Symbol Condition Characteristics Unit

Min. Typ. Max.

Inverter IGBT

Inverter FRD

Brake IGBT

Converter Diode

With thermal compound

0.63

1.70

1.04 °C/W

3.40

0.05

Thermal resistance ( 1 device ) Rth(j-c)

Contact thermal resistance * Rth(c-f)

Thermal Characteristics

IGBT Module 7MBR25NE120

* This is the value which is defined mounting on the additional cooling fin with thermal compound

Equivalent Circuit Schematic

* NLU (Over current Limiting circuit)

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IGBT Module 7MBR25NE120

Characteristics (Representative)

Collector current vs. Collector-Emitter voltage

Tj=25°C Collector current vs. Collector-Emitter voltage

Tj=125°C

Collector-Emitter vs. Gate-Emitter voltage

Tj=25°C Collector-Emitter vs. Gate-Emitter voltage

Tj=125°C

Switching time vs. Collector current

Vcc=600V, RG=51 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current

Vcc=600V, RG=51 ohm, VGE=±15V, Tj=125°C

Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]

Collector current : Ic [A]

40

20

30

10

0 0

0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage : VCE [V]

10

8

6

4

2

00 5 10 15 20 25 0 5 10 15 20 25

10

8

6

4

2

0

Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]

Switching time : ton, tr, toff, tf [n sec.]

1000

100

10 0 10 20 30 40 50

Collector current : Ic [A] Collector current : Ic [A]

Switching time : ton, tr, toff, tf [n sec.]

1000

100

10

Inverter

50

60

40

20

30

10

50

60

0 10 20 30 40 50

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IGBT Module 7MBR25NE120

Switching time vs. RG

Vcc=600V, Ic=25A, VGE=±15V, Tj=25°C

Dynamic input characteristics

Tj=25°C

Gate resistance : RG [ohm]

100 Gate charge : Qg [nC]

0 100 200 300 400 500

100

1000

800

600

400

200

0

Switching time : ton, tr, toff, tf [n sec.]

Collector-Emitter voltage : VCE [V]

Forward current : IF [A]

40

20

30

10

00 1 2 3 4 5

Gate-Emitter voltage : VGE [V]

0

5

15

20

25

Forward voltage : VF [V]

Reverse recovery current : Irr [A]

Reverse recovery time : trr [n sec.]

Forward current vs. Forward voltage

VGE=0V

Reverse recovery characteristics

trr, Irr, vs. IF

Forward current : IF [A]

10

100

1

Thermal resistance : Rth (j-c) [°C/W]

Transient thermal resistance

0.1

1

0.001 0.01 0.1 1

Pulse width : PW [sec.]

Reversed biased safe operating area

+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 51 ohm

0 10 20 30 40 50

<< >

250

200

150

100

50

00 200 400 600 800 1000 1200

Collector-Emitter voltage : VCE [V]

Collector current : Ic [A]

10

50

60

0.01

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IGBT Module 7MBR25NE120

Switching loss vs. Collector current

Vcc=600V, RG=51 ohm, VGE=±15V

Switching loss : Eon, Eoff, Err [mJ /cycle]

Collector current : Ic [A]

0

4

2

6

8

0 10 20 30 40 50 Collector-Emitter voltage : VCE [V]

0 5 10 15 20 25 30 35

0.1

1

10

Capacitance : Cies, Coes, Cres [nF]

Capacitance vs. Collector-Emitter voltage

Tj=25°C

Forward current : IF [A]

30

25

20

15

10

5

00 0.5 1.0 1.5 2.0

Forward voltage : VF [V]

Converter Diode

Forward current vs. Forward voltage

10

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IGBT Module 7MBR25NE120

Collector current vs. Collector-Emitter voltage

Tj=25°C Collector current vs. Collector-Emitter voltage

Tj=125°C

Collector-Emitter vs. Gate-Emitter voltage

Tj=25°C Collector-Emitter vs. Gate-Emitter voltage

Tj=125°C

Switching time vs. Collector current

Vcc=600V, RG=82 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current

Vcc=600V, RG=82 ohm, VGE=±15V, Tj=125°C

Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]

Collector current : Ic [A]

30

20

10

00

0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage : VCE [V]

10

8

6

4

2

00 5 10 15 20 25 0 5 10 15 20 25

10

8

6

4

2

0

Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]

Switching time : ton, tr, toff, tf [n sec.]

1000

100

10 0 10 20 30

Collector current : Ic [A] Collector current : Ic [A]

Switching time : ton, tr, toff, tf [n sec.]

1000

100

10

Brake

30

20

10

0 10 20 30

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IGBT Module 7MBR25NE120

Switching loss vs. Collector current

Vcc=600V, RG=82 ohm, VGE=±15V

Switching loss : Eon, Eoff, Err [mJ /cycle]

Collector current : Ic [A]

0

1

0 5 10 15 20 25 30

Collector-Emitter voltage : VCE [V]

0 5 10 15 20 25 30 35

0.1

1

Capacitance : Cies, Coes, Cres [nF]

Capacitance vs. Collector-Emitter voltage

Tj=25°C

Switching time vs. RG

Vcc=600V, Ic=15A, VGE=±15V, Tj=25°C

Dynamic input characteristics

Tj=25°C

Gate resistance : RG [ohm] Gate charge : Qg [nC]

0 50 100 150 200 250 300

100

1000

800

600

400

200

0

Switching time : ton, tr, toff, tf [n sec.]

Collector-Emitter voltage : VCE [V]

Gate-Emitter voltage : VGE [V]

0

5

10

15

20

25

Reversed biased safe operating area

+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 82 ohm

<< >

100

80

60

40

20

00 200 400 600 800 1000 1200

Collector-Emitter voltage : VCE [V]

Collector current : Ic [A]

100

2

120

160

3

4

5

6

10

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IGBT Module 7MBR25NE120

Outline Drawings, mm

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Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com