THYRISTOR
Type：
：：
：TSN10A80
TSN10A80TSN10A80
TSN10A80
Absolute Maximum Ratings
Rating Symbol Conditions Max. Rated Value Unit
Repetitive Peak off-state Voltage VDRM Tj=25°C800V
Repetitive Peak On-State Current *ITRM
Tc ≤ 100 °C, V
DM ≤400V
IG ≥80mA, dig/dt ≥0.5A/µs
tw ≤1.0µs，di/dt ≤1500A/µs
duty ≤0.005℅
500 A
Repetitive Peak Forward Current *IFRM Tc ≤ 100 °C, tw ≤1.0µs
duty ≤0.005℅ 500 A
Critical Rate of Rise of Off-State
Voltage
Permissible Rate of Down of
On-State Current *
di/dt
Tc ≤ 100 °C, V
DM ≤400V
IG ≥80mA, dig/dt ≥0.5A/µs
ITM ≤500A, tw ≤1.0µs
50Hz, 1min., without Cooling Fin
1500 A/µs
Peak Gate Power PGM f ≥50Hz, duty ≤10℅ 5 W
Average Gate PowerPG(AV) 0.5 W
Peak Forward Gate CurrentIGM f ≥50Hz, duty ≤10℅ 2 A
Peak Forward Gate VoltageVGM 10 V
Peak Reverse Gate VoltageVRGM 5 V
Operating Junction Temperature Range Tjw -40 to +125 °C
Storage Temperature Range Tstg -40 to +150 °C
* notes : Test Circuit & Current Wave Form
0.
5
•ITM
t
tw
ITM
di/dt = 0.4 • ITM/t
0.1•ITM
R SW L
VDM C
Thyristor Sample
10A 800V TO-262
Cnstruction : Planner Structure Reverse Conducting
Futures : High VDRM & Permissonable di/dt
Application : Stater for HID Lump Bullust Circuit
weight : 1.45g
Electrical Characteristics (Tj = 25 °C)
Characteristics SymbolConditionsMin. Typ. Max. Unit
Peak Off-State CurrentIDMVDM = VDRM 100
µA
Peak On-State VoltageVTMITM=20A 1.50 A
Peak Forward VoltageVFMIFM=10A 1.50 A
Gate Trigger CurrentIGT 20 mA
Gate Trigger VoltageVGTVDM=6V, RL
=10ohm 1.0 V
Holding CurrentIH
IG=50mA, ITM=1A 7 mA
Latching CurrentIL
IG=50mA 13 mA
Thermal ResistanceRth(j-c)Junction to Case 5 °C/W
Thermal ResistanceRth(j-a)Junction to Ambient 80 °C/W
TSN10A
0
8 OUT LINE DRAWING (Dimensi on : mm)
