10A 800V TO-262 THYRISTOR TypeTSN10A80 Cnstruction : Planner Structure Reverse Conducting Futures : High VDRM & Permissonable di/dt Application : Stater for HID Lump Bullust Circuit weight : 1.45g Absolute Maximum Ratings Rating Repetitive Peak off-state Voltage Symbol VDRM Repetitive Peak On-State Current * ITRM Repetitive Peak Forward Current * IFRM Critical Rate of Rise of Off-State Voltage Permissible Rate of Down of On-State Current * di/dt PeakGate Power PGM Average Gate Power PG(AV) Conditions Tj=25C Tc 100 C, VDM 400V IG 80mA, dig/dt 0.5A/s tw 1.0sdi/dt 1500A/s duty 0.005 Tc 100 C, tw 1.0s duty 0.005 Tc 100 C, VDM 400V IG 80mA, dig/dt 0.5A/s ITM 500A, tw 1.0s 50Hz, 1min., without CoolingFin Max. Rated Value 800 Unit V 500 A 500 A 1500 A/s 5 W 0.5 W 2 A f 50Hz, duty 10 f 50Hz, duty 10 PeakForward Gate Current IGM PeakForward Gate Voltage VGM 10 V PeakReverse Gate Voltage VRGM 5 V Operating Junction Temperature Range Tjw -40 to +125 C Storage Temperature Range Tstg -40 to +150 C * notes : Test Circuit & Current Wave Form R SW L 0.5*ITM ITM 0.1*ITM VDM t C Thyristor Sample tw di/dt = 0.4 * ITM/t Electrical Characteristics (Tj = 25 C) Characteristics Symbol Conditions Min. Typ. Max. Unit Peak Off-State Current IDM VDM = VDRM 100 A Peak On-State Voltage VTM ITM=20A 1.50 A Peak Forward Voltage VFM IFM=10A 1.50 A Gate Trigger Current IGT 20 mA 1.0 V VDM=6V, RL=10ohm Gate Trigger Voltage VGT HoldingCurrent IH IG=50mA, ITM=1A 7 mA LatchingCurrent IL IG=50mA 13 mA Thermal Resistance Rth(j-c) Junction to Case 5 C/W Thermal Resistance Rth(j-a) Junction to Ambient 80 C/W TSN10A08 OUTLINE DRAWING (Dimension: mm)