DATA SHEET KE PNP SILICON TRANSISTOR FLECTRON DEVICE oe. _.. 2SAT626 DESCRIPTION The 2SA1626 is designed for general purpose amplifier and high | / speed switching applications. PACKAGE DIMENSIONS in millimeters FEATURES @ High Voltage. i 7.0 MAX, 1.2 High Speed Switching. s Low Collector Saturation Voltage. ci x = | ABSOLUTE MAXIMUM RATINGS ; id | ; Maximum Temperatures /0.8+0.1 os Storage Temperature............... 55 to +150 C 6 Junction Temperature .........0.0. 150C Maximum 9.6 +0.1 = Maximum Power Dissipation (Tg = 25C) . e Total Power Dissipation. ............... 1.0 WwW Maximum Voltages and Currents (Ta = 25 C) Vcso Collector to Base Voltage......... 400 V 0.550.1 Vceo Collector to Emitter Voltage....... ~400 V x Vepo Emitter to Base Voltage.......... 70 V 4 s | @ le Collector Current (DC)........... 20 A + LS | lc Collector Current (pulse)*......... -40 A 1. Emitter * PW < 10 ms, Duty Cycle < 50 % 2: Collector . ELECTRICAL CHARACTERISTICS (Tg = 25 C) SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS heeq** DC Current Gain 40 60 120 = VcE=-5.0V, ic =0.1A a hreo** DC Current Gain 6 22 - VcE=5.0V, Ic =-1.0A fr Gain Bandwidth Product 10 40 MHz Vce=-10V, le =O01A Cob Output Capacitance , : 30 40 pF Veg = 10 V, Ie = 0, f = 1.0 MHz IcBo Collector Cutoff Current 10 uA Veg = 400 V, Ie =O leEBO Emitter Cutoff Current 10 uA Vep =5.0V, Ic =0 VcE(sat)** Collector Saturation Voltage 0.25 0.5 Vv Ic = -0.5A, lp=0.1A VBE(sat)** Base Saturation Voltage 0.85 1.2 Vv Ic =-0.5A, Igp=0.1A ton Turn On Time 0.03 0.5 us Ic =-1.0A, Rp = 1502 tstg Storage Time 1.4 2.0 us 1p1=lp2=O.2A tf Fall Time 0.1 0.7 us Vec = 150V ** Pulsed PW = 350 ws, Duty Cycle = 2% Classification of hrey Rank L K Range | 40to80 | 60 to 120 | @ Test Conditions: Veg = 5.0 V, Ic =-0.1A NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. .NEC Corporation 1988 2SA 1626 TYPICAL CHARACTERISTICS (T, = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.2 Free Air 1.0 0.8 0.6 0.4 0.2 Py Total Power DissipationW 1.0 0.3 0.1 0.03 \Collector CurrentA 0.01 0.003 26 50 75 100 125 TaAmbient Temperature C COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE CE=5.0 150 0 -0.2-0.40.6-0.81.0 -1.2-1.4-1.6 5.0 r f o um tsw Switching Time us N S a 0.05 Vae Base to Emitter VoltageV TURN-OFF TIME vs. COLLECTOR CURRENT Ip=5 150 0.05-0.1 -02 -05 1.0 -2.0 i Collector Current A COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE -1.0 | | 2 2 Dn foe] IgCollector CurrentA & _ | ip o -10 -20 -30 -40 -50 VcoeECollector to Emitter VoltageV DC CURRENT GAIN vs. COLLECTOR CURRENT VcE=5.0V c S oO < 2 5 30 oO a |, 10 ire xo 3 1 -0.002 -0.01 -005 -02 10 0.005 -0.02 -O1 -05 -20 \qCollector Current A VCE(sat)~ Collector Saturation VoltageV VBE(sat) Base Saturation VoltageV NE Cc ELECTRON DEVICE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE ~10 xt = 8.0 | 2 5-60 3 S f 2 E 8-40 \ 3 O-20 Ip= 7 90 uA 0 ~100 -200 300 -400 ~500 Vce Collector to Emitter VoltageV ~ COLLECTOR AND BASE SATURATION @ VOLTAGE vs. COLLECTOR CURRENT 10 \c/Ip=5 1.0 VBE(sat, 0.1 @ = 0.002 0.01 - 0.005 -0.02 ICollector CurrentA 0.05 -0.2 -10 ~-0.1 -05 2.0 TC4014 July 1988M Printed in Japan