TOSHIBA 3SK126 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3S$K126 TV TUNER, VHF RF AMPLIFIER APPLICATIONS Unit in mm TV TUNER VHF MIXER APPLICATIONS Superior Cross Modulation Performance. @ Low Reverse Transfer Capacitance : Cygg=0.03pF (Typ.) Low Noise Figure : NF=1.4dB (Typ.) 2 1.50 - 0.15 on MAXIMUM RATINGS (Ta = 25C) SS) ate Sy ae CHARACTERISTIC SYMBOL | RATING | UNIT Sy & {75 or Drain-Source Voltage Vps 15 Vv 8 Gate 1-Source Voltage VGI1Ss +9 Vv Me Gate 2-Source Voltage Vaos +9 Vv = ri 1. GATE 1 Drain Current Ip 30 mA > GATE 2 Drain Power Dissipation Pp 150 mW 3. DRAIN Chanel Temperature Tch 125 C 4. SOURCE Storage Temperature Range Tstg 55~125 C JEDEC EIAJ _ TOSHIBA 2-33 1A ELECTRICAL CHARACTERISTICS (Ta = 25C) Weight : 0.013g CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Gate 1 Leakage Current Iqgiss |Vps=9, Vais=+TV, Vaog=0} | 50] nA Gate 2 Leakage Current Igoss_ | Vps=0, Vais=9, Vegs=+t7V| | 50] nA Drain-Source Voltage V (BR) DSX te Soon a VG@2s V, 15 | Vv ; Ipss - = = Drain Current (Note) Vps=68V, Vaisg=0, Vags=3V Oo; 6 | mA Gate 1-Source Cut-off Vps=68V, Voos=3V, -1|; 1 Voltage VYGIS (OFF) 1 100A Vv Gate 2-Source Cut-off Vps=6V, Vais=3V, Voltage VG2S (OFF) 1, 100A 0.5 | ed Forward Transfer Vps=6V, Vaos=3V Admittance vfs! ty =10mA, f= 1H 13) 20) | ms Input Capacitance Cigs Vps=6V, Vaog=3V | 4.25 5.5 | pF Reverse Transfer Capacitance Cregg Ip=10mA, f=1MHz | 0.03 | 0.05 | pF Power Gain Gps Vps=8V, Vaa9g=3V 20 25 | dB Noise Figure NF Ip=10mA, f=200MHz 1.4 2.8 | dB Note : Ipgg Classification O:0~2mA, Y: 1~6mA 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-10-28 1/4 TOSHIBA 3SK126 Marking 2 1 AA UC HH = 3 4 10pF @ OUTPUT 7 Ry =500, INPUT _ o Ge or or Lj : Imm Ag Plated Copper Wire, 2 Turns, 8mm Ip Lg : lmm Ag Plated Copper Wire, 2.5 Turns, 8mm Ip Fig.1 200MHz Gps, NF TEST CIRCUIT Ip Vps COMMON COMMON SOURCE Ipss=4.2mA SOURCE Voug=3V Ipgs=0mA < Voeg=3V < Ta=25C & Ta =25C & & & 1.5 5 =3V 5 & 1 & aa] 2 aa] > > Do Do Zz 15 & = 0.5 s | a 1 a 0 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14 DRAIN-SOURCE VOLTAGE Vpg (V) DRAIN-SOURCE VOLTAGE Vpg (V) 1998-10-28 2/4 TOSHIBA 3SK126 Ip - Vais lYts|] VGis = COMMON -=- 1Dss= *2nA g SOURCE Vv, =4v 1-7-7 Ipsg=4.2mA ~ Dss* z Vps=6V Ipgg=0mA : common | V < Ta=25C = SOURCE 5 1 a Vps=6V a q Ta=25C a H ae Z aS faa Fa oe oa a=] e 5 sz o a a a s < a = 0.5 & a 05 0 O05 10 15 20 25 3.0 -05 0 O58 10 15 20 25 3.0 GATE1-SOURCE VOLTAGE Vqig (V) GATE1-SOURCE VOLTAGE Vqig (V) lYfs| - Ip 5 Gps, NF Vps = 28 T 8 --- Ipsg=4.2mA a eae Gps Zz Ipsg=0ma oS 94 ST | BE z, y COMMON = a Va2s=4V | 3 3 VA SOURCE 3 2 20 3 k Ip=10mA ne 3 iB f=200MHz 3 ae 5 4 Ta =25C 22 Pu . 2a COMMON ----- Ipgg=4.2mA te as SOURCE . Ipgg=0mA 4 = Vps=6V \\ } Ss 18 Q Ta=25C Vaog=3V a a ee z = YS 4 14 & 8 NF FS=E5x=rI3 g | 1 & 0 4 8 12 16 20 24 28 0 2 4 6 8 10 12 DRAIN CURRENT Ip (mA) DRAIN-SOURCE VOLTAGE Vpg (V) a Gps, NF Ip Gps Va2s = 30 ee a ld 5B 20 7 Z . / s a f --- Ipss=4.2mA S Ipsg=4.2mA o 10 4 Ht Ipss=0mA EB Ipgg=0mA ~ z 2 COMMON SOURCE 3 3 / VDD Vps=6V, Vgas=8V fe B40 / Vozs a f=200MHz, Ta =25C z z A S fe 90 | 4 i NF - > me 8 rif i Vpp =6V (=Vpg) +2000 (=R)x 10mA a at Vagg=3V 5 =200MHz, Ta=25C 2 4 6 8 10 12 14 -1 0 1 2 8 4 & 6 7 DRAIN CURRENT Ip (mA) GATE2-SOURCE VOLTAGE Vggg (V) 1998-10-28 3/4 TOSHIBA 3SK126 (pF) INPUT CAPACITANCE Cigg REVERSE TRANSFER SUSCEPTANCE OUTPUT SUSCEPTANCE bog (mS) Ciss VG2S COMMON SOURCE Vps=6V Vais : Va2s=3V Ip=10mA f=1MHz Ta=25C 4 2 0 2 4 6 GATE2-SOURCE VOLTAGE Vass (W) Yrs _ f REVERSE TRANSFER CONDUCTANCE gyg (mS) 0.05 0 0.05 0.1 0.06 | | | COMMON SOURCE f=450MHz | VDS=6V 0.04 Va2g=3Vv Ip=10mA Ta=25C @ 0.02 400 8 = 0 50 350 | -0.02 100 300 150 2 250 -0.04 00} 12 | COMMON SOURCE 450 Vps=6V 10 yA Va2s=3V Ip=10mA yt Ta=25 Z|. 400 a=25"C A350 300 250 4 A\ 200 | 150 100 f=50MHz 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 OUTPUT CONDUCTANCE gpg (mS) (mS) INPUT SUSCEPTANCE big FORWARD TRANSFER SUSCEPTANCE bfg (mS) DRAIN POWER DISSIPATION Pp (mW) 20 16 12 Yis f COMMON SOURCE Vpg=6V Vv, = G2s=8V be Ip=10mA 50 Ta=25C or | er 400 Ie 350 a 7 300 a | 250 - 200 7 150 A 00 | f=50MHz 0 0.5 1.0 1.5 2.0 25 3.0 3.5 -12 16 20 INPUT CONDUCTANCE gia (mS) Yfg f FORWARD TRANSFER CONDUCTANCE ggg (mS) 0 4 8 12 16 2 24 28 COMMON SOURCE | Vps=6V , 50 Vqgs=3V | | Ip=10mA Ta=25C ia ] 150 200 Ve a 300 350 }f=450MHe }7+ 400 Lt | Pp Ta 0 25 50 15 100 125 150 175 AMBIENT TEMPERATURE Ta (C) 1998-10-28 4/4