GMS05C thru GMS24C
Vishay Semiconductors
formerly General Semiconductor
Document Number 88346 www.vishay.com
17-May-02 1
New Product
Surface Mount TVS Diode Array
0.037 (0.95)
Ref.
0.074 (1.9)
Ref.
0.094 (2.4)
0.028 (0.7)
0.039
(1.07)
Mounting Pad Layout
Mechanical Characteristics
Case: SOT-23-6L package
Molding Compound Flammability Rating: UL 94V-0
Marking Codes: GMS05C: 05C
GMS12C: 12C
GMS15C: 15C
GMS24C: 24C
Packaging Codes – Options:
G1 – 10K per 13” reel, 30K/box
G2 – 3K per 7” reel, 30K/box
Features
• Transient protection for data lines as per
IEC 1000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 1000-4-4 (EFT) 40A (tp = 5/50ns)
IEC 1000-4-5 (Lightning) 24A (tp = 8/20µs)
• Small package for use in portable electronics
• Protects 5 I/O lines • Low leakage current
• Low operating and clamping voltages
• High temperature guaranteed: 250°C/10 sec. at terminals
Maximum Ratings and Thermal Characteristics(TA= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Peak Pulse Power 8/20µs waveform Ppk 350 W
Peak Pulse Current 8/20µs waveform IPP 24 A
Operating Temperature TJ–55 to +125 °C
Storage Temperature TSTG –55 to +150 °C
Pin Configuration
SOT-23-6L (Top View)
SOT-23-6L
0.120 (3.05)
0.110 (2.80)
0.070 (1.75)
0.059 (1.50)
0.118 (3.00)
0.102 (2.60)
0.020 (0.50)
0.014 (0.35)
0.006 (0.150)
0.0004 (0.010)
0.083 (2.1)
0.067 (1.7)
0.008 (0.20)
0.0035 (0.090)
10° T ypical
0.051 (1.30)
0.036 (0.90)
0.040 (1.05)
0.033 (0.85)
Top View
Dimensions in inches
and (millimeters)
Applications
• Cellular Handsets & Accessories
• Personal Digital Assistants (PDA’s) & Pagers
• Desktop PCs & Ser vers
• Notebook & Handheld Computers
• Portable Instrumentation
• Per ipherals
• Set Top Box
• MP3 Players
1
25
4
36
Protection of Four Unidirectional Lines
1
6
2
5
3
4
GMS05C thru GMS24C
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com Document Number 88346
217-May-02
GMS05C
Parameter Symbol Minimum Typical Maximum Unit
Reverse Stand-Off Voltage VRWM ––5V
Reverse Breakdown Voltage at It= 1mA VBR 6––V
Reverse Leakage Current at VRWM = 5V IR––20µA
Clamping Voltage at IPP = 5A, 8/20µs waveform VC––
9.8 V
at IPP = 24A, 8/20µs wavefor m 14.5
Junction Capacitance between I/O pins and Gnd Cj–325 400 pF
VR= 0V, f = 1MHZ
GMS12C
Parameter Symbol Minimum Typical Maximum Unit
Reverse Stand-Off Voltage VRWM ––12V
Reverse Breakdown Voltage at It= 1mA VBR 13.3 ––V
Reverse Leakage Current at VRWM = 12V IR––1µA
Clamping Voltage at IPP = 5A, 8/20µs waveform VC––
19 V
at IPP = 15A, 8/20µs wavefor m 23
Junction Capacitance between I/O pins and Gnd Cj–135 150 pF
VR= 0V, f = 1MHZ
GMS15C
Parameter Symbol Minimum Typical Maximum Unit
Reverse Stand-Off Voltage VRWM ––15V
Reverse Breakdown Voltage at It= 1mA VBR 16.7 ––V
Reverse Leakage Current at VRWM = 15V IR––1µA
Clamping Voltage at IPP = 5A, 8/20µs waveform VC––
24 V
at IPP = 12A, 8/20µs wavefor m 29
Junction Capacitance between I/O pins and Gnd Cj–100 125 pF
VR= 0V, f = 1MHZ
GMS24C
Parameter Symbol Minimum Typical Maximum Unit
Reverse Stand-Off Voltage VRWM ––24V
Reverse Breakdown Voltage at It= 1mA VBR 26.7 ––V
Reverse Leakage Current at VRWM = 24V IR––1µA
Clamping Voltage at IPP = 5A, 8/20µs waveform VC––
40 V
at IPP = 8A, 8/20µs wavefor m 44
Junction Capacitance between I/O pins and Gnd Cj–6075pF
VR= 0V, f = 1MHZ
All
Parameter Symbol Minimum Typical Maximum Unit
Peak Forward Voltage at IF= 1A, 8/20µs W aveform VF–1.5 – V
Electrical Characteristics(TA= 25°C unless otherwise noted)
GMS05C thru GMS24C
Vishay Semiconductors
formerly General Semiconductor
Document Number 88346 www.vishay.com
17-May-02 3
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
0
25
50
75
100
07525 50 100 125 150 175
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
TA — Ambient Temperature (°C)
Fig. 2 – Pulse Derating Curve
PPPM — Peak Pulse Power (kW)
Fig. 1 – Non-Repetitive P eak Pulse Power
vs. Pulse Time
0.1
1
10
0.1 1.0 10
td — Pulse Duration (µs)
100 1000
0
50
100
90
80
70
60
40
30
20
10
110
IPPM — Peak Pulse Current, % IRSM
Fig. 3 – Pulse W aveform
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
0105 15 20 30
25
t — Time (µs) IPP — Peak Pulse Current (A)
Fig. 4 – Clamping Voltage
vs. Peak Pulse Current
0.01
td = IPP
2
0
25
45
40
35
30
20
15
10
5
VC — Clamping V oltage (V)
0105 15 20 25 30
100
200
300
250
150
350
CJ — Junction Capacitance (pF)
Fig. 5 – Typical Junction Capacitance
021 34 6
5
VR — Reverse Voltage (V)
8/20µs pulse
GMS24C
GMS15C
GMS12C GMS05C
