SS13M - SS16M
Taiwan Semiconductor
1 Version: N1810
1A, 30V - 60V Surface Mount Schottky Barrier Rectifier
FEATURES
● AEC-Q101 qualified
● Very low profile - typical height of 0.68mm
● Low power loss, high efficiency
● Ideal for automated placement
● Moisture sensitivity level: level 1, per J-STD-020
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Converter
● Free wheeling
● LED lighting
● Adapters
MECHANICAL DATA
● Case: Micro SMA
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.006 g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
1
A
VRRM
30 - 60
V
IFSM
25
A
TJ MAX
150
°C
Package
Micro SMA
Micro SMA
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
SS13M
SS14M
SS16M
UNIT
Marking code on the device
A
B
C
Repetitive peak reverse voltage
VRRM
30
40
60
V
Forward current
IF(AV)
1
A
Surge peak forward current, 8.3 ms
single half sine-wave superimposed on
rated load per diode
IFSM
25
A
Junction temperature
TJ
- 55 to +150
°C
Storage temperature
TSTG
- 55 to +150
°C
SS13M - SS16M
Taiwan Semiconductor
2 Version: N1810
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP.
UNIT
Junction-to-lead Thermal Resistance
RӨJL
30
°C/W
Junction-to-ambient thermal resistance
RӨJA
125
°C/W
Junction-to-case thermal resistance
RӨJC
40
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Forward voltage per diode (1)
SS13M
SS14M
IF = 0.5A,TJ = 25°C
VF
0.45
-
V
IF = 1.0A,TJ = 25°C
0.52
0.55
V
IF = 0.5A,TJ = 125°C
0.35
-
V
IF = 1.0A,TJ = 125°C
0.46
0.50
V
SS16M
IF = 0.5A,TJ = 25°C
VF
0.51
-
V
IF = 1.0A,TJ = 25°C
0.64
0.68
V
IF = 0.5A,TJ = 125°C
0.46
-
V
IF = 1.0A,TJ = 125°C
0.57
0.60
V
Reverse current @ rated VR
per diode (2)
SS13M
SS14M
TJ = 25°C
IR
5
50
µA
TJ = 125°C
3
10
mA
TJ = 150°C
5.3
-
mA
SS16M
TJ = 25°C
IR
5
50
µA
TJ = 125°C
3
10
mA
TJ = 150°C
6
-
mA
Junction capacitance
SS13M
SS14M
1 MHz, VR=4.0V
CJ
50
-
pF
SS16M
40
-
pF
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
ORDERING CODE
PACKAGE
PACKING
SS13MHRSG
Micro SMA
3000 / 7" Plastic reel
SS14MHRSG
Micro SMA
3000 / 7" Plastic reel
SS16MHRSG
Micro SMA
3000 / 7" Plastic reel
SS13M RSG
Micro SMA
3000 / 7" Plastic reel
SS14M RSG
Micro SMA
3000 / 7" Plastic reel
SS16M RSG
Micro SMA
3000 / 7" Plastic reel
Note: “H” means AEC-Q101 qualified
SS13M - SS16M
Taiwan Semiconductor
3 Version: N1810
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
0
0.2
0.4
0.6
0.8
1
1.2
025 50 75 100 125 150
1
10
100
1000
0.1 1 10 100
SS16M
SS13M - SS14M
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
TJ=25°C
TJ=125°C
TJ=150°C
0.01
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
TJ=150°C
TJ=125°C
TJ=25°C
CAPACITANCE (pF)
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
0.001
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Pulse width
TJ=25°C
TJ=125°C
UF1DLW
FORWARD VOLTAGE (V)
AVERAGE FORWARD CURRENT (A)
LEAD TEMPERATURE (oC)
REVERSE VOLTAGE (V)
RESISTIVE OR
INDUCTIVE LOAD
SS13M - SS16M
Taiwan Semiconductor
4 Version: N1810
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Typical Reverse Characteristics
Fig.6 Typical Forward Characteristics
Fig.7 Maximum Forward Surge Current
Fig.8 Typical Transient Thermal Impedance
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
TJ=25°C
TJ=125°C
TJ=150°C
0.01
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
TJ=25°C
TJ=125°C
TJ=150°C
0
10
20
30
40
110 100
8.3ms Single Half Sine-Wave
1
10
100
1000
0.1 1 10 100
SS13M - SS14M
SS16M
NUMBER OF CYCLES AT 60 Hz
TRANSIENT THERMAL IMPEDANCE(°C/W)
t-PULSE DURATION(S)
REVERSE VOLTAGE (V)
PEAK FORWARD SURAGE CURRENT(A)
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
0.001
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Pulse width
TJ=25°C
TJ=125°C
UF1DLW
SS13M - SS16M
Taiwan Semiconductor
5 Version: N1810
PACKAGE OUTLINE DIMENSIONS
Micro SMA
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N
= Marking Code
YW
= Date Code
SS13M - SS16M
Taiwan Semiconductor
6 Version: N1810
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
