SuperFET TM FCD7N60 / FCU7N60 600V N-Channel MOSFET Features Description * 650V @TJ = 150C SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. * Typ. Rds(on)=0.53 * Ultra low gate charge (typ. Qg=23nC) * Low effective output capacitance (typ. Coss.eff=60pF) * 100% avalanche tested * RoHS Compliant D D G G S D-PAK I-PAK G D S FCD Series FCU Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS IAR FCD7N60/FCU7N60 (Note 1) Unit 600 V 7 4.4 A A 21 A 30 V Single Pulsed Avalanche Energy (Note 2) 230 mJ Avalanche Current (Note 1) 7 A EAR Repetitive Avalanche Energy (Note 1) 8.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns PD Power Dissipation 83 0.67 W W/C -55 to +150 C 300 C (TC = 25C) - Derate above 25C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds Thermal Characteristics Symbol Parameter FCD7N60/FCU7N60 Unit RJC Thermal Resistance, Junction-to-Case 1.5 C/W RJA Thermal Resistance, Junction-to-Ambient 83 C/W (c)2008 Fairchild Semiconductor Corporation FCD7N60/FCU7N60 Rev. A1 1 www.fairchildsemi.com FCD7N60/FCU7N60 600V N-Channel MOSFET December 2008 Device Marking Device Package Reel Size Tape Width Quantity FCD7N60 FCD7N60TM D-PAK 380mm 16mm 2500 FCD7N60 FCD7N60TF D-PAK 380mm 16mm 2000 FCU7N60 FCU7N60 I-PAK - - 70 Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A, TJ = 25C 600 -- -- V VGS = 0V, ID = 250A, TJ = 150C -- 650 -- V ID = 250A, Referenced to 25C -- 0.6 -- V/C BVDSS / TJ Breakdown Voltage Temperature Coefficient BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 7A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125C --- --- 1 10 A A IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.53 0.6 -- 6 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 3.5A gFS Forward Transconductance VDS = 40V, ID = 3.5A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 710 920 pF -- 380 500 pF Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 34 -- pF -- 22 29 pF Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 60 -- pF VDD = 300V, ID = 7A RG = 25 -- 35 80 ns -- 55 120 ns -- 75 160 ns -- 32 75 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 480V, ID = 7A VGS = 10V (Note 4, 5) -- 23 30 nC -- 4.2 5.5 nC -- 11.5 -- nC -- -- 7 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 21 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 7A -- -- 1.4 V trr Reverse Recovery Time 360 -- ns Reverse Recovery Charge VGS = 0V, IS = 7A dIF/dt =100A/s -- Qrr -- 4.5 -- C (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 3.5A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 7A, di/dt 1200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature FCD7N60/FCU7N60 Rev. A1 2 www.fairchildsemi.com FCD7N60/FCU7N60 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 ID , Drain Current [A] ID, Drain Current [A] 1 10 0 10 10 o 150 C o 25 C 0 10 o -55 C * Notes : 1. 250s Pulse Test o 2. TC = 25 C -1 * Note 1. VDS = 40V 2. 250s Pulse Test 10 -1 10 -1 0 10 2 1 10 10 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR , Reverse Drain Current [A] 2.0 RDS(ON) [], Drain-Source On-Resistance 1.8 1.6 1.4 VGS = 10V 1.2 1.0 0.8 0.6 VGS = 20V 0.4 0.2 1 10 0 10 o 150 C o 25 C * Notes : 1. VGS = 0V 2. 250s Pulse Test o * Note : TJ = 25 C -1 0.0 0 5 10 15 10 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3000 Ciss = Cgs + Cgd (Cds = shorted) 12 Coss = Cds + Cgd VDS = 100V VGS, Gate-Source Voltage [V] Capacitance [pF] Crss = Cgd 2000 Coss * Notes : 1. VGS = 0 V Ciss 1000 2. f = 1 MHz Crss VDS = 250V 10 VDS = 400V 8 6 4 2 * Note : ID = 7A 0 -1 10 0 10 1 10 0 0 VDS, Drain-Source Voltage [V] FCD7N60/FCU7N60 Rev. A1 5 10 15 20 25 o QG, Total Gate Charge [ C] 3 www.fairchildsemi.com FCD7N60/FCU7N60 600V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 * Notes : 1. VGS = 0V 0.9 2. ID = 250A Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 3.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 o 100 150 200 TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 10.0 2 10 Operation in This Area is Limited by R DS(on) 100 s 1 7.5 10 ID, Drain Current [A] ID, Drain Current [A] 50 o TJ, Junction Temperature [ C] 1 ms 10 ms DC 0 10 * Notes : o 1. TC = 25 C -1 10 5.0 2.5 o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0.0 25 3 10 10 50 75 100 125 150 o VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 10 0 ZJC(t), Thermal Response D = 0 .5 0 .2 * N o te s : o 1 . Z J C (t) = 1 .5 C /W M a x. 0 .1 10 -1 2 . D u ty F a c to r, D = t 1 /t 2 0 .0 5 3 . T JM - T C = P D M * Z JC (t) 0 .0 2 PDM 0 .0 1 t1 10 10 t2 s in g le p u ls e -2 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FCD7N60/FCU7N60 Rev. A1 4 www.fairchildsemi.com FCD7N60/FCU7N60 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FCD7N60/FCU7N60 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCD7N60/FCU7N60 Rev. A1 5 www.fairchildsemi.com FCD7N60/FCU7N60 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FCD7N60/FCU7N60 Rev. A1 6 www.fairchildsemi.com FCD7N60/FCU7N60 600V N-Channel MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters FCD7N60/FCU7N60 Rev. A1 7 www.fairchildsemi.com FCD7N60/FCU7N60 600V N-Channel MOSFET Package Dimensions (Continued) I-PAK Dimensions in Millimeters FCD7N60/FCU7N60 Rev. A1 8 www.fairchildsemi.com FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) tm Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW /W /kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) (R) tm PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM The Power Franchise(R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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