CDBF0320/0330/0340
REV:B
0.102(2.60)
0.095(2.40)
0.020(0.50) Typ.
0.051(1.30)
0.043(1.10)
0.035(0.90)
0.027(0.70)
Dimensions in inches and (millimeter)
0.012 (0.30) Typ.
0.040(1.00) Typ.
Page 1
QW-A1036
Symbol Typ
Parameter Conditions Min
Max
Unit
Forward voltage
Capacitance between terminals
Reverse recovery time
f = 1 MHz, and 0 VDC reverse voltage
IF=IR=10mA,Irr=0.1xIR,RL=100 ohm
CT
Trr
pF
nS
6.4
50
CDBF0330
CDBF0320
CDBF0340
VFV
5
5
5
0.37
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Reverse current
IRuA
IF = 20mA
IF = 200mA
VR = 10V
VR = 20V
VR = 30V
0.60
O
Maximum Rating (at TA=25 C unless otherwise noted)
VR
VRRM
Reverse voltage
Repetitive Peak reverse voltage
Symbol
Parameter CDBF0320 Unit
V
30
IO
VR(RMS)
Average forward rectified current
RMS reverse voltage
mA
V
350
IFSM A
1.5
TSTG
Tj
Storage temperature
Junction temperature
OC
OC
-65 TO +125
PD
Power dissipation
Thermal resistance junction
to ambient air
mW
OC/W
200
500R JA
8.3 ms single half sine-wave
Forward current, surge peak
CDBF0330 CDBF0340
4020
14 21 28
+125
SMD Schottky Barrier Diode
1005/SOD-323F
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 1005/SOD-323F standard package
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-
-Mounting position: Any
-Weight: 0.006 gram(approx.).
Polarity: Indicated by cathode band.
Io = 350 mA
VR = 20 to 40 Volts
RoHS Device
REV:B
Page 2
QW-A1036
RATING AND CHARACTERISTIC CURVES (CDBF0320/0330/0340)
Forward current (mA )
0.2 0.40
10
100
0.6
1
0.01
Forward voltage (V)
Fig. 1 - Forward characteristics
1000
0.1
O
-25C
O
25C
O
75 C
0.1 0.3 0.5
Reverse current ( A )
Reverse voltage (V)
10u
10n
100u
1m
1u
100n
0 10 20 30 40
Fig. 2 - Reverse characteristics
O
25 C
O
75 C
O
125 C
0
20
40
60
80
100
0 25 50 75 100 125 150
O
Ambient temperature ( C)
Average forward current(%)
Mounting on glass epoxy PCBs
Fig.4 - Current derating curve
120
Capacitance between terminals (PF)
Reverse voltage (V)
Fig.3 - Capacitance between
terminals characteristics
0 10 20 30 40
0
10
f=1MHz
O
TA=25 C
20
30
40
50
O
125C
SMD Schottky Barrier Diode
