BA982, BA983 Vishay Semiconductors Band Switching Diodes FEATURES * Silicon planar diodes * Low dynamic forward resistance * Low diode capacitance * High reverse impedance * QuadroMELF package 9612009 * AEC-Q101 qualified MECHANICAL DATA * Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC Case: QuadroMELF SOD-80 Weight: approx. 34 mg Cathode band color: black Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/2.5K per 7" reel (8 mm tape), 12.5K/box and in APPLICATIONS * Band switching in VHF-tuners PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE REMARKS BA982 VR = 35 V, rf at IF 3 mA = max. 0.7 BA982-GS18 or BA982-GS08 Tape and reel BA983 VR = 35 V, rf at IF 3 mA = max. 1.2 BA983-GS18 or BA983-GS08 Tape and reel ABSOLUTE MAXIMUM RATINGS (1) PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITIONS VR 35 UNIT V Forward continuous current IF 100 mA Note (1) T amb = 25 C, unless otherwise specified THERMAL CHARACTERISTICS (1) PARAMETER Junction to ambient air TEST CONDITION SYMBOL VALUE UNIT On PC board 50 mm x 50 mm x 1.6 mm RthJA 500 K/W Junction temperature Storage temperature range Tj 150 C Tstg - 55 to + 150 C Note Tamb = 25 C, unless otherwise specified (1) ELECTRICAL CHARACTERISTICS (1) PARAMETER MAX. UNIT Forward voltage TEST CONDITION IF = 100 mA VF 1000 mV Reverse current VR = 20 V IR 50 nA f = 100 MHz, VR = 1 V CD1 1.5 pF BA982 CD2 1.25 pF BA983 CD2 1.2 pF BA982 rf1 0.7 BA983 rf1 1.2 BA982 rf2 0.5 BA983 rf2 0.9 Diode capacitance f = 100 MHz, VR = 3 V f = 200 MHz, IF = 3 mA Dynamic forward resistance f = 200 MHz, IF = 10 mA PART SYMBOL MIN. TYP. Note (1) T amb = 25 C, unless otherwise specified Document Number: 85534 Rev. 1.6, 16-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BA982, BA983 Band Switching Diodes Vishay Semiconductors 100 3.0 f = 200 MHz Tj = 25 C 10 BA983 1 BA982 f = 200 MHz Tj = 25 C 2.5 2.0 1.5 BA982 1.0 BA983 0.5 0 0.1 0.1 20057 CD - Diode Capacitance (pF) rf - Differential Forward Resistance () TYPICAL CHARACTERISTICS Tamb = 25 C, unless otherwise specified 1 10 0.1 100 1 IF - Forward Current (mA) Fig. 1 - Dynamic Forward Resistance vs. Forward Current 10 100 VR - Reverse Voltage (V) 20058 Fig. 2 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): QuadroMELF SOD-80 (0 7 as 1. gl 1.4 (0.055) 1.6 (0.063) s .0 67 ) Cathode identification > R3 (R0.118) glass 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 2.5 (0.098) max. 2 (0.079) min. 1.25 (0.049) min. 5 (0.197) ref. 96 12071 Document Number: 85534 Rev. 1.6, 16-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 2 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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