
7/8
Note, however, that the stable range sug gested in the figure depends on the IC an d the resistance load involved, and can
vary with the board’s wiring impedance, input impedance, and/or load impedance. Therefore, be certain to ascertain the final
status of these items for actual use.
Keep capacitor capacitance within a range of 22μF~1000μF. It is also recommended that a 0.33μF bypass capacitor be
connected as close to the input pin-GND as location possible. Ho wever, in situations such as rapid fluctuation of the input
voltage or the load, please check the operation in real application to determine proper capacitance.
Fig.33:Output equivalent circuit Fig.34:Io vs. ESR characteristics Fig.35: Io vs. ESR characteristics
(BA□□CC0,22μF) (BA□□DD0,22μF)
●Other
1) Protection Circuits
Overcurrent Protection Circuit
A built-in overcurrent protection circuit corresponding to the current capacity prevents the destruction of the IC when there
are load shorts. This protection circuit is a “7”-shaped current control circuit that is designed such that the current is restricted
and does not latch even when a large current momentarily flows through the system with a high-capacitance capacitor.
However, while this protection circuit is effective for the prevention of destruction due to unexpected accidents, it is not
suitable for continuous operation or transient use. Please be aware when creating thermal designs that the overcurrent
protection circuit has negative current capacity characteristics with regard to temperature (Refer to Figs.4 and 16).
Thermal Shutdown Circuit (Thermal Protection)
This system has a built-in temperature protection circuit for the purpose of protecting the IC from thermal damage. As shown
above, this must be used within the range of acceptable loss, but if the acceptable loss happens to be continuously
exceeded, the chip temperature Tj increases, causing the temperature protection circuit to operate.
When the thermal shutdown circuit operates, the operation of the circuit is suspended. The circuit resumes operation
immediately after the chip temperature Tj decreases, so the output repeats the ON and OFF states (Please refer to Figs.12
and 24 for the temperatures at which the temperature protection circuit oper ates).
There are cases in which the IC is destroyed due to thermal runa way when it is left in the overloaded state. Be sure to avoid
leaving the IC in the overloaded state.
Reverse Current
In order to prevent the destruction of the IC when a reverse current flows through the IC, it is reco mmended that a diode be
placed bet ween the Vcc and Vo and a pathway be created so that the current can escape (Refer to Fig.36).
2) This IC is bipolar IC that has a P-board (substrate) and P+ isolation layer
between each devise, as shown in Fig.37. A P-N junction is formed between
this P-layer and the N-layer of each device, and the P-N junction operates
as a parasitic diode when the electric potential relationship is GND>
Terminal A, GND> Terminal B, while it operates as a parasitic transistor
when the electric potential relationship is Terminal B GND> Terminal A.
Parasitic devices are intrinsic to the IC. The operation of parasitic devices
induces mutual interference between circuits, causing malfunctions and
eventually the destructio n of the IC itself. It is necessar y to be careful not to
use the IC in ways that would cause parasitic elements to operate. For
example, applying a voltage that is lower than the GND (P-board) to the
input terminal.
Fig. 37: Example of the basic structure of a bipolar IC
22μF
OUT
IC
C(ADJ)
200 400 800 1000
0.1
1
10
Stab le oper a tin g reg io n
100
0 600
Unstable operating region
Unstable operating region
1
0.1
1
10
100
10 100 1000
OUTPUT CURRENT:lo(mA) OUTPUT CURRENT:lo(mA)
Unstable operating region
Unstable operating region
Stab le oper a tin g reg io n
EFFECTIVE SERIES RESISTANCE:ESR [Ω]
EFFECTIVE SERIES RESISTANCE:ESR [Ω]
GND
N P
N
P+ P+
Parasitic element
or transistor
(Pin B) BE
Transistor
NPN
N
P
N
GND
O (Pin A)
GND
N
P+
Resistor
Parasitic element
P
NPP+
N
(Pin A)
Parasitic element
or transistor
(Pin B)
ND
C
B E
Parasitic element
ND
Fig. 36:Bypass diode
OUT
Vcc
CTL GND
Reverse current