Buffer Amplifier
20 – 37 GHz
Rev. V4
MAAM-011112
1
1
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* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
Features
Wide Bandwidth
24 dB Gain
20 dBm Output Power
30 dBm IP3
+4V Bias Supply
Lead-Free 3 mm 16-Lead PQFN Package
RoHS* Compliant and 260°C Reflow Compatible
Description
The MAAM-011112 is a 4-stage amplifier covering
many bands from 20 to 37 GHz with good return
losses, high gain, and good linearity. No external
matching components are required. This amplifier is
internally matched to 50 ohms. The input and output
are DC blocked.
The MAAM-011112 primary applications include
buffer amplifiers in LO chains and driver amplifiers in
transmit lineups for Point-to-Point and Point-to-
Multipoint communication systems.
The 3 mm PQFN package has a lead-free finish that
is RoHS compliant and compatible with a 260ºC
reflow temperature. The package also features low
lead inductance and an excellent thermal path.
Ordering Information1
Part Number Package
MAAM-011112-TR0500 500 piece reel
MAAM-011112-000000 Bulk Packaging
MAAM-011112-000SMB Sample Board
1. Reference Application Note M513 for reel size information.
Block Diagram
Pin Function Pin Function
1 GND 9 GND
2 GND 10 RFOUT
3 RFIN 11 GND
4 GND 12 GND
5 VG1 13 VD4
6 VG2 14 VD3
7 VG3 15 VD2
8 VG4 16 VD1
Pin Designations2
The exposed pad centered on the package bottom must be
connected to RF and DC ground.
GND
GND
RFOUT
GND
GND
Vg1 Vd1
Vd3
Vd4
Vd2Vg2
Vg3
Vg4
GND
GND
RFIN
Buffer Amplifier
20 – 37 GHz
Rev. V4
MAAM-011112
2
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2
Electrical Specifications:
TA=+25°C, VDD = 4.0 V3, Z0 = 50 Ω, ID1 = 75 mA , ID2 = 35 mA, ID3 = 75 mA , ID4 = 150 mA
Gain dB 21 24 —
Input Return Loss dB — 8 —
Output Return Loss dB — 10 —
Output P1dB dBm — 18 —
Saturated Power dBm — 20 —
Output IP3 dBm 26.5 30 —
Noise Figure dB — 6.5 —
Supply Current (ID1+ID2+ID3+ID4) mA — 335 400
Drain Voltage (VD1,2,3,4) V — 4.0 —
Gate Voltage (VG1,2,3,4) V — -0.3 —
Absolute Maximum Ratings 4,5
Parameter Absolute Maximum
Input Power 0 dBm
Drain Voltage +4.3 V
Gate Voltage 0 V
Drain Current 500 mA
Storage Temperature -55ºC to +150ºC
Operating Temperature -40ºC to +85ºC
Junction Temperature +150ºC
4. Exceeding any one or combination of these limits may cause
permanent damage to this device.
5. M/A-COM Technology does not recommend sustained
operation near these survivability limits.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
Class 1A devices.
3. Gate voltage must be applied prior to drain voltage. Set VG1, VG2, VG3, VG4, to –1.0V, apply VDD, then adjust VG1, VG2, VG3, VG4 to achieve
specified current. Typical Current,335 mA = 75 (ID1) + 35 (ID2) + 75 (ID3) + 150 (ID4)
Buffer Amplifier
20 – 37 GHz
Rev. V4
MAAM-011112
3
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
3
Typical Performance Curves
Input Return Loss
Gain Noise Figure
Output Return Loss
Output IP3 P1dB
0
10
20
30
40
15 20 25 30 35 40
Frequency (GHz)
-40
-30
-20
-10
0
15 20 25 30 35 40
Frequency (GHz)
-40
-30
-20
-10
0
15 20 25 30 35 40
Frequency (GHz)
0
2
4
6
8
10
15 20 25 30 35 40
Frequency (GHz)
15
20
25
30
35
4 8 12 16
17.5 GHz
24.7 GHz
30.1 GHz
35.0 GHz
40.0 GHz
Output Power per Tone (dBm)
0
5
10
15
20
25
15 20 25 30 35 40
Frequency (GHz)
Buffer Amplifier
20 – 37 GHz
Rev. V4
MAAM-011112
4
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
4
App Note [1] Biasing
As shown in the Pin Designation table, the device is operated by biasing Vd1, Vd2, Vd3 and Vd4 at 4.0 V. The
corresponding drain currents are set to 75 mA, 35 mA, 75 mA and 150 mA respectively. It is recommended to
use active bias on Vg1, Vg2, Vg3 and Vg4 to keep the currents in Vd1, Vd2, Vd3 and Vd4 constant, in order to
maintain the best performance over temperature. Depending on the supply voltages available and the power
dissipation constraints, the bias circuits may include a single transistor or a low power operational amplifier, with
a low value resistor in series with the drain supply to sense the current. Make sure to sequence the applied
voltage to ensure negative gate bias is available before applying the positive drain supply.
Lead-Free 3 mm 16-Lead PQFN†
† Reference Application Note S2083 for lead-free solder reflow recommendations.
Meets JEDEC moisture sensitivity level 1 requirements.
Plating is 100% matte tin plating over copper
Buffer Amplifier
20 – 37 GHz
Rev. V4
MAAM-011112
5
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
5
M/A-COM Technology Solutions Inc. All rights reserved.
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products. These materials are provided by MACOM as a service to its customers and may be used for
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ifications and product descriptions at any time, without notice. MACOM makes no commitment to update the in-
formation and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future chang-
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WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
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