PESD12VS1UL,315 - NEXPERIA - Product.Network

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1. Product profile

1.1 General description

Unidirectional ElectroS tatic Discharge (ESD) protection diodes in a SOD882 leadless ultra

small Surface Mounted Device (SMD) plastic package designed to pro tect o ne sign al line

from the damage caused by ESD and other transients.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PESDxS1UL series

Unidirectional ESD protection diodes

Rev. 3 — 25 October 2011 Product data sheet

Ultra small SMD plastic package Ultra low leakage current: IRM <700nA

ESD protection of on e line ESD protection up to 30 kV

Max. peak pulse power: PPP =150W IEC 61000-4-2; level 4 (ESD)

Low clamping voltage: VCL =20V IEC 61000-4-5; (surge); IPP up to 15 A

AEC-Q101 qualified

Computers and peripherals Communication systems

Audio and video equipment High-speed data lines

Parallel ports

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse standoff voltage

PESD3V3S1UL - - 3.3 V

PESD5V0S1UL - - 5.0 V

PESD12VS1UL - - 12 V

PESD15VS1UL - - 15 V

PESD24VS1UL - - 24 V

Cddiode capacitance f = 1 MHz; VR=0V

PESD3V3S1UL - 207 300 pF

PESD5V0S1UL - 152 200 pF

PESD12VS1UL - 38 75 pF

PESD15VS1UL - 32 70 pF

PESD24VS1UL - 23 50 pF

Product data sheet Rev. 3 — 25 October 2011 2 of 15

NXP Semiconductors PESDxS1UL series

Unidirectional ESD protection diodes

2. Pinning information

[1] The marking bar indicates the cathode.

3. Ordering information

4. Marking

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode [1]

2 anode

Transparent

top view

sym035

Tabl e 3. Ordering i nfo rmation

Type number Package

Name Description Version

PESD3V3S1UL - leadless ultra small plastic package; 2 terminals;

body 1.0 0.6 0.5 mm SOD882

PESD5V0S1UL

PESD12VS1UL

PESD15VS1UL

PESD24VS1UL

Table 4. Marking codes

Type number Marking code

PESD3V3S1UL G1

PESD5V0S1UL G2

PESD12VS1UL G3

PESD15VS1UL G4

PESD24VS1UL G5

Product data sheet Rev. 3 — 25 October 2011 3 of 15

NXP Semiconductors PESDxS1UL series

Unidirectional ESD protection diodes

5. Limiting values

[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.

[1] Device stressed with ten non-repetitive ESD pulses.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

PPP peak pulse power tp=8/20s[1] -150W

IPP peak pulse current tp=8/20s[1]

PESD3V3S1UL - 15 A

PESD5V0S1UL - 15 A

PESD12VS1UL - 5 A

PESD15VS1UL - 5 A

PESD24VS1UL - 3 A

Tjjunction temperature - 150 C

Tamb ambient temperature 65 +150 C

Tstg storage temperature 65 +150 C

Table 6. ESD maximum ratings

Symbol Parameter Conditions Min Max Unit

VESD electrostatic discharge voltage IEC 61000-4-2

(contact discharge) [1]

PESD3V3S1UL - 30 kV

PESD5V0S1UL - 30 kV

PESD12VS1UL - 30 kV

PESD15VS1UL - 30 kV

PESD24VS1UL - 23 kV

PESDxS1UL series MIL-STD-883

(human body model) -10kV

Table 7. ESD standards compliance

Standard Conditions

IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3B (human body model) > 8 kV

Product data sheet Rev. 3 — 25 October 2011 4 of 15

NXP Semiconductors PESDxS1UL series

Unidirectional ESD protection diodes

6. Characteristics

Fig 1. 8/20 s pulse waveform according to

IEC 61000-4-5 Fig 2. ESD pulse waveform according to

IEC 61000-4-2

t (μs)

0403010 20

001aaa630

120

IPP

(%)

e−t

100 % IPP; 8 μs

50 % IPP; 20 μs

001aaa631

100 %

90 %

30 ns 60 ns

10 %

= 0.7 ns to 1 ns

Table 8. Characteristics

Tamb =25



C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse standoff voltage

PESD3V3S1UL - - 3.3 V

PESD5V0S1UL - - 5.0 V

PESD12VS1UL - - 12 V

PESD15VS1UL - - 15 V

PESD24VS1UL - - 24 V

IRM reverse leakage current

PESD3V3S1UL VRWM =3.3V - 0.7 2 A

PESD5V0S1UL VRWM =5.0V - 0.1 1 A

PESD12VS1UL VRWM =12V - <1 50 nA

PESD15VS1UL VRWM =15V - <1 50 nA

PESD24VS1UL VRWM =24V - <1 50 nA

VBR breakdown voltage IR=5mA [1]

PESD3V3S1UL 5.2 5.6 6.0 V

PESD5V0S1UL 6.4 6.8 7.2 V

PESD12VS1UL 14.7 15.0 15.3 V

PESD15VS1UL 17.6 18.0 18.4 V

PESD24VS1UL 26.5 27.0 27.5 V

Product data sheet Rev. 3 — 25 October 2011 5 of 15

NXP Semiconductors PESDxS1UL series

Unidirectional ESD protection diodes

[1] Pulse test: tp300 s; duty cycle 0.02.

[2] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.

Cddiode capacitance f = 1 MHz; VR=0V

PESD3V3S1UL - 207 300 pF

PESD5V0S1UL - 152 200 pF

PESD12VS1UL - 38 75 pF

PESD15VS1UL - 32 70 pF

PESD24VS1UL - 23 50 pF

VCL clamping voltage [2]

PESD3V3S1UL IPP =1A --8V

IPP =15A --20V

PESD5V0S1UL IPP =1A --9V

IPP =15A --20V

PESD12VS1UL IPP =1A --19V

IPP =5A --35V

PESD15VS1UL IPP =1A --23V

IPP =5A --40V

PESD24VS1UL IPP =1A --36V

IPP =3A --70V

rdif differential resistance

PESD3V3S1UL IR= 1 mA - - 400 

PESD5V0S1UL IR=1mA --80

PESD12VS1UL IR= 1 mA - - 200 

PESD15VS1UL IR= 1 mA - - 225 

PESD24VS1UL IR= 0.5 mA - - 300 

Table 8. Characteristics …continued

Tamb =25



C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 3 — 25 October 2011 6 of 15

NXP Semiconductors PESDxS1UL series

Unidirectional ESD protection diodes

Tamb =25C

Fig 3. Peak pulse power as a function of exponential

pulse duration; typical values Fig 4. Relative variation of peak pulse po we r a s a

function of junction temperature; typical

values

f=1MHz; T

amb =25C

(1) PESD3V3S1UL; VRWM =3.3V

(2) PESD5V0S1UL; VRWM =5.0V

f=1MHz; T

amb =25C

(1) PESD12VS1UL; VRWM =12V

(2) PESD15VS1UL; VRWM =15V

(3) PESD24VS1UL; VRWM =24V

Fig 5. Diode capacitance as a function of reverse

voltage; typical values Fig 6. Diode ca pacitance as a function of reverse

voltage; typical values

tp (μs)

110

102

001aaa726

103

102

104

PPP

(W)

Tj (°C)

0 20015050 100

001aaa193

0.4

0.8

1.2

PPP

PPP(25°C)

VR (V)

054231

001aaa727

120

160

200

240

(pF)

(1)

(2)

VR (V)

0252010 155

001aaa728

(pF)

(1)

(3)

(2)

Product data sheet Rev. 3 — 25 October 2011 7 of 15

NXP Semiconductors PESDxS1UL series

Unidirectional ESD protection diodes

(1) PESD3V3S1UL; VRWM =3.3V

(2) PESD5V0S1UL; VRWM =5.0V

IR is less than 15 nA at 150 C for:

PESD12VS1UL; VRWM =12V

PESD15VS1UL; VRWM =15V

PESD24VS1UL; VRWM =24V

Fig 7. Relative variation of reverse leakage current

as a function of junction temperature; typical

values

Fig 8. V -I characteristics for a unidirectional ESD

protection diode

001aaa729

10−1

Tj (°C)

−100 150100050−50

IRM

(1)

(2)

IRM(25°C)

006aaa407

−V

RWM

−I

P-N

−+

Product data sheet Rev. 3 — 25 October 2011 8 of 15

NXP Semiconductors PESDxS1UL series

Unidirectional ESD protection diodes

Fig 9. ESD clamping test setu p and waveforms

006aaa682

450 Ω

50 Ω

Note 1: IEC 61000-4-2 network

Cs = 150 pF; Rd = 330 Ω

RG 223/U

50 Ω coax

ESD TESTER 4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

vertical scale = 200 V/div

horizontal scale = 50 ns/div vertical scale = 20 V/div

horizontal scale = 50 ns/div

vertical scale = 200 V/div

horizontal scale = 50 ns/div vertical scale = 10 V/div

horizontal scale = 50 ns/div

GND

unclamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network)

GND

unclamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network)

note 1

PESD24VS1UL

PESD15VS1UL

PESD12VS1UL

PESD5V0S1UL

PESD3V3S1UL

D.U.T.

(DEVICE

UNDER

TEST)

Product data sheet Rev. 3 — 25 October 2011 9 of 15

NXP Semiconductors PESDxS1UL series

Unidirectional ESD protection diodes

7. Application information

The PESDxS1UL series is designed for protection of one unidirectional data line from the

damage caused by ESD and surge pulses. The PESDxS1UL series may be used on lines

where the signal polarities are either positive or negative with respect to ground. The

PESDxS1UL series provides a surge capability of 150 W for an 8/20 s waveform.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the PESDxS1UL as close to the input terminal or connector as possible.

2. The path length between the PESDxS1UL and the protected lin e should be

minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer PCBs, use ground

vias.

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

Fig 10. Applicati on diagram

006aaa681

ground

line to be protected

(positive signal polarity)

PESDxS1UL

unidirectional protection of one line

ground

line to be protected

(negative signal polarity)

PESDxS1UL

Product data sheet Rev. 3 — 25 October 2011 10 of 15

NXP Semiconductors PESDxS1UL series

Unidirectional ESD protection diodes

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 11. Package outline SOD882

03-04-17Dimensions in mm

0.55

0.47

0.65

0.62

0.55 0.50

0.46

cathode marking on top side (if applicable)

1.02

0.95

0.30

0.22

0.30

0.22

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

10000

PESD3V3S1UL SOD882 4 mm pitch, 8 mm t ape and reel -315

PESD5V0S1UL

PESD12VS1UL

PESD15VS1UL

PESD24VS1UL

Product data sheet Rev. 3 — 25 October 2011 11 of 15

NXP Semiconductors PESDxS1UL series

Unidirectional ESD protection diodes

11. Soldering

Reflow soldering is the only recommended soldering method.

Fig 12. Reflow soldering footprint SOD882

solder lands

solder resist

occupied area

solder paste

sod882_fr

0.9

0.3

(2×)

R0.05 (8×)

0.6

(2×) 0.7

(2×)

0.4

(2×)

1.3

0.5

(2×)

0.8

(2×)

0.7

Dimensions in mm

Product data sheet Rev. 3 — 25 October 2011 12 of 15

NXP Semiconductors PESDxS1UL series

Unidirectional ESD protection diodes

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PESDXS1UL_SER v.3 20111025 Product data sheet - PESDXS1UL_SER v.2

Modifications: •Section 1.2 “Features and benefits”: updated

•Table 7: updated

•Table 8: added pulse conditions for breakdown voltage VBR

•Section 8 “Test in f ormation”: added

•Section 11 “Soldering”: added

•Section 13 “Legal information”: updated

PESDXS1UL_SER v.2 20090820 Product data sheet - PESDXS1UL_SER v.1

PESDXS1UL_SER v.1 20060331 Product data sheet - -

Product data sheet Rev. 3 — 25 October 2011 13 of 15

NXP Semiconductors PESDxS1UL series

Unidirectional ESD protection diodes

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full dat a

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

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Product specificat io n — The information and data provided in a Product

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NXP Semiconductors and its customer, unless NXP Semiconductors and

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deemed to off er functions and qualities beyond those described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

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profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

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contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconduct ors’ aggregate and cumulat ive liability toward s

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semicondu ctors.

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changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suit able for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environment al

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for il lustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyri ghts, patents or

other industrial or intellectual property right s.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from competent authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 3 — 25 October 2011 14 of 15

NXP Semiconductors PESDxS1UL series

Unidirectional ESD protection diodes

Quick reference data — The Quick reference dat a is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PESDxS1UL series

Unidirectional ESD protection diodes

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 25 October 2011

Document identifier: PESDXS1UL_SER

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 9

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Packing information . . . . . . . . . . . . . . . . . . . . 10

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

14 Contact information. . . . . . . . . . . . . . . . . . . . . 14

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15