Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. 3 1Publication Order Number:
NCV7701/D
NCV7701
2.0 Amp H−Bridge Driver
This automotive grade H−Bridge driver provides a flexible means
for controlling loads requiring bidirectional drive currents. Bridge
outputs are protected from overcurrent at each switch and
overtemperature shutdown provides product robustness. The
NCV7701 inputs can be interfaced to a range of voltages, including
vehicle battery voltage. The product features a low quiescent current
mode, allowing unswitched connection to the power source. The
NCV7701 is produced using ON Semiconductors POWERSENSE
BCD technology.
Features
Forward, Reverse, Brake High, Brake Low Modes
1.0 A Output Current Capability (DC)
Supply Voltage Range 7.0 V to 26 V
0.25 RDS(ON) per Driver @ 25°C
Sleep Mode (IQ < 10 µA)
Overvoltage Protection
Thermal Protection
Undervoltage Disable Function
Short Circuit Protection
Cross Conduction Protection
Synchronous Low−Side Rectification for Lower Power Dissipation
Diagnostic Output (Open Drain)
TTL/CMOS/Pull−Up to Battery Compatible Inputs
20 Lead SO Package with 8 Internally Fused Leads
Typical Applications
DC Motors
Stepper Motors
Modulator Valves
Device Package Shipping
ORDERING INFORMATION
NCV7701DW SO−20L 37 Units/Rail
NCV7701DWR2 SO−20L 1000 Tape & Reel
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
MARKING DIAGRAM
PIN CONNECTIONS
SO−20L
DW SUFFIX
CASE 751D
1
NCV7701
AWLYYWW
20
1
20
120
ENFAULT GNDGND GND
GND GND
GND GNDGND OUTAOUTB NCNC NCVBAT
IN1NC IN2NC
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For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NCV7701
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2
Figure 1. Block Diagram
EN
IN1
IN2
FAULT
Voltage
Reference
OUTB
OUTA
200 kHz
Oscillator Charge
Pumps
Gate
Drive
VBAT
Bridge
Control
Fault
Detection
TSD
OVSD
UVLO
ILIM ILIM
M1
M2
M3
M4
ILIM ILIM
GND
Masking
Timer
MAXIMUM RATINGS*
Rating Value Unit
Supply Voltage (DC) − VBAT (Note 1) −0.3 to 45 V
Logic Input Voltage (DC) −0.3 to 12 V
Junction Temperature Range −40 to 150 °C
Storage Temperature Range −65 to 150 °C
Peak Transient (1.0 ms rise time, 300 ms period, 31 V Load Dump @ VBAT = 14 V) (Note 1) 45 V
ESD Susceptibility (Human Body Model) 2.0 kV
Package Thermal Resistance
Junction−to−Case, RθJC
Junction−to−Ambient, RθJA 9.0
55 °C/W
°C/W
Lead Temperature Soldering: Reflow: (SMD styles only) (Note 2) 230 peak °C
*The maximum package power dissipation must be observed.
1. External reverse−battery and transient voltage suppression (TVS) required.
2. 60 second maximum above 183°C.
NCV7701
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ELECTRICAL CHARACTERISTICS (7.0 V VBAT 26 V, −40°C TJ 125°C; unless otherwise specified.) Note 3.
Characteristic Test Conditions Min Typ Max Unit
General
VBAT Quiescent Current:
Low Quiescent
Normal Operation EN = 0 V, VBAT 12.8 V
2.5 V EN VBAT, VBAT = 14 V
10
8.0 µA
mA
EN Logic Input
Low Level Input Voltage 0.7 V
High Level Input Voltage 2.5 V
Input Bias Current EN = 5.0 V 15 50 100 µA
Input Leakage Current EN = 0 V 1.0 µA
IN1, IN2, Logic Inputs
Low Level Input Voltage 0.8 V
High Level Input Voltage 2.0 V
Input Bias Current 5.0 V on Logic Input, EN = 5.0 V 5.0 20 40 µA
Input Leakage Current 0 V on Logic Input, EN = 0 V 1.0 µA
IC Protection
Overvoltage Shutdown 27 32 37 V
Overvoltage Hysteresis 0.2 0.5 1.0 V
Undervoltage Voltage Lockout 6.5 V
Undervoltage Hysteresis 100 200 400 mV
Thermal Shutdown (Guaranteed by Design) 160 185 210 °C
Thermal Hysteresis (Guaranteed by Design) 10 22.5 35 °C
Drivers OUTA, OUTB
Output High Voltage (VH) VBAT = 14 V, ISOURCE = 1.0 A, VH = VBAT − OUTX 0.4 0.75 V
Output Low Voltage (VL) VBAT = 14 V, ISOURCE = 1.0 A, VL = OUTX − VGND 0.4 0.75 V
Current Limit VBAT = 14 V 3.0 4.0 5.0 A
FAULT Output
Output Leakage Current VFAULT = 5.0 V, Fault Absent 10 µA
Output Low Voltage IFAULT = 0.5 mA, Fault Present 1.0 V
AC Characteristics
Output T urn−On Delay 5.0 10 µs
Output Turn−Off Delay 5.0 10 µs
Current Limit Mask Time 20 40 60 µs
3. Designed to meet these characteristics over the stated voltage and temperature ranges, though may not be 100% parametrically tested
in production.
NCV7701
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Table 1. H−Bridge Mode Control
EN IN1 IN2 H−Bridge OUTA OUTB
0 X X Off (Sleep Mode) Off Off
1 0 0 Brake Low Low Low
1 0 1 Forward High Low
1 1 0 Reverse Low High
1 1 1 Brake High High High
Table 2. Fault Diagnostics
Fault Condition Fault Pin H−Bridge
No Faults High Z Normal Operation
Undervoltage Low Off
Overvoltage Low Off
Thermal Shutdown Low Off
Current Limit Low 1 or more Drivers in
Current Limit
PACKAGE PIN DESCRIPTION
Pin No. Symbol Description
1 VBAT IC supply voltage.
2, 9, 10, 19, 20 NC No connection.
3 OUTB Bridge output.
4, 5, 6, 7, 14, 15, 16, 17 GND Power ground.
8 FAULT Diagnostic output.
11 IN2 Mode control input.
12 IN1 Mode control input.
13 EN Chip enable.
18 OUTA Bridge output.
Operating Description
During power up, the outputs are HI−Z regardless of the
input states. When the undervoltage lockout threshold is
exceeded, the outputs will reflect the input states. Outputs
change to HI−Z whenever an undervoltage, overvoltage or
thermal shutdown fault is detected. Normal operation will
resume when faults are resolved.
Overcurrent Protection
Current is monitored continuously in each switch of each
half bridge when the ENA input is in a high state thus
protecting each switch from faults due to short to GND,
short to VBAT or shorted load conditions. Only the affected
half−bridge is disabled for short to VBAT or short to GND
faults. A mask timer is initiated after a fault is detected and
prevents recognition of an overcurrent event until the mask
time expires. Persistence of an overcurrent condition causes
the bridge output to change to HI−Z and the FAULT output
to latch low until the next transition occurs on either the
input related to the faulted output or the ENA input is
brought low then high again. This method of protection
provides current limiting on a cycle−by−cycle basis and
helps allow a stall torque current to be ignored during motor
start. Continued overcurrent may eventually result in
activation of the thermal shutdown circuitry, thus activating
a second level of protection for the NCV7701.
NCV7701
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Figure 2. Application Diagram
VBAT
NC
OUTB
GND
GND
GND
GND
FAULT
NC
NC
NC
NC
OUTA
GND
GND
GND
GND
EN
IN1
IN2
NCV7701
+47 µF
VIGN
TVS
120
Controller
VCC
NCV7701
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6
PACKAGE DIMENSIONS
SO−20L
DW SUFFIX
CASE 751D−05
ISSUE F
20
1
11
10
B20X
H10X
C
L
18X A1
A
SEATING
PLANE
hX 45
E
D
M
0.25 M
B
M
0.25 S
AS
B
T
eT
B
A
DIM MIN MAX
MILLIMETERS
A2.35 2.65
A1 0.10 0.25
B0.35 0.49
C0.23 0.32
D12.65 12.95
E7.40 7.60
e1.27 BSC
H10.05 10.55
h0.25 0.75
L0.50 0.90
0 7
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION SHALL
BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT
MAXIMUM MATERIAL CONDITION.

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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
NCV7701/D
POWERSENSE is a trademark of Semiconductor Components Industries, LLC.
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