2007-08-16
BFY193
1
HiRel NPN Silicon RF Transistor
• HiRel Discrete and Microwave Semiconductor
• For low noise, high-gain amplifiers up to 2 GHz
• For linear broadband amplifiers
• Hermetically sealed microwave package
• fT = 8 GHz
F = 2.3 dB at 2 GHz
• esa Space Qualified
ESA/SCC Detail Spec. No.: 5611/006
Type Variant No. 06
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFY193 (ql) - 1=C 2=E 3=B 4=E - - MICRO-X1
(ql) Testing level: P: Professional testing
H: High Rel quality
S: Space quality
ES: ESA qualified
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 12 V
Collector-emitter voltage, VBE = 0 VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 2
Collector current IC80 mA
Base current IB101)
Total power dissipation
TS ≤ 104°C 2)3) Ptot 580 mW
Junction temperature T
j
200 °C
Operating temperature range To
p
-65 ... 200 °C
Storage temperature Tst
g
-65 ... 200 °C
1The maximum permissible base current for VFBE measurements is 30mA (spotmeasurement duration < 1s)
2At TS = 104°C. For TS > 104°C derating is required
3TS is measured on the collector lead at the soldering point to the pcb
2007-08-16
BFY193
2
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS < 165 K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Base-emitter forward voltage
IE = 30 mA, IC = 0 VFBE - - 1 V
Collector-emitter cutoff current
VCE = 12 V, IB = 0,5 µA2) ICEX - - 600 µA
Collector -base cutoff current
VCB = 20 V, IE = 0
VCB = 10 V, IE = 0
ICBO
-
-
-
-
100
0.05
µA
Emitter-base cutoff current
VEB = 2 V, IC = 0
VEB = 1 V, IC = 0
IEBO
-
-
-
-
25
0.5
DC current gain
IC = 30 mA, VCE = 8 V hFE 50 100 175 -
1TS is measured on the collector lead at the soldering point to the pcb
2This test assures V(BR)CE0 > 12V
2007-08-16
BFY193
3
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 40 mA, VCE = 5 V, f = 500 MHz
IC = 50 mA, VCE = 8 V, f = 500 MHz
fT
6.5
-
7.5
8
-
-
GHz
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz Ccb - 0.56 0.75 pF
Collector emitter capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz Cce - 0.34 -
Emitter-base capacitance
VEB = 0.5 V, VCB = vcb = 0, f = 1 MHz Ceb - 1.9 2.4
Noise figure
IC = 15 mA, VCE = 5 V, ZS = ZSopt ,
f = 2 GHz
F- 2.3 2.9 dB
Power gain1)
IC = 40 mA, VCE = 5 V, ZS = ZSopt ,
ZL = ZLopt , f = 2 GHz
Gma 12.5 13.5 -
Transducer gain
IC = 40 mA, VCE = 5 V, ZS = ZL = 50 Ω ,
f = 2 GHz
|S21e|28 9 - dB
Output power
IC = 50 mA, VCE = 5 V, PIN = 10 dBm,
ZS = ZL = 50 Ω , f = 2 GHz
POUT 16.5 17.5 - dBm
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
2007-08-16
BFY193
4
Micro-X1 Package
X Y
1.78
1.02
±0.1
0.1
ø1.65
±0.1
0.76
±0.25
1.05
GXM05552
1
2
3
4
-0.03
+0.05
-0.2
4.2
0.5
±0.1
2007-08-16
BFY193
5
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
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systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
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