APTGF90X60TE3 3 Phase bridge NPT IGBT Power Module VCES = 600V IC = 90A @ Tc = 80C Application * AC Motor control Features Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring * * * * * Benefits 17 * 16 15 20 14 21 13 1 2 3 4 5 6 7 8 9 10 11 12 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area * * * * * * * Outstanding performance at high frequency operation Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile TC = 25C Max ratings 600 130 90 230 20 430 Tj = 125C 200A@520V TC = 25C TC = 80C TC = 25C Unit V A July, 2003 18 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-3 APTGF90X60TE3 - Rev 0 19 APTGF90X60TE3 ICES All ratings @ Tj = 25C unless otherwise specified Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGE = 0V, IC = 500A Tj = 25C VGE = 0V VCE = 600V Tj = 125C T j = 25C VGE =15V IC = 100A Tj = 125C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Min 600 Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 100A RG = 2.2 Inductive Switching (125C) VGE = 15V VBus = 300V IC = 100A RG = 2.2 Min 1.7 Typ Max 1 1 2.0 2.2 500 4.5 Typ 4300 400 25 10 130 2.45 6.5 400 V nA Max Unit pF ns 25 11 ns 150 30 2.9 Symbol Characteristic VF Diode Forward Voltage Er Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions IF = 100A VGE = 0V IF = 100A VR = 300V di/dt =800A/s IF = 100A VR = 300V di/dt =800A/s Tj = 25C Tj = 125C Min Typ 1.25 1.2 Tj = 125C 3.2 Tj = 25C 7 Tj = 125C 12 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25C B 25/50 T25 = 298.16 K RT = Min R25 exp B25 / 50 1 1 - T25 T V 20 Turn off Energy Reverse diode ratings and characteristics Unit V A mA Typ 5 3375 mJ Max 1.6 Unit V mJ C Max Unit k K July, 2003 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage T: Thermistor temperature RT: Thermistor value at T APT website - http://www.advancedpower.com 2-3 APTGF90X60TE3 - Rev 0 Electrical Characteristics APTGF90X60TE3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To heatsink Package Weight Min IGBT Diode Typ Max 0.29 0.55 2500 M5 -40 -40 -40 3 Unit C/W V 150 125 125 4.5 300 C N.m g Package outline PIN 1 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 3-3 APTGF90X60TE3 - Rev 0 July, 2003 PIN 21