RF Products
Selection Guide
1 MHz 600 960 1800 2200 2700 3800 6000
1
NXP Semiconductors
RF Product Selector Guide
RF Product
Selector Guide
The global leader in RF innovation and technology for more
than 60 years, NXP offers RF power transistors for
communication and industrial applications serving these
markets:
wireless infrastructure
industrial, scientific, medical (ISM) and broadcast
2--way radio
aerospace and defense
cooking
low power
With products ranging from 1.8 mW to 1.5 kW and from DC to
6000 MHz, using LDMOS and GaN as well as GaAs and SiGe
technologies, NXP offers the broadest portfolio of RF power
transistors.
How to Use This Selector Guide
Download this selector guide’s PDF file (SG46 R43) from
www.nxp.com/RFSelectorGuide.
Using the color bar below, click the frequency band of your
choice to view our list of recommended RF power transistors.
p. 5p. 7p. 10 p. 11p. 14 p. 16 p. 17
Using the RF Power Product Portfolio graphical representation
that begins on p. 5, choose a part with the desired output power
and frequency, and click that product’s corresponding page
number to be taken to parametric information for that part.
Table of Contents
Page
On--Line Access to NXP Semiconductor Data 3..........
RF Power Product Portfolio 5..........................
RF Cellular Infrastructure 18...........................
450–1000 MHz 18.................................
1450–2200 MHz 19................................
2300–2690 MHz 21................................
3400–3800 MHz 22................................
RF ISM and Broadcast 23.............................
Wideband GaN — 1–2500 MHz 23..................
Wideband LDMOS — 1–2000 MHz 23...............
ISM and Broadcast LDMOS — 1–600 MHz 23........
UHF Broadcast LDMOS — 470–860 MHz 24.........
ISM LDMOS — 700–1300 MHz 24..................
ISM LDMOS — 2400–2500 MHz 24.................
RF Mobile Radio and General Purpose Drivers 25........
7–12 V LDMOS — 1–1000 MHz 25..................
RF Military 26.......................................
General Purpose Driver ICs 26......................
General Purpose Driver Transistors 26...............
Radar 26........................................
Radio Communications 28..........................
RF Commercial Aerospace 29.........................
L--Band LDMOS — 960--1400 MHz 29...............
S--Band LDMOS — 2700--2900 MHz 29..............
RF Cooking 30......................................
915 MHz 30......................................
2450 MHz 30.....................................
RF Low Power 31....................................
RF General Purpose Amplifiers 32...................
RF Linear Amplifiers 33............................
RF Low Noise Amplifiers 34........................
RF Control Circuits 35.............................
ADAM (Advanced Doherty Alignment Module) 35...
Digital Step Attenuator 35........................
RF High Power Switch 35........................
RF GaAs Linear Power Transistors 36...............
Linear Transistors — To 5000 MHz 36.............
RF Packages 37.....................................
Tape and Reel Specifications 40.......................
Applications and Product Literature 42..................
Selector Guide Product Index 43.......................
2016 NXP B.V.
2
NXP Semiconductors
RF Product Selector Guide
3
NXP Semiconductors
RF Product Selector Guide
Access Data On--Line
Available online are part number search, the product
library, documentation library, software and tools library,
application sites, product sites, sales and support, training
and where to buy at the following URL:
http://www.nxp.com.
See the RF Design Resources at
http://www.nxp.com/RFpower and
http://www.nxp.com/RFlowpower for specific RF
product support information for:
Data sheets
Applications notes
Selector guide
Packaging information
Application information
Models
MTTF calculators
.s2p Files
Events
RF Product Selector
Design Tools and Data Available
On--Line for Your Design--in Process
RF High Power Models
NXP continues to populate its RF High Power
Model Library with FET2, MET and Root models. All
product models available in the RF High Power Model
Library (FET2, MET and Root) include package, bond
wire and internal matching network effects.
The FET2and MET models for RF High Power
transistors and RF ICs are nonlinear models that
examine both electrical and thermal phenomena and
can account for dynamic self--heating effects of device
performance. They are specifically tailored to model
high power RF transistors and RF ICs used in wireless
base station applications.
Implemented in the Keysight Advanced Design
System and AWR Microwave Office,theFET
2and
MET models are capable of performing small--signal,
large--signal, harmonic-- balance, noise and transient
simulations. Because of their ability to simulate
self--heating effects, the FET2and MET models are
more accurate than existing models, enabling circuit
designers to predict prototype performance more
accurately and reduce design cycle time.
The current release of the FET2and MET models
are available for these tools:
Agilent EEsof ADS nonlinear circuit simulator
AWR Microwave Office
The RF High Power Model Library is available for
all major computer platforms supported by these
simulators.
For more information and latest releases
supported, go to http://www.nxp.com/RF/models.
RF Power Electromigration MTTF
Calculation Program
Program Functionality
This MTTF/FIT calculator software is designed to
assist our customers in estimating the LDMOS device
reliability in terms of electromigration wear--out failures.
The program evaluates LDMOS device
Mean--Time--To--Failure (MTTF) using Black’s
Equations. It also estimates the Failures--in--Time (FIT)
value at the expected base transceiver system (BTS)
life span.
About the Program
This program is designed for estimating LDMOS
device electromigration failure rate. According to
electromigration theory, there are two wear--out modes
for silicon components employing aluminum as a
metallization material:
The formation of an electrically open circuit due to
the condensation of vacancies in the aluminum to
form voids.
The growth of etch--pits into silicon by the dissolu-
tion of silicon into aluminum (to short out an under-
lying junction).
The program also estimates the FIT value at the
expected base BTS life span. The calculation requires
input for the drain voltage, drain currents, case
temperature, RF input/output power and expected BTS
life.
MTTF Calculator Availability
RF Power MTTF calculators are being added to the
NXP web site for all RF Power LDMOS discrete
transistor and IC devices. MTTF calculators are
available at http://www.nxp.com/RF/calculators.
4
NXP Semiconductors
RF Product Selector Guide
5
NXP Semiconductors
RF Product Selector Guide
RF Power Product Portfolio
Choose the output power and frequency range needed to meet the design requirements for your end application.
Table 1. RF Power Products — 1–600 MHz
Output
Power
(W) Product
Go to
page
1500 1.8 500 MRF1K50N 23
1500 1.8 500 MRF1K50H 23
1250 1.8 600 MRFE6VP61K25N 23
1250 1.8 600 MRFE6VP61K25H 23
800 470 860 MRFE8VP8600H 24
600 470 860 MRFE6VP8600H 24
600 1.8 600 MRFE6VP5600H 23
600 1.8 600 MRFE6VP6600N 23
450 470 860 MRF6VP3450H 24
300 1.8 600 MRFE6VP6300H 23
300 1.8 600 MRFE6VP5300N 23
250 12700 MMRF5021H 28
150 1.8 600 MRFE6VP5150N 23
125 12700 MMRF5014H 28
125 12700 MMRF5015N 28
100 1.8 600 MRFE6VP100H 23
100 12500 AFG24S100H 23
90 470 1215 MRF6VP3091N 24
90 470 1215 MRF6V3090N 24
70 136 520 AFT05MP075N 25
63 12700 MMRF5023N 28
60 470 960 MRFE6S9060N 18, 24, 25
31 136 520 AFT05MS031N 25
25 1.8 2000 MRFE6VS25L 23
25 1.8 2000 MRFE6VS25N 23, 29
Go to Low Power Pre--drivers
1MHz 100 200 300 400 500 600 Higher
Bold = In NXP Product Longevity program
(continued)
GaN
28–32 V LDMOS
7.2–12.5 V LDMOS
GaAs
Plastic
48–50 V LDMOS
6
NXP Semiconductors
RF Product Selector Guide
RF Power Product Porfolio (continued)
Table 1. RF Power Products — 1–600 MHz (continued)
Output
Power
(W) Product
Go to
page
25 13000 MMRF5019N 28
16 136 941 AFT09MS015N 25
12 13000 MMRF5013N 28
12 13000 MMRF5011N 28
10 1.8 600 MRF6V2010N 23
10 450 1500 MW6S010N 18, 19
7.3 136 941 AFT09MS007N 25
6136 941 AFT05MS006N 25
6136 941 AFM906N 25
41.8 941 AFT05MS004N 25
4 1 2000 MW6S004N 18, 19
31.8 941 AFT05MS003N 25
11.8 941 AFIC901N 25
Go to Low Power Pre--drivers
1MHz 100 200 300 400 500 600 Higher
Bold = In NXP Product Longevity program
GaN
28–32 V LDMOS
7.2–12.5 V LDMOS
GaAs
Plastic
48–50 V LDMOS
7
NXP Semiconductors
RF Product Selector Guide
RF Power Product Porfolio (continued)
Table 2. RF Power Products — 600–960 MHz
Output
Power
(W) Product
Go to
page
800 470 860 MRFE8VP8600H 24
600 470 860 MRFE6VP8600H 24
500 720 960 AFV09P350-04N* 19
450 470 860 MRF6VP3450H 24
400 720 960 A2V09H300--04N* 19
400 716 960 A2T09D400--23N 19
390 920 960 AFT09H310-03S* 19
350 700 1300 MRF8VP13350N 24, 25
330 716 960 A2T07H310-24S* 19
340 750 820 MRF8P8300H 18
326 920 960 MRF8P9300HS 19
280 720 960 AFT09S282N 18
260 720 960 MRF8S9260HS 18
260 728 768 MRF8S7235N 18
250 716 960 A2T09VD300N 18
250 12700 MMRF5021H 28
250 12700 MMRF5023N 28
240 716 960 A2T09VD250N 18
230 865 960 MRF8S9232N 18
220 920 960 MRF8S9220HS 18
220 850 960 AFT09S220-02N 18
200 920 960 MRF8S9202GN 18
200 920 960 MRF8S9200N 18
200 716 960 AFT09S200W02N 18
193 920 960 MRF8P9210N 18
182 618 803 MRF8S7170N 18
186 716 960 A2T07D160W04S 18
MMICs!A1 Go to Low Power Pre-drivers
Lower 600 700 800 900 960 Higher
Bold = In NXP Product Longevity program
(continued) * Output Power measured at P3dB
GaN
28–32 V LDMOS
7.2–12.5 V LDMOS
GaAs
Plastic
48–50 V LDMOS
8
NXP Semiconductors
RF Product Selector Guide
RF Power Product Porfolio (continued)
Table 2. RF Power Products — 600–960 MHz (continued)
Output
Power
(W) Product
Go to
page
177 920 960 MRF8S9170N 18
160 865 960 MRFE6S9160HS 18
148 920 960 AFT09S200W02S 18
125 865 960 MRFE6S9125N 18
125 728 768 MRF8S7120N 18
125 12700 MMRF5014H 28
125 12700 MMRF5015N 28
120 865 960 MRF8S9120N 18
112 865 960 MWE6IC9100NB 18
100 1.8 2000 MRFE6VP100H 23
100 865 960 MRF8S9102N 18
100 920 960 MRF8S9100HS 18
100 12500 AFG24S100H 23
90 470 1215 MRF6V3090N 24
90 470 1215 MRF6VP3091N 24
90 865 960 MWE6IC9080NB 18
80 869 960 MRF5S9080NB 18
79 850 960 MD8IC970N 18, 25
60 470 960 MRFE6S9060N 18, 24, 25
57 764 941 AFT09MP055N 25
56 728 960 A2I08H040N* 18
54 850 960 AFT09S220--02N 18
45 920 960 MRFE6S9046GN 18
45 865 960 MRFE6S9045N 18
42 728 960 MRF8P9040N 18
MMICs!A1 Go to Low Power Pre-drivers
Lower 600 700 800 900 960 Higher
Bold = In NXP Product Longevity program
(continued) * Output Power measured at P3dB
GaN
28–32 V LDMOS
7.2–12.5 V LDMOS
GaAs
Plastic
48–50 V LDMOS
9
NXP Semiconductors
RF Product Selector Guide
RF Power Product Porfolio (continued)
Table 2. RF Power Products — 600–960 MHz (continued)
Output
Power
(W) Product
Go to
page
31 764 941 AFT09MS031N 25
31 728 960 MW7IC930N 18
26 728 960 MD8IC925N 18
25 1.8 2000 MRFE6VS25L 23
25 1.8 2000 MRFE6VS25N 23, 29
25 13000 MMRF5019N 28
19 728 960 A2T08VD020N 18
19 728 960 A2T08VD020N 18
16 136 941 AFT09MS015N 25
15 728 960 MW7IC915N 18
12 13000 MMRF5013N 28
12 13000 MMRF5011N 28
10 450 1500 MW6S010N 18, 19
10 728 3600 AFT27S010N 18, 22
9728 960 A2I08H040N* 18
7136 941 AFT09MS007N 25
6136 941 AFT05MS006N 25
6136 941 AFM906N 25
6728 3600 AFT27S006N 18, 22
41.8 941 AFT05MS004N 25
4 1 2000 MW6S004N 18, 19
31.8 941 AFT05MS003N 25
11.8 941 AFIC901N 25
MMICs!A1 Go to Low Power Pre-drivers
Lower 600 700 800 900 960 Higher
Bold = In NXP Product Longevity program
* Output Power measured at P3dB
GaN
28–32 V LDMOS
7.2–12.5 V LDMOS
GaAs
Plastic
48–50 V LDMOS
10
NXP Semiconductors
RF Product Selector Guide
RF Power Product Porfolio (continued)
Table 3. RF Power Products — 960–1800 MHz
Output
Power
(W) Product
Go to
page
1500 1030 1090 MMRF1317H* 27
1000 960 1215 AFV121KH 29
1000 1200 1400 AFV141KH 29
500 960 1215 MRF6V12500H 29
350 700 1300 MRF8VP13350N 24, 25
330 1200 1400 MRF6V14300H 29
275 960 1215 MRF6V12250H 29
250 978 1090 AFIC10275N 29
250 12700 MMRF5021H 28
125 12700 MMRF5014H 28
125 12700 MMRF5015N 28
100 1.8 2000 MRFE6VP100H 23
100 12500 AFG24S100H 23
90 470 1215 MRF6VP3091N 24
90 470 1215 MRF6V3090N 24
63 12700 MMRF5023N 28
25 1.8 2000 MRFE6VS25L 23
25 1.8 2000 MRFE6VS25N 23, 29
25 13000 MMRF5019N 28
12 13000 MMRF5013N 28
12 13000 MMRF5011N 28
10 960 1400 MRF6V10010N 29
10 450 1500 MW6S010N 18, 19
10 728 3600 AFT27S010N 18, 22
6728 3600 AFT27S006N 18, 22
4 1 2000 MW6S004N 18, 19
Go to Low Power Pre-drivers
Lower 960 1090 1215 1400 1800 Higher
Bold = In NXP Product Longevity program
* Output Power measured at P3dB
GaN
28–32 V LDMOS
7.2–12.5 V LDMOS
GaAs
Plastic
48–50 V LDMOS
11
NXP Semiconductors
RF Product Selector Guide
RF Power Product Porfolio (continued)
Table 4. RF Power Products — 1800–2200 MHz
Output
Power
(W) Product
Go to
page
589 1805 1880 A2T18H455W23N* 20
550 1805 1880 A2T18H450W19S* 20
525 2110 2200 A2T21H450W19S* 21
480 1805 1995 AFT18H356-24S* 20
457 1805 1880 A2T18H410-24S* 20
447 2110 2170 A2T21H410--24S* 20
400 1805 1880 AFT18HW355S* 20
400 2110 2170 AFT21H350W03S* 21
400 2110 2170 A2T21H360--24S* 21
394 1805 1880 AFT18P350-4S2L* 20
383 1880 2025 A2T20H330W24N* 20
380 1880 2025 A2T20H330W24S* 20
373 2110 2200 A2T21H360--23N* 21
320 1805 1995 AFT18H357-24S* 20
316 1805 1880 AFT18H357-24N* 20
280 1805 1880 A2T18S260W12N 19
263 1805 1995 AFT18S290--13S 20
260 1805 1880 MRF8S18260HS 19
230 2110 2170 AFT21S240-12S 21
229 1805 1995 AFT18S260W31S 20
210 1805 1995 MRF8S18210WHS 20
209 2110 2170 AFT21S220W02S 20
208 2110 2170 A2T21S260--12S 21
207 1805 1880 AFT18S230S 19
204 1805 1880 AFT18S230-12N 19
200 1880 2025 A2T20H160W04N* 20
195 1805 2200 A2G22S251--01S* 21
Go to GaAs MMICs Pre-drivers
Lower 1800 1900 2000 2100 2200 Higher
(continued) * Output Power measured at P3dB
GaN
28–32 V LDMOS
7.2–12.5 V LDMOS
GaAs
Plastic
48–50 V LDMOS
12
NXP Semiconductors
RF Product Selector Guide
RF Power Product Porfolio (continued)
Table 4. RF Power Products — 1800–2200 MHz (continued)
Output
Power
(W) Product
Go to
page
190 1930 1995 MRF8P20165WH* 20
182 2110 2170 AFT21S232S 21
182 1805 1880 A2T18H160-24S* 19
182 2110 2170 AFT21S230-12S 20
182 2110 2170 AFT21S230S 20
178 2110 2170 MRF8S21200HS 20
170 1880 2025 MRF8P20140WH* 20
170 1930 1990 MRF7S19170HS 20
170 1805 2025 AFT20P140--4WN* 20
160 1800 2200 A2G22S160-01S* 20
160 1880 2025 MRF8P20160H* 20
150 2110 2170 MRF7S21150HS 20
147 1880 1920 MRF8P20161HS* 20
140 1930 1990 MRF6S19140HS 20
140 2110 2170 A2T21S160--12S 20
129 1805 1880 A2T18S162W31S 19
129 1805 1995 A2T18S160W31S 20
126 1805 2025 MRF8P20100HS* 20
120 1805 1880 MRF8S18120HS 19
112 2110 2170 AFT21S140W02S 20
112 2110 2200 A2T21H100-25S* 20
112 1805 1995 A2T18H100--25S* 20
107 2110 2170 MRF8S21120HS 20
100 2110 2170 MRF8S21100HS 20
100 2110 2170 MRF8HP21080H* 20
90 1800 2200 A2I20H080N* 19
80 2110 2170 MRF7S21080HS 20
Go to GaAs MMICs Pre-drivers
Lower 1800 1900 2000 2100 2200 Higher
(continued) * Output Power measured at P3dB
GaN
28–32 V LDMOS
7.2–12.5 V LDMOS
GaAs
Plastic
48–50 V LDMOS
13
NXP Semiconductors
RF Product Selector Guide
RF Power Product Porfolio (continued)
Table 4. RF Power Products — 1800–2200 MHz (continued)
Output
Power
(W) Product
Go to
page
74 1800 2200 A2I20H060N* 19
60 1805 2170 AFT20P060-4N 20
60 1800 2000 MRF6S18060N 20
54 2110 2170 MD7IC2250NB 19
50 2010 2025 MRF7P20040H* 20
44.7 1800 2200 A2I22D050N 19
45 1400 2200 A2I20D040N 19
40 2110 2170 MD7IC2251N 19
40 1920 2000 MW6IC1940NB 19
40 2110 2170 MW7IC2240N 19
30 1930 1990 MW7IC2040N 19
20 2110 2170 MW7IC2220N 19
20 1805 2170 MW7IC2020N 19
16.2 1805 2700 AFT20S015N 19, 21
16 1400 2200 A2I20D020N 19
12 1805 2170 MD7IC2012N 19
12 1805 2170 MD7IC1812N 19
10 1600 2200 MRF6S20010N 19
10 728 3600 AFT27S010N 18, 22
6728 3600 AFT27S006N 18, 22
4 1 2000 MW6S004N 18, 19
Go to GaAs MMICs Pre-drivers
Lower 1800 1900 2000 2100 2200 Higher
* Output Power measured at P3dB
GaN
28–32 V LDMOS
7.2–12.5 V LDMOS
GaAs
Plastic
48–50 V LDMOS
14
NXP Semiconductors
RF Product Selector Guide
RF Power Product Porfolio (continued)
Table 5. RF Power Products — 2200–2700 MHz
Output
Power
(W) Product
Go to
page
410 2300 2400 A2T23H300--24S* 21
363 2496 2690 A2T26H300-24S* 21
320 2496 2690 AFT26H250W03S* 21
320 2496 2690 AFT26H250-24S* 21
300 2400 2500 MRF24300N 24
290 2300 2400 AFT23H200--4S2L* 21
280 2496 2690 AFT26H200W03S* 21
250 2400 2500 MRF7S24250N 24
203 2300 2400 AFT23H160--25S* 21
200 2496 2690 AFT26H160-4S4* 21
191 2496 2690 A2T26H165--24S* 21
190 2300 2400 MRF8P23160WHS* 21
178 2496 2690 A2T26H160-24S* 21
178 2300 2400 A2T23H160-24S* 21
155 2300 2400 AFT23S160W02S 21
147 2300 2400 AFT23S170-13S 21
140 2400 2500 MRF6S24140HS 24
130 2500 2700 MRF7S27130HS 21
125 12700 MMRF5014H 28
125 12700 MMRF5015N 28
125 2496 2690 AFT26P100--4WS* 21
100 12700 AFG24S100H 23
100 2300 2400 MRF8P23080HS* 21
83 2500 2700 MRF8P26080HS* 21
63 12700 MMRF5023N 28
57 2300 2690 A2I25H060N* 21
54 2496 2690 AFT26HW050S* 21
Go to Low Power Pre-drivers
Lower 2300 2400 2500 2600 2700 Higher
Bold = In NXP Product Longevity program
(continued) * Output Power measured at P3dB
GaN
28–32 V LDMOS
7.2–12.5 V LDMOS
GaAs
Plastic
48–50 V LDMOS
15
NXP Semiconductors
RF Product Selector Guide
RF Power Product Porfolio (continued)
Table 5. RF Power Products — 2200–2700 MHz (continued)
Output
Power
(W) Product
Go to
page
54 2496 2690 AFT26H050W26S* 21
30 2500 2700 MD7IC2755N 21
25 2500 2700 MW7IC2725N 21
25 2400 2500 MW7IC2425NB 24
24 2100 2900 A2I25D025N 21
16.2 1805 2700 AFT20S015N 19, 21
15.5 2300 2690 A2I25D012N 21
15 2300 MRF6S27015N 21
250 1 MMRF5021H 28
12 11111 3000MMRF5019N 28
12 1MMRF5013N 28
12 13000 MMRF5011N 28
10 728 3600 AFT27S010N 18, 22
6728 3600 AFT27S006N 18, 22
Go to Low Power Pre-drivers
Lower 2300 2400 2500 2600 2700 Higher
Bold = In NXP Product Longevity program
GaN
28–32 V LDMOS
7.2–12.5 V LDMOS
GaAs
Plastic
48–50 V LDMOS
3000
1
2700
2700
16
NXP Semiconductors
RF Product Selector Guide
RF Power Product Porfolio (continued)
Table 6. RF Power Products — 2700–3800 MHz
Output
Power
(W) Product
Go to
page
320 2700 2900 MRF8P29300H 29
225 3400 3600 A2G35S200--01S* 22
162 3400 3600 A2G35S160--01S* 22
65 3400 3800 A2I35H060N* 22
60 2700 3500 MMRF5300N 27
24 2100 2900 A2I25D025N 21
10 728 3600 AFT27S010N 18, 22
6728 3600 AFT27S006N 18, 22
Go to Low Power Pre-drivers
Lower 2700 2900 3100 3300 3500 3600 3800 Higher
Bold = In NXP Product Longevity program
* Output Power measured at P3dB
GaN
28–32 V LDMOS
7.2–12.5 V LDMOS
GaAs
Plastic
48–50 V LDMOS
17
NXP Semiconductors
RF Product Selector Guide
RF Power Product Porfolio (continued)
Table 7. RF Power Products — Low Power Pre--drivers
Output
Power
(dBm) Product
Go to
page
33 1500 2700 MMZ25332B4 33
33 1500 2800 MMZ25332B 33
33 400 2400 MMG3006N 32
33 1500 2700 MMZ25333B 33
32.8 130 1000 MMZ09332B 33
32.2 1500 2700 MMZ27333B 33
31 2300 2700 MMA25312B 33
30.5 1800 2200 MMA20312B 33
30.5 1800 2200 MMA20312BV 33
30 500 5000 MRFG35010AN 36
30 800 2200 MMG3005N 32
29.6 400 1000 MMZ09312B 33
27 400 2200 MMG3004N 32
26.9 900 4300 MMG30271B 32
26.5 500 5000 MRFG35005AN 36
26.5 500 5000 MRFG35003N6A 36
25 40 4000 MMG3014N 32
24 500 2800 MMG15241H 32
24 40 3600 MMG3003N 32
23.9 450 3800 MMG20241H 32, 34
20.5 16000 MMG3H21N 32
20.5 16000 MMG3015N 32
18.5 16000 MMG3012N 32
13.4 16000 MMG38151B 32
1 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000
GaN
28–32 V LDMOS
7.2–12.5 V LDMOS
GaAs
Plastic
48–50 V LDMOS
18
NXP Semiconductors
RF Product Selector Guide
RF Cellular Infrastructure
The NXP RF cellular infrastructure high power portfolio offers a full lineup of LDMOS and GaN power transistors and solutions
for base stations and wireless infrastructure applications. Devices are designed for 450–1000 MHz, 1450–2200 MHz,
2300–2690 MHz and 3400–3800 MHz frequency operation, supporting cellular standards such as LTE, W--CDMA/UMTS, GSM,
EDGE, CDMA and TD--SCDMA.
Table 1. 450–1000 MHz
Product
Frequency
Band(3)
MHz
Pout
(Typ)
Watts
Test
Signal
VDD
Volts
Gain
(Typ)/Freq.
dB/MHz
Eff.
(Typ)
%
JC
C/W Packaging
MW6S004NT1 U1–2000 4 PEP 2--Tone 28 18/1960 33 8.8 PLD--1.5
AFT27S006NT1 U728–3600 0.76 Avg. W--CDMA 28 22.5/2170 20.2 3.4 PLD--1.5W
AFT27S010NT1 U728–3600 1.26 Avg. W--CDMA 28 21.7/2170 22.6 3.5 PLD--1.5W
MW6S010NR1 U450–1500 10 PEP 2--Tone 28 18/960 32 2.85 TO--270--2
MW6S010GNR1 U450–1500 10 PEP 2--Tone 28 18/960 32 2.85 TO--270G--2
MW7IC915NT1 I865–895 1.6 Avg. W--CDMA 28 38/880 17.4 3.2 PQFN 8 8
A2T08VD020NT1I728–960 2Avg. W--CDMA 48 19.1/960 21.1 3.7 PQFN 8 8
MD8IC925NR1 I/O 728–960 2.5 Avg. W--CDMA 28 36.2/940 17.4 1.8 TO--270WB--14
MD8IC925GNR1 I/O 728–960 2.5 Avg. W--CDMA 28 36.2/940 17.4 1.8 TO--270WBG--14
MW7IC930NR1 I/O 920–960 3.2 Avg. W--CDMA 28 35.9/940 16.5 1.6 TO--270WBL--16
MW7IC930GNR1 I/O 920–960 3.2 Avg. W--CDMA 28 35.9/940 16.5 1.6 TO--270WBLG--16
MW7IC930NBR1 I/O 920–960 3.2 Avg. W--CDMA 28 35.9/940 16.5 1.6 TO--272WB--16
A2I08H040NR1I728–960 9Avg. W--CDMA 28 30.7/920 45.9 3.4 TO--270WB--15
A2I08H040GNR1I728–960 9Avg. W--CDMA 28 30.7/920 45.9 3.4 TO--270WBG--15
MRF8S7120NR3 I/O 728–768 32 Avg. W--CDMA 28 19.2/768 38.1 0.65 OM--780--2L
MRF8S7170NR3 I/O 728–768 50 Avg. W--CDMA 28 19.5/748 37 0.37 OM--780--2L
MRF8S7235NR3 I/O 728–768 63 Avg. W--CDMA 28 20/728 36.1 0.33 OM--780--2L
MRF8P8300HR6 I/O 790–820 96 Avg. W--CDMA 28 20.9/820 35.7 0.26 NI--1230H--4S
MRF8P8300HSR6 I/O 790–820 96 Avg. W--CDMA 28 20.9/820 35.7 0.26 NI--1230S--4S
MRFE6S9045NR1 U865–895 10 Avg. N--CDMA 28 22.1/880 32 1.1 TO--270--2
MRFE6S9060NR1 U865–895 14 Avg. N--CDMA 28 21.4/880 32.1 0.88 TO--270--2
MRFE6S9125NR1 I865–895 27 Avg. N--CDMA 28 20.2/880 31 0.45 TO--270WB--4
MRFE6S9125NBR1 I865–895 27 Avg. N--CDMA 28 20.2/880 31 0.45 TO--272WB--4
MD8IC970NR1 I/O 850–940 35 Avg. 2--Tone 28 32.6/940 42.1 0.6 TO--270WBL--16
MD8IC970GNR1 I/O 850–940 35 Avg. 2--Tone 28 32.6/940 42.1 0.6 TO--270WBLG--16
MRF8P9040NR1 I728–960 4Avg. W--CDMA 28 19.9/960 19.1 1.5 TO--270WB--4
MRF8P9040GNR1 I728–960 4Avg. W--CDMA 28 19.9/960 19.1 1.5 TO--270WBG--4
MRFE6S9046GNR1 I/O 920–960 35.5 CW CW 28 19/960 57 1.3 TO--270WBG--4
MWE6IC9080NBR1 I/O 865–960 80 CW CW 28 28.5/960 52.3 0.52 TO--272WB--14
MRF5S9080NBR1 I869–960 80 CW CW 26 18.5/960 60 0.5 TO--272WB--4
MWE6IC9100NBR1 I869--960 100 CW CW 26 33.5/960 54 0.38 TO--272WB--14
MRF8S9100HSR3 I920–960 72 CW CW 28 19.3/920 51.6 0.65 NI--780S--2L
MRF8S9102NR3 I/O 865–960 28 Avg. W--CDMA 28 23.1/920 36.4 0.63 OM--780--2L
MRF8S9120NR3 I/O 865–960 33 Avg. W--CDMA 28 19.8/960 34.2 0.62 OM--780--2L
A2T07D160W04SR3 I/O 716–960 30 Avg. W–CDMA 28 21.5/803 48.5 0.63 NI--780S--4L
MRFE6S9160HSR3 I865–960 35 Avg. N--CDMA 28 21/880 31 0.33 NI--780S--2L
MRF8S9170NR3 I/O 920–960 50 Avg. W--CDMA 28 19.3/920 36.5 0.38 OM--780--2L
AFT09S200W02NR3 I/O 716–960 56 Avg. W--CDMA 28 19.2/960 36.5 0.35 OM--780--2L
AFT09S200W02GNR3 I/O 716–960 56 Avg. W--CDMA 28 19.2/960 36.5 0.35 OM--780G--2L
AFT09S200W02SR3 I/O 920–960 56 Avg. W--CDMA 28 19.4/960 35.6 0.34 NI--780S--2L
MRF8S9200NR3 I/O 920–960 58 Avg. W--CDMA 28 19.9/940 37.1 0.30 OM--780--2L
MRF8S9202GNR3 I/O 865–960 58 Avg. W--CDMA 28 19.0/920 36.3 0.31 OM--780G--2L
MRF8P9210NR3 I/O 920–960 63 Avg. W--CDMA 28 16.7/960 47.4 0.53 OM--780--4L
AFT09S220--02NR3I/O 850–960 54 Avg. W--CDMA 28 19.5/920 35.8 0.3 OM--780--2L
MRF8S9220HSR3 I/O 920–960 65 Avg. W--CDMA 28 19.4/960 35.7 0.39 NI--780S--2L
MRF8S9232NR3 I/O 865–960 63 Avg. W--CDMA 28 18.1/960 36.3 0.27 OM--780--2L
A2T09VD250NR1I716–960 65 Avg. W--CDMA 48 22.5/920 34.8 0.56 TO--270WB--6A
MRF8S9260HSR3 I/O 920–960 75 Avg. W--CDMA 28 18.6/960 38.5 0.37 NI--880S--2L
AFT09S282NR3 I/O 720–960 80 Avg. W--CDMA 28 20/960 36.1 0.31 OM--780--2L
A2T09VD300NR1I716–960 79 Avg. W--CDMA 48 21.5/920 34.4 0.66 TO--270WB--6A
(3)U = Unmatched; I = Input; I/O = Input/Output.
New Product
19
NXP Semiconductors
RF Product Selector Guide
RF Cellular Infrastructure (continued)
Table 1. 450–1000 MHz (continued)
Product
Frequency
Band(3)
MHz
Pout
(Typ)
Watts
Test
Signal
VDD
Volts
Gain
(Typ)/Freq.
dB/MHz
Eff.
(Typ)
%
JC
C/W Packaging
A2V09H300--04NR3I/O 720–960 79 Avg. W--CDMA 48 19.7/940 55.9 0.34 OM--780--4L
A2T09D400--23NR6I/O 716–960 93 Avg. W--CDMA 28 17.9/836 48 0.29 OM--1230--4L2S
MRF8P9300HSR6 I/O 920–960 100 Avg. W--CDMA 28 19.4/960 35.8 0.22 NI--1230S--4S
A2T07H310--24SR6 I/O 716–960 47 Avg. W--CDMA 28 18.6/880 51.3 0.36 NI--1230S--4L2L
AFT09H310--03SR6 I/O 920–960 56 Avg. W--CDMA 28 17.9/920 47.4 0.41 NI--1230S--4S
AFT09H310--04GSR6 I/O 920–960 56 Avg. W--CDMA 28 17.9/920 47.4 0.41 NI--1230GS--4L
AFV09P350--04NR3 I/O 720–960 100 Avg. W--CDMA 48 19.5/920 48.5 0.45 OM--780--4L
AFV09P350--04GNR3 I/O 720–960 100 Avg. W--CDMA 48 19.5/920 48.5 0.45 OM--780G--4L
Table 2. 1450–2200 MHz
Product
Frequency
Band(3)
MHz
Pout
(Typ)
Watts
Test
Signal
VDD
Volts
Gain
(Typ)/Freq.
dB/MHz
Eff.
(Typ)
%
JC
C/W Packaging
MW6S004NT1 U1–2000 4 PEP 2--Tone 28 18/1960 33 8.8 PLD--1.5
MW6S010NR1 U450–1500 10 PEP 2--Tone 28 18/960 32 2.85 T O -- 2 7 0 -- 2
MW6S010GNR1 U450–1500 10 PEP 2--Tone 28 18/960 32 2.85 TO--270G--2
MRF6S20010NR1 I1600–2200 10 PEP 2--Tone 28 15.5/2170 36 5.9 T O -- 2 7 0 -- 2
MRF6S20010GNR1 I1600–2200 10 PEP 2--Tone 28 15.5/2170 36 5.9 TO--270G--2
MD7IC1812NR1 I/O 1805–2170 1.3 Avg. W--CDMA 28 31.5/1880 14 2.9 TO--270WB--14
MD7IC1812GNR1 I/O 1805–2170 1.3 Avg. W--CDMA 28 31.5/1880 14 2.9 TO--270WBG--14
MD7IC2012NR1 I/O 1805–2170 1.3 Avg. W--CDMA 28 31.5/2170 14.9 3.1 TO--270WB--14
MD7IC2012GNR1 I/O 1805–2170 1.3 Avg. W--CDMA 28 31.5/2170 14.9 3.1 TO--270WBG--14
AFT20S015NR1 I1805–2700 1.5 Avg. W--CDMA 28 17.6/2170 22 4.2 T O -- 2 7 0 -- 2
AFT20S015GNR1 I1805–2700 1.5 Avg. W--CDMA 28 17.6/2170 22 4.2 TO--270G--2
MW7IC2020NT1 I/O 1805–2170 2.4 Avg. W--CDMA 28 32.6/2140 17 1.9 PQFN 8 8
MW7IC2220NR1 I/O 2110–2170 2Avg. W--CDMA 28 31/2170 13 1.5 TO--270WB--16
MW7IC2220GNR1 I/O 2110–2170 2Avg. W--CDMA 28 31/2170 13 1.5 TO--270WBG--16
MW7IC2220NBR1 I/O 2110–2170 2Avg. W--CDMA 28 31/2170 13 1.5 TO--272WB--16
A2I20D020NR1I/O 1400–2200 2.5 Avg W--CDMA 28 31/1800 19.7 2.9 TO--270WB--17
A2I20D020GNR1I/O 1400–2200 2.5 Avg W--CDMA 28 31/1800 19.7 2.9 TO--270WBG--17
MW7IC2040NR1 I/O 1930–1990 4Avg. W--CDMA 28 32/1930 17.5 1.5 TO--270WBL--16
MW7IC2040NBR1 I/O 1930–1990 4Avg. W--CDMA 28 32/1930 17.5 1.5 TO--272WB--16
MW7IC2240NR1 I/O 2110–2170 4Avg. W--CDMA 28 30/2110 14 1.3 TO--270WB--16
MW7IC2240GNR1 I/O 2110–2170 4Avg. W--CDMA 28 30/2110 14 1.3 TO--270WBG--16
MW6IC1940NBR1 I/O 1920–2000 4.5 Avg. W--CDMA 28 28.5/1920 13.5 1.2 TO--272WB--16
A2I20D040NR1I/O 1400–2200 5Avg W--CDMA 28 32.7/1800 21.8 1.3 TO--270WB--17
A2I20D040GNR1I/O 1400–2200 5Avg W--CDMA 28 32.7/1800 21.8 1.3 TO--270WBG--17
A2I22D050NR1 I1800–2200 5.3 Avg. W-CDMA 28 32.6/2170 17.9 1.1 TO--270WB--15
A2I22D050GNR1 I1800–2200 5.3 Avg. W-CDMA 28 32.6/2170 17.9 1.1 TO--270WBG--15
MD7IC2250GNR1 I/O 2110–2170 5.3 Avg. W--CDMA 28 31.1/2170 16.8 1.1 TO--270WBG--14
MD7IC2250NBR1 I/O 2110–2170 5.3 Avg. W--CDMA 28 31.1/2170 16.8 1.1 TO--272WB--14
MD7IC2251NR1 I/O 2110–2170 12 Avg. W--CDMA 28 29.0/2140 37.9 1.5 TO--270WB--14
MD7IC2251GNR1 I/O 2110–2170 12 Avg. W--CDMA 28 29.0/2140 37.9 1.5 TO--270WBG--14
A2I20H060NR1I/O 1800–2200 12 Avg W--CDMA 28 28.4/1840 43.8 1.6 TO--270WB--15
A2I20H060GNR1I/O 1800–2200 12 Avg W--CDMA 28 28.4/1840 43.8 1.6 TO--270WBG--15
A2I20H080NR1I/O 1800–2200 13.5 Avg W--CDMA 30 28.2/1840 43.4 1.9 TO--270WB--15
A2I20H080GNR1I/O 1800–2200 13.5 Avg W--CDMA 30 28.2/1840 43.4 1.9 TO--270WBG--15
MRF8S18120HSR3 I/O 1805–1880 72 CW CW 28 18.2/1805 49.8 0.47 NI--780S--2L
A2T18H160--24SR3I/O 1805–1880 28 Avg. W--CDMA 28 17.9/1805 49.9 0.45 NI--780S--4L2L
A2T18S162W31SR3I/O 1805–1880 32 Avg. W--CDMA 28 20.1/1840 33.9 0.36 NI--780S--2L2LA
A2T18S162W31GSR3I/O 1805–1880 32 Avg. W--CDMA 28 20.1/1840 33.9 0.36 NI--780GS--2L2LA
AFT18S230--12NR3I/O 1805–1880 50 Avg. W--CDMA 28 17.6/1880 33.8 0.27 OM--780--2L2L
AFT18S230SR3 I/O 1805–1880 50 Avg. W--CDMA 28 19.0/1880 32.0 0.41 NI--780S--2L4S
A2T18S260W12NR3I/O 1805–1880 56 Avg. W--CDMA 28 18.7/1880 34.4 0.23 OM--880X--2L2L
MRF8S18260HSR6 I/O 1805–1880 74 Avg. W--CDMA 30 17.9/1805 31.6 0.27 NI--1230S--4S4S
(3)U = Unmatched; I = Input; I/O = Input/Output.
New Product
20
NXP Semiconductors
RF Product Selector Guide
RF Cellular Infrastructure (continued)
Table 2. 1450–2200 MHz (continued)
Product
Frequency
Band(3)
MHz
Pout
(Typ)
Watts
Test
Signal
VDD
Volts
Gain
(Typ)/Freq.
dB/MHz
Eff.
(Typ)
%
JC
C/W Packaging
AFT18P350--4S2LR6 I/O 1805–1880 63 Avg. W--CDMA 28 16.1/1805 44.5 0.39 NI--1230S--4L2L
AFT18HW355SR6 I/O 1805–1880 63 Avg. W--CDMA 28 15.2/1880 48.3 0.47 NI--1230S--4S
AFT18H357--24NR6 I/O 1805–1880 63 Avg. W--CDMA 28 17.5/1805 48.7 0.23 OM--1230--4L2L
A2T18H410--24SR6 I/O 1805–1880 71 Avg. W--CDMA 28 17.4/1805 51.2 0.24 NI--1230S--4L2L
A2T18H450W19SR6I/O 1805–1880 89 Avg. W--CDMA 30 16.5/1880 47.7 0.27 NI--1230S--4S4S
A2T18H455W23NR6I/O 1805–1880 87 Avg. W--CDMA 31.5 15.9/1880 48.4 0.23 OM--1230--4L2S
MRF8P20161HSR3 I/O 1880–1920 37 Avg. W--CDMA 28 16.4/1920 45.8 0.76 NI--780S--4L
MRF6S19140HSR3 I/O 1930–1990 29 Avg. N--CDMA 28 16/1990 27.5 0.38 NI--880S--2L
MRF7S19170HSR3 I/O 1930–1990 50 Avg. W--CDMA 28 17.2/1990 32 0.31 NI--880S--2L
A2T18H100--25SR3 I/O 1805–1995 18 Avg. W--CDMA 28 18.1/1805 50.2 0.74 NI--780S--4L4S
A2T18S160W31SR3 I/O 1805–1995 32 Avg. W--CDMA 28 19.9/1880 31.6 0.36 NI--780S--2L2LA
A2T18S160W31GSR3 I/O 1805–1995 32 Avg. W--CDMA 28 19.9/1880 31.6 0.36 NI--780GS--2L2LA
A2T18S165--12S(2a) I/O 1805–1995 38 Avg. W--CDMA 28 18.0/1840 34 —NI--780S--2L2L
A2T18S260--12S(2a) I/O 1805–1995 63 Avg. W--CDMA 28 18.9/1805 30.1 —NI--780S--2L2L
MRF8P20165WHR3 I/O 1930–1995 37 Avg. W--CDMA 28 16.3/1995 46.0 0.79 NI--780H--4L
AFT18S260W31SR3 I/O 1805–1995 50 Avg. W--CDMA 28 19.8/1880 29.3 0.32 NI--780S--2L2LA
AFT18S260W31GSR3 I/O 1805–1995 50 Avg. W--CDMA 28 19.8/1880 29.3 0.32 NI--780GS--2L2LA
MRF8S18210WHSR3 I/O 1805–1995 50 Avg. W--CDMA 30 17.8/1930 29.2 0.48 NI--880XS--2L
MRF8S18210WGHSR3 I/O 1805–1995 50 Avg. W--CDMA 30 17.8/1930 29.2 0.48 NI--880XGS--2L
AFT18S290--13SR3 I/O 1805–1995 63 Avg. W--CDMA 28 18.2/1960 31.2 0.42 NI--880XS--2L4S
AFT18H356--24SR6 I/O 1805–1995 63 Avg. W--CDMA 28 15/1880 46.7 0.47 NI--1230S--4L2L
AFT18H357--24SR6 I/O 1805–1995 63 Avg. W–CDMA 28 17.3/1805 50.3 0.43 NI--1230S--4L2L
AFT20P140--4WNR3 I/O 1880–2025 24 Avg. W--CDMA 28 17.6/2025 41.2 0.60 OM--780--4L
AFT20P140--4WGNR3 I/O 1880–2025 24 Avg. W--CDMA 28 17.6/2025 41.2 0.60 OM--780G--4L
MRF6S18060NR1 I/O 1805–2000 60 CW CW 26 15/1990 50 0.81 TO--270WB--4
MRF8P20100HSR3 I/O 1805–2025 20 Avg. W--CDMA 28 16/2025 44.3 0.72 NI--780S--4L
MRF8P20140WHR3 I/O 1880–2025 24 Avg. W--CDMA 28 15.9/2025 42.0 0.68 NI--780H--4L
MRF8P20140WHSR3 I/O 1880–2025 24 Avg. W--CDMA 28 15.9/2025 42.0 0.68 NI--780S--4L
MRF8P20140WGHSR3 I/O 1880–2025 24 Avg. W--CDMA 28 15.9/2025 42.0 0.68 NI--780GS--4L
A2T20H160W04NR3I/O 1880–2025 28 Avg. W--CDMA 28 17/1960 47.7 0.45 OM--780--4L
MRF8P20160HR3 I/O 1880–2025 37 Avg. W--CDMA 28 16.5/1920 45.8 0.75 NI--780H--4L
MRF8P20160HSR3 I/O 1880–2025 37 Avg. W--CDMA 28 16.5/1920 45.8 0.75 NI--780S--4L
A2T20H330W24N(2a) I/O 1880–2025 55 Avg. W--CDMA 28 15.9/1880 49.8 0.26 OM--1230--4L2L
A2T20H330W24SR6 I/O 1880–2025 58 Avg. W--CDMA 28 16.5/1880 50.9 0.25 NI--1230S--4L2L
MRF7P20040HSR3 I/O 2010–2025 10 Avg. W--CDMA 32 18.2/2025 42.6 2.11 NI--780S--4L
AFT20P060--4NR3 I/O 1805–2170 6.3 Avg. W--CDMA 28 18.9/2170 20 0.56 OM--780--4L
AFT20P060--4GNR3 I/O 1805–2170 6.3 Avg. W--CDMA 28 18.9/2170 20 0.56 OM--780G--4L
MRF7S21080HSR3 I/O 2110–2170 22 Avg. W--CDMA 28 18/2170 32 0.65 NI--780S--2L
MRF8HP21080HR3 I/O 2110–2170 16 Avg. W--CDMA 28 14.4/2170 45.7 1.0 NI--780H--4L
MRF8HP21080HSR3 I/O 2110–2170 16 Avg. W--CDMA 28 14.4/2170 45.7 1.0 NI--780S--4L
A2T21H100--25SR3I/O 2110–2170 18 Avg. W--CDMA 28 17.4/2170 50.5 0.76 NI--780S--4L4S
MRF8S21100HSR3 I/O 2110–2170 24 Avg. W--CDMA 28 18.3/2170 33.4 0.48 NI--780S--2L
MRF8S21120HSR3 I/O 2110–2170 28 Avg. W--CDMA 28 17.6/2170 34 0.53 NI--780S--2L
AFT21S140W02SR3 I/O 2110–2170 32 Avg. W--CDMA 28 19.3/2140 33.5 0.59 NI--780S--2L
AFT21S140W02GSR3 I/O 2110–2170 32 Avg. W--CDMA 28 19.3/2140 33.5 0.59 NI--780GS--2L
MRF7S21150HSR3 I/O 2110–2170 44 Avg. W--CDMA 28 17.5/2110 31 0.37 NI--780S--2L
A2T21S160--12SR3I/O 2110–2170 38 Avg. W--CDMA 28 18.4/2170 32.9 0.3 NI--780S--2L2L
A2G22S160--01SR3 I1800–2200 32 Avg. W--CDMA 48 19.6/2110 38 1.7 NI--400S--2S
MRF8S21200HSR6 I/O 2110–2170 48 Avg. W--CDMA 28 18.1/2140 32.6 0.31 NI--1230S--4S
AFT21S220W02SR3 I/O 2110–2170 50 Avg. W–CDMA 28 19.1/2140 29.3 0.56 NI--780S--2L
AFT21S220W02GSR3 I/O 2110–2170 50 Avg. W--CDMA 28 19.1/2140 29.3 0.56 NI--780GS--2L
AFT21S230SR3 I/O 2110–2170 50 Avg. W--CDMA 28 16.7/2110 30.5 0.43 NI--780S--2L4S
AFT21S230--12SR3 I/O 2110–2170 50 Avg. W--CDMA 28 16.7/2110 30.5 0.43 NI--780S--2L2L
(2)To be introduced: a) 2Q16; b) 3Q16; c) 4Q16.
(3)U = Unmatched; I = Input; I/O = Input/Output.
New Product
21
NXP Semiconductors
RF Product Selector Guide
RF Cellular Infrastructure (continued)
Table 2. 1450–2200 MHz (continued)
Product
Frequency
Band(3)
MHz
Pout
(Typ)
Watts
Test
Signal
VDD
Volts
Gain
(Typ)/Freq.
dB/MHz
Eff.
(Typ)
%
JC
C/W Packaging
AFT21S232SR3 I/O 2110–2170 50 Avg. W--CDMA 28 16.7/2110 30.5 0.43 NI--780S--2L
AFT21S240--12SR3 I/O 2110–2170 55 Avg. W--CDMA 28 20.4/2170 33.9 0.35 NI--880XS--2L2L
A2G22S251--01SR3I1805–2200 48 Avg. W--CDMA 48 17.7/2170 37.5 1.3 NI--400S--2S
A2T21S260--12SR3I/O 2110–2170 65 Avg. W--CDMA 28 18.7/2170 30.6 0.28 NI--780S--2L2L
AFT21H350W03SR6 I/O 2110–2170 63 Avg. W--CDMA 28 16.4/2110 47.1 0.49 NI--1230S--4S
AFT21H350W04GSR6 I/O 2110–2170 63 Avg. W--CDMA 28 16.4/2110 47.1 0.49 NI--1230GS--4L
A2T21H360--23NR6I/O 2110–2200 63 Avg. W--CDMA 28 16.8/2140 49.7 0.19 OM--1230--4L2S
A2T21H360--24SR6 I/O 2110–2170 63 Avg. W--CDMA 28 16.2/2140 51.8 0.33 NI--1230S--4L2L
A2T21H410--24SR6I/O 2110–2170 72 Avg. W--CDMA 28 15.6/2170 48.9 0.24 NI--1230S--4L2L
A2T21H450W19SR6I/O 2110–2200 89 Avg. W--CDMA 30 15.7/2110 46.1 0.26 NI--1230S--4S4S
Table 3. 2300–2690 MHz
Frequency Pout Gain Eff.
Band(3) (Typ) Test VDD (Typ)/Freq. (Typ) JC
Product MHz Watts Signal Volts dB/MHz %C/W Packaging
A2I25D012NR1 I2300–2690 2.2 Avg. W--CDMA 28 33.2/2690 19.8 3.3 TO--270WB--15
A2I25D012GNR1 I2300–2690 2.2 Avg. W--CDMA 28 33.2/2690 19.8 3.3 TO--270WBG--15
AFT20S015NR1 I1805–2690 1.5 Avg. W--CDMA 28 17.6/2170 22 4.2 T O -- 2 7 0 -- 2
AFT20S015GNR1 I1805–2690 1.5 Avg. W--CDMA 28 17.6/2170 22 4.2 TO--270G--2
MRF6S27015NR1 I2300–2700 3Avg. W--CDMA 28 14/2600 22 2.2 T O -- 2 7 0 -- 2
A2I25D025NR1 I2100–2900 3.2 Avg. W--CDMA 28 32.5/2600 20 1.8 TO--270WB--17
A2I25D025GNR1 I2100–2900 3.2 Avg. W--CDMA 28 32.5/2600 20 1.8 TO--270WBG--17
MW7IC2725NR1 I/O 2500–2700 4Avg. WiMAX 28 28.5/2700 17 1.4 TO--270WB--16
MW7IC2725GNR1 I/O 2500–2700 4Avg. WiMAX 28 28.5/2700 17 1.4 TO--270WBG--16
MD7IC2755NR1 I/O 2500–2700 10 Avg. WiMAX 28 25/2700 25 1.8 TO--270WB--14
MD7IC2755GNR1 I/O 2500–2700 10 Avg. WiMAX 28 25/2700 25 1.8 TO--270WBG--14
A2I25H060NR1I2300--2690 10.5 Avg. W--CDMA 28 27.5/2590 40.9 2.2 TO--270WB--17
A2I25H060GNR1I2300--2690 10.5 Avg. W--CDMA 28 27.5/2590 40.9 2.2 TO--270WBG--17
MRF8P23080HSR3 I/O 2300–2400 16 Avg. W--CDMA 28 14.6/2300 42 0.89 NI--780S--4L
A2T23H160--24SR3I/O 2300--2400 28 Avg. W--CDMA 28 17.7/2300 48.8 0.49 NI--780S--4L2L
AFT23H160--25SR3I/O 2300--2400 32 Avg. W--CDMA 28 16.7/2300 46.6 0.40 NI--880XS--4L4S
AFT23S160W02SR3 I/O 2300–2400 45 Avg. W--CDMA 28 17.9/2400 30.3 0.53 NI--780S--2L
AFT23S160W02GSR3 I/O 2300–2400 45 Avg. W–CDMA 28 17.9/2400 30.3 0.53 NI--780GS--2L
MRF8P23160WHSR3 I/O 2300–2400 30 Avg. W--CDMA 28 14.1/2320 36.5 0.69 NI--780S--4L
AFT23S170--13SR3 I/O 2300–2400 45 Avg. W--CDMA 28 18.8/2400 33.9 0.42 NI--780S--2L4S
AFT23H200--4S2LR6 I/O 2300–2400 45 Avg. W--CDMA 28 15.3/2300 42.8 0.32 NI--1230S--4L2L
AFT23H201--24S(2a) I/O 2300–2400 45 Avg. W--CDMA 28 16.3/2300 46.2 —ACP--1230S--4L2L
A2T23H300--24SR6I/O 2300--2400 66 Avg. W--CDMA 28 14.9/2300 46.7 0.25 NI--1230S--4L2L
AFT26HW050SR3 I/O 2496–2690 9Avg. W--CDMA 28 14.2/2690 47.1 0.75 NI--780S--4L4S
AFT26HW050GSR3 I/O 2496–2690 9Avg. W--CDMA 28 14.2/2690 47.1 0.75 NI--780GS--4L4L
AFT26H050W26SR3 I/O 2496–2690 9Avg. W--CDMA 28 14.2/2690 47.1 0.75 NI--780S--4L4L
AFT26P100--4WSR3 I/O 2496–2690 22 Avg. W--CDMA 28 15.3/2690 43.9 0.60 NI--780S--4L
AFT26P100--4WGSR3 I/O 2496–2690 22 Avg. W--CDMA 28 15.3/2690 43.9 0.60 NI--780GS--4L
A2T26H160--24SR3 I/O 2496–2690 28 Avg. W--CDMA 28 16.4/2690 48.1 0.56 NI--780S--4L2L
AFT26H160--4S4R3 I/O 2496–2690 32 Avg. W--CDMA 28 14.9/2496 45.7 0.41 NI--880XS--4L4S
A2T26H165--24SR3I/O 2496–2690 32 Avg. W--CDMA 28 14.7/2496 45.4 0.45 NI--780S--4L2L
AFT26H200W03SR6 I/O 2496–2690 45 Avg. W--CDMA 28 14.1/2496 45.2 0.46 NI--1230S--4S
AFT26H250--24SR6 I/O 2496–2690 50 Avg. W--CDMA 28 14.1/2496 44.6 0.42 NI--1230S--4L2L
AFT26H250W03SR6 I/O 2496–2690 50 Avg. W--CDMA 28 14.1/2496 44.6 0.42 NI--1230S--4S
A2G26H281--04S(2a) I2496–2690 50 Avg. W--CDMA 48 15.3/2635 57 —NI--780S--4L
A2T26H300--24SR6I/O 2496--2690 60 Avg. W--CDMA 28 14.5/2496 42.5 0.29 NI--1230S--4L2L
MRF8P26080HSR3 I/O 2500–2700 14 Avg. W--CDMA 28 15.0/2620 36.9 0.88 NI--780S--4L
MRF7S27130HSR3 I/O 2500–2700 23 Avg. WiMAX 28 16.5/2700 20 0.36 NI--780S--2L
(2)To be introduced: a) 2Q16; b) 3Q16; c) 4Q16.
(3)U = Unmatched; I = Input; I/O = Input/Output.
New Product
22
NXP Semiconductors
RF Product Selector Guide
RF Cellular Infrastructure (continued)
Table 4. 3400–3800 MHz
Frequency Pout Gain Eff.
Band(3) (Typ) Test VDD (Typ)/Freq. (Typ) JC
Product MHz Watts Signal Volts dB/MHz %C/W Packaging
AFT27S006NT1 U728–3600 0.76 Avg. W--CDMA 28 22.5/2170 20.2 3.4 PLD--1.5W
AFT27S010NT1 U728–3600 1.26 Avg. W--CDMA 28 21.7/2170 22.6 3.5 PLD--1.5W
A2I35H060NR1I/O 3400–3800 10 Avg. W--CDMA 28 24/3400 32.4 1.7 TO--270WB--17
A2I35H060GNR1I/O 3400–3800 10 Avg. W--CDMA 28 24/3400 32.4 1.7 TO--270WBG--17
A2G35S160--01SR3I3400–3600 32 Avg. W--CDMA 48 15.7/3500 36.7 1.9 NI--400S--2S
A2G35S200--01SR3I3400–3600 40 Avg. W--CDMA 48 16.1/3500 35.3 1.3 NI--400S--2S
(3)U = Unmatched; I = Input; I/O = Input/Output.
New Product
23
NXP Semiconductors
RF Product Selector Guide
RF ISM (Industrial, Scientific and Medical) and Broadcast
NXP RF industrial, scientific, medical (ISM) and broadcast RF power transistors are designed to simplify the use of solid-state
RF in high-powered ISM applications at frequencies from 1 to 600 MHz. The devices serve applications in the 915, 1300 and
2450 MHz frequency bands and are well-suited for FM radio and VHF and UHF TV broadcast.
Table 1. Wideband GaN — 1–2500 MHz
Frequency Gain Eff.
Band(3) Pout Test VDD (Typ)/Freq. (Typ) JC
Product MHz Watts Signal Volts dB/MHz %C/W Packaging
AFG24S100HR5I1–2500 100 CW CW 50 16.3/2500 63 0.86 NI--360H--2SB
Table 2. Wideband LDMOS — 1–2000 MHz
Frequency Gain Eff.
Band(3) Pout Test VDD (Typ)/Freq. (Typ) JC
Product MHz Watts Signal Volts dB/MHz %C/W Packaging
MRFE6VS25NR1 U1.8–2000 25 CW CW 50 25.5/512 75.0 1.2 T O -- 2 7 0 -- 2
MRFE6VS25GNR1 U1.8–2000 25 CW CW 50 25.5/512 75.0 1.2 TO--270G--2
MRFE6VS25LR5 U1.8–2000 25 CW CW 50 25.9/512 74.0 1.4 NI--360H--2L
MRFE6VP100HR5 U1.8–2000 100 CW CW 50 27.2/512 70.0 0.38 NI--780H--4L
MRFE6VP100HSR5 U1.8–2000 100 CW CW 50 27.2/512 70.0 0.38 NI--780S--4L
Table 3. ISM and Broadcast LDMOS — 1–600 MHz
Frequency Gain Eff.
Band(3) Pout Test VDD (Typ)/Freq. (Typ) JC
Product MHz Watts Signal Volts dB/MHz %C/W Packaging
MRF6V2010NR1 U1.8–600 10 CW CW 50 23.9/220 62 3.0 T O -- 2 7 0 -- 2
MRF6V2010GNR1 U1.8–600 10 CW CW 50 23.9/220 62 3.0 TO--270G--2
MRFE6VP5150NR1 U1.8–600 150 CW CW 50 26.3/230 72 0.21 TO--270WB--4
MRFE6VP5150GNR1 U1.8–600 150 CW CW 50 26.3/230 72 0.21 TO--270WBG--4
MRFE6VP5300NR1 U1.8–600 300 CW CW 50 25/230 70 0.22 TO--270WB--4
MRFE6VP5300GNR1 U1.8–600 300 CW CW 50 25/230 70 0.22 TO--270WBG--4
MRFE6VP6300HR3 U1.8–600 300 CW CW 50 25/130 80 0.19 NI--780H--4L
MRFE6VP6300HSR5 U1.8–600 300 CW CW 50 25/130 80 0.19 NI--780S--4L
MRFE6VP6300GSR5 U1.8–600 300 CW CW 50 25/130 80 0.19 NI--1230GS--4L
MRFE6VP5600HR6 U1.8–600 600 CW CW 50 24.6/230 75.2 0.12 NI--1230H--4S
MRFE6VP5600HSR5 U1.8–600 600 CW CW 50 24.6/230 75.2 0.12 NI--1230S--4S
MRFE6VP6600NR3 U1.8–600 600 CW CW 50 24/98 81 —OM--780--4L
MRFE6VP6600GNR3 U1.8–600 600 CW CW 50 24/98 81 —OM--780G--4L
MRFE6VP61K25HR5 U1.8–600 1250 CW CW 50 22.9/230 74.6 0.15 NI--1230H--4S
MRFE6VP61K25HR6 U1.8–600 1250 CW CW 50 22.9/230 74.6 0.15 NI--1230H--4S
MRFE6VP61K25HSR5 U1.8–600 1250 CW CW 50 22.9/230 74.6 0.15 NI--1230S--4S
MRFE6VP61K25GSR5 U1.8–600 1250 CW CW 50 22.9/230 74.6 0.15 NI--1230GS--4L
MRFE6VP61K25NR6 U1.8–600 1250 CW CW 50 22.5/230 72.3 0.06 OM--1230--4L
MRFE6VP61K25GNR6 U1.8–600 1250 CW CW 50 22.5/230 72.3 0.06 OM--1230G--4L
MRF1K50H(2a) U1.8–500 1500 CW CW 50 22.5/230 74.6 —NI--130H--4S
MRF1K50N(2b) U1.8–500 1500 CW CW 50 22/230 74 —OM--1230--4L
MRF1K50GN(2b) U1.8–500 1500 CW CW 50 22/230 74 —OM--1230G--4L
(2)To be introduced: a) 2Q16; b) 3Q16; c) 4Q16.
(3)U = Unmatched; I = Input; I/O = Input/Output.
New Product
24
NXP Semiconductors
RF Product Selector Guide
RF ISM (Industrial, Scientific and Medical) and Broadcast (continued)
Table 4. UHF Broadcast LDMOS — 470–860 MHz
Frequency Gain Eff.
Band (3) Pout Test VDD (Typ)/Freq. (Typ) JC
Product MHz Watts Signal Volts dB/MHz %C/W Packaging
MRFE6S9060NR1 U470–860 14 Avg. N--CDMA 28 21.4/880 32.1 0.88 TO--270--2
MRF6V3090NR1 I470–1215 18 Avg. OFDM 50 22/860 28.5 0.79 TO--270WB--4
MRF6V3090NR5 I470–1215 18 Avg. OFDM 50 22/860 28.5 0.79 TO--270WB--4
MRF6V3090NBR1 I470–1215 18 Avg. OFDM 50 22/860 28.5 0.79 TO--272WB--4
MRF6V3090NBR5 I470–1215 18 Avg. OFDM 50 22/860 28.5 0.79 TO--272WB--4
MRF6VP3091NR1 I470–1215 18 Avg. OFDM 50 22/860 28.5 0.79 TO--270WB--4
MRF6VP3091NBR1 I470–1215 18 Avg. OFDM 50 22/860 28.5 0.79 TO--272WB--4
MRF6VP3450HR6 I470–860 90 Avg. OFDM 50 22.5/860 28 0.27 NI--1230H--4S
MRF6VP3450HR5 I470–860 90 Avg. OFDM 50 22.5/860 28 0.27 NI--1230H--4S
MRF6VP3450HSR5 I470–860 90 Avg. OFDM 50 22.5/860 28 0.27 NI--1230S--4S
MRFE6VP8600HR5 I470–860 125 Avg. OFDM 50 19.3/860 30 0.19 NI--1230H--4S
MRFE6VP8600HSR5 I470–860 125 Avg. OFDM 50 19.3/860 30 0.19 NI--1230S--4S
MRFE8VP8600HR5 I470–860 140 Avg. OFDM 50 20/810 34 0.16 NI--1230H--4S
Table 5. ISM LDMOS — 700–1300 MHz
Frequency Gain Eff.
Band (3) Pout Test VDD (Typ)/Freq. (Typ) JC
Product MHz Watts Signal Volts dB/MHz %C/W Packaging
MRFE6S9060NR1 U470–860 14 Avg. N--CDMA 28 21.4/880 32.1 0.88 TO--270--2
MRF8VP13350NR3 I700–1300 350 CW CW 50 20.7/915 67.5 0.24 OM--780--4L
MRF8VP13350GNR3 I700–1300 350 CW CW 50 20.7/915 67.5 0.24 OM--780G--4L
Table 6. ISM LDMOS — 2400–2500 MHz
Frequency Gain Eff.
Band(3) Pout Test VDD (Typ)/Freq. (Typ) JC
Product MHz Watts Signal Volts dB/MHz %C/W Packaging
MW7IC2425GNR1 I/O 2450 25 CW CW 28 27.7/2450 43.8 1.2 TO--270WBG--16
MW7IC2425NBR1 I/O 2450 25 CW CW 28 27.7/2450 43.8 1.2 TO--272WB--16
MRF6S24140HSR3 I/O 2450 140 CW CW 28 13.2/2450 45 0.29 NI--880S--2L
MRF7S24250NR3 I/O 2400–2500 250 CW CW 32 15.9/2450 59 0.26 OM--780--2L
MRF24300NR3I/O 2400–2500 300 CW CW 32 13.1/2450 60.5 0.24 OM--780--2L
(3)U = Unmatched; I = Input; I/O = Input/Output.
New Product
25
NXP Semiconductors
RF Product Selector Guide
RF Mobile Radio and General Purpose Drivers
NXP RF 7.5 and 12.5 V transistors are designed for 2--way handheld and vehicle radios. The broadband performance of the
devices makes them ideal as general purpose drivers for ISM and broadcast applications below 1 GHz.
Table 1. 7–12 V LDMOS — 1–1000 MHz
Frequency Gain Eff.
Band(3) Pout Test VDD (Typ)/Freq. (Typ) JC
Product MHz Watts Signal Volts dB/MHz %C/W Packaging
AFIC901NT1U1.8–1000 1CW CW 7.5 31.2/520 73 9.4 QFN 4 4, 24L
AFT05MS003NT1U1.8–941 3CW CW 7.5 20.8/520 68.3 4.1 SOT-89
AFT05MS004NT1 U 1.8–941 4CW CW 7.5 20.9/520 74.9 4.4 SOT--89
AFM906(2b) U136–941 6CW CW 7.5 20.3/520 70.8 —DFN 4 6
AFT05MS006NT1 U 136–941 6CW CW 7.5 18.3/520 73 1PLD--1.5W
AFT09MS007NT1 U 136–941 7CW CW 7.5 15.2/870 71 1.1 PLD--1.5W
AFT09MS015NT1 U 136–941 16 CW CW 12.5 17.2/941 77 1.0 PLD--1.5W
AFT05MS031NR1 U136–520 31 CW CW 13.6/12.5 17.7/520 71.0 0.67 T O -- 2 7 0 -- 2
AFT05MS031GNR1 U136–520 31 CW CW 13.6/12.5 17.7/520 71.0 0.67 TO--270G--2
AFT09MS031NR1 U764–941 31 CW CW 13.6/12.5 17.2/870 71.0 0.63 T O -- 2 7 0 -- 2
AFT09MS031GNR1 U764–941 31 CW CW 13.6/12.5 17.2/870 71.0 0.63 TO--270G--2
AFT09MP055NR1 U764–941 55 CW CW 12.5 17.5/870 69 0.32 TO--270WB--4
AFT09MP055GNR1 U764–941 55 CW CW 12.5 17.5/870 69 0.32 TO--270WBG--4
AFT05MP075NR1 U136–520 70 CW CW 12.5 18.5/520 68.5 0.29 TO--270WB--4
AFT05MP075GNR1 U136–520 70 CW CW 12.5 18.5/520 68.5 0.29 TO--270WBG--4
MD8IC970NR1 I/O 850–940 35 Avg. 2--Tone 28 32.6/940 42.1 0.6 TO--270WBL--16
MD8IC970GNR1 I/O 850–940 35 Avg. 2--Tone 28 32.6/940 42.1 0.6 TO--270WBLG--16
MRFE6S9060NR1 U470–860 14 Avg. N--CDMA 28 21.4/880 32.1 0.88 T O -- 2 7 0 -- 2
MRF8VP13350NR3 I700–1300 350 CW CW 50 20.7/915 67.5 0.24 OM--780--4L
MRF8VP13350GNR3 I700–1300 350 CW CW 50 20.7/915 67.5 0.24 OM--780G--4L
(2)To be introduced: a) 2Q16; b) 3Q16; c) 4Q16.
(3)U = Unmatched; I = Input; I/O = Input/Output.
New Product
26
NXP Semiconductors
RF Product Selector Guide
RF Military
NXP RF GaN and LDMOS technologies are ideally suited for military applications such as battlefield communications, primary
radar covering HF, VHF, UHF, L--Band, S--Band, and avionics (such as IFF transponders) and electronic warfare jamming. The
high power and high--gain performance of these devices make them ideal for common--source amplifier applications under
demanding conditions.
Table 1. General Purpose Driver ICs
Frequency Gain Eff.
Band(3) Pout Test VDD (Typ)/Freq. (Typ) JC
Product MHz Watts Signal Volts dB/MHz %C/W Packaging
MMRF2005NR1 I/O 728–960 3.2 Avg. W--CDMA 28 35.9/940 16.5 1.6 TO--270WB--16
MMRF2005GNR1 I/O 728–960 3.2 Avg. W--CDMA 28 35.9/940 16.5 1.6 TO--270WBG--16
MMRF2006NT1 I1805–2170 20 Avg. W--CDMA 28 32.6/2140 50 1.9 PQFN 8 8
MMRF2004NBR1 I/O 2500–2700 25 Avg. WiMAX 28 28.5/2700 36 1.4 TO--272WB--16
MMRF2007NR1 I/O 136–940 35 Avg. 2--Tone 28 32.6/940 42.1 0.6 TO--270WBL--16
MMRF2007GNR1 I/O 136–940 35 Avg. 2--Tone 28 32.6/940 42.1 0.6 TO--270WBLG--16
Table 2. General Purpose Driver Transistors
Frequency Gain Eff.
Band(3) Pout Test VDD (Typ)/Freq. (Typ) JC
Product MHz Watts Signal Volts dB/MHz %C/W Packaging
28 Volt LDMOS
MMRF1014NT1 U1–2000 4Avg. 2--Tone 28 18/1960 43 8.8 PLD--1.5
MMRF1015NR1 U450–1500 10 Avg. 2--Tone 28 18/960 40 2.85 T O -- 2 7 0 -- 2
MMRF1015GNR1 U450–1500 10 Avg. 2--Tone 28 18/960 40 2.85 TO--270G--2
MMRF1004NR1 I2110–2170 10 PEP 2--Tone 28 15.5/2170 36 2.3 T O -- 2 7 0 -- 2
MMRF1004GNR1 I2110–2170 10 PEP 2--Tone 28 15.5/2170 36 2.3 TO--270G--2
MMRF1315NR1 I/O 500–1000 60 CW CW 28 20/960 63 0.77 T O -- 2 7 0 -- 2
MMRF1017NR3 I/O 720–960 80 Avg. W--CDMA 28 20.0/960 36.1 0.31 OM--780--2L
50 Volt LDMOS
MMRF1012NR1 U10–450 10 CW CW 50 23.9/220 62 3T O -- 2 7 0 -- 2
MMRF1304LR5 UTo 2000 25 CW CW 50 26/512 75 1.4 NI--360--2
MMRF1304NR1 UTo 2000 25 CW CW 50 25.5/512 74.7 1.2 T O -- 2 7 0 -- 2
MMRF1304GNR1 UTo 2000 25 CW CW 50 25.5/512 74.7 1.2 TO--270G--2
MMRF1305HR5 UTo 2000 100 CW CW 50 27.2/512 70 0.38 NI--780H--4L
MMRF1305HSR5 UTo 2000 100 CW CW 50 27.2/512 70 0.38 NI--780S--4L
MMRF1316NR1 I/O 1.8–600 300 CW CW 50 25/230 70 0.22 TO--270WB--4
MMRF1318NR1 U10–600 300 CW CW 50 22/450 60 0.24 TO--270WB--4
Table 3. Radar
Frequency Gain Eff.
Band(3) Pout Test VDD (Typ)/Freq. (Typ) JC
Product MHz Watts Signal Volts dB/MHz %C/W Packaging
HF, VHF and UHF Radar
MMRF1012NR1 U10–450 10 CW CW 50 23.9/220 62 3T O -- 2 7 0 -- 2
MMRF1304LR5 UTo 2000 25 CW CW 50 26/512 75 1.4 NI--360--2
MMRF1304NR1 UTo 2000 25 CW CW 50 25.5/512 74.7 1.2 T O -- 2 7 0 -- 2
MMRF1304GNR1 UTo 2000 25 CW CW 50 25.5/512 74.7 1.2 TO--270G--2
MMRF1315NR1 I/O 500–1000 60 CW CW 28 20/960 63 0.77 T O -- 2 7 0 -- 2
MMRF1305HR5 UTo 2000 100 CW CW 50 27.2/512 70 0.38 NI--780H--4L
MMRF1305HSR5 UTo 2000 100 CW CW 50 27.2/512 70 0.38 NI--780S--4L
MMRF1020--04NR3 I720–960 100 Avg. W--CDMA 48 19.5/920 48.5(4) 0.45 OM--780--4L
MMRF1020--04GNR3 I720–961 100 Avg. W--CDMA 48 19.5/920 48.5(4) 0.45 OM--780G--4L
MMRF1311HR5I470--860 140 Avg. OFDM 50 20/810 34 0.16 NI--1230H--4S
MMRF1310HR5 UTo 600 300 CW CW 50 25.0/300 80.0 0.19 NI--780H--4L
MMRF1310HSR5 UTo 600 300 CW CW 50 25.0/300 80.0 0.19 NI--780S--4L
(3)U = Unmatched; I = Input; I/O = Input/Output.
(4)In Doherty circuit.
New Product
27
NXP Semiconductors
RF Product Selector Guide
RF Military (continued)
Table 3. Radar (continued)
Frequency Gain Eff.
Band(3) Pout Test VDD (Typ)/Freq. (Typ) JC
Product MHz Watts Signal Volts dB/MHz %C/W Packaging
HF, VHF and UHF Radar (continued)
MMRF1316NR1 I/O 1.8–600 300 CW CW 50 25/230 70 0.22 TO--270WB--4
MMRF1318NR1 U10–600 300 CW CW 50 22/450 60 0.24 TO--270WB--4
MMRF1016HR5 UTo 500 600 Peak OFDM 50 25/225 59 0.2 NI--1230H--4S
MMRF1308HR5 UTo 600 600 CW CW 50 24.6/230 75.2 0.12 NI--1230H--4S
MMRF1308HSR5 UTo 600 600 CW CW 50 24.6/230 75.2 0.12 NI--1230S--4S
MMRF1006HR5 U10–500 1000 Peak Pulse 50 20/450 64 0.03 NI--1230H--4S
MMRF1006HSR5 U10–500 1000 Peak Pulse 50 20/450 64 0.03 NI--1230S--4S
MMRF1306HR5 U1.8–600 1250 CW CW 50 22.9/230 74.6 0.15 NI--1230H--4S
MMRF1306HSR5 U1.8–600 1250 CW CW 50 22.9/230 74.6 0.15 NI--1230S--4S
L--Band Radar
MMRF1019NR4 I/O 960–1400 10 Peak Pulse 50 25/1090 69 1.6 PLD--1.5
MMRF1304LR5 UTo 2000 25 CW CW 50 26/512 75 1.4 N I -- 3 6 0 -- 2
MMRF1304NR1 UTo 2000 25 CW CW 50 25.5/512 74.7 1.2 TO--270--2
MMRF1304GNR1 UTo 2000 25 CW CW 50 25.5/512 74.7 1.2 TO--270G--2
MMRF1305HR5 UTo 2000 100 CW CW 50 27.2/512 70 0.38 NI--780H--4L
MMRF1305HSR5 UTo 2000 100 CW CW 50 27.2/512 70 0.38 NI--780S--4L
MMRF1005HR5 I1300 250 Peak Pulse 50 22.7/1300 57.0 0.07 NI--780H--2L
MMRF1005HSR5 I1300 250 Peak Pulse 50 22.7/1300 57.0 0.07 NI--780S--2L
MMRF2010NR1I1030--1090 250 Peak Pulse 50 32.5/1030 59.1 0.15 TO--270WB--14
MMRF2010GNR1I1030--1090 250 Peak Pulse 50 32.5/1030 59.1 0.15 TO--270WBG--14
MMRF1008HR5 I/O 960–1215 275 Peak Pulse 50 20.3/1030 65.5 0.08 NI--780H--2L
MMRF1008HSR5 I/O 960–1215 275 Peak Pulse 50 20.3/1030 65.5 0.08 NI--780S--2L
MMRF1008GHR5I/O 960–1215 275 Peak Pulse 50 20.3/1030 65.5 0.08 NI--780GH--2L
MMRF1011HR5 I/O 1400 330 Peak Pulse 50 18/1400 60.5 0.13 NI--780H--2L
MMRF1011HSR5 I/O 1400 330 Peak Pulse 50 18/1400 60.5 0.13 NI--780S--2L
MMRF1009HR5 I/O 960–1215 500 Peak Pulse 50 19.7/1030 62.0 0.044 NI--780H--2L
MMRF1009HSR5 I/O 960–1215 500 Peak Pulse 50 19.7/1030 62.0 0.044 NI--780S--2L
MMRF1007HR5 I965–1215 1000 Peak Pulse 50 20/1030 56 0.02 NI--1230H--4S
MMRF1007HSR5 I965–1215 1000 Peak Pulse 50 20/1030 56 0.02 NI--1230S--4S
MMRF1314HR5I/O 1200–1400 1000 Peak Pulse 52 15.5 46.5 0.018 NI--1230H--4S
MMRF1314HSR5I/O 1200–1400 1000 Peak Pulse 52 15.5 46.5 0.018 NI--1230S--4S
MMRF1314GSR5I/O 1200–1400 1000 Peak Pulse 52 15.5 46.5 0.018 NI--1230GS--4L
MMRF1312HR5I/O 900–1215 1200 Peak(5) Pulse 52 17.3 54 0.017 NI--1230H--4S
MMRF1312HSR5I/O 900–1215 1200 Peak(5) Pulse 52 17.3 54 0.017 NI--1230S--4S
MMRF1312GSR5I/O 900–1215 1200 Peak(5) Pulse 52 17.3 54 0.017 NI--1230GS--4L
MMRF1317HR5U1030--1090 1500 Peak(5) Pulse 50 18.9/1030 56 0.019 NI--1230H--4S
MMRF1317HSR5U1030--1090 1500 Peak(5) Pulse 50 18.9/1030 56 0.019 NI--1230S--4S
S--Band Radar
MMRF5300NR5I2700–3500 60 Peak Pulse 50 17/3500 61.5 0.52 O M -- 2 7 0 -- 2
MMRF1013HR5 I/O 2700–2900 320 Peak Pulse 30 13.3/2900 50.5 0.06 NI--1230H--4S
MMRF1013HSR5 I/O 2700–2900 320 Peak Pulse 30 13.3/2900 50.5 0.06 NI--1230S--4S
(3)U = Unmatched; I = Input; I/O = Input/Output.
(5)Pout @ P3dB.
New Product
28
NXP Semiconductors
RF Product Selector Guide
RF Military (continued)
Table 4. Radio Communications
Frequency Gain Eff.
Band(3) Pout Test VDD (Typ)/Freq. (Typ) JC
Product MHz Watts Signal Volts dB/MHz %C/W Packaging
28 Volt GaN
MMRF5011N(2b) I1–3000 12 CW CW 28 13/2500 40 —O M -- 2 7 0 -- 8
50 Volt GaN
MMRF5013N(2b) I1–3000 12 CW CW 50 15/2700 60 —O M -- 2 7 0 -- 8
MMRF5019N(2b) I1–3000 25 CW CW 50 18/1500 40 —O M -- 2 7 0 -- 8
MMRF5023N(2b) I1–2700 63 CW CW 50 16/2500 40 —O M -- 2 7 0 -- 2
MMRF5014HR5 I1–2700 125 CW CW 50 16/2500 64.2 0.86 NI--360H--2SB
MMRF5015NR5I1–2700 125 CW CW 50 16/2500 64.2 0.66 O M -- 2 7 0 -- 2
7.5 Volt LDMOS
MMRF1021NT1 U136–941 7CW CW 7.5 15.2/870 71 1.1 PLD--1.5W
28 Volt LDMOS
MMRF1024HSR5I/O 2496–2690 50 Avg. W--CDMA 28 14.1/2590 44.6 0.42 NI--1230S--4L2L
MMRF1022HSR5I/O 2110–2170 63 Avg. W--CDMA 28 16.2/2140 51.8 0.33 NI--1230S--4L2L
MMRF1023HSR5I/O 2300–2400 66 Avg. W--CDMA 28 14.9/2350 46.7 0.25 NI--1230S--4L2L
MMRF1315NR1 I/O 500–1000 60 CW CW 28 20/960 63 0.77 TO--270--2
50 Volt LDMOS — 1–600 MHz
MMRF1012NR1 U10–450 10 CW CW 50 23.9/220 62 3TO--270--2
MMRF1304LR5 UTo 2000 25 CW CW 50 26/512 75 1.4 NI--360--2
MMRF1304NR1 UTo 2000 25 CW CW 50 25.5/512 74.7 1.2 TO--270--2
MMRF1304GNR1 UTo 2000 25 CW CW 50 25.5/512 74.7 1.2 TO--270G--2
MMRF1320NR1U1.8–600 150 CW CW 50 26.1/230 70.3 0.21 TO--270WB--4
MMRF1320GNR1U1.8–600 150 CW CW 50 26.1/230 70.3 0.21 TO--270WBG--4
MMRF1310HR5 UTo 600 300 CW CW 50 25.0/300 80.0 0.19 NI--780H--4L
MMRF1310HSR5 UTo 600 300 CW CW 50 25.0/300 80.0 0.19 NI--780S--4L
MMRF1318NR1 U10–600 300 CW CW 50 22/450 60 0.24 TO--270WB--4
MMRF1016HR5 UTo 500 600 Peak OFDM 50 25/225 59 0.2 NI--1230H--4S
MMRF1308HR5 UTo 600 600 CW CW 50 24.6/230 75.2 0.12 NI--1230H--4S
MMRF1308HSR5 UTo 600 600 CW CW 50 24.6/230 75.2 0.12 NI--1230S--4S
MMRF1306HR5 U1.8–600 1250 CW CW 50 22.9/230 74.6 0.15 NI--1230H--4S
MMRF1306HSR5 U1.8–600 1250 CW CW 50 22.9/230 74.6 0.15 NI--1230S--4S
50 Volt LDMOS — 450–2000 MHz
MMRF1304LR5 UTo 2000 25 CW CW 50 26/512 75 1.4 NI--360--2
MMRF1304NR1 UTo 2000 25 CW CW 50 25.5/512 74.7 1.2 TO--270--2
MMRF1304GNR1 UTo 2000 25 CW CW 50 25.5/512 74.7 1.2 TO--270G--2
MMRF1018NR1 I470–860 90 CW CW 50 22.0/860 57 0.79 TO--270WB--4
MMRF1018NBR1 I470–860 90 CW CW 50 22.0/860 57 0.79 TO--272WB--4
MMRF1305HR5 UTo 2000 100 CW CW 50 27.2/512 70 0.38 NI--780H--4L
MMRF1305HSR5 UTo 2000 100 CW CW 50 27.2/512 70 0.38 NI--780S--4L
MMRF5021H(1) I1–2700 250 CW CW 50 16/2500 58 —NI--780H--4L
MMRF1020--04NR3 I720–960 100 Avg. W--CDMA 48 19.5/920 48.5(4) 0.45 OM--780--4L
MMRF1020--04GNR3 I720–961 100 Avg. W--CDMA 48 19.5/920 48.5(4) 0.45 OM--780G--4L
(1)Product under development.
(2)To be introduced: a) 2Q16; b) 3Q16; c) 4Q16.
(3)U = Unmatched; I = Input; I/O = Input/Output.
(4)In Doherty circuit.
New Product
29
NXP Semiconductors
RF Product Selector Guide
RF Commercial Aerospace
The NXP RF commercial aerospace portfolio offers LDMOS solutions for avionics systems (ground--based and airborne) and
L--Band and S--Band radar applications.
Table 1. Commercial Aerospace — L--Band LDMOS — 960--1400 MHz
Frequency Gain Eff.
Band(3) Pout Test VDD (Typ)/Freq. (Typ) JC
Product MHz Watts Signal Volts dB/MHz %C/W Packaging
MRF6V10010NR4 I/O 960–1400 10 Peak Pulse 50 25/1090 69 1.6 PLD--1.5
MRFE6VS25NR1 UTo 2000 25 CW CW 50 25.5/512 75.0 1.2 TO--270--2
MRFE6VS25GNR1 UTo 2000 25 CW CW 50 25.5/512 75.0 1.2 TO--270G--2
AFIC10275NR1 I 978–1090 250 Peak Pulse 50 32.6/978 61 0.15 TO--270WB--14
AFIC10275GNR1 I978–1090 250 Peak Pulse 50 32.6/978 61 0.15 TO--270WBG--14
MRF6V12250HR5 I/O 960–1215 275 Peak Pulse 50 20.3/1030 65.5 0.08 NI--780H--2L
MRF6V12250HSR5 I/O 960–1215 275 Peak Pulse 50 20.3/1030 65.5 0.08 NI--780S--2L
MRF6V14300HR5 I/O 1200–1400 330 Peak Pulse 50 18/1400 60.5 0.13 NI--780H--2L
MRF6V14300HSR5 I/O 1200–1400 330 Peak Pulse 50 18/1400 60.5 0.13 NI--780S--2L
MRF6V12500HR5 I/O 965–1215 500 Peak Pulse 50 19.7/1400 62 0.044 NI--780H--2L
MRF6V12500HSR5 I/O 965–1215 500 Peak Pulse 50 19.7/1400 62 0.044 NI--780S--2L
MRF6V12500GSR5I/O 965–1215 500 Peak Pulse 50 19.7/1400 62 0.044 NI--780GS--2L
AFV121KHR5I/O 960–1215 1000 Peak Pulse 50 17.4/1090 52.2 0.017 NI--1230H--4S
AFV121KHSR5I/O 960–1215 1000 Peak Pulse 50 17.4/1090 52.2 0.017 NI--1230S--4S
AFV121KGSR5I/O 960–1215 1000 Peak Pulse 50 17.4/1090 52.2 0.017 NI--1230GS--4L
AFV141KHR5I/O 1200–1400 1000 Peak Pulse 50 17.7/1090 52.1 0.018 NI--1230H--4S
AFV141KHSR5I/O 1200–1400 1000 Peak Pulse 50 17.7/1400 52.1 0.018 NI--1230S--4S
AFV141KGSR5I/O 1200–1400 1000 Peak Pulse 50 17.7/1400 52.1 0.018 NI--1230GS--4L
Table 2. Commercial Aerospace S--Band LDMOS — 2700--2900 MHz
Frequency Gain Eff.
Band(3) Pout Test VDD (Typ)/Freq. (Typ) JC
Product MHz Watts Signal Volts dB/MHz %C/W Packaging
MRF8P29300HR6 I/O 2700–2900 320 Peak Pulse 30 13.3/2900 50.5 0.06 NI--1230H--4S
MRF8P29300HSR6 I/O 2700–2900 320 Peak Pulse 30 13.3/2900 50.5 0.06 NI--1230S--4S
(3)U = Unmatched; I = Input; I/O = Input/Output.
New Product
30
NXP Semiconductors
RF Product Selector Guide
RF Cooking
NXP is leading a transformation from legacy RF power vacuum device-based systems to long--lasting solid-state transistor--based
systems for a wide variety of consumer and commercial cooking applications.
NXP solid-state solutions provide clean, efficient, controllable RF energy while minimizing equipment maintenance and downtime.
Table 1. RF Cooking — 915 MHz
Product
Frequency
Band(3)
MHz
Pout
(Typ)
Watts
Test
Signal
VDD
Volts
Gain
(Typ)/Freq.
dB/MHz
Eff.
(Typ)
%
JC
C/W Packaging
MHT1002NR3 I915 357 CW CW 48 20.7/915 66.9 0.24 OM--780--4L
MHT1002GNR3 I915 357 CW CW 48 20.7/915 66.9 0.24 OM--780G--4L
MHT2001NT1I915 175 CW CW 50 33.9/915 64.8 0.58 TO--270WB--14
Table 2. RF Cooking — 2450 MHz
Product
Frequency
Band(3)
MHz
Pout
(Typ)
Watts
Test
Signal
VDD
Volts
Gain
(Typ)/Freq.
dB/MHz
Eff.
(Typ)
%
JC
C/W Packaging
MHT1000HR5 I/O 2400–2500 140 CW CW 28 13.2/2450 45 0.29 NI--880H--2L
MHT1001HR5 I/O 2400–2500 190 CW CW 28 13.2/2450 46.2 0.22 NI--1230H--4S
MHT1003NR3 I/O 2400–2500 250 CW CW 32 15.9/2450 59 0.26 OM--780--2L
MHE1003N I/O 2400–2500 220 CW CW 26 14.1/2450 62 0.24 OM--780--2L
MHT1004NR3I/O 2400–2500 300 CW CW 32 15.2/2450 57.9 0.24 OM--780--2L
MHT1004GNR3I/O 2400–2500 300 CW CW 32 15.2/2450 57.9 0.24 OM--780G--2L
MHT1006NT1 U728–2700 10 CW CW 28 19.8/2400 55.1 3.7 PLD--1.5W
MHT1008NT1U2400–2500 12.5 CW CW 28 18.6/2450 56.3 2.6 PLD--1.5W
MHT2000NR1 I/O 2400–2500 25 CW CW 28 27.7/2450 43.8 1.2 TO--270WB--16
MHT2000GNR1 I/O 2400–2500 25 CW CW 28 27.7/2450 43.8 1.2 TO--270WBG--16
(3)U = Unmatched; I = Input; I/O = Input/Output.
New Product
31
NXP Semiconductors
RF Product Selector Guide
RF Low Power
Table of Contents
Page
RF General Purpose Amplifiers 32....................
InGaP HBT, GaAs E--pHEMT 32...................
RF Linear Amplifiers 33..............................
InGaP HBT 33...................................
RF Low Noise Amplifiers 34..........................
GaAs E--pHEMT 34..............................
SiGe BiCMOS (includes GPAs) 34..................
RF Control Circuits 35...............................
ADAM (Advanced Doherty Alignment Module) 35.....
Digital Step Attenuator 35.........................
RF High Power Switch 35.........................
RF GaAs Linear Power Transistors 36.................
Linear Transistors — To 5000 MHz 36...............
32
NXP Semiconductors
RF Product Selector Guide
RF General Purpose Amplifiers
NXP’s portfolio of GPAs combine the right level of gain, linearity, noise and power consumption specifications to meet the
industry’s most demanding applications. From high gain, small--signal applications found in consumer and commercial to
industrial applications, NXP GPAs provide an excellent solution.
Table 1. General Purpose Amplifiers — InGaP HBT, GaAs E--pHEMT
Product
Frequency
Band
MHz
Supply
Voltage
(Typ)
Volts
Supply
Current
(Typ)
mA
Small
Signal Gain
(Typ)/Freq.
dB/MHz
P1dB
(Typ)/Freq.
dBm/MHz
3rd Order
Output
Intercept
(Typ)/Freq.
dBm/MHz
NF
(Typ)/Freq.
dB/MHz
JC
C/W Packaging
MMG38151BT1 0–6000 547 17.1/3800 13.4/3800 25/3800 3.5/3800 55 SOT--89
MMG3012NT1 0–6000 570 19/900 18.5/900 34/900 3.8/900 85 SOT--89
MMG3015NT1 0–6000 595 15.5/900 20.5/900 36/900 5.6/900 41.5 SOT--89
MMG3H21NT1 0–6000 590 19.3/900 20.5/900 37/900 5.5/900 38.6 SOT--89
MMG20241HT1 450–3800 578 17.8/2655 23.9/2655 38/2655 2.1/2655 57 SOT--89
MMG3003NT1 40–3600 6.2 180 20/900 24/900 40.5/900 4/900 31.6 SOT--89
MMG15241HT1 500–2800 585 15.9/2140 24/2140 39.4/2140 1.6/2140 59 SOT--89
MMG3014NT1 40–4000 5135 19.5/900 25/900 40.5/900 5.7/900 27.4 SOT--89
MMG3004NT1 400–2200 5250 17/2140 27/2140 44/2140 3.4/2140 23.2 PQFN 5 5
MMG30721BT1900–4300 5134 17.5/2140 26.9/2140 45.8/2140 3.8/2140 33 SOT--89
MMG3005NT1 800–2200 5480 15/2140 30/2140 47/2140 5/2140 21.5 PQFN 5 5
MMG30301B(2a) 1800–3800 5260 16.9/2140 30.1/2140 42/2140 — — SOT--89
MMG3006NT1 400–2400 5850 17.5/900 33/900 49/900 6.6/900 7.8 QFN 4 4
(2)To be introduced: a) 2Q16; b) 3Q16; c) 4Q16.
New Product
33
NXP Semiconductors
RF Product Selector Guide
RF Linear Amplifiers
Table 1. Linear Amplifiers — InGaP HBT
Product
Frequency
Band
MHz
Supply
Voltage
(Typ)
Volts
Supply
Current
(Typ)
mA
Small Signal
Gain
(Typ)/Freq.
dB/MHz
P1dB
(Typ)/Freq.
dBm/MHz
3rd Order
Output
Intercept
(Typ)/Freq.
dBm/MHz Packaging
MMZ09312BT1 400–1000 3--5 74 31.5/900 29.6/900 42/900 QFN 3 3
MMA20312BVT1 1800–2200 3--5 70 27.2/2140 30.5/2140 44.5/2140 QFN 3 3
MMA20312BT1 1800–2200 570 27.2/2140 30.5/2140 44.5/2140 QFN 3 3
MMA25312BT1 2300–2700 3--5 124 26/2500 31/2500 40/2500 QFN 3 3
MMZ09332BT1130–1000 3--5 108 30.5/760 32.8/760 43/760 QFN 3 3
MMZ25332BT1 1500–2800 3--5 390 26.5/2500 33/2500 48/2500 QFN 3 3
MMZ25332B4T11500–2700 3--5 392 26.5/2500 33/2500 48/2500 QFN 4 4
MMZ25333BT1 1500–2700 5265 43/2600 32/2600 42.8/2600 QFN 4 4
MMZ27333BT11500–2700 5430 35.8/2600 32.2/2600 45/2600 QFN 4 4
MMZ38333B(2b) 3400–3800 5330 36/3600 33/3600 —QFN 4 4
(2)To be introduced: a) 2Q16; b) 3Q16; c) 4Q16.
New Product
34
NXP Semiconductors
RF Product Selector Guide
RF Low Noise Amplifiers
Table 1. Low Noise Amplifiers — GaAs E--pHEMT
Product
Frequency
Band
MHz
Supply
Voltage
(Typ)
Volts
Supply
Current
(Typ)
mA
Small
Signal Gain
(Typ)/Freq.
dB/MHz
P1dB
(Typ)/Freq.
dBm/MHz
3rd Order
Output
Intercept
(Typ)/Freq.
dBm/MHz
NF
(Typ)/Freq.
dB/MHz
JC
C/W Packaging
MML20211HT1 1400–2800 560 18.6/2140 21.3/2140 33/2140 0.65/2140 43.4 DFN 2 2
MML09211HT1 400–1400 560 21.3/900 22/900 32.6/900 0.52/900 37.5 DFN 2 2
MML09212HT1 400–1400 5150 37.5/900 22.8/900 37/900 0.52/900 37 QFN 3 3
MML25231HT11000–4000 560 15.2/2500 22.5/2500 35.2/2500 0.54/2500 134 DFN 2 2
MMG20241HT1 450–3800 578 17.8/2655 23.9/2655 38/2655 2.1/2655 57 SOT--89
MMG15241HT1 500–2800 585 15.9/2140 24/2140 39.4/2140 1.6/2140 59 SOT--89
MML20242HT1 1400–2800 5160 34/1950 24/1950 39.5/1950 0.59/1950 40 QFN 3 3
MML09231HT1 700–1400 555 17.2/900 24.5/900 37.4/900 0.36/900 77 DFN 2 2
Table 2. Low Noise and General Purpose Amplifiers — SiGe BiCMOS
Product
RF
Frequency
Range
MHz
Supply
Voltage
Range
Vdc
Supply
Current
(Typ)
mA
Standby
Current
(Typ)
A
Small
Signal Gain
(Typ)/Freq.
dB/MHz
Output IP3
(Typ)/Freq.
dBm/MHz
NF
(Typ)/Freq.
dB/MHz Packaging
System
Applicability
MBC13916NT1 100 to 2500 2.1 to 5.0 4.7 —19/900
11.5/1900
11/900
5.5/1900
1.25/900
2.1/1900
SOT--343R General Purpose
for Smart
Metering, RKE,
VCOs
MBC13917EP 100 to 2500 2.1 to 3.3 4.7 —27/434
24/900
10.9/434
12.4/900
2.3/434
1.2/900
MLPD--6 General Purpose
for Smart
Metering, RKE,
VCOs
MBC13720NT1 400 to 2500 2.3 to 3.0 5 Low
IP3
11 High
IP3
220/900
14/1900
22/900
24/1900
1.2/900
1.38/1900
SOT--363 Smart Metering,
RKE, TPMS,
UHF, ISM,
CDMA, PCS
MC13850EP 400 to 2500 2.3 to 3.0 4.7 Low
IP3
9.9 High
IP3
224.1/470
15/1960
16.4/470
24.5/1960
1.33/470
1.75/1960
MLPD--8 Smart Metering,
RKE, TPMS,
Cellular, UHF,
ISM, CDMA,
PCS
MC13851EP 1000 to 2500 2.3 to 3.0 3.8 418.9/1575
18/1960
15.9/1575
17.1/1960
1.27/1575
1.35/1960
MLPD--8 W--CDMA, PCS,
GPS, Cellular,
2400 ISM
MC13852EP 400 to 1000 2.3 to 3.0 4.4 419.3/434
18.2/900
7.9/434
13.1/900
1.6/434
1.18/900
MLPD--8 Smart Metering,
RKE, Cellular,
UHF, ISM,
CDMA, PCS
New Product
35
NXP Semiconductors
RF Product Selector Guide
RF Control Circuits
Table 1. ADAM (Advanced Doherty Alignment Module)
Advanced Doherty alignment module (ADAM) is an innovative class of highly integrated GaAs MMIC control circuits designed
specifically to optimize the performance of today’s Doherty amplifiers. When combined with Airfast power transistors, these
sophisticated devices improve manufacturing yields and power added efficiency and are available for frequency bands spanning
from 700 MHz to 2700 MHz.
Product
Frequency
Band
MHz
Test
Freq.
MHz
Insertion
Loss
dB
Atten.
Step
Size
dB
Atten.
Control
Range
dB
Phase
Step
Size
()
Phase
Control
Range
()
Pin
(Max)
dBm
IIP3
dBm
Supply
Voltage
Volts
Supply
Current
mA Packaging
MMDS09254HT1700–1000 900 5.5 0.5 7.5 749 25 40 512 QFN 6 6
MMDS20254HT1 1800–2200 2140 5.5 0.5 7.5 749 25 40 512 QFN 6 6
MMDS25254HT1 2300–2700 2650 5.5 0.5 7.5 749 25 40 512 QFN 6 6
Table 2. Digital Step Attenuator
The MMT20303H is an integrated 3-bit attenuator with 1 dB step size, is controlled via a 3-bit parallel interface and operates using
a 3 to 5 V supply. This device is suitable for 3G/4G base station and small cell transmitter applications requiring a band of operation
across 50–4000 MHz.
Product
Frequency
Band
MHz
Test
Freq.
MHz
Insertion
Loss
dB
Atten.
Step
Size
dB
Atten.
Accuracy
(Max)
dB
Atten.
Max.
Range
dB
Pin
(Max)
dBm
IIP3
dBm
Supply
Voltage
Volts Packaging
MMT20303HT150–4000 900 0.7 10.25 730 50 3–5 QFN 3 3
Table 3. RF High Power Switch
The AFS4040 is an integrated single--pole, double--throw RF switch designed for wireless infrastructure RF control and general
high power RF switching applications. It consists of a high power RF FET switch operating from a single 3 or 5 V supply and a
TTL--level T/R control. It features low power consumption with minimal insertion loss compared to existing solutions.
Product
Frequency
Band
MHz
Test
Freq.
MHz
TX IL
dB
Isolation
dB
P1dB
(Typ)
dBm
Supply
Voltage
Volts Packaging
AFS4040(2c) 300–4000 1800 0.35 40 52 5QFN 4 4, 24L
(2)To be introduced: a) 2Q16; b) 3Q16; c) 4Q16.
New Product
36
NXP Semiconductors
RF Product Selector Guide
RF GaAs Linear Power Transistors
NXP GaAs power transistors are made using an InGaAs pHEMT or HFET epitaxial structure for superior RF efficiency and linearity.
The FETs listed in this section are designed for operation in base station infrastructure RF power amplifiers and are grouped
according to frequency range and type of application.
Table 1. Linear Transistors — To 5000 MHz — Class AB
Frequency Pout Gain Eff.
Band(3) (Typ)/Freq Test VDD (Typ)/Freq. (Typ)/Freq. JC
Product MHz Watts/MHz Signal Volts dB/MHz %/MHz C/W Packaging
MRFG35003N6AT1 U500–5000 0.45 Avg./
3550
W--CDMA(6) 610/3550 27/3550 5.9 PLD--1.5
MRFG35005ANT1 U500–5000 0.45 Avg./
3550
W--CDMA(6) 12 11/3550 26/3550 13.7 PLD--1.5
MRFG35010ANT1 U500–5000 1Avg./
3550
W--CDMA(6) 12 10/3550 25/3550 6.5 PLD--1.5
(3)U = Unmatched; I = Input; I/O = Input/Output.
(6)Peak--to--Average Power Ratio = 8.5 dB.
37
NXP Semiconductors
RF Product Selector Guide
RF Packages
AIR CAVITY PACKAGES
Not to scale unless otherwise indicated.
NI--360H--2L NI--400H--2S NI--400S--2S
NI--780H--2L NI--780H--4L NI--780S--2L NI--780GS--2L
NI--780S--4L
NI--780S--2L4S NI--780GS--4L
NI--780S--4L4S NI--780GS--4L4L
NI--780S--4L4L NI--860C3
NI--880S--2LNI--880H--2L NI--880XS--2L NI--880XGS--2L NI--880XS--2L2L
NI--880XS--4L4SNI--880XS--2L4S NI--1230H--4S
NI--1230S--4S NI--1230H--4S4S NI--1230S--4L2L NI--1230S--4S4S
NI--780S--4L2L
NI--360H--2SB
NI--780S--2L2L
NI--780S--2L2LA NI--780GS--2L2LA
NI--1230GS--4L
ACP--1230S--4L2L
38
NXP Semiconductors
RF Product Selector Guide
RF Packages (continued)
OVER--MOLDED PLASTIC PACKAGES
DFN 2 2MLPD--8MLPD--6
SCALE 2:1SCALE 3:1
OM--1230--4L OM--1230G--4L
OM--1230--4L2L
SCALE 2:1
O M -- 2 7 0 -- 8O M -- 2 7 0 -- 2 OM--780G--2LOM--780--2L
OM--780--2L2L OM--780--4L OM--780G--4L
PLD--1.5 PQFN 8 8
PLD--1.5W QFN 4 4, 16L
QFN 3 3
SCALE 3:1
SOT--89
(98ASA00241D)
SCALE 2:1
QFN 6 6
SCALE 2:1 SOT--89
(98ASA10586D)
SCALE 2:1
SOT--363SOT--343R
SCALE 3:1
SCALE 3:1 T O -- 2 7 0 -- 2 TO--270G--2
TO--270WB--4 TO--270WBG--4 TO--270WB--6A TO--270WB--14 TO--270WBG--14
PQFN 5 5
Not to scale unless otherwise indicated.
DFN 4 6
OM--1230--4L2S
QFN 4 4, 24L
SCALE 2:1SCALE 2:1
39
NXP Semiconductors
RF Product Selector Guide
RF Packages (continued)
OVER--MOLDED PLASTIC PACKAGES (continued)
SCALE 1:1
TO--270WBL--16 TO--270WBLG--16
TO--272WB--4 TO--272WB--14 TO--272WB--16
TO--270WBL--4
TO--270WB--17
TO--270WBG--16TO--270WB--16
TO--270WB--15 TO--270WBG--15
TO--270WBG--17
40
NXP Semiconductors
RF Product Selector Guide
RF Tape and Reel Specifications
RF EMBOSSED TAPE AND REEL ORDERING INFORMATION
Package
Tape Width
(mm)
Pitch
mm (inch)
Reel Size
mm (inch)
Devices Per Reel
and Minimum
Order Quantity
Device
Suffix
DFN 2 212 8.0 0.1 (.315 .004) 178 (7) 1,000 T1
NI-360H-2SB 32 24.0 0.1 (.945 .004) 330 (13) 50 R5
NI-400H-2S 32 32.0 0.1 (1.26 .004) 330 (13) 250 R3
NI-400S-2S 32 32.0 0.1 (1.26 .004) 330 (13) 250 R3
NI-780H-2L 56 32.0 0.1 (1.26 .004) 330 (13) 250 R3
NI-780S-2L 56 32.0 0.1 (1.26 .004) 330 (13) 250 R3
NI-780GS-2L 56 32.0 0.1 (1.26 .004) 330 (13) 250 R3
NI-780H-4L 56 32.0 0.1 (1.26 .004) 330 (13) 250 R3
NI-780S-4L 32 28.0 0.1 (1.10 .004) 330 (13) 250 R3
NI-780GS-4L 32 28.0 0.1 (1.10 .004) 330 (13) 250 R3
NI-780S-2L2L 44 28.0 0.1 (1.10 .004) 330 (13) 250 R3
NI-780S-2L2LA 44 28.0 0.1 (1.10 .004) 330 (13) 250 R3
NI-780GS-2L2LA 44 28.0 0.1 (1.10 .004) 330 (13) 250 R3
NI-780S-2L4S 44 28.0 0.1 (1.10 .004) 330 (13) 250 R3
NI-780S-4L2L 44 28.0 0.1 (1.10 .004) 330 (13) 250 R3
NI-780S-4L4L 44 28.0 0.1 (1.10 .004) 330 (13) 250 R3
NI-780GS-4L4L 44 28.0 0.1 (1.10 .004) 330 (13) 250 R3
NI-780S-4L4S 44 28.0 0.1 (1.10 .004) 330 (13) 250 R3
NI-860 56
56
28.0 0.1 (1.10 .004)
28.0 0.1 (1.10 .004)
330 (13)
330 (13)
250
50
R3
R5
NI-880H-2L 56 32.0 0.1 (1.26 .004) 330 (13) 250 R3
NI-880S-2L 56 32.0 0.1 (1.26 .004) 330 (13) 250 R3
NI-880XS-2L 56 28.0 0.1 (1.10 .004) 330 (13) 250 R3
NI-880XGS-2L 56 28.0 0.1 (1.10 .004) 330 (13) 250 R3
NI-880XS-2L4S 56 28.0 0.1 (1.10 .004) 330 (13) 250 R3
NI-880XS-4L4S 56 28.0 0.1 (1.10 .004) 330 (13) 250 R3
NI-1230H-4S 56
56
32.0 0.1 (1.26 .004)
32.0 0.1 (1.26 .004)
330 (13)
330 (13)
150
50
R6
R5
NI-1230S-4S 56
56
32.0 0.1 (1.26 .004)
32.0 0.1 (1.26 .004)
330 (13)
330 (13)
150
50
R6
R5
NI-1230S-4L2L 56 32.0 0.1 (1.26 .004) 330 (13) 150 R6
NI-1230GS-4L 56 32.0 0.1 (1.26 .004) 330 (13) 150 R6
NI-1230H-4S4S 56 32.0 0.1 (1.26 .004) 330 (13) 150 R6
NI-1230S-4S4S 56 32.0 0.1 (1.26 .004) 330 (13) 150 R6
OM-780-2L 32 28.0 0.1 (1.10 .004) 330 (13) 250 R3
OM-780G-2L 32 28.0 0.1 (1.10 .004) 330 (13) 250 R3
OM-780-2L2L 32 28.0 0.1 (1.10 .004) 330 (13) 250 R3
OM-780-4L 32 28.0 0.1 (1.10 .004) 330 (13) 250 R3
OM-780G-4L 32 28.0 0.1 (1.10 .004) 330 (13) 250 R3
OM-780-4L2L 32 28.0 0.1 (1.10 .004) 330 (13) 250 R3
OM-880X-2L2L 56 28.0 0.1 (1.10 .004) 330 (13) 250 R3
OM-1230-4L2L 56 32.0 0.1 (1.26 .004) 330 (13) 150 R6
OM-1230-4L2S 56 32.0 0.1 (1.26 .004) 330 (13) 150 R6
(continued)
41
NXP Semiconductors
RF Product Selector Guide
RF Tape and Reel Specifications (continued)
RF EMBOSSED TAPE AND REEL ORDERING INFORMATION (continued)
Package
Tape Width
(mm)
Pitch
mm (inch)
Reel Size
mm (inch)
Devices Per Reel
and Minimum
Order Quantity
Device
Suffix
OM-1230-4L 56 32.0 0.1 (1.26 .004) 330 (13) 150 R6
OM-1230G-4L 56 32.0 0.1 (1.26 .004) 330 (13) 150 R6
OM-270-2 24 16.0 0.1 (.631 .004) 178 (7) 50 R5
PLD-1.5 16
16
8.0 0.1 (.315 .004)
8.0 0.1 (.315 .004)
330 (7)
330 (7)
1,000
100
T1
R4
PLD-1.5W 16
16
8.0 0.1 (.315 .004)
8.0 0.1 (.315 .004)
330 (7)
330 (7)
1,000
100
T1
R4
PQFN 5 516 8.0 0.1 (.315 .004) 330 (13) 1,000 T1
PQFN 8 816 12.0 0.1 (.472 .004) 330 (13) 1,000 T1
QFN 3 312 8.0 0.1 (.315 .004) 178 (7) 1,000 T1
QFN 4 412 8.0 0.1 (.315 .004) 330 (13) 1,000 T1
QFN 6 616 12.0 0.1 (.472 .004) 178 (7) 1,000 R1
SOT-89 (1) 12 8.0 0.1 (.315 .004) 178 (7) 1,000 T1
SOT-89 (2) 12 8.0 0.1 (.315 .004) 180 (7) 1,000 T1
SOT-363 84.0 0.1 (.157 .004) 178 (7) 3,000 T1
TO-270-2 24 16.0 0.1 (.631 .004) 330 (13) 500 R1
TO-270G-2 24 12.0 0.1 (.471 .004) 330 (13) 500 R1
TO-270WB-4 44 24.0 0.1 (.945 .004) 330 (13) 500 R1
TO-270WBL-4 44 24.0 0.1 (.945 .004) 330 (13) 500 R1
TO-270WBG-4 44 24.0 0.1 (.945 .004) 330 (13) 500 R1
TO-270WB-6A 44 24.0 0.1 (.945 .004) 330 (13) 500 R1
TO-270WB-14 44 24.0 0.1 (.945 .004) 330 (13) 500 R1
TO-270WBG-14 44 24.0 0.1 (.945 .004) 330 (13) 500 R1
TO-270WB-15 44 24.0 0.1 (.945 .004) 330 (13) 500 R1
TO-270WBG-15 44 24.0 0.1 (.945 .004) 330 (13) 500 R1
TO-270WBG-16 44 24.0 0.1 (.945 .004) 330 (13) 500 R1
TO-270WBG-16 44 24.0 0.1 (.945 .004) 330 (13) 500 R1
TO-270WBL-16 44 24.0 0.1 (.945 .004) 330 (13) 500 R1
TO-270WBLG-16 44 24.0 0.1 (.945 .004) 330 (13) 500 R1
TO-270WB-17 44 24.0 0.1 (.945 .004) 330 (13) 500 R1
TO-270WBG-17 44 24.0 0.1 (.945 .004) 330 (13) 500 R1
TO-272-2 44 20.0 0.1 (.631 .004) 330 (13) 500 R1
TO-272WB-4 44 20.0 0.1 (.788 .004) 330 (13) 500 R1
TO-272WB-14 44 20.0 0.1 (.788 .004) 330 (13) 500 R1
TO-272WB-16 44 20.0 0.1 (.788 .004) 330 (13) 500 R1
TO-272WBLG-16 44 24.0 0.1 (.945 .004) 330 (13) 500 R1
1. 98ASA10586D
2. 98ASA00241D
42
NXP Semiconductors
RF Product Selector Guide
Applications and Product Literature
Application Notes of special interest to designers of RF equipment are listed below. This technical documentation is available on
theNXPwebsite.
Application Notes
AN211A Field Effect Transistors in Theory and Practice
AN419 UHF Amplifier Design Using Data Sheet
Design Curves
AN423 Field Effect Transistor RF Amplifier Design
Techniques
AN548A Microstrip Design Techniques for UHF Amplifiers
AN721 Impedance Matching Networks Applied to
RF Power Transistors
AN923 800 MHz Test Fixture Design
AN1032 How Load VSWR Affects Non--Linear Circuits
AN1033 Match Impedances in Microwave Amplifiers
AN1034 Three Balun Designs for Push--Pull Amplifiers
AN1526 RF Power Device Impedances: Practical
Considerations
AN1530 Advanced Amplifier Concept Package
AN1617 Mounting Recommendations for Copper
Tungsten Flanged Transistors
AN1643 RF LDMOS Power Modules for GSM Base
Station Application: Optimum Biasing Circuit
AN1670 60 Watts, GSM 900 MHz, LDMOS Two--Stage
Amplifier
AN1696 Broadband Intermodulation Performance
Development Using the Rohde & Schwarz
Vector Network Analyzer ZVR
AN1907 Solder Reflow Attach Method for High Power RF
Devices in Over--Molded Plastic Packages
AN1908 Solder Reflow Attach Method for High Power RF
Devices in Air Cavity Packages
AN1923 Mounting Method with Mechanical Fasteners
for the MRF19090 and Similar Packages
AN1938 Sensitivity of High Power RF Transistors to
Source and Output Loads
AN1949 Mounting Method for the MHVIC910HR2
(PFP--16) and Similar Surface Mount
Packages
AN1955 Thermal Measurement Methodology of RF Power
Amplifiers
AN1977 Quiescent Current Thermal Tracking Circuit in
the RF Integrated Circuit Family
AN1987 Quiescent Current Control for the RF Integrated
Circuit Device Family
AN3100 General Purpose Amplifier and MMIC Biasing
AN3263 Bolt Down Mounting Method for High Power RF
Transistors and RFICs in Over--Molded Plastic
Packages
AN3778 PCB Layout Guidelines for PQFN/QFN Style
Packages Requiring Thermal Vias for Heat
Dissipation
AN3789 Clamping of High Power RF Transistors and
RFICs in Over--Molded Plastic Packages
AN4005 Thermal Management and Mounting Method for
the PLD 1.5 RF Power Surface Mount
Package
Product Literature
BR1610 RF Power Tool System Brochure
BR1611 RF Aerospace and Defense Solutions
Brochure
AIRFASTWBFWP Advances in Freescale Airfast RFICs
White Paper
RFLNAWP Practical Considerations for Low Noise
Amplifier Design White Paper
RFPLASTICWP Designing with Plastic RF Power
Transistors White Paper
SG46 RF Product Selector Guide
SMCELLRFWP Small Cells Call for Scalable Architecture
White Paper
50VRFLDMOSWP 50 V RF LDMOS White Paper
43
NXP Semiconductors
RF Product Selector Guide
SELECTOR GUIDE PRODUCT INDEX
Page
Device Number Number........................
A2G22S160--01SR3 20.............................
A2G22S251--01SR3 21.............................
A2G26H281--04S 21...............................
A2G35S160--01SR3 22.............................
A2G35S200--01SR3 22.............................
A2I08H040GNR1 18...............................
A2I08H040NR1 18.................................
A2I20D020GNR1 19...............................
A2I20D020NR1 19.................................
A2I20D040GNR1 19...............................
A2I20D040NR1 19.................................
A2I20H060GNR1 19...............................
A2I20H060NR1 19.................................
A2I20H080GNR1 19...............................
A2I20H080NR1 19.................................
A2I22D050GNR1 19...............................
A2I22D050NR1 19.................................
A2I25D012GNR1 21...............................
A2I25D012NR1 21.................................
A2I25D025GNR1 21...............................
A2I25D025NR1 21.................................
A2I25H060GNR1 21...............................
A2I25H060NR1 21.................................
A2I35H060GNR1 22...............................
A2I35H060NR1 22.................................
A2T07D160W04SR3 18............................
A2T07H310--24SR6 19.............................
A2T08VD020NT1 18...............................
A2T09D400--23NR6 19.............................
A2T09VD250NR1 18...............................
A2T09VD300NR1 18...............................
A2T18H100--25SR3 20.............................
A2T18H160--24SR3 19.............................
A2T18H410--24SR6 20.............................
A2T18H450W19SR6 20............................
A2T18H455W23NR6 20............................
A2T18S160W31GSR3 20...........................
A2T18S160W31SR3 20............................
A2T18S162W31GSR3 19...........................
A2T18S165--12S 20................................
A2T18S260--12S 20................................
A2T18S260W12NR3 19............................
Page
Device Number Number........................
A2T20H160W04NR3 20............................
A2T20H330W24N 20...............................
A2T20H330W24SR6 20............................
A2T21H100--25SR3 20.............................
A2T21H360--23NR6 21.............................
A2T21H360--24SR6 21.............................
A2T21H410--24SR6 21.............................
A2T21H450W19SR6 21............................
A2T21S160--12SR3 20.............................
A2T21S260--12SR3 21.............................
A2T23H160--24SR3 21.............................
A2T23H300--24SR6 21.............................
A2T26H160--24SR3 21.............................
A2T26H165--24SR3 21.............................
A2T26H300--24SR6 21.............................
A2V09H300--04NR3 19.............................
AFG24S100HR5 23................................
AFIC10275GNR1 29...............................
AFIC10275NR1 29.................................
AFIC901NT1 25...................................
AFM906 25.......................................
AFS4040 35.......................................
AFT05MP075GNR1 25.............................
AFT05MP075NR1 25...............................
AFT05MS003NT1 25...............................
AFT05MS004NT1 25...............................
AFT05MS006NT1 25...............................
AFT05MS031GNR1 25.............................
AFT05MS031NR1 25...............................
AFT09H310--03GSR6 19...........................
AFT09H310--03SR6 19.............................
AFT09MP055GNR1 25.............................
AFT09MP055NR1 25...............................
AFT09MS007NT1 25...............................
AFT09MS015NT1 25...............................
AFT09MS031GNR1 25.............................
AFT09MS031NR1 25...............................
AFT09S200W02GNR3 18...........................
AFT09S200W02NR3 18............................
AFT09S200W02SR3 18............................
AFT09S220--02NR3 18.............................
AFT09S282NR3 18................................
44
NXP Semiconductors
RF Product Selector Guide
Selector Guide Product Index (continued)
Page
Device Number Number........................
AFT18H356–24SR6 20.............................
AFT18H357--24NR6 20.............................
AFT18H357–24SR6 20.............................
AFT18HW355SR6 20..............................
AFT18P350--4S2LR6 20............................
AFT18S230--12NR3 19.............................
AFT18S230SR3 19................................
AFT18S260W31GSR3 20...........................
AFT18S260W31SR3 20............................
AFT18S290--13SR3 20.............................
AFT20P060--4GNR3 20.............................
AFT20P060--4NR3 20..............................
AFT20P140--4WGNR3 20...........................
AFT20P140--4WNR3 20............................
AFT20S015GNR1 19, 21...........................
AFT20S015NR1 19, 21............................
AFT21H350W03SR6 21............................
AFT21H350W04GSR6 21...........................
AFT21S140W02GSR3 20...........................
AFT21S140W02SR3 20............................
AFT21S220W02GSR3 20...........................
AFT21S220W02SR3 20............................
AFT21S230--12SR3 20.............................
AFT21S230SR3 20................................
AFT21S232SR3 21................................
AFT21S240–12SR3 21.............................
AFT23H160--25SR3 21.............................
AFT23H200--4S2LR6 21............................
AFT23H201--24S 21................................
AFT23S160W02GSR3 21...........................
AFT23S160W02SR3 21............................
AFT23S170--13SR3 21.............................
AFT26H050W26SR3 21............................
AFT26H160--4S4R3 21.............................
AFT26H200W03SR6 21............................
AFT26H250–24SR6 21.............................
AFT26H250W03SR6 21............................
AFT26HW050GSR3 21.............................
AFT26HW050SR3 21..............................
AFT26P100--4WGSR3 21...........................
AFT26P100--4WSR3 21............................
AFT27S006NT1 18, 22.............................
AFT27S010NT1 18, 22.............................
Page
Device Number Number........................
AFV09P350--04GNR3 19...........................
AFV09P350--04NR3 19.............................
AFV121KGSR5 29.................................
AFV121KHR5 29..................................
AFV121KHSR5 29.................................
AFV141KGSR5 29.................................
AFV141KHR5 29..................................
AFV141KHSR5 29.................................
MBC13720NT1 34.................................
MBC13916NT1 34.................................
MBC13917EP 34..................................
MC13850EP 34....................................
MC13851EP 34....................................
MC13852EP 34....................................
MD7IC1812GNR1 19...............................
MD7IC1812NR1 19................................
MD7IC2012GNR1 19...............................
MD7IC2012NR1 19................................
MD7IC2250GNR1 19...............................
MD7IC2250NBR1 19...............................
MD7IC2251GNR1 19...............................
MD7IC2251NR1 19................................
MD7IC2755GNR1 21...............................
MD7IC2755NR1 21................................
MD8IC925GNR1 18................................
MD8IC925NR1 18.................................
MD8IC970GNR1 18, 25............................
MD8IC970NR1 18, 25.............................
MHE1003N 30.....................................
MHT1000HR5 30..................................
MHT1001HR5 30..................................
MHT1002GNR3 30.................................
MHT1002NR3 30..................................
MHT1003NR3 30..................................
MHT1004GNR3 30.................................
MHT1004NR3 30..................................
MHT1006NT1 30..................................
MHT1008NT1 30..................................
MHT2000GNR1 30.................................
MHT2000NR1 30..................................
MHT2001NT1 30..................................
MMA20312BT1 33.................................
MMA20312BVT1 33................................
45
NXP Semiconductors
RF Product Selector Guide
Selector Guide Product Index (continued)
Page
Device Number Number........................
MMA25312BT1 33.................................
MMDS09254HT1 35................................
MMDS20254HT1 35................................
MMDS25254HT1 35................................
MMG15241HT1 32, 34.............................
MMG20241HT1 32, 34.............................
MMG3003NT1 32..................................
MMG3004NT1 32.................................
MMG3005NT1 32..................................
MMG3006NT1 32..................................
MMG3012NT1 32..................................
MMG3014NT1 32..................................
MMG3015NT1 32..................................
MMG30301B 32...................................
MMG30721BT1 32.................................
MMG38151BT1 32.................................
MMG3H21NT1 32..................................
MML09211HT1 34.................................
MML09212HT1 34.................................
MML09231HT1 34.................................
MML20211HT1 34.................................
MML20242HT1 34.................................
MML25231HT1 34.................................
MMRF1004GNR1 26...............................
MMRF1004NR1 26.................................
MMRF1005HR5 27.................................
MMRF1005HSR5 27...............................
MMRF1006HR5 27.................................
MMRF1006HSR5 27...............................
MMRF1007HR5 27.................................
MMRF1007HSR5 27...............................
MMRF1008GHSR5 27..............................
MMRF1008HR5 27.................................
MMRF1008HSR5 27...............................
MMRF1009HR5 27.................................
MMRF1009HSR5 27...............................
MMRF1011HR5 27.................................
MMRF1011HSR5 27...............................
MMRF1012NR1 26, 28.............................
MMRF1013HR5 27.................................
MMRF1013HSR5 27...............................
MMRF1014NT1 26.................................
MMRF1015GNR1 26...............................
Page
Device Number Number........................
MMRF1015NR1 26.................................
MMRF1016HR5 27, 28.............................
MMRF1017NR3 26.................................
MMRF1018NBR1 28...............................
MMRF1018NR1 28.................................
MMRF1019NR4 27.................................
MMRF1020--04GNR3 26, 28........................
MMRF1020--04NR3 26, 28.........................
MMRF1021NT1 28.................................
MMRF1022HSR5 28...............................
MMRF1023HSR5 28...............................
MMRF1024HSR5 28...............................
MMRF1304GNR1 26, 27, 28........................
MMRF1304LR5 26, 27, 28..........................
MMRF1304NR1 26, 27, 28..........................
MMRF1305HR5 26, 27, 28..........................
MMRF1305HSR5 26, 27, 28........................
MMRF1306HR5 27, 28.............................
MMRF1306HSR5 27, 28...........................
MMRF1308HR5 27, 28.............................
MMRF1308HSR5 27, 28...........................
MMRF1310HR5 26, 28.............................
MMRF1310HSR5 26, 28...........................
MMRF1311HR5 26.................................
MMRF1312GSR5 27...............................
MMRF1312HR5 27.................................
MMRF1312HSR5 27...............................
MMRF1314GSR5 27...............................
MMRF1314HR5 27.................................
MMRF1314HSR5 27...............................
MMRF1315NR1 26, 28.............................
MMRF1316NR1 26, 27.............................
MMRF1317HR5 27.................................
MMRF1317HSR5 27...............................
MMRF1318NR1 26, 27, 28..........................
MMRF1320GNR1 28...............................
MMRF1320NR1 28.................................
MMRF2004NBR1 26...............................
MMRF2005GNR1 26...............................
MMRF2005NR1 26.................................
MMRF2006NT1 26.................................
MMRF2007GNR1 26...............................
MMRF2007NR1 26.................................
46
NXP Semiconductors
RF Product Selector Guide
Selector Guide Product Index (continued)
Page
Device Number Number........................
MMRF2010GNR1 27...............................
MMRF2010NR1 27.................................
MMRF5011N 28...................................
MMRF5013N 28...................................
MMRF5014HR5 28.................................
MMRF5015NR5 28.................................
MMRF5019N 28...................................
MMRF5021H 28...................................
MMRF5023N 28...................................
MMRF5300NR5 27.................................
MMT20303HT1 35.................................
MMZ09312BT1 33.................................
MMZ09332BT1 33.................................
MMZ25332B4T1 33................................
MMZ25332BT1 33.................................
MMZ25333BT1 33.................................
MMZ27333BT1 33.................................
MMZ38333B 33....................................
MRF1K50GN 23...................................
MRF1K50H 23.....................................
MRF1K50N 23.....................................
MRF24300NR3 24.................................
MRF5S9080NBR1 18..............................
MRF6S18060NR1 20...............................
MRF6S19140HSR3 20.............................
MRF6S20010GNR1 19.............................
MRF6S20010NR1 19...............................
MRF6S24140HSR3 24.............................
MRF6S27015NR1 21...............................
MRF6V10010NR4 29...............................
MRF6V12250HR5 29...............................
MRF6V12250HSR5 29.............................
MRF6V12500GSR5 29.............................
MRF6V12500HR5 29...............................
MRF6V12500HSR5 29.............................
MRF6V14300HR5 29...............................
MRF6V14300HSR5 29.............................
MRF6V2010GNR1 23..............................
MRF6V2010NR1 23................................
MRF6V3090NBR1 24..............................
MRF6V3090NBR5 24..............................
MRF6V3090NR1 24................................
MRF6V3090NR5 24................................
Page
Device Number Number........................
MRF6VP3091NBR1 24.............................
MRF6VP3091NR1 24..............................
MRF6VP3450HR5 24..............................
MRF6VP3450HR6 24..............................
MRF6VP3450HSR5 24.............................
MRF7P20040HSR3 20.............................
MRF7S19170HSR3 20.............................
MRF7S21080HSR3 20.............................
MRF7S21150HSR3 20..............................
MRF7S24250NR3 24...............................
MRF7S27130HSR3 21.............................
MRF8HP21080HR3 20.............................
MRF8HP21080HSR3 20............................
MRF8P20100HSR3 20.............................
MRF8P20140WGHSR3 20..........................
MRF8P20140WHR3 20.............................
MRF8P20140WHSR3 20...........................
MRF8P20160HR3 20...............................
MRF8P20160HSR3 20.............................
MRF8P20161HSR3 20.............................
MRF8P20165WHR3 20.............................
MRF8P23080HSR3 21.............................
MRF8P23160WHSR3 21...........................
MRF8P26080HSR3 21.............................
MRF8P29300HR6 29...............................
MRF8P29300HSR6 29.............................
MRF8P8300HR6 18................................
MRF8P8300HSR6 18..............................
MRF8P9040GNR1 18..............................
MRF8P9040NR1 18................................
MRF8P9210NR3 18................................
MRF8P9300HSR6 19..............................
MRF8S18120HSR3 19.............................
MRF8S18210WGHSR3 20..........................
MRF8S18210WHSR3 20...........................
MRF8S18260HSR6 19.............................
MRF8S21100HSR3 20..............................
MRF8S21120HSR3 20..............................
MRF8S21200HSR6 20.............................
MRF8S7120NR3 18................................
MRF8S7170NR3 18................................
MRF8S7235NR3 18................................
MRF8S9100HSR3 18..............................
47
NXP Semiconductors
RF Product Selector Guide
Selector Guide Product Index (continued)
Page
Device Number Number........................
MRF8S9102NR3 18................................
MRF8S9120NR3 18................................
MRF8S9170NR3 18................................
MRF8S9200NR3 18................................
MRF8S9202GNR3 18..............................
MRF8S9220HSR3 18..............................
MRF8S9232NR3 18................................
MRF8S9260HSR3 18..............................
MRF8VP13350GNR3 24, 25........................
MRF8VP13350NR3 24, 25.........................
MRFE6S9045NR1 18..............................
MRFE6S9046GNR1 18.............................
MRFE6S9060NR1 18, 24, 25.......................
MRFE6S9125NBR1 18.............................
MRFE6S9125NR1 18..............................
MRFE6S9160HSR3 18.............................
MRFE6VP100HR5 23..............................
MRFE6VP100HSR5 23.............................
MRFE6VP5150GNR1 23............................
MRFE6VP5150NR1 23.............................
MRFE6VP5300GNR1 23............................
MRFE6VP5300NR1 23.............................
MRFE6VP5600HR6 23.............................
MRFE6VP5600HSR5 23............................
MRFE6VP61K25GNR6 23..........................
MRFE6VP61K25GSR5 23..........................
MRFE6VP61K25HR5 23............................
MRFE6VP61K25HR6 23............................
MRFE6VP61K25HSR5 23..........................
MRFE6VP61K25NR6 23............................
MRFE6VP6300GSR5 23............................
MRFE6VP6300HR3 23.............................
MRFE6VP6300HSR5 23............................
Page
Device Number Number........................
MRFE6VP6600GNR3 23............................
MRFE6VP6600NR3 23.............................
MRFE6VP8600HR5 24.............................
MRFE6VP8600HSR5 24............................
MRFE6VS25GNR1 23, 29..........................
MRFE6VS25LR5 23................................
MRFE6VS25NR1 23, 29...........................
MRFE8VP8600HR5 24.............................
MRFG35003N6AT1 36..............................
MRFG35005ANT1 36..............................
MRFG35010ANT1 36..............................
MW6IC1940NBR1 19...............................
MW6S004NT1 18, 19..............................
MW6S010GNR1 18, 19............................
MW6S010NR1 18, 19..............................
MW7IC2020NT1 19................................
MW7IC2040NBR1 19...............................
MW7IC2040NR1 19................................
MW7IC2220GNR1 19..............................
MW7IC2220NBR1 19...............................
MW7IC2220NR1 19................................
MW7IC2240GNR1 19..............................
MW7IC2240NR1 19................................
MW7IC2425GNR1 24..............................
MW7IC2425NBR1 24...............................
MW7IC2725GNR1 21..............................
MW7IC2725NR1 21................................
MW7IC915NT1 18.................................
MW7IC930GNR1 18...............................
MW7IC930NBR1 18................................
MW7IC930NR1 18.................................
MWE6IC9080NBR1 18.............................
MWE6IC9100NBR1 18.............................
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Rev. 43
5/2016
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