SILICON EPITAXIAL PLANAR TYPE HN2D01F Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. 402 28-03 . HN2pNO1F is composed of 3 independent diodes. ie 82 . Low Forward Voltage : VF=0.98V (Typ.) | in Fast Reverse Recovery Time trr=l.6ns (Typ.) al al a] | | 6 5 So 2s Small Total Capacitance CT=0.5pF (Typ.) i % ol SH | (E+ ried nN alan 2 5 S 1 Ss A | AG MAXIMUM RATINGS (Ta=25C) a2 CHARACTERISTIC SYMBOL | RATING | UNIT a3 | 7 Fi 1 Maximum(Peak) Reverse Voltage VRM 85 Vv = | L a} Reverse Voltage VR 80 Vv tL. CATHODE ; Maximum(Peak) Forward Current Tem 240* mA 2. CATHODE . CA DE Average Forward Current To 80* mA snone 1c}-+4- 4 . es Surge Current (10ms) IFSM 1* A 5. ANODE 2 - ; 6. ANODE scp eps Power Dissipation P 300 mW JEDEC _ Junction Temperature Tj 125 C ELAJ _ Storage Temperature Tstg ~55~125 C TOSHIBA 1-3K1C Yet : * : This is the Maximum Ratings of single diode (Ql or Q2 or Q3). Weight: 0.0148 In the case of using 2 or 3 diodes, the Maximum Ratings per diode is 75% of the single diode one. ELECTRICAL CHARACTERISTICS (Q1,Q2,Q3 COMMON Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.] MNAX.[ UNIT VF(1) Ip=lmA - 0.62 - Forward Voltage VF(2) Ip=10mA - 0.75 - v Vr(3) | Ip=l00mA - |0.98 ]1.20 I VR=30V - ~ O.1 Reverse Current RQ) R vA Ir(2) | VR=80V - - | 0.5 Total Capacitance CT Vr=0, f=LMHz - 0.5 3.0 pF Reverse Recovery Time trr Ip=lOmA (Fig.1) - 1.6 4.0 ns PIN ASSIGNMENT (TOP VIEW) Marking A C A 6 5 4 Ql Q3 y Al Q2 2 3 1 2 3 1277 HN2D01F Fig. 1 : REVERSE RECOVERY TIME (trr) TEST CIRCUIT INPUT WAVEFORM 0.01laF DUT 0 IN OUT 3 g | OSCILLOSCOPE N -6y =50. 6V Dol 8 : 3 CRIN=50Q) 50ns PULSE GENERATOR (RouT=500) Ip _ Vp Ip (mA) FORWARD CURRENT TOTAL CAPACITANCE Cy (pF) a _ 2 0.3 0.1 0.03 0.015 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE Vf (V) Cy VR i 3.95 10 30 50 100 REVERSE VOLTAGE Vp (V) 1278 Ip (4A) REVERSE CURRENT 300n 100n OUTPUT WAVEFORM Ip=10mA 0 Ig 0.1 Ip In VR Ta=100C 20 40 60 80 REVERSE VOLTAGE Vp ()