© 2006 IXYS All rights reserved 1 - 4
VVZB 120
0627
VCES TVJ = 25°C to 150°C 1200 V
VGE Continuous ± 20 V
IC25 Tcase = 25°C, DC 140 A
IC80 Tcase = 80°C, DC 100 A
ICM tp= Pulse width limited by TVJM 280 A
Ptot Tcase = 80°C 570 W
VRRM 1200 V
IF(AV) Tcase = 80°C, rectangular d = 0.5 27 A
IF(RMS) Tcase = 80°C, rectangular d = 0.5 38 A
IFRM Tcase = 80°C, tP = 10 µs, f = 5 kHz tbd A
IFSM TVJ = 45°C, t = 10 ms 200 A
TVJ = 150°C, t = 10 ms 180 A
Ptot Tcase = 80°C 64 W
Symbol Conditions Maximum Ratings
IdAV Tcase= 80°C, sinusoidal 120° 120 A
IFRMS/ITRMS Tcase= 80°C, per leg 77 A
IFSM/ITSM TVJ = 25°C, t = 10 ms, VR = 0 V 750 A
TVJ = 150°C, t = 10 ms, VR = 0 V 670 A
I2tTVJ = 25°C, t = 10 ms, VR = 0 V 2810 A
TVJ = 150°C, t = 10 ms, VR = 0V 2240 A
(di/dt)cr TVJ = TVJM repetitive, IT = 150 A 150 A/µs
f = 50 Hz, tP = 200 µs
VD = 2/3 VDRM
IG = 0.45 A, non repetitive, IT = Id(AV) /3 500 A/µs
diG/dt = 0.45 A/µs
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/µs
RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = TVJM tP = 30 µs 10 W
IT = Id(AV) /3 tP = 300 µs 5 W
tP = 10 ms 1 W
PGAVM 0.5 W
VRRM Type
V
1200 VVZB 120-12 io2(T)
1600 VVZB 120-16 io2(T)
(T) = NTC optional
IGBT
Fast Recovery Diode Rectifier Bridge
Features
• Soldering connections for PCB
mounting
• Isolation voltage 3600 V~
• Ultrafast freewheel diode
• Convenient package outline
• Optional NTC
Applications
• Drive Inverters with brake system
Advantages
• 2 functions in one package
• No external isolation
• Easy to mount with two screws
• Suitable for wave soldering
• High temperature and power cycling
capability
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
VRRM = 1200/1600 V
IdAV = 120 A
Three Phase Half Controlled
Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
Preliminary data
© 2006 IXYS All rights reserved 2 - 4
VVZB 120
0627
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IR, IDVR = VRRM/VDRM 0.3 mA
VR = VRRM/VDRM; TVJ = 150°C 5 mA
VF, VTIF = 100 A 1.47 V
VT0 For power-loss calculations only 0.85 V
rTTVJ = 150°C 5 mΩ
VGT VD= 6 V; TVJ = 25°C 1.5 V
TVJ = -40°C 1.6 V
IGT VD= 6 V; TVJ = 25°C 100 mA
TVJ = -40°C 200 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM 0.2 V
IGD TVJ = TVJM;V
D = 2/3 VDRM 10 mA
ILVD = 6 V; tG = 30 µs 450 mA
diG/dt = 0.45 A/µs; IG = 0.45 A
IHTVJ = TVJM; VD = 6 V; RGK = ∞200 mA
tgd VD = ½ VDRM 2µs
diG/dt = 0.45 A/µs; IG = 0.45 A
tqTVJ = TVJM; VR = 100 V; VD = 2/3 VDRM; tP = 200 µs 150 µs
dv/dt = 10 V/µs; IT = 120 A; -di/dt = 10 A/µs
QS TVJ = TVJM 90 µC
IRM -di/dt = 0.64 A/µs; IT/IF = 50 A 11 A
RthJC per thyristor/diode; sine 120° el. 1 K/W
RthJH per thyristor/diode; sine 120° el. 1.3 K/W
VBR(CES) VGS = 0 V; IC = 1 mA 1200 V
VGE(th) IC = 4 mA 4.5 6.5 V
IGES VGE = ± 20 V 500 nA
ICES VCE = VCES 0.2 mA
VCE = VCES; TVJ = 125°C 1 mA
VCEsat VGE = 15 V; IC = 50 A 2.1 V
tSC VGE = 15 V; VCE = 900 V; TVJ = 125°C 10 µs
(SCSOA) RG = 15 Ω; non repetitive
RBSOA VGE = 15 V; VCE = 1200 V; TVJ = 125°C 150 A
RG = 15 Ω; Clamped Inductive load; L = 100 µH
Cies VCE = 25 V; f = 1 MHz; VGE = 0 V 5.7 nF
td(on) 170 ns
td(off) 680 ns
Eon 11 mJ
Eoff 8mJ
RthJC 0.22 K/W
RthCH 0.1 K/W
IGBT Rectifier Bridge
VCE = 600 V; IC = 50 A
VGE = 15 V; RG = 15 Ω
Inductive load; L = 100 µH
TVJ = 125°C
© 2006 IXYS All rights reserved 3 - 4
VVZB 120
0627
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IRVR = VRRM;T
VJ = 25°C 0.75 mA
VR = 0.8 VRRM;T
VJ = 150°C 3 7 mA
VFIF = 30 A; TVJ = 25°C 2.55 V
VT0 For power-loss calculations only 1.65 V
rTTVJ = 150°C 18.2 mΩ
IRM IF = 30 A; -diF /dt = 240 A/µs 16 18 A
VR = 100 V
trr IF = 1 A; -diF /dt = 100 A/µs 40 60 ns
VR = 30 V
RthJC 1.1 K/W
RthJH 1.5 K/W
Common Specification Maximum Ratings
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz t = 1 min 3000 V~
IISOL ≤ 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2-2.5 Nm
(10-32 UNF) 18-22 lb.in.
Weight typ. 80 g
dSCreep distance on surface 12.7 mm
dAStrike distance in air 11 mm
aMaximum allowable acceleration 50 m/s2
min. typ. max.
R25 Thermistor 4.75 5.0 5.25 kΩ
B25/100 3375 K
Fast Recovery Diode
Module
© 2006 IXYS All rights reserved 4 - 4
VVZB 120
0627
Dimensions in mm (1 mm = 0.0394")
±0.3
±0.15
±0.3
R
R
R1
80
78.5
93
17
13
4x45°
40.4
±0.25
38
0.25
65
40
Aufdruck der Typenbezeichnung
(Klebeetikett)
±0.2
32
23.8
5.5
5.5
15.415.4
0.5
16.8
24.2 28.8
9.8
2.47.1
16.6
±0.3
±0.3±0.3
±0.3
±0.3
±0.3
±0.3
±0.3
±0.3
±0.3
2
0.8
±0.3
11.7
5.5
±0.3
4.5±0.5
M 2:1
(4)
Ø 2.1
Ø 2.5
Ø 6.1
1.5
6.0
Detail X
X
6
9
10
8
7
5
4
3
2
1
F
C
B
A
E
D
H
G
L
K
I
F
C
B
A
D
E
G
H
K
I
L
10
6
S
O
M
N
R
P
9
U
T
V
W
8
7
S
O
M
N
P
R
T
U
5
W
V
4
2
3
1
Y
M 5:1
1.5 +0.6-0.3
Ø1.5 (DIN 46 431)
0.5±0.2
Detail Y
NTC
