F 0235D
GaAs-Infrarot-Lumineszenzdiode (950 nm, 250 µm Kantenlänge)
GaAs Infrared Emitting Diode (950 nm, 10 mil)
Vorläufige Daten / Preliminary data
2002-02-21 1
Wesentliche Merkmale
• Typ. Gesamtleistung: 13 mW @ 100 mA im
TOPLED® Gehäuse
•Chipgröße 250 x 250 µm2
•Wellenlänge der Strahlung 950 nm
•GaAs-LED mit sehr hohem Wirkungsgrad
•Gute Linearität (Ie = f [IF]) bei hohen Strömen
•Gleichstrom- oder Impulsbetrieb möglich
•Hohe Zuverlässigkeit
•Hohe Impulsbelastbarkeit
Anwendungen
•Miniaturlichtschranken für Gleich- und
Wechsellichtbetrieb, Lochstreifenleser
•Industrieelektronik
•Bandende Erkennung (z.B. Videorecorder)
•Datenübertragung
•Positionsüberwachung
•Barcode-Leser
•Automobiltechnik
•Sensorik
•Alarm- und Sicherungssysteme
•IR-Freiraumübertragung
•Optokoppler
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
F 0235D Q67220-C1263 Infrarot emittierender Chip, Oberseite Anodenanschluß,
Rückseite AuGe-Eutektikum
Infrared emitting die, top side anode connection, backside
AuGe eutectic alloy
Features
•Typ. total radiant power: 13 mW @ 100 mA in
TOPLED® package.
•Chip size 250 x 250 µm2
•Peak wavelength of 950 nm
•Very highly efficient GaAs LED
•Good linearity (Ie = f [IF]) at high currents
•DC or pulsed operations are possible
•High reliability
•High pulse handling capability
Applications
•Miniature photointerrupters
•Industrial electronics
•Tape end detection (e.g. VCR )
•Data transmission
•Position sensing
•Barcode reader
•Automotive technology
•Sensor technology
•Alarm and safety equipment
•IR free air transmission
•Optocoupler
2002-02-21 2
F 0235D
Elektrische Werte (gemessen auf TO18-Bodenplatte ohne Verguss, TA = 25 °C)
Electrical values (measured on TO18 header without resin, TA = 25 °C)
Bezeichnung
Parameter Symbol
Symbol Wert1)
Value1) Einheit
Unit
min. typ. max.
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 10 mA
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax,
IF = 10 mA
Spectral bandwidth at 50% of Imax
∆λ 55 nm
Sperrspannung
reverse voltage
IR = 10 µA
VR5V
Schaltzeiten, Ie von 10% a uf 90% und von 90% auf
10%, bei IF = 100 mA, RL = 50 Ω
Switching t imes, Ie from 10% to 90% and from
90% to 10%, IF = 100 mA, RL = 50 Ω
tr, tf0.45/
0.35 µs
Durchlaβspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tP = 100ms VF1.4 1.6 V
Gesamtstrahlfluß4)
radiant power4)
IF = 100mA, t = 20 ms
Φe47 mW
F 0235D
2002-02-21 3
Mechanische Werte
Mechanical values
Bezeichnung
Parameter Symbol
Symbol Wert1)
Value1) Einheit
Unit
min. typ. max.
Chipkantenlänge (x-Richtun g)
Length of chip edge (x-direction) Lx0.23 0.25 0.27 mm
Chipkantenlänge (y-Richtun g)
Length of chip edge (y-direction) Ly0.23 0.25 0.27 mm
Durchmesser des Wafers
Diameter of the wafer D76.2 mm
Chiphöhe
Die height H170 185 200 µm
Bondpaddurchmesser
Diameter of bondpad d132 µm
Bezeichnung
Parameter Wert
Value
Vorderseitenmetallisierung
Metallization frontside Aluminium
Aluminum
Rückseitenmetallisierung
Metallization backside AuGe-Eutektikum
AuGe eutectic
Trennverfahren
Dicing Sägen
Sawing
Verbindung Chip - Träger
Die bonding Legieren
Eutectic bonding
F 0235D
2002-02-21 4
Grenzwerte3) (gemessen auf TO18-Bodenplatte ohne Verguss, TA = 25 °C)
Maximum Ratings3) (measured on TO18 header without resign, TA = 25°C)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Maximaler Betriebstemperaturbereich
Maximum operating temperature range Top - 40...+100 °C
Maximaler Lagertemperaturbereich
Maximum storage temperatur range Tstg - 40...+100 °C
Maximaler Durchlaßstrom
Maximum forward current IF100 mA
Maximaler Stoßstrom
maximum surge current
tp = 10 µs, D = 0.005
IS1A
Maximale Sperrschichttemperatur
Maximum junction temperature Tj125 °C
F 0235D
2002-02-21 5
Relative Spectral Emission2) Irel = f (λ)
TA = 25 °C
Forward Current2)
IF= f (VF), Single pulse, tp = 20 µs, TA = 25 °C
Radiant Intensity2)
Single pulse, tP = 20 µs, TA = 25 °C
Permissible Pulse Power2)
Duty cycle D = parameter, TA = 25 °C
OHR01938
λ
rel
Ι
0880 920 960 1000
nm
1060
20
40
60
80
%
100
V
OHF00367
F
10-20
Ι
F
12340.5 1.5 2.5 V
10-1
100
101
102
103
104
mA
Ιe
Ιe 100 mA = f (IF)
OHF00369
10
-1
10
0
10
12
10 10
3
-3
10
-2
10
-1
10
10
0
1
10
e (100 mA)
Ι
Ι
F
e
Ι
mA
t
OHF00373
P
-5
10
10-2
Ι
F
-1
10
0
10
1
10
-4
10 -3
10 -2
10 -1
10 0
10 s 2
10
AD = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
2002-02-21 6
F 0235D
Maßzeichnung
Chip Outlines
Maße werden als typische1) Wer te wie f olgt angegebe n: mm (inch) / Dimensions are specified as typical1) values as
follows: mm (inch).
GMOY6076
0.185 (0.0073)
0.132 (0.0052)
p-contact
n-contact
0.25 (0.0098)
F 0235D
2002-02-21 7
Published by OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform ation gen erally descri bes the type of compone nt and shall not be considered as assured ch aracteristic s or
detaile d sp ec if ic at ion.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substa nc es . For information on the types in question pleas e c ont ac t our s ales organizatio n.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You will have to bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Com pon en ts used in life- su pport devices or system s mu st be expressl y au thorized b y us for su ch p ur p o se!
Critical components5), may only be used in life-support devices or systems6) with the express written approval of
OSRAM OS.
1) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a spe cified value. For final e lectrical te sting a spot check with sufficient st atistical accura cy is carr ied out.
Minimum and maximum values( refered to as min. and max.) refer to the limits of the sample measurement.
2) Based on data measured in OSRAM Opto Semiconductor’s TOPLED® pa c ka ge. T hey represent typical1) data.
3) Maximum ratings are strongly package dependent and may differ between different packages. The values given
represent the chip in an OSRAM OS TO PLED® package and are only valid for this package.
4) Value is refe renc ed to the vendor’s measure m ent sys t em (correlati on t o cu stom er product( s) is requ ired).
5)A critical component is a component used in a life -support device or system whose fai lure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
6)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sust ain human life. If th ey fail , it is rea so nable to assum e th at the health of the user m ay be endange red.
