Millimeter Wave GaAs Beam Lead Schottky Barrier Diode MA4E2038
M/A-COM Division of AMP Incorporated n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Package Outlines1,2
Millimeter Wave GaAs Beam Lead
Schottky Barrier Diode
MA4E2038
Features
• Low Series Resistance
• Low Capacitance
• High Cut off Frequency
• Silicon Nitride Passivation
• Polyimide Scratch Protection
Description
M/A-COM’s MA4E2038 is a single gallium arsenide beam lead
Schottky barrier diode designed for millimeter wave
applications. These devices are fabricated on OMCVD epitaxial
wafers using a process designed for high device uniformity and
extremely low p arasitics. The high mobility of gallium arsenide
results in lower series resistance than a silicon Schottky with
equivalent capacitance, resulting in lower noise figure and
conversion loss. The diodes are fully passivated with silicon
nitride and have an additional layer of a polymer for scratch
protection. The protective coatings prevent damage to the
junction and the anode airbridge during handling.
Applications
The high cutoff frequency of these diodes allows use through
millimeter wave frequencies. Typical applications include
single and double balanced mixers in PCN transceivers and
radios, automotive radar systems, police radar detectors and
other millimeter wave systems.
MA4E2038
0.135 ± .010
(5.3 ± .4) 0.210 ± .040
(8.3 ± 1.6)
0.009 (0 . 4)
0.013 (0 . 5)
0.630 ± . 010
(24.8 ± .6)
0.060 ( 2. 4 )
0.085 ( 3. 4 )
0.265 ± . 040
(10.4 ± 1.6)
0.180 ± .020
(7.1 ± .8)
Note: (unless ot herwise specif i ed)
1. Dimensions are in mm (mils)
2. Views are with junct i on side up
Absolute Maximum Ratings1
Parameter Maximum Ratings
Operating Temperature -65°C to +125°C
Storage Temperature -65°C to +150°C
Incident LO Power +20 dBm
Incident RF Power +20 dBm
Mounting Temperature +235°C for 10 seconds
1. Exceeding these l i mit s may c ause permanent damage.
Parameters and Test Conditions Symbol Units Min. Typ. Max.
Junction Capacitance at 0V at 1 MHz CJpF — 0.015 —
Total Capacitance at 0V at 1 MHz1CTpF — 0.035 0.045
Series Resistance at +10 mA2RSOhms — 6.5 10.0
Forward Voltage at +1 mA Vf1 Volts 0.60 0.70 0.80
Reverse Breakdown Voltage at -10 uA Vbr Volts — 4.5 —
Electrical Specifications @ TA = +25°C
1. Total capacitance i s equivalent to the sum of junction c apac i tance Cj and paras i tic c apac i tance Cp.
2. Series res i stance i s determ i ned by measuri ng the dynami c resistance and subtracting the junct i on resistance of 2.6 ohms at +10 mA.
Millimeter Wave GaAs Beam Lead Schottky Barrier Diode MA4E2038
M/A-COM Division of AMP Incorporated n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Handling Procedures
The following precautions should be observed to avoid damag-
ing these chip s:
Cleanliness:
These devices should be handled in a clean environment. Do not
attempt to clean die af ter installation.
Static Sensitivity:
Schottky barrier diodes are ESD sensitive and can be damaged
by static electricity. Proper ESD techniques should be used
when han dling these devices.
General Handling:
These devices have a polymer layer which provides scratch
protection for the junction area and the anode air bridge. Beam
lead devices must, however, be handled with care since the leads
may easily be distorted or broken by the normal pressures
exerted when hand led by tweezers. A vacuum pencil with a #27
tip is recommended for picking and placing. A sharpened
wooden stick which has been dipped in isopropyl alcohol may
Mounting Techniques
These devices were designed to be inserted onto hard or soft
substrates. Recommended methods of attachment include ther-
mocompression bonding, parallel-gap welding, solder reflow
and conductive epoxy.
See Application Note M541, “Bonding and Handling Proce-
dures for Chip Dio de Devices” for Detailed Instructio ns.
Typical Performance Curve
0.00
0.01
0.10
1.00
10.00
100.00
0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00
FORWARD VOLTAGE (V)
FORWARD CURRENT (mA)
T = 125oC
T = 25oC
T = -50oC
Typical Forward Characteristics
