Millimeter Wave GaAs Beam Lead Schottky Barrier Diode MA4E2038 MA4E2038 Millimeter Wave GaAs Beam Lead Schottky Barrier Diode 1,2 Package Outlines Features * * * * * Low Series Resistance Low Capacitance High Cut off Frequency Silicon Nitride Passivation Polyimide Scratch Protection MA4E2038 0.135 .010 (5.3 .4) 0.180 .020 (7.1 .8) Description 0.265 .040 (10.4 1.6) 0.630 .010 (24.8 .6) M/A-COM's MA4E2038 is a single gallium arsenide beam lead Schottky barrier diode designed for millimeter wave applications. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The high mobility of gallium arsenide results in lower series resistance than a silicon Schottky with equivalent capacitance, resulting in lower noise figure and conversion loss. The diodes are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coatings prevent damage to the junction and the anode airbridge during handling. 0.210 .040 (8.3 1.6) 0.009 (0.4) 0.013 (0.5) 0.060 (2.4) 0.085 (3.4) Note: (unless otherwise specified) 1. Dimensions are in mm (mils) 2. Views are with junction side up Applications Absolute Maximum Ratings The high cutoff frequency of these diodes allows use through millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, automotive radar systems, police radar detectors and other millimeter wave systems. Parameter Operating Temperature Storage Temperature Incident LO Power Incident RF Power Mounting Temperature 1 Maximum Ratings -65C to +125C -65C to +150C +20 dBm +20 dBm +235C for 10 seconds 1. Exceeding these limits may cause permanent damage. Electrical Specifications @ TA = +25C Parameters and Test Conditions Junction Capacitance at 0V at 1 MHz Total Capacitance at 0V at 1 MHz1 Series Resistance at +10 mA2 Forward Voltage at +1 mA Reverse Breakdown Voltage at -10 uA 1. 2. Symbol CJ CT RS Vf1 Vbr Units pF pF Ohms Volts Volts Min. -- -- -- 0.60 -- Typ. 0.015 0.035 6.5 0.70 4.5 Max. -- 0.045 10.0 0.80 -- Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms at +10 mA. V2.00 M/A-COM Division of AMP Incorporated n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. Millimeter Wave GaAs Beam Lead Schottky Barrier Diode MA4E2038 Handling Procedures Mounting Techniques The following precautions should be observed to avoid damaging these chips: These devices were designed to be inserted onto hard or soft substrates. Recommended methods of attachment include thermocompression bonding, parallel-gap welding, solder reflow and conductive epoxy. Cleanliness: These devices should be handled in a clean environment. Do not attempt to clean die after installation. See Application Note M541, "Bonding and Handling Procedures for Chip Diode Devices" for Detailed Instructions. Static Sensitivity: Schottky barrier diodes are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. General Handling: These devices have a polymer layer which provides scratch protection for the junction area and the anode air bridge. Beam lead devices must, however, be handled with care since the leads may easily be distorted or broken by the normal pressures exerted when handled by tweezers. A vacuum pencil with a #27 tip is recommended for picking and placing. A sharpened wooden stick which has been dipped in isopropyl alcohol may Typical Performance Curve FORWARD CURRENT (mA) Typical Forward Characteristics 100.00 o T = 25 C 10.00 1.00 o T = 125 C 0.10 o T = -50 C 0.01 0.00 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 FORWARD VOLTAGE (V) V2.00 M/A-COM Division of AMP Incorporated n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.