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January 2015
©2011 Fairchild Semiconductor Corporation
FDMS0309AS Rev.C5 www.fairchildsemi.com
1
FDMS0309AS N-Channel PowerTrench® SyncFETTM
FDMS0309AS
N-Channel PowerTrench® SyncFETTM
30 V, 49 A, 3.5 mΩ
Features
Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A
Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
Advanced package and silicon combination for low rDS(on) and
high efficiency
SyncFETTM Schottky Body Diode
MSL1 Robust Package Design
100% UIL tested
RoHS Compliant
General Description
The FDMS0309AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU Low Side Switch
Networking Point of Load Low Side Switch
Telecom Secondary Side Rectification
4
3
2
1
5
6
7
8
Power 56 D
DDDS
S
S
G
D
D
D
D
G
SSS
Pin 1
Bottom
Top
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VDSt Drain to Source Transient Voltage ( tTransient < 100 ns) 33 V
VGS Gate to Source V olt age (Note 4) ±20 V
ID
Drain Current -Continuous (Package limited) TC = 25°C 49
A
-Continuous (Silicon limited) TC = 25°C 96
-Continuous TA = 25°C (Note 1a) 21
-Pulsed 100
EAS Single Pulse Avalanche Energy (Note 3) 66 mJ
PDPower Dissipation TC = 25°C 50 W
Power Dissipation T A = 25°C (Note 1a) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case 2.5 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS0309AS FDMS0309AS Power 56 13 ’’ 12 mm 3000 units
www.fairchildsemi.com
2
©2011 Fairchild Semiconductor Corporation
FDMS0309AS Rev.C5
FDMS0309AS N-Channel PowerTrench® SyncFETTM
Electrical Characteristics TJ = 25 °C unless otherwise noted
Off Characteristic s
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V30 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 10 mA, referenced to 25 °C 25 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V500μA
IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.6 3.0 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 10 mA, referenced to 25 °C -5 mV/°C
rDS(on) Static Drain to Source On Resistance
VGS = 10 V, ID = 21 A 2.73.5
mΩ
VGS = 4.5 V, ID = 19 A3.44.3
VGS = 10 V, ID = 21 A,
TJ = 125 °C 3.7 4.8
gFS Forward Transconductance VDS = 5 V, ID = 21 A 120 S
Ciss Input Capacitance VDS = 15 V, VGS = 0 V,
f = 1 MHz
2255 3000 pF
Coss Output Capacitance 815 1085 pF
Crss Reverse Transfer Capacitance 85 125 pF
RgGate Resistance 1.0 2.5 Ω
td(on) Turn-On Delay Time VDD = 15 V, ID = 21 A,
VGS = 10 V, RGEN = 6 Ω
11 19 ns
trRise Time 4.5 10 ns
td(off) Turn-Off Delay Time 29 46 ns
tfFall Time 3.7 10 ns
QgTotal Gate Charge VGS = 0 V to 10 VVDD = 15 V,
ID = 21 A
34 47 nC
QgTotal Gate Charge VGS = 0 V to 4.5 V1623nC
Qgs Gate to Source Charge 5.9 nC
Qgd Gate to Drain “Miller” Charge 4.6 nC
VSD Source-Drain Diode Forward Voltage VGS = 0 V, IS = 2 A (Note 2) 0.6 0.8 V
VGS = 0 V, IS = 21 A (Note 2) 0.8 1.2
trr Reverse Recovery Time IF = 21 A, di/dt = 300 A/μs 26 42 ns
Qrr Reverse Recovery Charge 27 44 nC
Notes:
1. RθJA is determin ed w ith th e device mo unted on a 1 i n2 pa d 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 materi al. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 66 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 21 A, VDD = 27 V, VGS = 10 V
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
a. 50 °C/W wh en mounted on a
1 in2 pad of 2 oz copper. b. 125 °C/W wh en mounted on a
minimum pad of 2 oz copper.
www.fairchildsemi.com
3
©2011 Fairchild Semiconductor Corporation
FDMS0309AS Rev.C5
FDMS0309AS N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted
Figure 1.
0.0 0.5 1.0 1.5 2.0
0
20
40
60
80
100
VGS = 4 V
VGS = 3 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 6 V
PULSE DU RATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
ID, DRAIN CURRENT (A)
VDS, DRA IN TO SOURCE VOLTAGE (V)
On Region Characteristics Figure 2.
020406080100
0
1
2
3
4
5
VGS = 4 V
VGS = 3 V
VGS = 6 V
VGS = 3.5 V
PULSE D URATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 4.5 V VGS = 10 V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = 21 A
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPER ATUR E (oC)
vs Junction Te mperature Figure 4.
246810
2
4
6
8
10
TJ = 125 oC
ID = 21 A
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
rDS(on), DR AIN TO
SOURCE ON-RESISTANCE (mΩ)
PULSE DU R ATION = 80 μs
DUTY CYCLE = 0.5% MA X
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
20
40
60
80
100
TJ = 125 oC
VDS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% M AX
TJ = -55 oC
TJ = 25 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 125 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current
www.fairchildsemi.com
4
©2011 Fairchild Semiconductor Corporation
FDMS0309AS Rev.C5
FDMS0309AS N-Channel PowerTrench® SyncFETTM
Figure 7.
0 10203040
0
2
4
6
8
10 ID = 21 A
VDD = 20 V
VDD = 10 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 15 V
Gate Charge Characteristics Figure 8.
0.1 1 10
40
100
1000
5000
f = 1 M H z
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
30
Capacitance vs Drain
to Source Voltage
Figure 9.
0.001 0.01 0.1 1 10 100
1
10
40
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALA NCHE (ms)
IAS, AVALANCHE CURRE NT (A)
Unc l amp e d Ind u ctiv e
Switching Capability Figure 10.
25 50 75 100 125 150
0
20
40
60
80
100
VGS = 4.5 V
Limited by Package
RθJC = 2.5 oC/W
VGS = 10 V
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Figure 11. Forward Bias Safe
Operating Area
0.01 0.1 1 10 100200
0.01
0.1
1
10
100
200
1 s
100 μs
10 ms
DC
10 s
100 ms
1 ms
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AR EA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
Figure 12.
10-4 10-3 10-2 10-1 110
100 1000
0.5
1
10
100
1000
2000
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
P(PK), PEAK TRANSIENT POWER (W )
t, PULSE WIDTH (sec)
Single Pulse Maximum
Power Dissipation
Typical Characteristics TJ = 25 °C unless otherwise noted
www.fairchildsemi.com
5
©2011 Fairchild Semiconductor Corporation
FDMS0309AS Rev.C5
FDMS0309AS N-Channel PowerTrench® SyncFETTM
Figure 13.
10-4 10-3 10-2 10-1 110
100 1000
0.001
0.01
0.1
1
SINGLE PULSE
RθJA = 125 oC/W
(Note 1b)
DUTY CYC L E-DESC ENDING O R D ER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1
2
PDM
t1t2
NOTES:
DUTY FAC TOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Junction-to-Ambient Transient Thermal Response Curve
Typical Characteristics TJ = 25 °C unless otherwise noted
www.fairchildsemi.com
6
©2011 Fairchild Semiconductor Corporation
FDMS0309AS Rev.C5
FDMS0309AS N-Channel PowerTrench® SyncFETTM
SyncFETTM Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS0309AS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
0 50 100 150 200
-5
0
5
10
15
20
25
di/dt = 300 A /μs
CURRENT (A)
TIME (ns)
Figure 15. SyncFETTM body diode reverse
leakage versus drain-source voltage
0 5 10 15 20 25 30
10-6
10-5
10-4
10-3
10-2
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
IDSS, REVERSE LEAKAGE CURRENT (A)
VDS, R EVERSE VOLTAGE (V)
Typical Characteristics (continued)
Figure 14. FDMS0309AS SyncFETTM body
diode reverse recover y characteristic
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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