VS-STPS20L15DPbF, VS-STPS20L15D-N3
www.vishay.com Vishay Semiconductors
Revision: 30-Aug-11 1Document Number: 94325
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Schottky Rectifier, 20 A
FEATURES
125 °C TJ operation (VR < 5 V)
Optimized for OR-ing applications
Ultra low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long
term reliability
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to JEDEC-JESD47
Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The Schottky rectifier module has been optimized for ultra
low forward voltage drop specifically for the OR-ing of
parallel power supplies. The proprietary barrier technology
allows for reliable operation up to 125 °C junction
temperature. Typical applications are in parallel switching
power supplies, converters, reverse battery protection, and
redundant power subsystems.
PRODUCT SUMMARY
Package TO-220AC
IF(AV) 20 A
VR15 V
VF at IFSee Electrical table
IRM max. 600 mA at 100 °C
TJ max. 125 °C
Diode variation Single die
EAS 10 mJ
Anode
13
Cathode
Base
cathode
TO-220AC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 20 A
VRRM 15 V
IFSM tp = 5 μs sine 700 A
VF19 Apk, TJ = 125 °C (typical) 0.25 V
TJRange - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-STPS20L15DPbF VS-STPS20L15D-N3 UNITS
Maximum DC reverse voltage VR15 15 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle, TC = 85 °C, rectangular waveform 20 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
VRRM applied
700
A
10 ms sine or 6 ms rect. pulse 330
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 2 A, L = 6 mH 10 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 2A
VS-STPS20L15DPbF, VS-STPS20L15D-N3
www.vishay.com Vishay Semiconductors
Revision: 30-Aug-11 2Document Number: 94325
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Forward voltage drop
See fig. 1 VFM (1)
19 A TJ = 25 °C -0.41
V
40 A - 0.52
19 A TJ = 125 °C 0.25 0.33
40 A 0.37 0.50
Reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
-10
mA
TJ = 100 °C - 600
Threshold voltage VF(TO) TJ = TJ maximum 0.182 V
Forward slope resistance rt7.6 m
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C - 2000 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 8 - nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range TJ- 55 to 125 °C
Maximum storage temperature range TStg - 55 to 150
Maximum thermal resistance,
junction to case RthJC DC operation
See fig. 4 1.5
°C/W
Typical thermal resistance,
case to heatsink RthCS
Mounting surface, smooth and greased
(for TO-220) 0.50
Maximum thermal resistance,
junction to ambient RthJA DC operation
(for D2PAK) 40
Approximate weight 2g
0.07 oz.
Mounting torque minimum Non-lubricated threads 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AC STPS20L15D
VS-STPS20L15DPbF, VS-STPS20L15D-N3
www.vishay.com Vishay Semiconductors
Revision: 30-Aug-11 3Document Number: 94325
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
1.60.4
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
0 0.2 0.6 0.81.0
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
1.2 1.4
1000
0.1
1
10
100
0
VR - Reverse Voltage (V)
IR - Reverse Current (mA)
15
12369
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
1000
1000
010
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
51520
10 000
TJ = 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1 10
0.01
Single pulse
(thermal resistance)
.
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
100
VS-STPS20L15DPbF, VS-STPS20L15D-N3
www.vishay.com Vishay Semiconductors
Revision: 30-Aug-11 4Document Number: 94325
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
70
024
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
75
90
85
100
80
95
161284
See note (1)
Square wave (D = 0.50)
20
14
0
025
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
5 101520
2
10
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
DC
30
4
6
8
12
1000
100 1000
t
p
- Square Wave Pulse Duration (µs)
I
FSM
- Non-Repetitive Surge Current (A)
100
10 00010
At any rated load condition
and with rated V
RRM
applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
VS-STPS20L15DPbF, VS-STPS20L15D-N3
www.vishay.com Vishay Semiconductors
Revision: 30-Aug-11 5Document Number: 94325
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-STPS20L15DPbF 50 1000 Antistatic plastic tube
VS-STPS20L15D-N3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95221
Part marking information TO-220AC PbF www.vishay.com/doc?95224
TO-220AC -N3 www.vishay.com/doc?95068
SPICE model www.vishay.com/doc?95305
- Schottky STPS series
- Current rating (20 = 20 A)
- L = Low voltage drop
- Voltage rating (15 = 15 V)
- D = Essential part number
Device code
62 43 5 7
STPS 20 L 15 D PbFVS-
1
-Vishay Semiconductors product
-
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
Environmental digit
2
3
4
5
6
7
1
Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 07-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TO-220AC
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6
A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208
b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552
b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2
c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084
c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2
D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6 90° to 93° 90° to 93°
E 10.11 10.51 0.398 0.414 3, 6
13
2
D
D1
H1
Q
Detail B
C
A
B
L
e1
Lead tip
L4
L3
E
E2
Ø P
0.015 AB
MM
0.014 AB
MM
Seating
plane
c
A2
A1
A
A
A
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Conforms to JEDEC outline TO-220AC
(6)
(6)
(7)
(6)
(7)
View A - A
θ
E1 (6)
D2 (6)
H1
Thermal pad
E
Detail B
D
L1
D
123
CC
2 x b2 2 x b
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Revision: 08-Feb-17 1Document Number: 91000
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