VS-STPS20L15DPbF, VS-STPS20L15D-N3
www.vishay.com Vishay Semiconductors
Revision: 30-Aug-11 1Document Number: 94325
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Schottky Rectifier, 20 A
FEATURES
• 125 °C TJ operation (VR < 5 V)
• Optimized for OR-ing applications
• Ultra low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The Schottky rectifier module has been optimized for ultra
low forward voltage drop specifically for the OR-ing of
parallel power supplies. The proprietary barrier technology
allows for reliable operation up to 125 °C junction
temperature. Typical applications are in parallel switching
power supplies, converters, reverse battery protection, and
redundant power subsystems.
PRODUCT SUMMARY
Package TO-220AC
IF(AV) 20 A
VR15 V
VF at IFSee Electrical table
IRM max. 600 mA at 100 °C
TJ max. 125 °C
Diode variation Single die
EAS 10 mJ
Anode
13
Cathode
Base
cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 20 A
VRRM 15 V
IFSM tp = 5 μs sine 700 A
VF19 Apk, TJ = 125 °C (typical) 0.25 V
TJRange - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-STPS20L15DPbF VS-STPS20L15D-N3 UNITS
Maximum DC reverse voltage VR15 15 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle, TC = 85 °C, rectangular waveform 20 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
VRRM applied
700
A
10 ms sine or 6 ms rect. pulse 330
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 2 A, L = 6 mH 10 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 2A