BAV99
BAV99, Rev. B
Small Signal Diode
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Parameter
Value
Units
VRRM Maximum Repetitive Reverse Voltage 70 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-repetitive Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 micros econd
1.0
2.0
A
A
Tstg Storage Temperature Range -55 to +150 °C
TJ Operating Junction Temperature 150 °C
BAV99
SOT-23
3
1
2
2001 Fairchild Semiconductor Corporation
Symbol
Parameter
Test Conditions
Min
Max
Units
VR Breakdown Voltage
IR = 100 µA 70 V
VF Forward Voltage
IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
715
855
1.0
1.25
mV
mV
V
V
IR Reverse Current VR = 70 V
VR = 25 V, TA = 150°C
VR = 70 V, TA = 150°C
2.5
30
50
µA
µA
µA
CT Total Capacitance VR = 0, f = 1.0 MHz 1.5 pF
trr Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100Ω 6.0 ns
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD Power Dissipation 350 mW
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
12
3
A7
12
3
Connection Diagram
BAV99
BAV99, Rev. B
Typical Characteristics
Small Signal Diode
(continued)
110
120
130
140
150
1 2 3 5 10 20 30 5 0 10 0
Ta= 25 C
Reverse Voltage, V
R [V]
Reverse Current, IR [uA] 0
50
100
150
200
250
300
10 20 30 50 70 100
Ta= 25 C
Reverse Current, I
R [nA ]
Reverse Volta
g
e, V
R
[
V
]
250
300
350
400
450
1 2 3 5 10 20 3 0 50 100
Ta= 25 C
Forward V oltage, V
F [mV ]
Forward C u rrent
,
I
F
[
uA
]
450
500
550
600
650
700
0. 1 0.2 0.3 0.5 1 2 3 5 10
Ta= 25 C
Forward Voltage, V
F
[m V ]
Fo rward Current
,
I
F
mA
0.6
0.8
1.0
1.2
1.4
10 2 0 30 5 0 100 2 00 3 00 500
Ta= 25 C
Forward Voltage, V
F
[V]
Fo rward Current, I
F
[mA ] 02468101214
1.0
1.1
1.2
1.3
Ta= 25 C
Total Capacitance [pF]
Reverse Voltage [V]
Figure 1. Reverse V oltage vs Reverse Current
BV - 1.0 to 100uA Figure 2. Reverse Current vs Reverse V oltage
IR - 10 to 100 V
Figure 3. Forward V oltage vs Forward Current
VF - 1.0 to 100 uA Figure 4. Forward V oltage vs Forward Current
VF - 0.1 to 10 mA
Figure 5. Forward V oltage vs Forward Current
VF - 10 - 800 mA Figure 6. T otal Capacitance vs Reverse V oltage
°°
°
°
°°
BAV99
BAV99, Rev. B
T ypical Characteristics (continued)
Small Signal Diode
(continued)
10 20 30 40 50 60
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Ta= 25 C
Reverse Recovery Time [nS]
Reverse Current [mA]
0 50 100 150
0
100
200
300
400
I
F(AV)
- AVERAGE RECTIFIED CURRENT - mA
C u rren t [mA]
Am b ient Te mperature, TA [ oC]
0 50 100 150 200
0
100
200
300
400
500
DO -35 Pkg
SO T-23 Pkg
Power Dissipation, P
D
[mW]
Average Temperature, IO [ oC]
Figure 7. Reverse Recovery Time
vs Reverse Current
TRR - IR 10 mA vs 60 mA
Figure 8. Average Rectified Current (IF(AV))
versus Ambient T emperature (T A)
Figure 9. Power Derating Curve
°
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Advance Information
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This datasheet contains the design specifications for
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supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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