MMBTA92 - Fairchild Semiconductor

MMBTA92 / PZTA92 — PNP High-Voltage Amplifier

MMBTA92 / PZTA92 Rev. 1.1.0 1

March 2014

MMBTA92 / PZTA92

PNP High-Voltage Amplifier

Ordering Information

Absolute Maximum Ratings(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty-cycle operations.

Figure 1. MMBTA92 Device Package Figure 2. PZTA92 Device Package

Part Number Top Mark Package Packing Method

MMBTA92 2D SOT-23 3L Tape and Reel

PZTA92 A92 SOT-223 4L Tape and Reel

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage -300 V

VCBO Collector-Base Voltage -300 V

VEBO Emitter-Base Voltage -5 V

ICCollector Current - Continuous -500 mA

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

SOT-23

Mark: 2D

SOT-223

Description

This device is designed for high-voltage driver applica-

tions. Sourced from process 76.

MMBTA92 / PZTA92 — PNP High-Voltage Amplifier

MMBTA92 / PZTA92 Rev. 1.1.0 2

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Notes:

3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.

4. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.

Symbol Parameter Max. Unit

MMBTA92(3) PZTA92(4)

Total Device Dissipation 350 1000 mW

Derate Above 25°C2.88.0mW/°C

RθJA Thermal Resistance, Junction to Ambient 357 125 °C/W

Symbol Parameter Conditions Min. Max. Unit

V(BR)CEO

Collector-Emitter Breakdown

Voltage(5) IC = -1.0 mA, IB = 0 -300 V

V(BR)CBO Collector-Base Breakdown Voltage IC = -100 μA, IE = 0 -300 V

V(BR)EBO Emitter-Base Breakdown Voltage IE = -100 μA, IC = 0 -5.0 V

ICBO Collector Cut-Off Current VCB = -200 V, IE = 0 -0.25 μA

IEBO Emitter Cut-Off Current VEB = -3.0 V, IC = 0 -0.1 μA

hFE DC Current Gain(5)

IC = -1.0 mA, VCE = -10 V 25

IC = -10 mA, VCE = -10 V 40 250

IC = -30 mA, VCE = -10 V 25

VCE(sat) Collector-Emitter Saturation

Voltage(5) IC = -20 mA, IB = -2.0 mA -0.5 V

VBE(sat) Base-Emitter Saturation Voltage(5) IC = -20 mA, IB = -2.0 mA -0.9 V

fTCurrent Gain - Bandwidth Product IC = -10 mA, VCE = -20 V,

f = 100 MHz 50 MHz

Ccb Collector-Base Capacitance VCB = -20 V, IE = 0,

f = 1.0 MHz 6.0 pF

MMBTA92 / PZTA92 — PNP High-Voltage Amplifier

MMBTA92 / PZTA92 Rev. 1.1.0 3

Typical Performance Characteristics

Figure 3. Typical Pulsed Curre nt Gain vs.

Collector Current Figure 4. Colle ctor-Emitter Saturation Voltage vs.

Collector Current

Figure 5. Base-Em itter Saturation Voltage

vs. Collector Current Figure 6. Base-Emitter On Voltage vs.

Collector Current

Figure 7. Collect or Cut-Off Current vs.

Ambient Temperature Figure 8. Junction Capacitance vs.

Reverse-Bias Voltage

0.1 1 10 1 00

100

120

140

I - COLLECTOR CURRENT (mA)

h - DC CURRENT GAIN

V = 5V

125 °C

- 40 °C

25 °C

0.1 1 10 100

0.2

0.4

0.6

I - COLLECTOR CURRENT (mA)

V - COLLE CTOR-EM ITTER VOLTAGE (V)

CESAT

β= 1 0

125 °C

- 40 °C

25 °C

110100

0.3

0.4

0.5

0.6

0.7

0.8

0.9

I - COLLECTOR CURRENT (mA)

V - BASE -EM ITTER VOLTAG E (V)

BESAT

β= 10

125 °C

- 40 °C

25 °C

110100

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - BASE-E MITTER ON VOLTAGE (V)

BE(O N)

125 °C

- 4 0 °C

25 °C

V = 5V

25 50 75 100 125 150

0.1

10 0

T - AMBIENT TEMPERATURE ( C)

I - COLLECTOR CURRENT (nA)

V = 1 50V

CBO

0.1 1 10 100

0.1

V - REVERSE VOLTAGE (V)

JUNCTION CAPACITANCE (pF)

f = 1.0 MHz

Cob

MMBTA92 / PZTA92 — PNP High-Voltage Amplifier

MMBTA92 / PZTA92 Rev. 1.1.0 4

Typical Performance Characteristics (Continued)

Figure 9. Gain Ba ndwidth Product vs.

Collector Current Figure 10. Power Dissipation vs.

Ambient Temperature

1 10 20 50 100

100

I - COLLECTOR CURRENT (mA)

f - GAIN BANDWIDTH PRODUCT (MHz)

V = 50V

V = 15V

0 25 50 75 100 125 150

0.25

0.5

0.75

TEMPERATURE ( C)

P - POWER DISSIPATION (W)

SOT-223

TO-92

SOT-23

MMBTA92 / PZTA92 — PNP High-Voltage Amplifier

MMBTA92 / PZTA92 Rev. 1.1.0 5

Physical Dimensions

Figure 11. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the

warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.

LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE INCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR EXTRUSIONS.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M - 1994.

E) DRAWING FILE NAME: MA03DREV10

SEE DETAIL A

SEATING

PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

SOT-23

MMBTA92 / PZTA92 — PNP High-Voltage Amplifier

MMBTA92 / PZTA92 Rev. 1.1.0 6

Physical Dimensions (Continued)

Figure 12. MOLDED PACKAGING, SOT-223, 4-LEAD (ACTIVE)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the

warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/MA/MA04A.pdf.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf.

SOT-223

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intended to be an exhaustive list of all such trademarks.

AccuPower¥

X-CAP®*

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DEUXPEED

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FACT

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¥ e-Series¥

max¥

GTO

IntelliMAX

ISOPLANAR

Making Small Speakers Sound Louder

and Better™

MegaBuck

MICROCOUPLER

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MicroPak

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OptoHiT

OPTOLOGIC

OPTOPLANAR

PowerTrench

PowerXS™

Programmable Active Droop

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Quiet Series

RapidConfigure

Saving our world, 1mW

/W/kW

at a time™

SignalWise

SmartMax

SMART START

Solutions for Your Success

SPM

STEALTH

SuperFET

SuperSOT

¥-3

SuperSOT

¥-6

SuperSOT

¥-8

SupreMOS

SyncFET

Sync-Lock™

®*

TinyBoost

TinyBuck

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TinyLogic

TINYOPTO

TinyPower

TinyPWM

TinyWire

ranSiC¥

TriFault Detect

RUECURRENT®*

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UHC

Ultra FRFET

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VCX

VisualMax

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XS™

௝❺™

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WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain

life, and (c) whose failure to perform when properly used in

accordance with instructions for use provided in the labeling, can be

reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to

cause the failure of the life support device or system, or to affect its

safety or effectiveness.

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance

Information

Formative

In Design

Datasheet contains the design specifications for product development. Specifications may change

in any manner without notice.

Preliminary First Production

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed

Full Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make

changes at any time without notice to improve the design.

Obsolete

Not In Production

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only.

Rev. I68

Mouser Electronics

Authorized Distributor

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MMBTA92