PD - 97308B IRFB3607PbF IRFS3607PbF IRFSL3607PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET(R) Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability S VDSS RDS(on) typ. max. ID D 75V 7.34m 9.0m 80A : : D D G D S S G G D2Pak IRFS3607PbF TO-220AB IRFB3607PbF D S TO-262 IRFSL3607PbF G D S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 100C Continuous Drain Current, VGS @ 10V IDM c 56c Pulsed Drain Current 310 PD @TC = 25C Maximum Power Dissipation 140 W W/C V ID @ TC = 25C 80 Continuous Drain Current, VGS @ 10V d Linear Derating Factor 0.96 VGS Gate-to-Source Voltage 20 dv/dt TJ Peak Diode Recovery TSTG Storage Temperature Range f 27 V/ns C -55 to + 175 Operating Junction and 300 Soldering Temperature, for 10 seconds (1.6mm from case) x Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy x 10lb in (1.1N m) Mounting torque, 6-32 or M3 screw c A e g 120 mJ 46 A 14 mJ Thermal Resistance Symbol Parameter k RJC Junction-to-Case RCS Case-to-Sink, Flat Greased Surface, TO-220 RJA RJA Junction-to-Ambient, TO-220 j 2 Junction-to-Ambient (PCB Mount) , D Pak jk www.irf.com Typ. Max. --- 1.045 0.50 --- --- --- 62 40 Units C/W 1 http://store.iiic.cc/ 04/30/2010 IRFB/S/SL3607PbF Static @ TJ = 25C (unless otherwise specified) Symbol Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 75 --- --- 2.0 --- --- --- --- --- --- 0.096 --- 7.34 9.0 --- 4.0 --- 20 --- 250 --- 100 --- -100 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 5mA m VGS = 10V, ID = 46A V VDS = VGS, ID = 100A A VDS = 75V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V d g Dynamic @ TJ = 25C (unless otherwise specified) Symbol Parameter gfs Qg Qgs Qgd Qsync Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) RG(int) td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) h j 115 --- --- --- --- --- 56 13 16 40 --- 84 --- --- --- --- 0.55 16 110 43 96 3070 280 130 380 610 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- S nC Conditions VDS = 50V, ID = 46A ID = 46A VDS = 38V VGS = 10V ID = 46A, VDS =0V, VGS = 10V g ns pF VDD = 49V ID = 46A RG = 6.8 VGS = 10V VGS = 0V VDS = 50V = 1.0MHz VGS = 0V, VDS = 0V to 60V VGS = 0V, VDS = 0V to 60V g j h Diode Characteristics Symbol IS Parameter Min. Typ. Max. Units Continuous Source Current VSD trr (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time ISM --- --- d --- --- 80 c 310 A Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. TJ = 25C, IS = 46A, VGS = 0V TJ = 25C VR = 64V, IF = 46A TJ = 125C di/dt = 100A/s TJ = 25C S g --- --- 1.3 V --- 33 50 ns --- 39 59 --- 32 48 nC TJ = 125C --- 47 71 --- 1.9 --- A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Calculated continuous current based on maximum allowable junction temperature. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.12mH RG = 25, IAS = 46A, VGS =10V. Part not recommended for use above this value. g ISD 46A, di/dt 1920A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom- mended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90C. 2 www.irf.com http://store.iiic.cc/ IRFB/S/SL3607PbF 1000 1000 100 BOTTOM VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V BOTTOM 100 4.5V 10 4.5V 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 10 1 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 100 Fig 2. Typical Output Characteristics 1000 3.0 100 T J = 175C 10 T J = 25C 1 VDS = 25V 60s PULSE WIDTH 0.1 2 3 4 5 6 7 ID = 80A 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 12.0 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd VGS , Gate-to-Source Voltage (V) ID= 46A Coss = Cds + Cgd 10000 Ciss Coss 1000 2.0 8 VGS , Gate-to-Source Voltage (V) 100000 VGS = 10V 2.5 (Normalized) RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (A) 10 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) C, Capacitance (pF) 1 Crss 10.0 VDS= 24V VDS= 15V 8.0 6.0 4.0 2.0 0.0 100 1 10 0 100 10 20 30 40 50 60 Q G , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage www.irf.com 3 http://store.iiic.cc/ IRFB/S/SL3607PbF 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 T J = 175C 10 T J = 25C 1 100sec 100 1msec 10msec 10 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.0 0.5 1.0 1.5 1 2.0 V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 80 70 ID, Drain Current (A) 60 50 40 30 20 10 0 50 75 100 125 150 175 100 Id = 5mA 95 90 85 80 75 70 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( C ) T C , Case Temperature (C) Fig 10. Drain-to-Source Breakdown Voltage Fig 9. Maximum Drain Current vs. Case Temperature 1.20 EAS , Single Pulse Avalanche Energy (mJ) 500 1.00 0.80 Energy (J) 100 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 25 10 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) 0.60 0.40 0.20 0.00 ID 5.6A 11A BOTTOM 46A 450 TOP 400 350 300 250 200 150 100 50 0 -10 0 10 20 30 40 50 60 70 80 25 Fig 11. Typical COSS Stored Energy 50 75 100 125 150 175 Starting T J , Junction Temperature (C) VDS, Drain-to-Source Voltage (V) 4 DC 1 0.1 Fig 12. Maximum Avalanche Energy vs. DrainCurrent www.irf.com http://store.iiic.cc/ IRFB/S/SL3607PbF Thermal Response ( Z thJC ) C/W 10.00 1.00 D = 0.50 0.20 0.10 0.05 0.10 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 R3 R3 C 2 1 2 3 3 Ci= i/Ri Ci i/Ri 1E-005 4 0.01109 0.000003 0.26925 0.000130 0.49731 0.001301 0.26766 0.008693 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.00 1E-006 4 i (sec) Ri (C/W) R4 R4 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) 100 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 150 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 46A 125 100 75 50 25 0 25 50 75 100 125 150 PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 175 Starting T J , Junction Temperature (C) Fig 15. Maximum Avalanche Energy vs. Temperature www.irf.com 5 http://store.iiic.cc/ IRFB/S/SL3607PbF 20 IF = 31A V R = 64V 4.0 TJ = 25C TJ = 125C 15 3.5 3.0 2.5 ID = 100A ID = 250A 2.0 ID = 1.0mA ID = 1.0A 1.5 IRR (A) VGS(th) , Gate Threshold Voltage (V) 4.5 10 5 1.0 0 -75 -50 -25 0 25 50 75 100 125 150 175 200 0 200 T J , Temperature ( C ) 600 800 1000 Fig. 17 - Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage vs. Temperature 560 20 IF = 46A V R = 64V IF = 31A V R = 64V 480 TJ = 25C TJ = 125C TJ = 25C TJ = 125C 400 Q RR (A) 15 IRR (A) 400 diF /dt (A/s) 10 320 240 160 5 80 0 0 0 200 400 600 800 0 1000 200 400 600 800 1000 diF /dt (A/s) diF /dt (A/s) Fig. 19 - Typical Stored Charge vs. dif/dt Fig. 18 - Typical Recovery Current vs. dif/dt 560 IF = 46A V R = 64V 480 TJ = 25C TJ = 125C Q RR (A) 400 320 240 160 80 0 0 200 400 600 800 1000 diF /dt (A/s) 6 Fig. 20 - Typical Stored Charge vs. dif/dt http://store.iiic.cc/ www.irf.com IRFB/S/SL3607PbF D.U.T Driver Gate Drive - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D= Period P.W. + VDD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V D.U.T RG VGS 20V DRIVER L VDS tp + V - DD IAS tp A 0.01 I AS Fig 21a. Unclamped Inductive Test Circuit LD Fig 21b. Unclamped Inductive Waveforms VDS VDS 90% + VDD - 10% D.U.T VGS VGS Pulse Width < 1s Duty Factor < 0.1% td(on) Fig 22a. Switching Time Test Circuit tr td(off) tf Fig 22b. Switching Time Waveforms Id Vds Vgs L DUT 0 VCC Vgs(th) 1K Qgs1 Qgs2 Fig 23a. Gate Charge Test Circuit Qgd Qgodr Fig 23b. Gate Charge Waveform www.irf.com http://store.iiic.cc/ 7 IRFB/S/SL3607PbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information (;$03/( 7+,6,6$1,5) /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(& Note: "P" in assembly line position indicates "Lead-Free" ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( <($5 :((. /,1(& TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com http://store.iiic.cc/ IRFB/S/SL3607PbF D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information 7+,6,6$1,5)6:,7+ /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(/ ,17(51$7,21$/ 5(&7,),(5 /2*2 3$57180%(5 )6 '$7(&2'( <($5 :((. /,1(/ $66(0%/< /27&2'( 25 ,17(51$7,21$/ 5(&7,),(5 /2*2 3$57180%(5 )6 $66(0%/< /27&2'( '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7 237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 http://store.iiic.cc/ IRFB/S/SL3607PbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information (;$03/( 7+,6,6$1,5// /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(& 3$57180%(5 ,17(51$7,21$/ 5(&7,),(5 /2*2 '$7(&2'( <($5 :((. /,1(& $66(0%/< /27&2'( 25 ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7 237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com http://store.iiic.cc/ IRFB/S/SL3607PbF D2Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/10 www.irf.com 11 http://store.iiic.cc/