Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 10
1Publication Order Number:
MJD340/D
MJD340,
NJVMJD340T4G(NPN),
MJD350,
NJVMJD350T4G(PNP)
High Voltage Power
Transistors
DPAK For Surface Mount Applications
Designed for line operated audio output amplifier, switchmode
power supply drivers and other switching applications.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Electrically Similar to Popular MJE340 and MJE350
300 V (Min) − VCEO(sus)
0.5 A Rated Collector Current
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Packages*
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage VCEO 300 Vdc
Collector−Base Voltage VCB 300 Vdc
Emitter−Base Voltage VEB 3 Vdc
Collector Current
Continuous
Peak
IC0.5
0.75
Adc
Total Power Dissipation
@ TC = 25C
Derate above 25C
PD15
0.12
W
W/C
Total Power Dissipation (Note 1)
@ TA = 25C
Derate above 25C
PD1.56
0.012
W
W/C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to + 150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SILICON
POWER TRANSISTORS
0.5 AMPERE
300 VOLTS, 15 WATTS
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
J3x0 = Device Code
x= 4 or 5
G=Pb−Free Package
AYWW
J3x0G
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP)
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 8.33 C/W
Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 80 C/W
Leading Temperature for Soldering Purpose TL260 C
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 1 mA, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VCEO(sus)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
300
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 300 V, IE = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ICEO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
0.1
ÎÎÎ
ÎÎÎ
ÎÎÎ
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 3 V, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
IEBO
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
0.1
ÎÎÎ
ÎÎÎ
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 50 mA, VCE = 10 V)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
hFE
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
30
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
240
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage
(IC = 100 mA, IB = 10 mA)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VCE(sat)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1
ÎÎÎ
ÎÎÎ
ÎÎÎ
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage
(IC = 1 A, VCE = 10 V)
ÎÎÎÎ
ÎÎÎÎ
VBE(on)
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
1.5
ÎÎÎ
ÎÎÎ
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current Gain — Bandwidth Product
(IC = 50 mA, VCE = 10 V, f = 10 MHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
fT
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
10
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
300
10 1
100
50
3 20 30 50 70 100 200 300 500
200
70
30
20
25107
hFE, DC CURRENT GAIN
TJ = 150C
+25C
VCE = 2 V
VCE = 10 V
-55C
+100C
TYPICAL CHARACTERISTICS
MJD340
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP)
http://onsemi.com
3
V, VOLTAGE (VOLTS)
1
10
Figure 2. “On” Voltages
IC, COLLECTOR CURRENT (mA)
020 30 50 100 200 500
0.4
0.8
0.6
0.2
300
TJ = 25C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 10 V
IC/IB = 5
MJD340
1
5
07 10 20 30 100 200
0.8
0.6
50 70 300 500
0.4
0.2
1
200
5
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
10
7 10 20 30 100 200
Figure 4. “On” Voltages
IC, COLLECTOR CURRENT (mA)
100
70
V, VOLTAGE (VOLTS)
20
50 70
TJ = 25C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 10 V
TJ = 150C
25C
VCE = 2 V
VCC = 10 V
-55C
300 500
hFE, DC CURRENT GAIN
50
30 IC/IB = 10
IC/IB = 5
VCE(sat)
MJD350 MJD350
t, TIME (ms)
1
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t), TRANSIENT THERMAL
0.05 1 2 5 10 20 50 100 200 1 k500
RqJC(t) = r(t) RqJC
RqJC = 8.33C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02 0.1 0.50.2
Figure 5. Thermal Response
RESISTANCE (NORMALIZED)
0.03 0.3 3 30 300
0.01
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP)
http://onsemi.com
4
IC, COLLECTOR CURRENT (mA)
1000
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
120 30 50 70 100
200
500
300 500 ms
Figure 6. Active Region Safe Operating Area
200 300 500 700 100
0
100
20
50
30
10
2
5
3
1 ms
dc
100 msThere are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v150_C. TJ(pk) may be calculated from the data in
Figure 5. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 7. Power Derating
25
25
T, TEMPERATURE (C)
050 75 100 125 150
20
15
10
5
PD, POWER DISSIPATION (WATTS)
2.5
0
2
1.5
1
0.5
TATC
TC
TA
ORDERING INFORMATION
Device Package Shipping†
MJD340G DPAK
(Pb−Free) 75 Units / Rail
MJD340RLG DPAK
(Pb−Free) 1,800 / Tape & Reel
MJD340T4G DPAK
(Pb−Free) 2,500 / Tape & Reel
NJVMJD340T4G DPAK
(Pb−Free) 2,500 / Tape & Reel
MJD350G DPAK
(Pb−Free) 75 Units / Rail
MJD350T4G DPAK
(Pb−Free) 2,500 / Tape & Reel
NJVMJD350T4G DPAK
(Pb−Free) 2,500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP)
http://onsemi.com
5
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE D
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
b
D
E
b3
L3
L4
b2
eM
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
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Phone: 81−3−5817−1050
MJD340/D
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