HMIC™ Silicon SP6T PIN Diode Switch
with Integrated Bias Network
Rev. V5
MA4SW610B-1
1
1
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For further information and support please visit:
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DC-0007084
1
Features
Broad Bandwidth Specified up to 18 GHz
Integrated Bias Network
Low Insertion Loss / High Isolation
Rugged, Glass Encapsulated Construction
Fully Monolithic
RoHS* Compliant
Description
The MA4SW610B-1 device is a SP6T broadband
switch with integrated bias network utilizing
MACOM's HMICTM (Heterolithic Microwave
Integrated Circuit) process, US Patent 5,268,310.
This process allows the incorporation of silicon
pedestals that form series and shunt diodes or vias
by imbedding them in low loss, low dispersion
glass. By using small spacing between elements,
this combination of silicon and glass gives HMIC
devices low loss and high isolation performance with
exceptional repeatability through low millimeter
frequencies. Large bond pads facilitate the use of
low inductance ribbon bonds, while gold backside
metallization allows for manual or automatic chip
bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag
solders or electrically conductive silver epoxy.
These high performance switches are suitable for
use in multi-band ECM, Radar, and instrumentation
control circuits where high isolation to insertion loss
ratios are required. With a standard +5 V / -5 V, TTL
controlled PIN diode driver, 80 ns switching speeds
can be achieved.
Yellow areas denote wire bond pads
*Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
Ordering Information
Part Number Package
MA4SW610B-1 Waffle Pack
J2J7
Common Port
J1
DC Bias
J5 J3J4
J6
Functional Diagrams
HMIC™ Silicon SP6T PIN Diode Switch
with Integrated Bias Network
Rev. V5
MA4SW610B-1
2
2
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0007084
2
Electrical Specifications: TA = +25°C, 10 mA (On-Wafer Measurements)
Parameter Test Conditions Units Min. Typ. Max.
Insertion Loss
6 GHz
12 GHz
18 GHz
dB —
1.0
1.3
1.9
1.4
2.0
2.9
Isolation
6 GHz
12 GHz
18 GHz
dB
43
35
30
49
43
39
—
Input Return Loss
6 GHz
12 GHz
18 GHz
dB —
18
20
16
—
Isolation
6 GHz
12 GHz
18 GHz
dB —
19
22
20
—
Switching Speed1 10 GHz ns — 80 —
Absolute Maximum Ratings2,3,4
Parameter Absolute Maximum
RF CW Incident Power +33 dBm
Reverse Voltage -50 V
Bias Current per Port ±50 mA @ +25°C
Junction Temperature +175°C
Operating Temperature -65°C to +125°C
Storage Temperature -65°C to +150°C
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. MACOM does not recommend sustained operation near these
survivability limits.
4. Maximum operating conditions for a combination of RF power,
DC bias and temperature: +33 dBm CW @ 15 mA (per diode)
@ +85°C.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 0
(HBM) and Class C1 (CDM) devices.
1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the
modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an
RC network using the following values: R = 50 - 200 Ω, C = 390 - 1000 pF. Driver spike current, IC = C dv/dt, ratio of spike current to steady
state current, is typically 10:1.
HMIC™ Silicon SP6T PIN Diode Switch
with Integrated Bias Network
Rev. V5
MA4SW610B-1
3
3
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0007084
3
Typical Performance Curves:
Isolation vs. Frequency Insertion Loss vs. Frequency
Input Return Loss vs. Frequency (Transmission) Output Return Loss vs. Frequency (Termination)
-5
-4
-3
-2
-1
0
2 4 6 8 10 12 14 16 18
J2
J3
J4
J5
J6
J7
S21 (dB)
Frequency (GHz)
-70
-60
-50
-40
-30
-20
2 4 6 8 10 12 14 16 18
J2
J3
J4
J5
J6
J7
S21 (dB)
Frequency (GHz)
-30
-25
-20
-15
-10
-5
0
2 4 6 8 10 12 14 16 18
J2
J3
J4
J5
J6
J7
S11 (dB)
Frequency (GHz)
-30
-25
-20
-15
-10
-5
0
2 4 6 8 10 12 14 16 18
J2
J3
J4
J5
J6
J7
S22 (dB)
Frequency (GHz)
HMIC™ Silicon SP6T PIN Diode Switch
with Integrated Bias Network
Rev. V5
MA4SW610B-1
4
4
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0007084
4
Typical Bias Network
Operation of the MA4SW610B-1 PIN Switch
The simultaneous application of negative DC current to the low loss port and positive DC current to the remaining
isolated ports as shown in the schematic provides successful RF operation of the MA4SW Series of PIN Diode
Switches. The backside area of the die is the RF and DC return ground plane. The DC bias return is located on
common port J1. Constant current sources should supply the DC control currents.
In the low loss state, the series diode must be forward biased and the shunt diode reverse biased. For all isolated
ports, the shunt diode is forward biased while the series diode is reverse biased.
This design improves insertion loss, P1dB, IP3, and switching speed by incorporating a voltage pull-up resistor
(~100 Ω) in the DC return path (J1) under insertion loss bias. A typical value of |-3 V| is achieved at the insertion
loss bias node using ±20 mA, with a Standard, ±5 V TTL controlled PIN diode driver.
Typical Driver Connections
DC Control Current (mA) RF Output States
B3 B4 B5 J1-J2 J1-J3 J1-J4 B2 J1-J5 B6 J1-J6 B7 J1-J7
+10 +10 +10 low loss Isolation Isolation -10 Isolation +10 Isolation +10 Isolation
-10 +10 +10 Isolation low loss Isolation +10 Isolation +10 Isolation +10 Isolation
+10 -10 +10 Isolation Isolation low loss +10 Isolation +10 Isolation +10 Isolation
+10 +10 +10 -10 Isolation Isolation Isolation low loss +10 Isolation +10 Isolation
+10 +10 +10 +10 Isolation Isolation Isolation Isolation -10 low loss +10 Isolation
+10 +10 +10 +10 +10 Isolation Isolation Isolation Isolation Isolation -10 low loss
J1
J2
J3
J5
J7
DC Bias
J4
Input Common Port
J6
HMIC™ Silicon SP6T PIN Diode Switch
with Integrated Bias Network
Rev. V5
MA4SW610B-1
5
5
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0007084
5
Chip Dimensions5,6
5. Topside and backside metallization is gold , 2.5 µm thick typical.
6. Yellow areas indicate wire bonding pads.
DIM
INCHES MILLIMETERS
MIN MAX MIN MAX
A 0.1325 0.1335 3.3655 3.3909
B 0.1225 0.1235 3.1115 3.1369
C 0.0595 0.0605 1.5113 1.5367
D 0.0345 0.0355 0.8763 0.9017
E 0.0245 0.0255 0.6223 0.6477
F 0.0115 0.0125 0.2921 0.3175
G 0.0305 0.0315 0.7747 0.8001
H 0.0275 0.0285 0.6985 0.7239
I 0.0395 0.0405 1.0033 1.0287
J 0.0295 0.0305 0.7493 0.7747
RF Bond Pads (J1-J7) 0.016 X 0.005 REF. 0.4064 X 0.127 REF.
DC Bond Pads (B2-B5) 0.005 X 0.005 REF. 0.127 X 0.127 REF.
Thickness 0.005 REF. 0.127 REF.
HMIC™ Silicon SP6T PIN Diode Switch
with Integrated Bias Network
Rev. V5
MA4SW610B-1
6
6
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0007084
6
Cleanliness
The chips should be handled in a clean environment
free of dust and organic contamination.
Wire / Ribbon Bonding
Thermo compression wedge bonding using 0.003” x
0.00025” ribbon or 0.001” diameter gold wire is
recommended. A work stage temperature of
150°C - 200°C, tool tip temperature of 120°C - 150°
and a downward force of 18 to 22 grams should be
used. If ultrasonic energy is necessary, it should be
adjusted to the minimum level required to achieve a
good bond. Excessive power or force will fracture
the silicon beneath the bond pad causing it to lift.
RF bond wires and ribbons should be kept as short
as possible for optimum RF performance.
Chip Mounting
HMIC switches have Ti-Pt-Au backside metallization
and can be mounted using a gold-tin eutectic solder
or conductive epoxy. Mounting surface must be free
of contamination and flat.
Eutectic Die Attachment
An 80/20, gold-tin, eutectic solder is recommended.
Adjust the work surface temperature to 255oC and
the tool tip temperature to 265oC. After placing the
chip onto the circuit board re-flow the solder by
applying hot forming gas (95/5 Ni/H) to the top
surface of the chip. Temperature should be
approximately 290oC and not exceed 320oC for
more than 20 seconds. Typically no more than three
seconds is necessary for attachment. Solders rich in
tin should be avoided
Epoxy Die Attachment
A minimum amount of epoxy, 1 - 2 mils thick, should
be used to attach chip. A thin epoxy fillet should be
visible around the outer perimeter of the chip after
placement. Epoxy cure time is typically 1 hour at
150°C.
HMIC™ Silicon SP6T PIN Diode Switch
with Integrated Bias Network
Rev. V5
MA4SW610B-1
7
7
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0007084
7
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