MBR3030PTL thru 3060PTL
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-3P molded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
MBR
3030PTL
30
21
30
Maximum Average Forward
Rectified Current (See Fig.1)
@T
C
=
110 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward
Voltage (Note 1)
30
200
-
0.57
0.80
0.72
T
J
Operating Temperature Range
-55 to +150
C
T
STG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 2)
5
C/W
T
J
=25 C
C
J
Typical Junction Capacitance per
element (Note 3)
600
pF
I
R
@T
J
=125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C
mA
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
Voltage Rate of Change (Rated VR)
T
J
=125 C
R
0JC
dv/dt 10000
V/us
I
F
=15A @
I
F
=15A @
I
F
=30A @
I
F
=30A @
MBR
3035PTL
35
24.5
35
MBR
3040PTL
40
28
40
MBR
3045PTL
45
31.5
45
MBR
3050PTL
50
35
50
MBR
3060PTL
60
42
60
V
0.85
0.75
1.05
0.90
T
J
=125 C
1
60
5
100
TO-3P
PIN 1
PIN 3
PIN 2
CASE
E
L
Q
P
N
M
F
C
B
A
O
K
J
I
H
G
D
L
PIN
123
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
- 30
to
60
Volts
FORWARD CURRENT
- 30
Amperes
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
T
J
=25 C
All Dimensions in millimeter
DIM.
A
C
D
E
F
G
B
M
L
K
J
I
H
O
P
N
Q
TO-3P
MIN. MAX.
15.75 16.25
21.7521.25
19.60 20.10
4.38 3.78
1.88 2.08
4.87 5.13
1.90 2.16
1.221.12
2.90 3.20
5.20 5.70
2.10 2.40
0.76
0.51
2.93 3.22
1.93 2.18
20 TYP
4.4TYP. 4.4TYP.
10 TYP
SEMICONDUCTOR
LITE-ON
REV. 3, Aug -2007, KTHD23
1
10
100
1000
10000
0.1 1 10 100
RATING AND CHARACTERISTIC CURVES
MBR3030PTL thru MBR3060PTL
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.3 0.4 0.8 0.9
1.0
10
100
0.5 0.6 0.7
0.1
1.0
PULSE WIDTH 300ua
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
0.2
1.0
10
100
0.1
PULSE WIDTH 300us
T
J
= 25 C
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
0.01
1.0
100
10
60 80 100
0.1
T
J
= 125 C
T
J
= 25 C
T
J
= 75 C
MBR3030PTL~ MBR3045PTL
MBR3050PTL ~ MBR3060PTL
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , VOLTS
T
J
= 25 C, f= 1MHz
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
15 10 50 100
220
50
100
150
200
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25 75 100 125 150
10
0
50
40
175
8.3ms Single Half-Sine-Wave
30
0
20
RESISTIVE OR
INDUCTIVE LOAD
CASE TEMPERATURE , C
0.1
