GBJ20005 thru GBJ2010
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability.
Reliable low cost construction utilizing m olded plastic
technique results in inexpensive product
The plas tic ma te ria l h a s U L flam ma b ility clas s ifica tio n
94V-0
UL Recognition File # E95060
ME CHANICAL DATA
Polarity : Sym bols molded on body
Weig ht : 0.23 ounces, 6.6 grams
Mounting position : Any
GBJ
2010
1000
700
1000
GBJ
2008
800
560
800
GBJ
2006
600
420
600
GBJ
2004
400
280
400
GBJ
2002
200
140
200
GBJ
20005
50
35
50
GBJ
2001
100
70
100
@T
C
=100 C
(with he ats ink
Note 2
)
(without heatsink)
NOTES : 1.Measured at 1.0MHz and appli ed reverse voltage of 4.0V DC.
2.Device mounted on 300mm x 300mm x 1.6mm Cu P late Heatsi nk.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
Maximum Av erage Forward
Re ctifie d Cur r ent
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum R ecurrent Peak Reverse Voltag e
Maximum R MS Volta ge
Maximum DC Blocking Voltage
Maximum f orward Voltage at 10.0A DC
20.0
240
1.05
T
J
Operating Temperature Range
-55 to +150 C
T
STG
Storage Temperature Range
-55 to +150 C
Typical Thermal Resistance (Note 2)
R
0JC
0.8
C/W
I
R
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=125 C
@T
J
=25 C 10
500
uA
V
A
A
V
UNIT
V
V
240
A S
2
I t
2
I t Rating for fusing (t < 8.3ms)
2
CHARACTERISTICS SYMBOL
3.6
C
J
60
pF
Typical Junction
Capacitance per element (Note 1)
REVE RSE VOLTAGE
- 50
to
1000
Volts
FOR WAR D CURRENT
- 20
Amperes
GLASS PA S SIVA TE D BRIDGE RECTIFIERS
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
am bient temperature unless otherw ise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
F o r capacitive lo ad, derate c u rr e n t b y 20%
GBJ
All Dimensions in millimete r
DIM.
GBJ
MIN. MAX.
A
C
D
E
F
G
H
B29.70 30.30
20.3019.70
17.0 18.0
4.70
10.80 11.20
2.30 2.70
3.10 3.40
4.40 3.80
M
L
K
J
I 4.80
3.40
0.800.60
2.00 2.40
0.90 1.10
7.70
7.30
N9.80 10.20
P
Q
O
2.50 2.90
3.80 4.20
(3.0) x 45
4.90
3.10 3.40
R
M
P
+
++
+-
--
-
~
~~
~~
~~
~
A
D
F
H
B
N
LC
EG
K
J
I
Q
OO
R
REV. 2, 01-Dec-2000, KBDG05
RATING AND CHARACTERISTIC CURVES
GBJ20005 thru GBJ2010
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FOR WARD CURRENT
AMPERES
40 60 80 100
15
0 20
5
25
140
CASE TEMPERATURE , C
20
10
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
120
WITHOUT HEATSINK
WITH HEATSINK
FIG.2 - MAXIM UM NON-REPETITIVE SURGE CURRENT
NUMB ER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CU RR ENT,
AMPERES
1 5 10 50 100220
0
100
300
200
Single Half-Sine-Wave
(JEDEC METHOD)
IN STANTANEOUS F O RWARD VOLTAGE, VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FOR WARD CURRENT ,(A)
0.2 0.4 1.2 1.4
0
0.1
1.0
10
0.6 0.8 1.0
0.01 1.8
1.6
100
TJ= 25 C
PULSE WIDTH 300us
CA PACIT ANCE , (pF)
REVERSE VOLTAGE , VOLTS
10.0 100
10
1.0 1.0
100
4.0
FIG.3 - TYPICAL JUNCTION CAPACITANCE
TJ= 25 C, f = 1MHz
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERS E CURRENT ,(u A)
20 40
0
1.0
10
100
60 80 100
0.1
1000
TJ= 25 C
TJ= 125 C
TJ= 100 C
TJ= 50 C
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
REV. 2, 01-Dec-2000, KBDG0 5
