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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP2D3N10C / FDPF2D3N10C N-Channel Shielded Gate PowerTrench(R) MOSFET 100 V, 222 A, 2.3 m Features General Description This N-Channel MV MOSFET is produced using ON Semiconductor's advanced PowerTrench(R) process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. Max rDS(on) = 2.3 m at VGS = 10 V, ID = 100 A Extremely Low Reverse Recovery Charge, Qrr 100% UIL Tested RoHS Compliant Applications Synchronous Rectification for ATX / Server / Telecom PSU Motor drives and Uninterruptible Power Supplies Micro Solar Inverter D G G G D S D S TO-220 S TO-220F MOSFET Maximum Ratings TC = 25 C unless otherwise noted. Symbol Ratings Parameter VDS Drain to Source Voltage FDP2D3N10C 100 VGS Gate to Source Voltage 20 20 Drain Current -Continuous ID -Continuous (Note 3) 222* 222* TC = 100C (Note 3) 157* 157* (Note 1) 888 888 Single Pulse Avalanche Energy PD TJ, TSTG (Note 2) V A 1176 mJ Power Dissipation TC = 25C 214 45 Power Dissipation TA = 25C 2.4 2.4 Operating and Storage Junction Temperature Range Units V TC = 25C -Pulsed EAS FDPF2D3N10C 100 W -55 to +175 C * Drain current limited by maximum junction temperature. Package limitation current is 120A. Thermal Characteristics FDP2D3N10C FDPF2D3N10C RJC Symbol Thermal Resistance, Junction to Case, Max. Parameter 0.7 3.3 RJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 Units C/W Package Marking and Ordering Information Device Marking FDP2D3N10C Device FDP2D3N10C Package TO-220 Packing Method Tube Quantity 50 units FDPF2D3N10C FDPF2D3N10C TO-220F Tube 50 units Semiconductor Components Industries, LLC, 2017 March, 2017, Rev. 1.0 Publication Order Number: FDP2D3N10C / FDPF2D3N10C/D 1 FDP2D3N10C / FDPF2D3N10C N-Channel Shielded Gate PowerTrench(R) MOSFET www.onsemi.com Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25 C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current 100 V 70 mV/C VDS = 80 V, VGS = 0 V 1 A VDS = 80 V, TJ= 150C 500 A VGS = 20 V, VDS = 0 V 100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 700 A 3.0 4.0 V rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 100 A 2.1 2.3 m gFS Forward Transconductance VDS = 5 V, ID = 100 A 222 2.0 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 0.1 7980 11180 pF 4490 6290 pF 40 75 pF 0.8 1.8 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge Qoss Output Charge 42 67 VDD = 50 V, ID = 100 A, VGS = 10 V, RGEN = 6 35 56 ns 74 118 ns 32 57 ns VGS = 0 V to 10 V 108 152 nC VDD = 50 V, ID = 100 A VDD = 50 V, VGS = 0 V 36 nC 22 nC 297 nC Drain-Source Diode Characteristic IS Maximum Continuous Drain to Source Diode Forward Current - - 222 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 888 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 100 A 0.9 1.3 V trr Reverse Recovery Time VGS = 0 V, VDD = 50 V, IF = 100 A, dIF/dt = 100 A/s 107 172 ns 191 306 nC 97 155 ns 492 788 nC Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, VDD = 50 V, IF = 100 A, dIF/dt = 300 A/s Notes: 1. Pulsed Id please refer to Figure.11 and Figure.12 "Forward Bias Safe Operating Area" for more details. 2. EAS of 1176 mJ is based on starting TJ = 25 C, L = 3 mH, IAS = 28 A, VDD = 90 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 89 A. 3. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. www.onsemi.com 2 FDP2D3N10C / FDPF2D3N10C N-Channel Shielded Gate PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted. 360 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 300 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 7 VGS = 10 V VGS = 6 V 240 VGS = 5.5 V 180 120 VGS = 5 V 60 VGS = 4.5 V 0 0 1 2 VGS = 5 V 5 4 VGS = 5.5 V 3 VGS = 6 V 2 1 VGS = 10 V 0 0 3 60 120 VDS, DRAIN TO SOURCE VOLTAGE (V) 240 300 360 Figure 2. Normalized On- Resistance vs. Drain Current and Gate Voltage 1.9 ID = 100 A 1.8 VGS = 10 V 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) rDS(on), DRAIN TO 16 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 180 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 12 ID = 100 A 8 TJ = 150 oC 4 TJ = 25 oC 0 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs. Junction Temperature Figure 4. On-Resistance vs. Gate to Source Voltage 400 IS, REVERSE DRAIN CURRENT (A) 360 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 300 ID, DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 4.5 V 6 VDS = 5 V 240 180 TJ = 25 oC 120 TJ = 175 oC 60 TJ = -55 oC 0 2 3 4 5 6 VGS = 0 V 100 10 TJ = 175 oC 1 0.1 TJ = -55 oC 0.01 0.001 0.0 7 TJ = 25 oC 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3 1.2 FDP2D3N10C / FDPF2D3N10C N-Channel Shielded Gate PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted. 10000 ID = 100 A 8 VDD = 50 V 6 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 30 V VDD = 75 V 4 10 f = 1 MHz VGS = 0 V 10 20 30 40 50 60 70 80 90 100 110 120 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs. Drain to Source Voltage Figure 7. Gate Charge Characteristics 240 ID, DRAIN CURRENT (A) 500 IAS, AVALANCHE CURRENT (A) Crss 1 0.1 0 Qg, GATE CHARGE (nC) 100 TJ = 25 oC TJ = 125 oC 10 TJ = 150 oC 200 VGS = 10 V 160 120 80 40 o RJC = 0.7 C/W 1 0.01 0.1 1 10 100 0 25 1000 50 75 100 125 150 175 o tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature 2000 1000 2000 1000 10 s ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Coss 100 2 0 Ciss 1000 100 10 1 THIS AREA IS LIMITED BY rDS(on) 100 s SINGLE PULSE TJ = MAX RATED 1 ms 10 ms o RJC = 0.7 C/W TC = 25 C 0.1 0.1 1 10 10 1 100 THIS AREA IS LIMITED BY rDS(on) 100 s SINGLE PULSE TJ = MAX RATED 1 ms RJC = 3.3 C/W CURVE BENT TO MEASURED DATA o TC = 25 C 0.1 0.1 400 VDS, DRAIN to SOURCE VOLTAGE (V) 10 ms o 100 ms CURVE BENT TO MEASURED DATA o 10 s 100 1 10 100 ms 100 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Forward Bias Safe Operating Area for FDPF2D3N10C Figure 11. Forward Bias Safe Operating Area for FDP2D3N10C www.onsemi.com 4 400 FDP2D3N10C / FDPF2D3N10C N-Channel Shielded Gate PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted. 100000 SINGLE PULSE RJc = 0.7 oC/W P(PK), PEAK TRANSIENT POWER (W) P(PK), PEAK TRANSIENT POWER (W) 100000 TC = 25 oC 10000 10000 1000 100 -5 10 -4 10 -3 10 -2 10 -1 10 0 1 10 SINGLE PULSE RJc = 3.3 oC/W 10 2 TC = 25 oC 1000 10 100 10 -5 10 -4 10 t, PULSE WIDTH (sec) -2 10 -1 0 10 1 10 10 2 10 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation for FDP2D3N10C r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -3 10 Figure 14. Single Pulse Maximum Power Dissipation for FDPF2D3N10C 2 DUTY CYCLE-DESCENDING ORDER 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: 0.01 ZJC(t) = r(t) x RJC RJC = 0.7 oC/W Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 -5 10 -4 10 -3 -2 10 -1 10 10 0 1 10 2 10 10 t, RECTANGULAR PULSE DURATION (sec) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 15. Junction-to-Case Transient Thermal Response Curve for FDP2D3N10C 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 0.01 PDM t1 t2 NOTES: 0.001 ZJC(t) = r(t) x RJC RJC = 3.3 oC/W Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.0001 -5 10 -4 10 -3 10 -2 -1 10 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 16. Junction-to-Case Transient Thermal Response Curve for FDPF2D3N10C www.onsemi.com 5 2 10 FDP2D3N10C / FDPF2D3N10C N-Channel Shielded Gate PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted. 3.89 3.60 0.36 M 10.360 10.109 A B B A 2.860 2.660 8.89 6.86 6.477 6.121 1.41 1.17 7 3 15.215 14.757 15.97 8.787 15.89 8.587 1 13.894 12.941 12.878 12.190 5 3 5 3 3 3 2.640 2.440 1 2.755 2.555 1.650 (SEE NOTE E) 1.250 1.91 5 3 C 0.889 0.787 0.36 M C B 0.457 0.357 5.180 4.980 5 3 4.672 4.472 NOTES: A. PACKAGE REFERENCE: JEDEC TO220 VARIATION AB B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5-2009. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. MAX WIDTH FOR F102 DEVICE = 1.35mm. F. DRAWING FILE NAME: TO220T03REV4. G. FAIRCHILD SEMICONDUCTOR. 3.962 3.505 B A 10.36 9.96 B 3.28 3.08 7.00 3.40 3.20 2.66 2.42 0.70 SEE NOTE "F" SEE NOTE "F" 6.88 6.48 1 X 45 B 16.00 15.60 16.07 15.67 (3.23) B 1 2.14 3 1.47 1.24 2.96 2.56 0.90 0.70 10.05 9.45 0.50 M A 30 0.45 0.25 2.54 B 2.54 B 4.90 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. OPTION 1 - WITH SUPPORT PIN HOLE. OPTION 2 - NO SUPPORT PIN HOLE. G. DRAWING FILE NAME: TO220M03REV5 0.60 0.45 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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