© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ200 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 110 A
IDM TC= 25°C, Pulse Width Limited by TJM 275 A
IATC= 25°C55 A
EAS TC= 25°C5 J
PDTC= 25°C 960 W
TJ-55...+150 °C
TJM 150 °C
Tstg -55...+150 °C
TL1.6mm (0.063 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (IXTK) 1.13/10 Nm/lb.in.
FCMounting Force (IXTX) 20..120 / 4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 200 V
VGS(th) VDS = VGS, ID = 3mA 2.0 4.5 V
IGSS VGS = ±20V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS = 0V 50 μA
TJ = 125°C 2.5 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25 , Note 1 24 mΩ
LinearL2TM Power
MOSFET w/Extended
FBSOA
IXTK110N20L2
IXTX110N20L2
N-Channel Enhancement Mode
Guaranteed FBSOA
Avalanche Rated
VDSS = 200V
ID25 = 110A
RDS(on) < 24mΩΩ
ΩΩ
Ω
DS100195(9/09)
G = Gate D = Drain
S = Source TAB = Drain
TO-264 (IXTK)
GDS
GDS
PLUS247(IXTX)
Advance Technical Information
Features
zDesigned for Linear Operation
zInternational Standard Packages
zAvalanche Rated
zGuaranteed FBSOA at 75°C
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zSolid State Circuit Breakers
zSoft Start Controls
zLinear Amplifiers
zProgrammable Loads
zCurrent Regulators
(TAB)
(TAB)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK110N20L2
IXTX110N20L2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
TO-264 (IXTK) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM (IXTX) Outline
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS= 10V, ID = 0.5 • ID25, Note 1 55 75 95 S
Ciss 23 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 2160 pF
Crss 320 pF
td(on) 40 ns
tr 100 ns
td(off) 33 ns
tf 135 ns
Qg(on) 500 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 110 nC
Qgd 182 nC
RthJC 0.13 °C/W
RthCS 0.15 °C/W
Safe-Operating-Area Specification
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
SOA VDS = 200V, ID = 2.88A, TC = 75°C, Tp = 5s 575 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 110 A
ISM Repetitive, Pulse Width Limited by TJM 440 A
VSD IF = 55A, VGS = 0V, Note 1 1.35 V
trr 420 ns
IRM 39 A
QRM 8.3 μC
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
IF = 55A, -di/dt = 100A/μs,
VR = 100V, VGS = 0V
© 2009 IXYS CORPORATION, All Rights Reserved
IXTK110N20L2
IXTX110N20L2
Fi g. 1. Outp ut C h aracteristics
@ T
J
= 25ºC
0
20
40
60
80
100
120
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
DS
- Volt s
I
D
- Ampere s
V
GS
= 20V
14V
12V
10V
8V
4
V
6
V
6.5
V
5
V
Fig. 2. Extended Output Characteri stics
@ T
J
= 25ºC
0
40
80
120
160
200
240
280
0 2 4 6 8 10 12 14 16 18 20
V
DS
- Volt s
I
D
- Amperes
V
GS
= 20V
14V
12V
10V
4
V
6
V
8
V
6.5
V
5
V
Fig. 3. Output Characteristics
@ T
J
= 125º C
0
20
40
60
80
100
120
01234567
V
DS
- Volt s
I
D
- A mperes
V
GS
= 20V
12V
10V
4
V
6V
8V
5
V
Fig. 4. R
DS(on)
Normalized to I
D
= 55A Valu e vs.
Junction T emperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Deg ree s Centi grade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 110A
I
D
= 55A
Fig. 5. R
DS(on)
Normalized to I
D
= 55A Valu e vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 20 40 60 80 100 120 140 160 180 200 220 240 260
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 6. Maximu m D r ai n C u rr en t v s.
Case Temp er atu re
0
20
40
60
80
100
120
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Ampe res
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK110N20L2
IXTX110N20L2
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Vo lts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
In tr i n sic D i o de
0
40
80
120
160
200
240
280
320
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
V
SD
- Vo lts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar g e
0
2
4
6
8
10
12
14
16
0 100 200 300 400 500 600 700 800
Q
G
- NanoCoulomb s
V
GS
- Volts
V
DS
= 100V
I
D
= 55A
I
G
= 10mA
Fi g . 11. C ap aci tance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volt s
Capa citance - Pic oFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maxi mum Tran si en t Th er mal I mp ed ance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2009 IXYS CORPORATION, All Rights Reserved
IXTK110N20L2
IXTX110N20L2
IXYS REF: T_110N20L2(9R)9-16-09
Fi g . 13. F o r war d -B ias Safe Op er a ti n g Area
@ T
C
= 25ºC
1
10
100
1,000
1 10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
100ms
Fi g . 14. F o r war d -B i as Safe Op er ati n g Area
@ T
C
= 75ºC
1
10
100
1,000
1 10 100 1,000
V
DS
- Vo lts
I
D
- Amperes
T
J
= 150ºC
T
C
= 75ºC
Single Puls e
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
100ms