Parameters IRK.105 Units
IT(AV) or IF(AV)
@ 85°C
IO(RMS) (*) 235 A
ITSM @ 50Hz 1785 A
IFSM @ 60Hz 1870 A
I2t @ 50Hz 15.91 KA2s
@ 60Hz 14.52 KA2s
I2√t 159.1 KA2√s
VRRM range 400 to 1600 V
TSTG - 40 to 150 oC
TJ- 40 to130 oC
(*) As AC switch.
105 A
Major Ratings and Characteristics
1
105 A
ADD-A-pakTM GEN V Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
IRK.105 SERIES
Bulletin I27133 rev. H 10/02
www.irf.com
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500VRMS isolating voltage
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
IRK.105 Series
2
Bulletin I27133 rev. H 10/02
www.irf.com
IT(AV) Max. average on-state
current (Thyristors) 180o conduction, half sine wave,
IF(AV) Max. average forward TC = 85oC
current (Diodes)
IO(RMS)Max. continuous RMS
on-state current.
As AC switch
ITSM Max. peak, one cycle 1785 t =10ms No voltage
or non-repetitive on-state 1870 t =8.3ms reapplied
IFSM or forward current 1500 t =10ms 100% VRRM
1570 t =8.3ms reapplied
2000 t =10ms TJ = 25oC,
2100 t =8.3ms no voltage reapplied
I2t Max. I2t for fusing 15.91 t =10ms No voltage
14.52 t =8.3ms reapplied
11.25 t =10ms 100% VRRM
10.27 t =8.3ms reapplied
20.00 t =10ms TJ = 25oC,
18.30 t =8.3ms no voltage reapplied
I2√t Max. I2√t for fusing (1) 159.1 K A2√s t = 0.1 to 10ms, no voltage reappl. TJ =TJ max
VT(TO) Max. value of threshold 0.80 Low level (3)
voltage (2) 0.85 High level (4)
rtMax. value of on-state 2.37 Low level (3)
slope resistance (2) 2.25 High level (4)
VTM Max. peak on-state or ITM = p x IT(AV)
VFM forward voltage IFM = p x IF(AV)
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 VDRM,
of rise of turned on 150 A/µs ITM =p x IT(AV), Ig = 500mA,
current tr < 0.5 µs, tp > 6 µs
IHMax. holding current 200 TJ = 25oC, anode supply = 6V,
mA resistive load, gate open circuit
ILMax. latching current 400 T J = 25oC, anode supply = 6V, resistive load
Parameters IRK.105 Units Conditions
235
On-state Conduction
Initial TJ = TJ max.
A
KA2s
V
mΩ
1.64 V
or
I(RMS) I(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
VRRM , maximum VRSM , maximum VDRM , max. repetitive IRRM
Voltage repetitive non-repetitive peak off-state voltage, IDRM
Code peak reverse voltage peak reverse voltage gate open circuit 130°C
-V V VmA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.105 10 1000 1100 1000 20
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
Sinusoidal
half wave,
Initial TJ = TJ max.
105
TJ = TJ max
TJ = TJ max
TJ = 25°C
(1) I2t for time tx = I2√t x √tx(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2(3) 16.7% x p x IAV < I < p x IAV
(4) I > p x IAV
IRK.105 Series
3
Bulletin I27133 rev. H 10/02
www.irf.com
TJJunction operating
temperature range
Tstg Storage temp. range - 40 to 150
RthJC Max. internal thermal
resistance, junction 0.135 Per module, DC operation
to case
RthCS Typical thermal resistance
case to heatsink
T Mounting torque ± 10%
to heatsink
busbar 3
wt Approximate weight 110 (4) gr (oz)
Case style TO-240AA JEDEC
Thermal and Mechanical Specifications
Parameters IRK.105 Units Conditions
- 40 to 130
0.1
5
(5) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. IRKT105/16AS90.
°C
K/W
Nm
Mounting surface flat, smooth and greased
IRRM Max. peak reverse and
IDRM off-state leakage current 20 mA TJ = 130oC, gate open circuit
at VRRM, VDRM
VINS RMS isolation voltage 2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
dv/dt Max. critical rate of rise TJ = 130oC, linear to 0.67 VDRM,
of off-state voltage (5) gate open circuit
500 V/µs
Triggering
Blocking
V
PGM Max. peak gate power 12
PG(AV) Max. average gate power 3
IGM Max. peak gate current 3 A
-VGM Max. peak negative
gate voltage
VGT Max. gate voltage 4.0 TJ = - 40°C
required to trigger 2.5 TJ = 25°C
1.7 TJ = 125°C
IGT Max. gate current 270 TJ = - 40°C
required to trigger 150 mA TJ = 25°C
80 TJ = 125°C
VGD Max. gate voltage
that will not trigger
IGD Max. gate current
that will not trigger
0.25 V
6mA
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
W
V
10
TJ = 125oC,
rated VDRM applied
TJ = 125oC,
rated VDRM applied
Parameters IRK. 105 Units Conditions
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
Parameters IRK.105 Units Conditions
Sine half wave conduction Rect. wave conduction
Devices Units
180o120o90o60o30o180o120o90o60o30o
IRK.105 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 °C/ W
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
IRK.105 Series
4
Bulletin I27133 rev. H 10/02
www.irf.com
Outline Table
Dimensions are in millimeters and [inches]
NOTE: To order the Optional Hardware see Bulletin I27900
IRK T 105 / 16 A S90
Device Code
12 3 45
Ordering Information Table
6
* * Available with no auxiliary cathode.
To specify change: 105 to 106
e.g. : IRKT106/16A etc.
IRK.106 types
With no auxiliary cathode
1- Module type
2- Circuit configuration (See Circuit Configuration table below)
3- Current code * *
4- Voltage code (See Voltage Ratings table)
5- A : Gen V
6- dv/dt code: S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
+
K2 G2
-
K1G1
~
(1)
(2)
(3)
(4) (5) (7) (6)
+
-
K1
G1
~
(1)
(2)
(3)
(4) (5)
+
-
~
(1)
(2)
(3)
K2
(7)
G2
(6)
IRKT IRKH IRKL IRKN
+
-
K1
G1
+
(1)
(2)
(3)
(4) (5)
IRK.105 Series
5
Bulletin I27133 rev. H 10/02
www.irf.com
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
70
80
90
100
110
120
130
0 20 40 60 80 100 120
30° 60° 90° 120° 180°
A verage On-state Curren t (A)
Maximum Allowable Cas e Tempe rature (°C)
Conduction Angle
IRK.105.. Series
R (DC) = 0 .27 K/W
thJC
70
80
90
100
110
120
130
0 20 40 60 80 100 120 140 160 180
DC
30° 60°
90°120° 180°
Average On-state Current (A)
Maximum A ll o wable Case Temperature (°C)
Conduction Period
IRK.105.. Series
R (DC) = 0.27 K/W
thJC
Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
0
20
40
60
80
100
120
140
160
180
200
0 20 40 60 80 100 120 140 160 180
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A )
IRK.105.. Series
Per Junction
T = 130°C
J
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100 120
RMS Limit
Maximum Average On-state Power Loss (W)
Aver a ge O n- s ta te Cu rr ent (A)
180°
120°
90°
60°
30°
Con duc ti on A ng le
IRK.105.. Series
Per Junction
T = 130°C
J
700
800
900
1000
1100
1200
1300
1400
1500
1600
1 10 100
Number Of Equal A mplitu de Half Cycle C u rr en t Puls e s (N)
Peak Half Sine Wave On-state Cur rent (A)
Initial T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
IRK.105.. Series
Pe r Junc tion 600
800
1000
1200
1400
1600
1800
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Initial T = 130°C
No Voltage Reapplied
Rated V Reapplied
Of Conduction May Not Be Maintained.
J
RRM
IR K.105. . Seri e s
Pe r Junction
IRK.105 Series
6
Bulletin I27133 rev. H 10/02
www.irf.com
Fig. 9 - On-state Power Loss Characteristics
Fig. 8 - On-state Power Loss Characteristics
0 20 40 60 80 100 120 140
Maximum Allo wa ble Ambient Temperature (°C)
0.5 K/W
0.3 K/W
R = 0.1 K/W - Delta R
thSA
0.2 K/W
0.7 K/W
1 K/W
2 K/W
0
100
200
300
400
500
600
0 40 80 120 160 200
Total Outpu t Curr ent (A)
Maximum Total Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x IRK.105.. Series
Sin gle Ph ase Bridge
Connected
T = 130°C
J
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
1 K/W
0.5 K/W
0.3 K/W
R = 0.1 K/W - Delta R
0.2 K/W
thSA
0
100
200
300
400
500
600
700
800
900
0 40 80 120 160 200 240 280
Total Outpu t Curr ent (A)
Maximum Total Power Loss (W)
120°
(Rect)
3 x IRK.105.. Series
Th ree Ph a s e Bri d g e
Connected
T = 130°C
J
Fig. 7 - On-state Power Loss Characteristics
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
2 K/W
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
R = 0.1 K/W - Delta R
thSA
0.2 K/W
0
50
100
150
200
250
300
350
0 40 80 120 160 200 240
180°
120°
90°
60°
30°
Total RMS Output Current (A)
Maximum Total On-state Power Loss (W)
Conduction Angle
IRK.105.. Series
Per Module
T = 130°C
J
IRK.105 Series
7
Bulletin I27133 rev. H 10/02
www.irf.com
Fig. 10 - On-state Voltage Drop Characteristics
1
10
100
1000
0 0.5 1 1.5 2 2.5 3 3.5
T = 25°C
J
Ins ta ntaneous On-state Cur r e nt (A)
Instantaneous On-state Voltage (V)
T = 130°C
J
IRK.105.. Series
Per Junct ion
Fig. 13 - Thermal Impedance ZthJC Characteristics
Fig. 11 - Recovery Charge Characteristics Fig. 12 - Recovery Current Characteristics
20
40
60
80
100
120
140
10 20 30 40 50 60 70 80 90 100
Maxi mum Reve rse Recove ry Cu rrent - Irr (A)
Rate Of Fall O f Forward Current - di/dt (A/µs)
100 A
50 A
I = 200 A
TM
20 A
10 A
IRK.105.. Series
T = 125 °C
J
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq u a re Wa v e Puls e Du ra ti o n (s )
thJC
Tra nsie nt Thermal Im pedanc e Z (K/W)
IRK.105.. Series
Per Junction
Steady Sta te Value:
R = 0.27 K/W
(DC Op eration)
thJC
100
200
300
400
500
600
700
10 20 30 40 50 60 70 80 90 100
100 A
50 A
Rate Of Fa ll Of On-sta te Current - di/dt (A/ µs)
Maximum Reverse Rec o very Cha rg e - Qrr (µC)
I = 200 A
TM
20 A
10 A
IRK.105.. Series
T = 125 °C
J
IRK.105 Series
8
Bulletin I27133 rev. H 10/02
www.irf.com
Fig. 14- Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b)
(a)
(4) (3) (2) (1)
Instantaneous Gate Current (A)
Ins tantaneous Gate Voltage (V)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
a)Recommended load line for
b)Recommended load line for
VGD IGD Freq uency Limited by PG(AV)
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
<= 30% rated di/dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
rated di/dt: 2 0 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
Rectangular gate pulse
IRK.105.. Series
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
