PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET(R) Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) S ID (Package Limited) G Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability 75V 1.46m 1.85m 350Ac 195A D D S G TO-247AC G D S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 350c ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 250c ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 195 IDM Pulsed Drain Current d 1280 PD @TC = 25C Maximum Power Dissipation 520 W W/C V Linear Derating Factor 3.4 VGS Gate-to-Source Voltage 20 dv/dt TJ Peak Diode Recovery f 13 Operating Junction and -55 to + 175 TSTG Storage Temperature Range A V/ns C 300 Soldering Temperature, for 10 seconds (1.6mm from case) 10lbxin (1.1Nxm) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e IAR Avalanche Currentd EAR Repetitive Avalanche Energy g 430 mJ See Fig. 14, 15, 22a, 22b A mJ Thermal Resistance Symbol RJC RCS RJA Parameter Typ. Max. Junction-to-Case k --- 0.29 Case-to-Sink, Flat Greased Surface 0.24 --- --- 40 Junction-to-Ambient jk www.irf.com Units C/W 1 http://store.iiic.cc/ 06/02/08 IRFP4368PbF Static @ TJ = 25C (unless otherwise specified) Symbol Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 75 --- --- --- 0.077 --- --- 1.46 1.85 2.0 --- 4.0 --- --- 20 --- --- 250 --- --- 100 --- --- -100 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 5mAd m VGS = 10V, ID = 195A g V VDS = VGS, ID = 250A A VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Qg Qgs Qgd Qsync Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) 650 --- --- --- --- --- 380 79 105 275 --- 570 --- --- --- S nC RG(int) td(on) Internal Gate Resistance Turn-On Delay Time --- 0.80 43 --- --- tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- 220 --- --- 170 --- --- 260 --- --- 19230 --- --- 1670 --- --- 770 --- Effective Output Capacitance (Energy Related)i --- 1700 --- --- 1410 --- Effective Output Capacitance (Time Related)h Conditions VDS = 50V, ID = 195A ID = 195A VDS = 38V VGS = 10V g ID = 195A, VDS =0V, VGS = 10V ns pF VDD = 49V ID = 195A RG = 2.7 VGS = 10V g VGS = 0V VDS = 50V = 100kHz VGS = 0V, VDS = 0V to 60V i VGS = 0V, VDS = 0V to 60V h Diode Characteristics Symbol Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr (Body Diode)di Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units --- --- --- 350c --- 1280 A Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. TJ = 25C, IS = 195A, VGS = 0V g TJ = 25C VR = 64V, TJ = 125C IF = 195A di/dt = 100A/s g TJ = 25C S --- --- 1.3 V --- 130 200 ns --- 140 210 --- 450 680 nC TJ = 125C --- 530 800 --- 9.1 --- A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Refer to App Notes (AN-1140). Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.022mH RG = 25, IAS = 195A, VGS =10V. Part not recommended for use above this value. ISD 195A, di/dt 1740A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90C. 2 www.irf.com http://store.iiic.cc/ IRFP4368PbF 1000 1000 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V 100 BOTTOM 4.5V 100 4.5V 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 10 10 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 2.5 100 T J = 175C T J = 25C 10 1.0 ID = 195A VGS = 10V 2.0 (Normalized) VDS = 25V 60s PULSE WIDTH RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 1000 1.5 1.0 0.5 1 2 3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100120140160180 VGS , Gate-to-Source Voltage (V) T J , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 1E+006 12.0 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd VGS , Gate-to-Source Voltage (V) ID= 195A Coss = Cds + Cgd 100000 C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) Ciss 10000 Coss Crss 1000 100 10.0 VDS= 60V VDS= 38V 8.0 6.0 4.0 2.0 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 50 100 150 200 250 300 350 400 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage www.irf.com 3 http://store.iiic.cc/ IRFP4368PbF 10000 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) T J = 175C OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100 T J = 25C 10 1 100sec 100 1msec 10msec 10 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.0 0.4 0.8 1.2 1.6 1 2.0 V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 350 Limited By Package 250 200 150 100 50 0 25 50 75 100 125 150 175 95 Id = 5.0mA 90 85 80 75 70 -60 -40 -20 0 20 40 60 80 100120140160180 T C , Case Temperature (C) T J , Temperature ( C ) Fig 10. Drain-to-Source Breakdown Voltage Fig 9. Maximum Drain Current vs. Case Temperature 6.0 EAS , Single Pulse Avalanche Energy (mJ) 2000 5.0 ID 33A 53A BOTTOM 195A TOP 1500 4.0 Energy (J) 100 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 300 10 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) ID, Drain Current (A) DC 1 0.1 3.0 1000 2.0 1.0 500 0.0 0 10 20 30 40 50 60 70 80 25 75 100 125 150 175 Starting T J , Junction Temperature (C) VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 50 Fig 12. Maximum Avalanche Energy vs. DrainCurrent 4 www.irf.com http://store.iiic.cc/ IRFP4368PbF Thermal Response ( Z thJC ) C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 J J 1 R2 R2 2 1 R3 R3 Ri (C/W) R4 R4 C 2 3 3 4 4 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 R1 R1 i (sec) 0.0145 0.000024 0.0661 0.000148 0.1257 0.002766 0.0838 0.017517 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) 0.01 100 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 500 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 195A 400 300 200 100 0 25 50 75 100 125 150 PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 175 Starting T J , Junction Temperature (C) Fig 15. Maximum Avalanche Energy vs. Temperature www.irf.com 5 http://store.iiic.cc/ IRFP4368PbF 30 IF = 72A V R = 64V 3.5 25 TJ = 25C TJ = 125C 3.0 2.5 IRR (A) VGS(th) , Gate threshold Voltage (V) 4.0 ID = 250A 2.0 ID = 1.0mA 20 15 ID = 1.0A 1.5 10 1.0 0.5 5 -75 -50 -25 0 25 50 75 100 125 150 175 200 0 200 T J , Temperature ( C ) 600 800 1000 Fig. 17 - Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage vs. Temperature 30 1000 25 IF = 108A V R = 64V 920 TJ = 25C TJ = 125C 760 IF = 72A V R = 64V 840 20 Q RR (A) IRR (A) 400 diF /dt (A/s) 15 TJ = 25C TJ = 125C 680 600 520 440 10 360 280 5 200 0 200 400 600 800 1000 0 200 diF /dt (A/s) 400 600 800 1000 diF /dt (A/s) Fig. 18 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Stored Charge vs. dif/dt 1000 IF = 108A V R = 64V 920 840 TJ = 25C TJ = 125C Q RR (A) 760 680 600 520 440 360 280 200 0 200 400 600 800 1000 diF /dt (A/s) 6 Fig. 20 - Typical Stored Charge vs. dif/dt http://store.iiic.cc/ www.irf.com IRFP4368PbF D.U.T Driver Gate Drive - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D= Period P.W. + VDD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG + V - DD IAS VGS 20V tp A 0.01 I AS Fig 21a. Unclamped Inductive Test Circuit LD Fig 21b. Unclamped Inductive Waveforms VDS VDS 90% + VDD - 10% D.U.T VGS VGS Pulse Width < 1s Duty Factor < 0.1% td(on) Fig 22a. Switching Time Test Circuit tr td(off) tf Fig 22b. Switching Time Waveforms Id Vds Vgs L VCC DUT 0 Vgs(th) 1K Qgs1 Qgs2 Fig 23a. Gate Charge Test Circuit Qgd Qgodr Fig 23b. Gate Charge Waveform www.irf.com http://store.iiic.cc/ 7 IRFP4368PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information (;$03/( 7+,6,6$1,5)3( :,7+$66(0%/< /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(+ 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 3$57180%(5 ,5)3( + $66(0%/< /27&2'( '$7(&2'( <($5 :((. /,1(+ TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/08 8 www.irf.com http://store.iiic.cc/