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LF353 Wide Bandwidth Dual JFET Input Operational Amplifier
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1FEATURES Simplified Schematic
2• Internally Trimmed Offset Voltage: 10 mV
• Low Input Bias Current: 50pA
• Low Input Noise Voltage: 25 nV/√Hz
• Low Input Noise Current: 0.01 pA/√Hz
• Wide Gain Bandwidth: 4 MHz
• High Slew Rate: 13 V/μs
• Low Supply Current: 3.6 mA
• High Input Impedance: 1012Ω
• Low Total Harmonic Distortion : ≤0.02%
• Low 1/f Noise Corner: 50 Hz
• Fast Settling Time to 0.01%: 2 μs
DESCRIPTION
These devices are low cost, high speed, dual JFET Figure 1. 1/2 Dual
input operational amplifiers with an internally trimmed
input offset voltage (BI-FET II technology). They
require low supply current yet maintain a large gain Dual-In-Line Package
bandwidth product and fast slew rate. In addition, well Top View
matched high voltage JFET input devices provide
very low input bias and offset currents. The LF353 is
pin compatible with the standard LM1558 allowing
designers to immediately upgrade the overall
performance of existing LM1558 and LM358 designs.
These amplifiers may be used in applications such as
high speed integrators, fast D/A converters, sample
and hold circuits and many other circuits requiring low
input offset voltage, low input bias current, high input
impedance, high slew rate and wide bandwidth. The Figure 2. 8-Pin SOIC (See D Package)
devices also exhibit low noise and offset voltage drift. 8-Pin PDIP (See P Package)
Typical Connection
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2004, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings(1)(2)
Supply Voltage ±18V
Power Dissipation See(3)
Operating Temperature Range 0°C to +70°C
Tj(MAX) 150°C
Differential Input Voltage ±30V
Input Voltage Range(4) ±15V
Output Short Circuit Duration Continuous
Storage Temperature Range −65°C to +150°C
Lead Temp. (Soldering, 10 sec.) 260°C
Soldering Information: Dual-In-Line Package Soldering (10 sec.) 260°C
Small Outline Package Vapor Phase (60 sec.) 215°C
Infrared (15 sec.) 220°C
ESD Tolerance(5) 1000V
θJA D Package TBD
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for
which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good
indication of device performance.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) For operating at elevated temperatures, the device must be derated based on a thermal resistance of 115°C/W typ junction to ambient
for the P package, and 160°C/W typ junction to ambient for the D package.
(4) Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
(5) Human body model, 1.5 kΩin series with 100 pF.
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DC Electrical Characteristics
LF353
Symbol Parameter Conditions Units
MIn Typ Max
VOS Input Offset Voltage RS=10kΩ, TA=25°C 5 10 mV
Over Temperature 13 mV
ΔVOS/ΔT Average TC of Input Offset Voltage RS=10 kΩ10 μV/°C
IOS Input Offset Current Tj=25°C(1)(2) 25 100 pA
Tj≤70°C 4 nA
IBInput Bias Current Tj=25°C(1)(2) 50 200 pA
Tj≤70°C 8 nA
RIN Input Resistance Tj=25°C 1012 Ω
AVOL Large Signal Voltage Gain VS=±15V, TA=25°C 25 100 V/mV
VO=±10V, RL=2 kΩ
Over Temperature 15 V/mV
VOOutput Voltage Swing VS=±15V, RL=10kΩ±12 ±13.5 V
VCM Input Common-Mode Voltage VS=±15V ±11 +15 V
Range −12 V
CMRR Common-Mode Rejection Ratio RS≤10kΩ70 100 dB
PSRR Supply Voltage Rejection Ratio See(3) 70 100 dB
ISSupply Current 3.6 6.5 mA
(1) These specifications apply for VS=±15V and 0°C≤TA≤+70°C. VOS, IBand IOS are measured at VCM=0.
(2) The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature,
Tj. Due to the limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation
the junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. Tj=TA+θjA PDwhere θjA is the
thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum.
(3) Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with
common practice. VS= ±6V to ±15V.
AC Electrical Characteristics(1)
LF353
Symbol Parameter Conditions Units
Min Typ Max
Amplifier to Amplifier Coupling TA=25°C, f=1 Hz−20 kHz −120 dB
(Input Referred)
SR Slew Rate VS=±15V, TA=25°C 8.0 13 V/μs
GBW Gain Bandwidth Product VS=±15V, TA=25°C 2.7 4 MHz
enEquivalent Input Noise Voltage TA=25°C, RS=100Ω, f=1000 Hz 16 nV/√Hz
inEquivalent Input Noise Current Tj=25°C, f=1000 Hz 0.01 pA/√Hz
THD Total Harmonic Distortion AV=+10, RL=10k, VO=20Vp−p, <0.02 %
BW=20 Hz-20 kHz
(1) These specifications apply for VS=±15V and 0°C≤TA≤+70°C. VOS, IBand IOS are measured at VCM=0.
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Typical Performance Characteristics
Input Bias Current Input Bias Current
Figure 3. Figure 4.
Supply Current Positive Common-Mode Input Voltage Limit
Figure 5. Figure 6.
Negative Common-Mode Input Voltage Limit Positive Current Limit
Figure 7. Figure 8.
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Typical Performance Characteristics (continued)
Negative Current Limit Voltage Swing
Figure 9. Figure 10.
Output Voltage Swing Gain Bandwidth
Figure 11. Figure 12.
Bode Plot Slew Rate
Figure 13. Figure 14.
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Typical Performance Characteristics (continued)
Distortion
vs.
Frequency Undistorted Output Voltage Swing
Figure 15. Figure 16.
Open Loop Frequency Response Common-Mode Rejection Ratio
Figure 17. Figure 18.
Power Supply Rejection Ratio Equivalent Input Noise Voltage
Figure 19. Figure 20.
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Typical Performance Characteristics (continued)
Open Loop Voltage Gain (V/V) Output Impedance
Figure 21. Figure 22.
Inverter Settling Time
Figure 23.
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Pulse Response
Figure 24. Small Signaling Inverting Figure 25. Large Signal Inverting
Figure 26. Small Signal Non-Inverting Figure 27. Large Signal Non-Inverting
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APPLICATION HINTS
These devices are op amps with an internally trimmed input offset voltage and JFET input devices (BI-FET II).
These JFETs have large reverse breakdown voltages from gate to source and drain eliminating the need for
clamps across the inputs. Therefore, large differential input voltages can easily be accommodated without a large
increase in input current. The maximum differential input voltage is independent of the supply voltages. However,
neither of the input voltages should be allowed to exceed the negative supply as this will cause large currents to
flow which can result in a destroyed unit.
Exceeding the negative common-mode limit on either input will force the output to a high state, potentially
causing a reversal of phase to the output. Exceeding the negative common-mode limit on both inputs will force
the amplifier output to a high state. In neither case does a latch occur since raising the input back within the
common-mode range again puts the input stage and thus the amplifier in a normal operating mode.
Exceeding the positive common-mode limit on a single input will not change the phase of the output; however, if
both inputs exceed the limit, the output of the amplifier will be forced to a high state.
The amplifiers will operate with a common-mode input voltage equal to the positive supply; however, the gain
bandwidth and slew rate may be decreased in this condition. When the negative common-mode voltage swings
to within 3V of the negative supply, an increase in input offset voltage may occur.
Each amplifier is individually biased by a zener reference which allows normal circuit operation on ±6V power
supplies. Supply voltages less than these may result in lower gain bandwidth and slew rate.
The amplifiers will drive a 2 kΩload resistance to ±10V over the full temperature range of 0°C to +70°C. If the
amplifier is forced to drive heavier load currents, however, an increase in input offset voltage may occur on the
negative voltage swing and finally reach an active current limit on both positive and negative swings.
Precautions should be taken to ensure that the power supply for the integrated circuit never becomes reversed in
polarity or that the unit is not inadvertently installed backwards in a socket as an unlimited current surge through
the resulting forward diode within the IC could cause fusing of the internal conductors and result in a destroyed
unit.
As with most amplifiers, care should be taken with lead dress, component placement and supply decoupling in
order to ensure stability. For example, resistors from the output to an input should be placed with the body close
to the input to minimize “pick-up” and maximize the frequency of the feedback pole by minimizing the
capacitance from the input to ground.
A feedback pole is created when the feedback around any amplifier is resistive. The parallel resistance and
capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole.
In many instances the frequency of this pole is much greater than the expected 3 dB frequency of the closed
loop gain and consequently there is negligible effect on stability margin. However, if the feedback pole is less
than approximately 6 times the expected 3 dB frequency a lead capacitor should be placed from the output to the
input of the op amp. The value of the added capacitor should be such that the RC time constant of this capacitor
and the resistance it parallels is greater than or equal to the original feedback pole time constant.
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Typical Applications
Three-Band Active Tone Control
(1) All controls flat.
(2) Bass and treble boost, mid flat.
(3) Bass and treble cut, mid flat.
(4) Mid boost, bass and treble flat.
(5) Mid cut, bass and treble flat.
• All potentiometers are linear taper
• Use the LF347 Quad for stereo applications
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PACKAGE OPTION ADDENDUM
www.ti.com 9-Mar-2013
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Top-Side Markings
(4)
Samples
LF353M ACTIVE SOIC D 8 95 TBD Call TI Call TI 0 to 70 LF353
M
LF353M/NOPB ACTIVE SOIC D 8 95 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LF353
M
LF353MX ACTIVE SOIC D 8 2500 TBD Call TI Call TI 0 to 70 LF353
M
LF353MX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LF353
M
LF353N ACTIVE PDIP P 8 40 TBD Call TI Call TI 0 to 70 LF
353N
LF353N/NOPB ACTIVE PDIP P 8 40 Green (RoHS
& no Sb/Br) CU SN Level-1-NA-UNLIM 0 to 70 LF
353N
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) Only one of markings shown within the brackets will appear on the physical device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
PACKAGE OPTION ADDENDUM
www.ti.com 9-Mar-2013
Addendum-Page 2
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LF353MX SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LF353MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 21-Dec-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LF353MX SOIC D 8 2500 349.0 337.0 45.0
LF353MX/NOPB SOIC D 8 2500 349.0 337.0 45.0
PACKAGE MATERIALS INFORMATION
www.ti.com 21-Dec-2012
Pack Materials-Page 2
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