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Doc. No. 5SYA1662-00 July 03
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Repetitive peak reverse voltage VRRM 1700 V
Continuous forward current IF150 A
Repetitive peak forward current IFRM Limited by Tvjmax 300 A
Junction temperature Tvj -40 150 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur
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Tvj = 25 °C 1.4 1.65 2.0 V
Continuous forward voltage VFIF = 150 A Tvj = 125 °C 1.7 V
Tvj = 25 °C 100 µA
Continuous r everse curren t IRVR = 1700 V Tvj = 125 °C 5 mA
Tvj = 25 °C 118 A
Peak reverse recovery current IRM Tvj = 125 °C 146 A
Tvj = 25 °C 43 µC
Reco vere d cha rge QRR Tvj = 125 °C 73 µC
Tvj = 25 °C 460 ns
Reverse recovery time trr Tvj = 125 °C 660 ns
Tvj = 25 °C 32 mJ
Reverse recovery energy Erec
IF = 150 A,
VR = 900 V,
-diF/dt = 800 A/µs,
Lσ = 800 nH,
Tvj = 125 °C,
Inductive load,
Switch:
2x 5SMX12K1701 Tvj = 125 °C 53 mJ
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Doc. No. 5SYA1662-00 Jul y 03 page 2 of 3
0
50
100
150
200
250
300
00.511.522.5
VF [V]
I
F
[A]
125°C
25°C
0
25
50
75
100
0 50 100 150 200 250 300
IF [A]
E
rec
[mJ]
0
50
100
150
200
Q
RR
[µC], I
RM
[A]
Erec
QRR
IRM
Vcc = 900 V
di/dt = 800 A/µs
Tvj = 125 °C
Lσ = 800 nH
)LJ Typical diode forward characteristics )LJ Typical reverse recovery characteristics
vs. forward current
-150
-100
-50
0
50
100
150
200
0 400 800 1200 1600 2000 2400
time [ns]
I
F
[A]
-1200
-1000
-800
-600
-400
-200
0
200
V
R
[V]
IR
VR
VCC = 900 V
IF = 150 A
di/dt = 800 A/µs
Tvj = 125 °C
Lσ = 800 nH
0
25
50
75
100
0 200 400 600 800 1000 1200
di/dt [A/µs]
E
rec
[mJ]
0
50
100
150
200
Q
RR
[µC], I
RM
[A]
Erec QRR
IRM
Vcc = 90 0 V
IF = 150 A
Tvj = 125 °C
Lσ = 800 nH
)LJ Typical diode reverse recovery behaviour )LJ Ty pical reverse recovery vs. di/dt
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This technical information specifies semiconductor devices but promises no characteristics. No warranty or
guarantee expressed or implied is made regarding delivery, performance or suitability.
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$%%6ZLW]HUODQG/WG Doc. No. 5SYA1662-00 July 03
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Fabri kstra sse 3
CH-5600 Lenzburg, Switzerland
Telepho ne +41 (0)58 586 141 9
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
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Overall die L x W 11.9 x 11.9 mm
exposed
front metal L x W 9.9 x 9.9 mm
Dimensions
thickness 385 ± 15 µm
front AISi1 4 µm
Metalli zat ion 1) back AI / Ti / Ni / Ag 1.2 µm
1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors,
Doc. No. 5SYA20 33-01 Apr il 02.
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