955 ,) 9 $ )DVW'LRGH'LH 6/;. 35(/,0,1$5< 'LHVL]H[PP Doc. No. 5SYA1662-00 July 03 * * * * )DVWDQGVRIWUHYHUVHUHFRYHU\ /RZORVVHV 5XJJHG62$VDIHRSHUDWLQJDUHD 3DVVLYDWLRQ6,3261LWULGHSOXV3RO\LPLGH 0D[LPXPUDWHGYDOXHV 3DUDPHWHU Repetitive peak reverse voltage Continuous forward current Repetitive peak forward current Junction temperature 6\PERO PD[ 8QLW VRRM 1700 V IF 150 A 300 A -40 150 C PLQ W\S PD[ 8QLW 1.4 1.65 2.0 V IFRM &RQGLWLRQV PLQ Limited by Tvjmax Tvj 1) Maximum rated values indicate limits beyond which damage to the device may occur 'LRGHFKDUDFWHULVWLFYDOXHV 3DUDPHWHU 6\PERO &RQGLWLRQV Continuous forward voltage VF IF = 150 A Continuous reverse current IR VR = 1700 V Peak reverse recovery current IRM Recovered charge QRR Reverse recovery time Reverse recovery energy trr Erec IF = 150 A, VR = 900 V, -diF/dt = 800 A/s, L = 800 nH, Tvj = 125 C, Inductive load, Switch: 2x 5SMX12K1701 Tvj = 25 C Tvj = 125 C 1.7 Tvj = 25 C V 100 A Tvj = 125 C 5 mA Tvj = 25 C 118 A Tvj = 125 C 146 A Tvj = 25 C 43 C Tvj = 125 C 73 C Tvj = 25 C 460 ns Tvj = 125 C 660 ns Tvj = 25 C 32 mJ Tvj = 125 C 53 mJ $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH 6/;. 100 300 200 Vcc = 900 V di/dt = 800 A/s Tvj = 125 C L = 800 nH 250 25C IRM 75 150 125C 150 50 100 QRR QRR [C], IRM [A] Erec [mJ] IF [A] 200 100 25 50 Erec 50 0 0 0.5 1 1.5 2 0 2.5 50 100 )LJ Typical diode forward characteristics VCC = 900 V IF = 150 A di/dt = 800 A/s Tvj = 125 C L = 800 nH 150 200 0 300 200 Vcc = 900 V IF = 150 A Tvj = 125 C L = 800 nH -400 VR [V] 50 IF [A] -200 IR 0 Typical reverse recovery characteristics vs. forward current 0 100 -600 IRM 75 150 50 100 QRR Erec -50 250 100 Erec [mJ] 200 200 IF [A] VF [V] )LJ 150 VR -100 -800 25 QRR [C], IRM [A] 0 50 -1000 -150 0 400 800 1200 1600 2000 -1200 2400 0 0 Typical diode reverse recovery behaviour 400 600 800 1000 0 1200 di/dt [A/s] time [ns] )LJ 200 )LJ Typical reverse recovery vs. di/dt $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Doc. No. 5SYA1662-00 July 03 page 2 of 3 6/;. 0HFKDQLFDOSURSHUWLHV 3DUDPHWHU 8QLW Dimensions Metallization 1) Overall die L x W 11.9 x 11.9 mm exposed LxW front metal 9.9 x 9.9 mm thickness 385 15 m 4 m 1.2 m front AISi1 back AI / Ti / Ni / Ag 1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 April 02. 2XWOLQH'UDZLQJ 1RWH$OOGLPHQVLRQVDUHVKRZQLQPP This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH $%%6ZLW]HUODQG/WG 6HPLFRQGXFWRUV Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1662-00 July 03