TOSHIBA 2$K3301 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSIII) 2SK3301 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 6.8MAX. % 5.2402 | & O.6MAX. e Low Drain-Source ON Resistance : RDg(QN) = 15 (Typ.) af High Forward Transfer Admittance : |Yf,| = 0.658 (Typ.) , , : 8 Low Leakage Current : Ipgg = 100 A (Max.) (Vpg = 720 V) sat ! i o.6MAX. @ Enhancement-Mode : Vih = 2.4~3.4V | (Vps = 10 V, Ip = 1 mA) 2.3/2.3) ~ Z MAXIMUM RATINGS (Ta = 25C) 2 CHARACTERISTIC SYMBOL | RATING | UNIT |] 5 Gann HEAT SINK Drain-Source Voltage VDSS 900 Vv 3. uy RCE ) 3 Drain-Gate Voltage (Rag = 20k) VDGR 900 Vv JEDEC Gate-Source Voltage Vass +30 Vv DG 1p 1 A EIAg SC-64 DCDrain Current Pulse Ipp 9 A TOSHIBA 2-7B1B Drain Power Dissipation (Ta = 25C)| Pp 20 WwW Weight : 0.36g Single Pulse Avalanche Energy** EAS 140 mJ coun. Avalanche Current IAR 1 A s2202.| 3 0.6MAX. |_ ae Repetitive Avalanche Energy* EAR 2.0 mJ | Wy Channel Temperature Teh 150 C 3 3 Storage Temperature Range Tstg 55~150 C o6+015- i a = 0.95MAX: . N THERMAL CHARACTERISTICS an eee osm CHARACTERISTIC SYMBOL | MAX.| UNIT | 2 o| 2 Thermal Resistance, Channel to Case Rth (ch-c) | 6.25 |C/W 123 F[s Thermal Resistance, Channel to Ambient Rth (ch-a) | 125 |C/W == Note ; 1. GATE 2 * Repetitive rating ; Pulse Width Limited by Max. 2. DRAIN 1 junction temperature. (HEAT SINK) #* Vpp = 90V, Toh = 25C (initial), L = 257 mH 3. SOURCE 3 Ra = 250, I~AR = 1A JEDEC _ EI -64 This transistor is an electrostatic sensitive device. AS 8C-6 Please handle with caution. TOSHIBA 2-7B2B Weight : 0.36g 961001EAA2 TOSHIBA Semiconductor Reliability Handbook. @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-10-22 1/2 TOSHIBA 2SK3301 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Gate Leakage Current Iass___|Vqs = 380V, Vpgs =0V | 10] ywA Gate-Source Breakdown =t = + _ Voltage V (BR) Gssiig = 10 4A, Vpg =0V +30 Vv Drain Cut-off Current Ipss__|Vps = 720V, Vag =0V 100 | wA Drain-Source Breakdown Voltage V (BR) DSs|Ip = 10mA, Veg =0V 900 |} Vv Gate Threshold Voltage Vth Vps = 10V, Ip =1mA 24) 3.4 Vv Drain-Source ON Resistance | RDS (ON) | VGS = 10V, Ip =0.5A 15 20 O Forward Transfer _ _ Admittance [Yfz| Vpg = 10V, Ip =0.5A 0.3 | 0.65) S Input Capacitance Cigg 165 Reverse Transfer C Vps = 25V, Vag = OV, 5 Fr Capacitance TSS f= 1MHz A P Output Capacitance Coss i 7 Rise Time ty tov =a vour| | 1] Vv GS oy Turn-on Time ton RL _ 60} Switching S = 800 0 ns Time Fall Time te e _ 40| =4 . t VIN : ty, te < Sns, VDD 00V 110 Turn-off Time | off | Duty = 1%, tw = 10 us Total Gate Charge (Gate- Q _ 6} Source Plus Gate-Drain) 6 Vpp = 400 V, Vas = 10V, Cc Gate-Source Charge Qes Ip=1A 3/ n Gate-Drain (Miller) Charge Qed _ 3; SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Continuous Drain Reverse I 1/ A Current DR - - - Pulse Drain Reverse Current | IpRpP 2| A Diode Forward Voltage VpsF |IpR=1A, Vag =0V |-17] V Reverse Recovery Time try IpR = 1A, Vag =0V | 1300] ns Reverse Recovery Charge Qrr dIpr/dt = 100 A/ us 1.95; uC MARKING *x Lot Number K3301*+ TYPE | : [EH Month (Starting from Alphabet A) UU Year (Last Number of the Christian Era) 1999-10-22 2/2