5/2/03
DB90048-AAS/A4
OPTICALLY COUPLED ISOLATOR
PHOTODARLINGTON OUTPUT
APPROVALS
ll UL recognised, File No. E91231
DESCRIPTION
The 4N29, 4N30, 4N31, 4N32, 4N33 series of
optically coupled isolators consist of an infrared
light emitting diode and NPN silicon
photodarlington in a space efficient dual in line
plastic package.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Current Transfer Ratio
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lAll electrical parameters 100% tested
lCustom electrical selections available
APPLICATIONS
lComputer terminals
lIndustrial systems controllers
lMeasuring instruments
lSignal transmission between systems of
different potentials and impedances
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 80mA
Reverse Voltage 5V
Power Dissipation 100mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 30V
Collector-base Voltage BVCBO 50V
Emitter-collector Voltage BVECO 5V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 250mW
(derate linearly 3.3mW/°C above 25°C)
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
Dimensions in
mm
2.54
6.9
6.1
8.9
max.
1.4
0.9 2.54
min.
5.3
max.
15°
max.
0.25
0.48
8.3 max.
6
1
2
3
5
4
OPTION G
8.3 max
SURFACE MOUNT
OPTION SM
10.16
10.2
9.5
0.26
1.2
0.6 1.4
0.9
4N29, 4N30, 4N31, 4N32, 4N33
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.5 VIF = 50mA
Reverse Current (IR)10 µA VR = 6V
Output Collector-emitter Breakdown (BVCEO)30 VIC = 1mA (note 2)
Collector-base Breakdown (BVCBO)50 VIC = 100µA
Emitter-collector Breakdown (BVECO)5VIE = 100µA
Collector-emitter Dark Current (ICEO)100 nA VCE = 10V
Coupled Collector Output Current ( IC ) (Note 2)
4N32, 4N33 50 mA 10mA IF , 10V VCE
4N29, 4N30 10 mA 10mA IF , 10V VCE
4N31 5mA 10mA IF , 10V VCE
Collector-emitter Saturation VoltageVCE(SAT)
4N29,4N30,4N32,4N33 1.0 V8mA IF , 2mA IC
4N31 1.2 V8mA IF , 2mA IC
Input to Output Isolation Voltage VISO 5300 VRMS (note 1)
7500 VPK (note 1)
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Output Turn on Time ton 5µsVCC = 10V, IC= 50mA,
Output Turn off Time IF = 200mA ,
4N32, 4N33 toff 100 µsPulse Width = 1ms
4N29, 4N30, 4N31 40 µsfig.1
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
5/2/03
Input
Output 10%
90%
10%
90%
toff
tr
ton
tf
Output
VCC = 10V
IC = 50mA
IF = 200mA,
Pulse width = 1ms
Input
FIGURE 1
DB90048-AAS/A4
5/2/03
50
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
20
0
40
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter saturation voltage VCE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward current IF (mA)
IF = 8mA
IC = 2mA
80
100
0
0.5
1.0
1.5
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100
Ambient temperature TA ( °C )
IF = 10mA
VCE = 10V
0
10
Current Transfer Ratio vs.
Forward Current
Forward current IF (mA)
Current transfer ratio CTR (%)
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage VCE ( V )
Collector current IC (mA)
0 1 2 3 4 5
0
20
40
60
80
100
2mA
5mA
10mA
0.1 0.2 0.5 1 2 5 10 20 50 100
10000
1000
100
VCE = 10V
TA = 25°C
IF = 1mA
20
50mA TA = 25°C
50
5000
800
500
DB90048-AAS/A4
