Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
High profile hockey-puk
T ypical Applications
DC motor controls
Controlled DC power supplies
AC controllers
IT(AV) 650 A
@ Ths 55 °C
IT(RMS) 1230 A
@ Ths 25 °C
ITSM @ 50Hz 9000 A
@ 60Hz 9420 A
I2t@
50Hz 405 KA2s
@ 60Hz 370 KA2s
VDRM/VRRM 400 to 2000 V
tqtypical 100 µs
TJ- 40 to 125 °C
Parameters ST330C..L Units
Major Ratings and Characteristics case style TO-200AC (B-PUK)
650A
PHASE CONTROL THYRIST ORS Hockey Puk Version
ST330C..L SERIES
Bulletin I25154 rev. D 04/03
Document Number: 93734
www.vishay.com
1
ST330C..L Series
Bulletin I25154 rev. D 04/03
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
Parameter ST330C..L Units Conditions
Switching
1000 A/µs
tdTypical delay time 1.0
tqTypical turn-off time 100
µs
IT(AV) Max. average on-state current 650 (314) A 180° conduction, half sine wave
@ Heatsink temperature 55 (75) °C double side (single side) cooled
IT(RMS) Max. RMS on-state current 1230 DC @ 25°C heatsink temperature double side cooled
ITSM Max. peak, one-cycle 9000 t = 10ms No voltage
non-repetitive surge current 9420 A t = 8.3ms reapplied
7570 t = 10ms 100% VRRM
7920 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 405 t = 10ms No voltage Initial TJ = TJ max.
370 t = 8.3ms reapplied
287 t = 10ms 100% VRRM
262 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 4050 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1Low level value of threshold
voltage
VT(TO)2High level value of threshold
voltage
rt1 Low level value of on-state
slope resistance
rt2 High level value of on-state
slope resistance
VTM Max. on-state voltage 1.90 V Ipk= 1730A, TJ = TJ max, tp = 10ms sine pulse
IHMaximum holding current 600
ILTypical latching current 1000
0.91 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.57 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.57 (I > π x I T(AV)),TJ = TJ max.
Parameter ST330C..L Units Conditions
0.93 (I > π x IT(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA TJ = 25°C, anode supply 12V resistive load
Voltage VDRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max
VVmA
04 400 500
08 800 900
ST2330C..L 12 1200 1300 50
14 1400 1500
16 1600 1700
18 1800 1900
20 2000 2100
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Document Number: 93734
www.vishay.com
2
ST330C..L Series
Bulletin I25154 rev. D 04/03
TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, 0.11 DC operation single side cooled
junction to heatsink 0.06 DC operation double side cooled
RthC-hs Max. thermal resistance, 0.011 DC operation single side cooled
case to heatsink 0.005 DC operation double side cooled
F Mounting force, ± 10% 9800 N
(1000) (Kg)
wt Approximate weight 250 g
Parameter ST330C..L Units Conditions
K/W
Thermal and Mechanical Specification
°C
Case style TO - 200AC (B-PUK) See Outline Table
K/W
dv/dt Maximum critical rate of rise of
off-state voltage
IRRM Max. peak reverse and off-state
IDRM leakage current
Blocking
500 V/µs TJ = TJ max. linear to 80% rated VDRM
Parameter ST330C..L Units Conditions
50 mA TJ = TJ max, rated VDRM/VRRM applied
PGM Maximum peak gate power 10.0 TJ = TJ max, tp ≤ 5ms
PG(AV) Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50
IGM Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
TJ = - 40°C
mA TJ = 25°C
TJ = 125°C
TJ = - 40°C
VT
J = 25°C
TJ = 125°C
IGD DC gate current not to trigger 10 mA
Parameter ST330C..L Units Conditions
20
5.0
Triggering
TYP. MAX.
200 -
100 200
50 -
2.5 -
1.8 3.0
1.1 -
VGD DC gate voltage not to trigger 0.25 V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
TJ = TJ max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
VGT DC gate voltage required
to trigger
IGT DC gate current required
to trigger
W
VT
J = TJ max, tp ≤ 5ms
Document Number: 93734
www.vishay.com
3
ST330C..L Series
Bulletin I25154 rev. D 04/03
1- Thyristor
2- Essential part number
3-0 = Converter grade
4-C = Ceramic Puk
5- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6- L = Puk Case TO-200AC (B-PUK)
7- 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8- Critical dv/dt: None = 500V/µsec (Standard selection)
L = 1000V/µsec (Special selection)
Ordering Information Table
Device Code
5
1234
ST 33 0 C 16 L 1
7
68
Single Side Double Side Single Side Double Side
180° 0.012 0.010 0.008 0.008 TJ = TJ max.
120° 0.014 0.015 0.014 0.014
90° 0.018 0.018 0.019 0.019 K/W
60° 0.026 0.027 0.027 0.028
30° 0.045 0.046 0.046 0.046
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Document Number: 93734
www.vishay.com
4
ST330C..L Series
Bulletin I25154 rev. D 04/03
Outline Table
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800
DC
30° 60°90°120°180°
Average On -state Current (A )
Conducti on Peri od
M aximu m Al lo wable Heatsin k Tempe rature ( °C)
ST330C..L Series
(Single Si de Co oled)
R (DC) = 0 .1 1 K/W
thJ-hs
30
40
50
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350 400 450
30° 60° 90° 120° 180°
A v erage On-state Current (A )
Conduction Angle
Max i mum Al lowable Heatsink Temper ature (°C)
ST330C..L Series
(Single Side Cooled)
R (DC) = 0.1 1 K/W
thJ-hs
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
0.7 (0.03) MIN. 34 (1.34) DIA. MAX.
53 (2.09) DIA. MAX.
58.5 (2.3) DIA. MAX.
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
4.7 (0.18)
27 (1.06) M AX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20°± 5°
36.5 (1.44)
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
Document Number: 93734
www.vishay.com
5
ST330C..L Series
Bulletin I25154 rev. D 04/03
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
110100
Num ber Of Equal A mpl itude Hal f Cy cl e Cu rr en t Pu lses (N)
Peak Hal f Sine W ave On-state Current (A)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST330C..L Series
At Any Rated Load Condi tion And W i th
Rated V Applied Following Surge.
RRM
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
0.01 0.1 1
Pulse Train Duration (s)
Ver sus Pulse Tr ain D u ration. Control
Peak Half Sine Wave On-state Cur rent (A)
Initial T = 125°C
No Vo ltage Re ap plied
Rate d V Reapplied
RRM
J
ST330 C..L Series
M aximu m Non Repetitive Su rge C u rren t
Of Conducti on May N ot Be Mai ntained.
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0 200 400 600 800 1000 1200 1400
DC
180°
120°
90°
60°
30°
RMS Lim it
Con duction Per iod
Max imum Av erage On-state Power Loss (W )
A verage On -state C u rren t ( A)
ST330C..L Series
T = 125°C
J
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800
30° 60° 90° 120° 180°
Average On-state Cu rrent (A )
Conducti on Angle
M aximu m All o wabl e Heatsink Temperatur e ( °C)
ST330C..L Series
(Double Side Coo led)
R (DC) = 0.0 5 K/W
thJ-hs
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 6- On-state Power Loss Characteristics
Fig. 5- On-state Power Loss Characteristics
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400
DC
30° 60°90° 120° 180°
A v erage On -state Cu rrent (A)
Conducti on Per i od
M aximu m Allo wable Heatsin k Tem peratur e (° C )
ST330 C..L Series
(Dou ble Side Cooled)
R (DC) = 0.0 5 K/W
thJ-hs
0
200
400
600
800
1000
1200
1400
1600
0 100 200 300 400 500 600 700 800
180°
120°
90°
60°
30° RMS Lim it
Conduction Angle
Maxim u m Ave rage O n-state Powe r Lo ss (W)
A verage On -state C urr e nt (A)
ST330C..L Series
T = 125°C
J
Document Number: 93734
www.vishay.com
6
ST330C..L Series
Bulletin I25154 rev. D 04/03
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b) (a)
Tj=25 °C
Tj =125 °C
Tj = - 40 °C
(2) (3)
Insta nt a neous Gat e Current (A)
Instantane ou s G a te Volt age (V)
a) Reco m m e nded lo ad line f o r
b) Re com men de d load line for
<= 3 0 % r ated di/dt : 1 0V, 1 0 ohms
Fr equency Limited by PG(AV)
r ated di/dt : 2 0 V, 10ohms; tr<=1 µ s
tr< =1 µs
(1)
(1) PGM = 10 W , tp = 4ms
(2) PGM = 20 W , tp = 2ms
(3) PGM = 40 W , tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Rectangu lar gate pulse
Device: ST330C..L Series
(4)
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Squ are Wav e Pu lse D uration ( s)
thJ-hs
ST330C..L Series
St eady State Valu e
R = 0 .1 1 K/W
(Single Side Co oled)
R = 0 .0 5 K/W
( Double Side C o o led)
(D C Oper ati on)
thJ-hs
thJ-hs
Tr ansient Thermal Impedance Z (K/W )
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
100
1000
10000
01234567
ST330C..L Series
Tj = 25˚C
Tj = 125˚C
Document Number: 93734
www.vishay.com
7
ST330C..L Series
Bulletin I25154 rev. D 04/03
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
04 /03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
Document Number: 93734
www.vishay.com
8
Legal Disclaimer Notice
Vishay
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
