LTC5507
1
5507f
APPLICATIO S
U
DESCRIPTIO
U
FEATURES
TYPICAL APPLICATIO
U
Wireless Transceivers
Wireless and Cable Infrastructure
RF Power Alarm
Envelope Detector
Temperature Compensated Internal Schottky
Diode RF Detector
Wide Input Power Range: –34dBm to 14dBm
Ultra Wide Input Frequency Range: 100kHz to
1000MHz
Buffered Output
Wide V
CC
Range of 2.7V to 6V
Low Operating Current: 550µA
Low Shutdown Current: <2µA
Low Profile (1mm) ThinSOT
TM
Package
100kHz to 1GHz
RF Power Detector
The LTC
®
5507 is an RF power detector for applications
operating from 100kHz to 1000MHz. The input frequency
range is determined by an external capacitor. A tempera-
ture-compensated Schottky diode peak detector and buffer
amplifier are combined in a small 6-pin ThinSOT package.
The RF input voltage is peak detected using an on-chip
Schottky diode and external capacitor. The detected volt-
age is buffered and supplied to the V
OUT
pin. A power
saving shutdown mode reduces supply current to less
than 2µA.
, LTC and LT are registered trademarks of Linear Technology Corporation.
ThinSOT is a trademark of Linear Technology Corporation
5507 TA01
VOUT
GND
SHDN
VCC
PCAP
RFIN
LTC5507
4
5
6
3
2
1
VOUT
DETECTED
VOLTAGE
VBAT
2.7V TO 6V C2
C1
RF
INPUT DISABLE ENABLE
Figure 1. 100kHz to 1000MHz RF Power Detector
Typical Detector Characteristics
at 100kHz, 100MHz and 1000MHz
RF INPUT POWER (dBm)
V
OUT
OUTPUT VOLTAGE (mV)
10000
5507 TA01b
100
1000
–26 6 14–2–10–18
–34
100kHz, 100MHz
1000MHz
T
A
= 25°C
V
CC
= 2.7V TO 6V
LTC5507
2
5507f
V
CC
, V
OUT
to GND ....................................0.3V to 6.5V
RF
IN
Voltage to GND ......................... (V
CC
± 1.8V) to 7V
SHDN Voltage to GND ................ 0.3V to (V
CC
+ 0.3V)
PCAP Voltage to GND ........................(V
CC
– 1.8V) to 7V
I
VOUT
...................................................................... 5mA
Operating Temperature Range (Note 2) .. 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ 65°C to 150°C
Lead Temperature (Soldering, 10 sec)................. 300°C
ORDER PART
NUMBER
S6 PART
MARKING
T
JMAX
= 125°C, θ
JA
= 250°C/W LTZX
LTC5507ES6
ABSOLUTE AXI U RATI GS
W
WW
U
PACKAGE/ORDER I FOR ATIO
UUW
(Note 1)
ELECTRICAL CHARACTERISTICS
The denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, RF Input Signal is Off, unless otherwise noted.
PARAMETER CONDITIONS MIN TYP MAX UNITS
V
CC
Operating Voltage 2.7 6 V
I
VCC
Shutdown Current SHDN = 0V 2µA
I
VCC
Operating Current SHDN = V
CC
, I
VOUT
= 0mA 0.55 0.85 mA
V
OUT
V
OL
(No RF Input) R
LOAD
= 2k, SHDN = V
CC
, Enabled 130 250 370 mV
SHDN = 0V, Disabled 1 mV
V
OUT
Output Current V
OUT
= 1.75V, V
CC
= 2.7V to 6V, V
OUT
= 10mV 12 mA
V
OUT
Enable Time SHDN = V
CC
, C
LOAD
= 33pF, R
LOAD
= 2k 720 µs
V
OUT
Load Capacitance (Note 4) 33 pF
V
OUT
Noise V
CC
= 3V, Noise BW = 1.5MHz, 50 RF Input Termination 2 mV
P-P
SHDN Voltage, Chip Disabled V
CC
= 2.7V to 6V 0.35 V
SHDN Voltage, Chip Enabled V
CC
= 2.7V to 6V 1.4 V
SHDN Input Current SHDN = 3.6V 24 40 µA
RF
IN
Input Frequency Range 0.1– 1000 MHz
Max RF
IN
Input Power (Note 3) 14 dBm
RF
IN
AC Input Resistance F = 10MHz, RF Input = –10dBm 130
F = 1000MHz, RF Input = –10dBm 95
RF
IN
Input Shunt Capacitance 1.7 pF
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
Note 3: RF performance is tested at: 80MHz, –4dBm
Note 4: Guaranteed by design.
6 RFIN
5 PCAP
4 VCC
SHDN 1
TOP VIEW
S6 PACKAGE
6-LEAD PLASTIC SOT-23
GND 2
VOUT 3
LTC5507
3
5507f
TYPICAL PERFOR A CE CHARACTERISTICS
UW
LTC5507 Typical Detector
Characteristics, 100kHz,
VCC = 2.7V TO 6V
Positive VOUT Slew Rate vs C2
Capacitance
LTC5507 Typical Detector
Characteristics, 1000MHz
VCC = 2.7V TO 6V
LTC5507 Typical Detector
Characteristics, 100MHz
VCC = 2.7V TO 6V
RF INPUT POWER (dBm)
–34 –28 –22 –16
V
OUT
OUTPUT VOLTAGE (mV)
100
1000
10000
–10 4 2 8 14
5507 G01
T
A
= –40°CT
A
= 85°C
C1 = 0.47µF
C2 = 0.47µF
T
A
= 25°C
TA = –40°C
TA = 85°C
C1 = 1000pF
C2 = 1000pF
TA = 25°C
RF INPUT POWER (dBm)
–34 –28 –22 –16
VOUT OUTPUT VOLTAGE (mV)
100
1000
10000
–10 4 2 8 14
5507 G02
T
A
= –40°CT
A
= 85°C
C1 = 33pF
C2 = 33pF
T
A
= 25°C
RF INPUT POWER (dBm)
–34 –28 –22 –16
V
OUT
OUTPUT VOLTAGE (mV)
100
1000
10000
–10 4 2 8 14
5507 G03
C2 CAPACITANCE (pF)
33
POSITIVE V
OUT
SLEW RATE (V/µs)
10.0
1.0
0.10
0.01 330 3300 33000033000
5507 G04
C2 CAPACITANCE (pF)
33 330 3300 33000033000
5507 G05
NEGATIVE VOUT SLEW RATE (V/µs)
10.000
1.000
0.100
0.010
0.001
0
C2 CAPACITANCE (pF)
33 330 3300 33000033000
5507 G06
VOUT BW (kHz)
10000
1000
100
10
1
VOUT BW vs C2 Capacitance
Negative VOUT Slew Rate vs C2
Capacitance
LTC5507
4
5507f
BLOCK DIAGRA
W
+
+
5507 BD
GAIN
COMPRESSION
SHDN
V
OUT
SHDN
GND
C1
C2
2
1
3
4
BUFFER
250
RF DET
30k
30k
60µA60µA150k BIAS
100
RF
SOURCE
RF
IN
V
CC
6
5
V
CC
PCAP
C1 = C2
C2 (µF) , f = LOWEST RF INPUT FREQUENCY (MHz)
1
30f
UU
U
PI FU CTIO S
SHDN (Pin 1): Shutdown Input. A logic low or no-connect
on the SHDN pin places the part in shutdown mode. A logic
high enables the part. SHDN has an internal 150k pull
down resistor to ensure that the part is in shutdown when
the enable driver is in a tri-state condition.
GND (Pin 2): System Ground.
V
OUT
(Pin 3): Buffered and Level Shifted Detector Output
Voltage.
V
CC
(Pin 4): Power Supply Voltage, 2.7V to 6V. V
CC
should
be bypassed with 0.1µF and 100pF ceramic capacitors.
PCAP (Pin 5): Peak Detector Hold Capacitor. Capacitor
value is dependent on RF frequency. Capacitor must be
connected between PCAP and V
CC
.
RF
IN
(Pin 6): RF Input Voltage. Referenced to V
CC
. A
coupling capacitor must be used to connect to the RF
signal source. This pin has an internal 250 termination
and an internal Schottky diode detector.
Figure 2.
LTC5507
5
5507f
APPLICATIO S I FOR ATIO
WUUU
Operation
The LTC5507 integrates several functions to provide RF
power detection over frequencies up to 1000MHz. These
functions include an internally compensated buffer ampli-
fier, an RF Schottky diode peak detector and level shift
amplifier to convert the RF signal to DC, a delay circuit to
avoid voltage transients at V
OUT
when coming out of shut-
down, and a gain compression circuit to extend the
detector dynamic range.
Buffer Amplifier
The buffer amplifier has a gain of two and is capable of
driving a 2mA load. The buffer amplifier typically has an
output voltage range of 0.25V to V
CC
– 0.1V.
RF Detector
The internal RF Schottky diode peak detector and level
shift amplifier converts the RF input signal to a low
frequency signal. The frequency range of the RF pin is
typically up to 1000MHz. The detector demonstrates ex-
cellent operation over a wide range of input power. The
Schottky detector is biased at about 70µA. The hold
capacitor is external.
Gain Compression
The gain compression circuit changes the feedback ratio
as the RF peak-detected input voltage increases above
60mV. Below 60mV, the DC voltage gain from the peak
detector to the buffer output is 4. Above 140mV, the DC
voltage gain is reduced to 0.75. The compression expands
the low power detector range due to higher gain.
Modes of Operation
MODE SHDN OPERATION
Shutdown Low Disabled
Enable High Power Detect
Applications
The LTC5507 can be used as a self-standing signal strength
measuring receiver for a wide range of input signals from
–34dBm to 14dBm for frequencies up to 1000MHz.
The LTC5507 can be used as a demodulator for AM and
ASK modulated signals with data rates up to 1.5MHz.
Depending on specific application needs, the RSSI output
can be split into two branches, providing AC-coupled data
(or audio) output and DC-coupled, RSSI output for signal
strength measurements and AGC.
C1, C2 Capacitor Selection (Refer to Figure 3)
C1 couples the RF input signal to the detector input RF
IN
which is referenced to V
CC
. C2 is the peak detector
capacitor connected between PCAP and V
CC
. The value of
C2 will affect the slew rate and bandwidth. Typically C1 can
equal C2. Ceramic capacitors are recommended for C1
and C2. The values for C1 and C2 are dependent on the
operating RF frequency. The capacitive reactance should
be less than 5 to minimize ripple on C2.
C2(µF) 1/(30 • f) where f is the lowest RF input
frequency (MHz)
C1 = C2
In general, select C1 and C2 large enough to pass the
lowest expected RF signal frequency, as described by the
above formulas. But optimize C1 and C2, subject to this
constraint, to improve output slew rate and bandwidth,
and to enable good AC performance for the highest
expected RF signal frequency.
LTC5507
6
5507f
APPLICATIO S I FOR ATIO
WUUU
5507 F03
LTC5507
1
2
3
6
5
4
SHDN
GND
VOUT
RFIN
PCAP
VCC
SHDN
VOUT
VCC
VCC
VCC
GND
SHDN
E4
JP1
E2 E1
E3
R2*
68
R3*
22k
C5*
C2
R4* J1
C1
C4*
0.1µFC3*
100pF
RFIN
* OPTIONAL COMPONENTS
R2 AND C5 FORM AN OPTIONAL OUTPUT LOWPASS FILTER.
R3 IS USED FOR DEMO PURPOSES ONLY, AND IS NOT USED IN ACTUAL PRODUCT IMPLEMENTATION.
R4 CAN BE USED FOR INPUT POWER LIMITING OR BROADBAND IMPEDANCE MATCHING.
C3 AND C4 ARE OPTIONAL POWER SUPPLY FILTERS.
Figure 3. Evaluation Demo Board Schematic
LTC5507
7
5507f
PACKAGE DESCRIPTIO
U
1.50 – 1.75
(NOTE 4)
2.80 BSC
0.30 – 0.45
6 PLCS (NOTE 3)
DATUM ‘A’
0.09 – 0.20
(NOTE 3)
S6 TSOT-23 0302
2.90 BSC
(NOTE 4)
0.95 BSC
1.90 BSC
0.80 – 0.90
1.00 MAX 0.01 – 0.10
0.20 BSC
0.30 – 0.50 REF
PIN ONE ID
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
3.85 MAX
0.62
MAX 0.95
REF
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
1.4 MIN
2.62 REF
1.22 REF
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
LTC5507
8
5507f
LT/TP 0103 2K • PRINTED IN USA
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900
FAX: (408) 434-0507
www.linear.com
LINEAR TE CHNOLOGY CORP ORATION 2001
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