©2004 Fairchild Semiconductor Corporation Rev. A, May 2004
BSP50
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Thermal Charac t eris ti cs
T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CER
Collector-Emitter Voltage 45 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current - Continuous 800 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range - 55 ~ +150 °C
Symbol Parameter Test Conditions M in. Typ. M ax . Units
Off Characteristics
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 100µA, I
E
= 0 60 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10µA, I
C
= 0 5 V
I
CES
Collector Cutoff Current V
CE
= 45V, V
BE
= 0 50 nA
I
EBO
Emitter Cutof f Current V
EB
= 4.0V, I
C
= 0 50 nA
On Characteristics
h
FE
DC Current Gain I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V 1000
2000
V
CE
(sat) Collector-Emitter Saturation V oltage I
C
= 500mA, I
B
= 0.5mA 1.3 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 500mA, I
B
= 0.5mA 1.9 V
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C1000
8.0 mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 125 °C/W
BSP50
NPN Darlington Transistor
• This device is designed for applications requiring extremly high current
gain at collector currents to 500mA.
• Sourced from process 03.
SOT-223
12
4
3
1. Base 2. Collector 3. Emitter
3.00 ±0.10
7.00 ±0.30
0.65 ±0.20
0.08MAX
3.50 ±0.20
1.60 ±0.20
(0.46)
(0.89)
(0.60) (0.60)
1.75 ±0.20
0.70 ±0.10
4.60 ±0.25
6.50 ±0.20
(0.95) (0.95)
2.30 TYP
0.25
MAX1.80
0°~10°
+0.10
–0.05
0.06 +0.04
–0.02
Package Dimensions
BSP50
SOT-223
Dimensions in Millimeters
Rev. A, May 2004©2004 Fairchild Semiconductor Corporation
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
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Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
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