V
RRM
= 50 V - 300 V
I
F
= 15 A
Features
• High Surge Capability DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol 1N3208 (R) 1N3209 (R) Unit
Re
etitive
eak reverse volta
eV
RRM
50 100 V
• Types from 50 V to 300 V V
RRM
2. Reverse polarity (R): Stud is anode.
1N3208 thru 1N3211R
1N3211 (R)
200
1N3210 (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Silicon Standard
Recover
Diode
Conditions
300
RMS reverse voltage V
RMS
35
70
V
DC blocking voltage V
DC
50 100 V
Continuous forward current I
F
15 15 A
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol 1N3208 (R) 1N3209 (R) Unit
Diode forward voltage 1.5 1.5
10 10 μA
10 10 mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
0.65 0.65 °C/W
10
A297
Reverse current I
R
V
F
297
1N3211 (R)
10 10
V
R
= 50 V, T
j
= 25 °C
I
F
= 15 A, T
j
= 25 °C
T
C
≤ 150 °C
Conditions
140
297 297
-55 to 150
15 15
-55 to 150
0.65
1.5 1.5
10
I
F,SM
1N3210 (R)
0.65
V
R
= 50 V, T
j
= 150 °C
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-55 to 150 -55 to 150
T
C
= 25 °C, t
p
= 8.3 ms
210
300200
Surge non-repetitive forward
current, Half Sine Wave
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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