Three Phase Rectifier Bridges PSD 36 IdAVM = 35 A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 36/08 PSD 36/12 PSD 36/14 PSD 36/16 PSD 36/18 Symbol Test Conditions IdAVM IFSM T C = 62C, module i2 dt T VJ T VJM T stg VISOL Maximum Ratings 35 A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 550 600 A A T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 500 550 A A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1520 1520 A2 s A2 s T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1250 1250 A2 s A2 s -40 ... + 150 150 -40 ... + 150 C C C 2500 3000 V V 2 10% 18 10% 22 Nm lb. in g 50/60 HZ, RMS IISOL 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32 UNF) W eight typ. Symbol Test Conditions IR VR = VRRM VR = VRRM T VJ = 25C T VJ = T VJM 0.3 2.0 mA mA VF VTO rT RthJC IF = 150 A T VJ = 25C 1.7 V 0.8 7.4 V m per Diode; DC current per module 7.5 1.25 K/W K/W RthJK per Diode; DC current per module 8.4 1.4 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 12.7 9.4 50 mm mm m/s2 For power-loss calculations only T VJ = T VJM POWERSEM GmbH, Walperdorfer Str. 53 91126 D- Schwabach, Germany Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 Features * Package with 1/4" fast-on terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with one screw * Space and weight savings * Improved temperature and power cycling Package, style and outline Dimensions in mm (1mm = 0.0394") Characteristic Value POWERSEM reserves the right to change limits, test conditions and dimensions www.powersem.net PSD 36 200 1:T [A] VJ 2:T IF(OV) -----IFSM = 150C VJ IFSM (A) TVJ=45C TVJ=150C 480 500 = 25C 1.6 150 4 10 2 As 1.4 1.2 100 10 3 TVJ=45C TVJ=150C 1 0 VRRM 50 0.8 1/2 VRRM IF 1 0.6 2 1 VRRM 0 0.5 1 1.5 VF[V] 2 2.5 Fig. 1 Forward current versus voltage drop per diode 80 [W] 70 10 0.4 100 101 t[ms] 102 103 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 2 1 2 4 t [ms] 6 10 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 60 PSD 36N TC 0.41 0.1 0.72 65 = RTHCA [K/W] 70 75 80 60 50 DC sin.180 rec.120 rec.60 rec.30 [A] 40 85 50 90 1.35 95 30 100 40 105 110 2.6 30 120 125 DC sin.180 rec.120 rec.60 rec.30 20 10 PVTOT 0 10 IFAVM 30 [A] 115 130 6.35 135 140 145 0 Tamb 50 100 [K] C 150 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 8 K/W Z thJK Z thJC 6 4 2 Zth 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or Thyristor), calculated 20 10 IdAV 0 50 100 TC(C) 150 200 Fig.5 Maximum forward current at case temperature